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Amplitude analysis of the decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)

Chinese Physics C 2024年第8期48卷 6-33页

作者： M.Ablikim M.N.Achasov P.Adlarson O.Afedulidis x.C.Ai R.Aliberti A.Amoroso Q.An Y.Bai O.Bakina I.Balossino Y.Ban H.-R.Bao V.Batozskaya K.Begzsuren N.Berger M.Berlowski M.Bertani D.Bettoni F.Bianchi E.Bianco A.Bortone I.Boyko R.A.Briere A.Brueggemann H.Cai x.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin j.F.Chang W.L.Chang G.R.Che G.Chelkov C.Chen C.H.Chen Chao Chen G.Chen H.S.Chen M.L.Chen S.j.Chen S.L.Chen S.M.Chen T.Chen x.R.Chen x.T.Chen Y.B.Chen Y.Q.Chen Z.j.Chen Z.Y.Chen S.K.Choi x.Chu G.Cibinetto F.Cossio j.j.Cui H.L.Dai j.P.Dai A.Dbeyssi R.E.de Boer D.Dedovich C.Q.Deng Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori B.Fang S.S.Fang W.x.Fang Y.Fang Y.Q.Fang R.Farinelli L.Fava F.Feldbauer G.Felici C.Q.Feng j.H.Feng Y.T.Feng K.Fischer M.Fritsch C.D.Fu j.L.Fu Y.W.Fu H.Gao Y.N.Gao Yang Gao S.Garbolino I.Garzia P.T.Ge Z.W.Ge C.Geng E.M.Gersabeck B.Ding x.x.Ding Y.Ding Y.Ding j.Dong L.Y.Dong M.Y.Dong x.Dong M.C.Du S.x.Du Z.H.Duan P.Egorov Y.H.Fan j.Fang jA.Gilman K.Goetzen L.Gong W.x.Gong W.Gradl S.Gramigna M.Greco M.H.Gu Y.T.Gu C.Y.Guan Z.L.Guan A.Q.Guo L.B.Guo M.j.Guo R.P.Guo Y.P.Guo A.Guskov j.Gutierrez K.L.Han T.T.Han x.Q.Hao F.A.Harris K.K.He K.L.He F.H.Heinsius C.H.Heinz Y.K.Heng C.Herold T.Holtmann P.C.Hong G.Y.Hou x.T.Hou Y.R.Hou Z.L.Hou B.Y.Hu H.M.Hu j.F.Hu T.Hu Y.Hu G.S.Huang K.x.Huang L.Q.Huang x.T.Huang Y.P.Huang T.Hussain F.H\"olzken N.H\"usken N.in der Wiesche M.Irshad j.jackson S.janchiv j.H.jeong Q.ji Q.P.ji W.ji x.B.ji x.L.ji Y.Y.ji x.Q.jia Z.K.jia D.jiang H.B.jiang P.C.jiang S.S.jiang T.j.jiang x.S.jiang Y.jiang j.B.jiao j.K.jiao Z.jiao S.jin Y.jin M.Q.jing x.M.jing T.johansson S.Kabana N.Kalantar-Nayestanaki x.L.Kang x.S.Kang M.Kavatsyuk B.C.Ke V.Khachatryan A.Khoukaz R.Kiuchi O.B.Kolcu B.Kopf M.Kuessner x.Kui A.Kupsc W.K\"uhn j.j.Lane P.Larin L.Lavezzi T.T.Lei Z.H.Lei H.Leithoff M.Lellmann T.Lenz C.Li C.Li C.H.Li Cheng Li D.M.Li F.Li G.Li H.Li H.B.Li H.j.Li H.N.Li Hui Li j.R.Li j.S.Li K.Li L.j.Li L.K.Li Lei Li M.H.Li P.R.Li Q.M.Li Q.x.Li R.Li S.x.Li T.Li W.D.Li W.G.Li x.Li x.H.Li x.L.Li x.Y.Li Y Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Beihang University Beijing 100191China Bochum Ruhr-University D-44780 BochumGermany Budker Institute of Nuclear Physics SB RAS(BINP) Novosibirsk 630090Russia Carnegie Mellon University PittsburghPennsylvania 15213USA Central China Normal University Wuhan 430079China Central South University Changsha 410083China China Center of Advanced Science and Technology Beijing 100190China China University of Geosciences Wuhan 430074China Chung-Ang University Seoul06974Republic of Korea COMSATS University Islamabad Lahore CampusDefence RoadOff Raiwind Road54000 LahorePakistan Fudan University Shanghai 200433China GSI Helmholtzcentre for Heavy Ion Research GmbH D-64291 DarmstadtGermany Guangxi Normal University Guilin 541004China Guangxi University Nanning 530004China Hangzhou Normal University Hangzhou 310036China Hebei University Baoding 071002China Helmholtz Institute Mainz Staudinger Weg 18D-55099 MainzGermany Henan Normal University Xinxiang 453007China Henan University Kaifeng 475004China Henan University of Science and Technology Luoyang 471003China Henan University of Technology Zhengzhou 450001China Huangshan College Huangshan 245000China Hunan Normal University Changsha 410081China Hunan University Changsha 410082China Indian Institute of Technology Madras Chennai 600036India Indiana University BloomingtonIndiana 47405USA INFN Laboratori Nazionali di Frascati INFN Laboratori Nazionali di FrascatiI-00044FrascatiItaly INFN Laboratori Nazionali di Frascati INFN Sezione di PerugiaI-06100PerugiaItaly INFN Laboratori Nazionali di Frascati University of PerugiaI-06100PerugiaItaly INFN Sezione di Ferrara INFN Sezione di FerraraI-44122FerraraItaly INFN Sezione di Ferrara University of FerraraI-44122FerraraItaly Inner Mongolia University Hohhot 010021China Institute of Modern Physics Lanzhou 730000China Institute of Physics and Technology Peace Avenue 54BUlaanbaatar 13330Mongolia Instituto de A

Using e^(+)e^(−)annihilation data corresponding to an integrated luminosity of 2.93 fb^(−1)taken at the center-of-mass energy√s=3.773 GeV with the BESIII detector,a joint amplitude analysis is performed on the decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η).The fit fractions of individual components are obtained,and large interferences among the dominant components of the decays D^(0)→a_(1)(1260)π,D^(0)→π(1300)π,D^(0)→ρ(770)ρ(770),and D^(0)→2(ππ)_(S)are observed in both *** the obtained amplitude model,the CP-even fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are determined to be(75.2±1.1_(stat).±1.5_(syst.))%and(68.9±1.5_(stat).±2.4_(syst.))%,*** branching fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are measured to be(0.688±0.010_(stat.)±0.010_(syst.))%and(0.951±0.025_(stat.)±0.021_(syst.))%,*** amplitude analysis provides an important model for the binning strategy in measuring the strong phase parameters of D^(0)→4πwhen used to determine the CKM angleγ(ϕ_(3))via the B^(−)→DK^(−)decay.

关键词： BESIII D^(0)meson decays amplitude analysis CP-even fraction

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Determination of the number ofψ(3686)events taken at BESⅢ

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Chinese Physics C 2024年第9期48卷 8-20页

作者： M.Ablikim M.N.Achasov P.Adlarson O.Afedulidis x.C.Ai R.Aliberti A.Amoroso Q.An Y.Bai O.Bakina I.Balossino Y.Ban H.-R.Bao V.Batozskaya K.Begzsuren N.Berger M.Berlowski M.Bertani D.Bettoni F.Bianchi E.Bianco A.Bortone I.Boyko R.A.Briere A.Brueggemann H.Cai x.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin j.F.Chang G.R.Che G.Chelkov C.Chen C.H.Chen Chao Chen G.Chen H.S.Chen H.Y.Chen M.L.Chen S.j.Chen S.L.Chen S.M.Chen T.Chen x.R.Chen x.T.Chen Y.B.Chen Y.Q.Chen Z.j.Chen Z.Y.Chen S.K.Choi G.Cibinetto F.Cossio j.j.Cui H.L.Dai j.P.Dai A.Dbeyssi R.E.de Boer D.Dedovich C.Q.Deng Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori B.Ding x.x.Ding Y.Ding Y.Ding j.Dong L.Y.Dong M.Y.Dong x.Dong M.C.Du S.x.Du Y.Y.Duan Z.H.Duan P.Egorov Y.H.Fan j.Fang j.Fang S.S.Fang W.x.Fang Y.Fang Y.Q.Fang R.Farinelli L.Fava F.Feldbauer G.Felici C.Q.Feng j.H.Feng Y.T.Feng M.Fritsch C.D.Fu j.L.Fu Y.W.Fu H.Gao x.B.Gao Y.N.Gao Yang Gao S.Garbolino I.Garzia L.Ge P.T.Ge Z.W.Ge C.Geng E.M.Gersabeck A.Gilman K.Goetzen L.Gong W.x.Gong W.Gradl S.Gramigna M.Greco M.H.Gu Y.T.Gu C.Y.Guan Z.L.Guan A.Q.Guo L.B.Guo M.j.Guo R.P.Guo Y.P.Guo A.Guskov j.Gutierrez K.L.Han T.T.Han F.Hanisch x.Q.Hao F.A.Harris K.K.He K.L.He F.H.Heinsius C.H.Heinz Y.K.Heng C.Herold T.Holtmann P.C.Hong G.Y.Hou x.T.Hou Y.R.Hou Z.L.Hou B.Y.Hu H.M.Hu j.F.Hu S.L.Hu T.Hu Y.Hu G.S.Huang K.x.Huang L.Q.Huang x.T.Huang Y.P.Huang T.Hussain F.Hölzken N.Hüsken N.in der Wiesche j.jackson S.janchiv j.H.jeong Q.ji Q.P.ji W.ji x.B.ji x.L.ji Y.Y.ji x.Q.jia Z.K.jia D.jiang H.B.jiang P.C.jiang S.S.jiang T.j.jiang x.S.jiang Y.jiang j.B.jiao j.K.jiao Z.jiao S.jin Y.jin M.Q.jing x.M.jing T.johansson S.Kabana N.Kalantar-Nayestanaki x.L.Kang x.S.Kang M.Kavatsyuk B.C.Ke V.Khachatryan A.Khoukaz R.Kiuchi O.B.Kolcu B.Kopf M.Kuessner x.Kui N.Kumar A.Kupsc W.Kühn j.j.Lane P.Larin L.Lavezzi T.T.Lei Z.H.Lei M.Lellmann T.Lenz C.Li C.Li C.H.Li Cheng Li D.M.Li F.Li G.Li H.B.Li H.j.Li H.N.Li Hui Li j.R.Li j.S.Li Ke Li L.j.Li L.K.Li Lei Li M.H.Li P.R.Li Q.M.Li Q.x.Li R.Li S.x.Li T.Li W.D.Li W.G.Li x.Li x.H.Li x.L.Li x.Z.Li xi Institute of High Energy Physics Beijing 100049China Beihang University Beijing 100191China Bochum Ruhr-University D-44780BochumGermany Budker Institute of Nuclear Physics SB RAS(BINP) Novosibirsk 630090Russia Carnegie Mellon University PittsburghPennsylvania 15213USA Central China Normal University Wuhan 430079China Central South University Changsha 410083China China Center of Advanced Science and Technology Beijing 100190China China University of Geosciences Wuhan 430074China Chung-Ang University Seoul06974Republic of Korea COMSATS University Islamabad Lahore CampusDefence RoadOff Raiwind Road54000LahorePakistan Fudan University Shanghai 200433China GSI Helmholtzcentre for Heavy Ion Research GmbH D-64291DarmstadtGermany Guangxi Normal University Guilin 541004China Guangxi University Nanning 530004China Hangzhou Normal University Hangzhou 310036China Hebei University Baoding 071002China Helmholtz Institute Mainz Staudinger Weg 18D-55099MainzGermany Henan Normal University Xinxiang 453007China Henan University Kaifeng 475004China Henan University of Science and Technology Luoyang 471003China Henan University of Technology Zhengzhou 450001China Huangshan College Huangshan 245000China Hunan Normal University Changsha 410081China Hunan University Changsha 410082China Indian Institute of Technology Madras Chennai 600036India Indiana University BloomingtonIndiana 47405USA INFN Laboratori Nazionali di Frascati (A)INFN Laboratori Nazionali di FrascatiI-00044FrascatiItaly(B)INFN Sezione di PerugiaI-06100PerugiaItaly(C)University of PerugiaI-06100PerugiaItaly INFN Sezione di Ferrara (A)INFN Sezione di FerraraI-44122FerraraItaly(B)University of FerraraI-44122FerraraItaly Inner Mongolia University Hohhot 010021China Institute of Modern Physics Lanzhou 730000China Institute of Physics and Technology Peace Avenue 54BUlaanbaatar 13330Mongolia Instituto de Alta Investigación Universidad de TarapacáCasilla 7DArica 1000000Chile jilin University Changchun 130012China joha

The number ofψ(3686)events collected by the BESⅢdetector during the 2021 run period is determined to be(2259.3±11.1)×10~6 by counting inclusiveψ(3686)hadronic *** uncertainty is systematic and the statistical uncertainty is ***,the numbers ofψ(3686)events collected during the 2009 and 2012run periods are updated to be(107.7±0.6)×10~6 and(345.4±2.6)×10~6,*** numbers are consistent with the previous measurements within one standard *** total number ofψ(3686)events in the three data samples is(2712.4±14.3)×10~6.

关键词： ψ(3686) inclusive process Hadronic events BESⅢdetector

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Zinc Oxide Nanostructured Biosensor for Glucose Detection

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journal of Materials Science & Technology 2008年第4期24卷 649-656页

作者： x. W.Sun j.x. wang A. Wei School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Singapore

Zinc oxide （ZnO） nanocombs were fabricated by vapor phase transport, and nanorods and hierarchical nanodisk structures by aqueous thermal decomposition. Glucose biosensors were constructed using these ZnO nanostructures as supporting materials for glucose oxidase （GOx） loading. These ZnO glucose biosensors showed a high sensitivity for glucose detection and high affinity of GOx to glucose as well as the low detection limit. The results demonstrate that ZnO nanostructures have potential applications in biosensors.

关键词： ZnO nanostructures Crystal structure Glucose Biosensor

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Processing, Microstructure and Mechanical Properties of Ti6Al4V Particles-Reinforced Mg Matrix Composites

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Acta Metallurgica Sinica(English Letters) 2016年第10期29卷 940-950页

作者： x.M.wang x.j.wang x.S.Hu K.Wu M.Y.Zheng School of Materials Science and Engineering Harbin Institute of Technology

Novel Ti6Al4V particles-reinforced AZ91 Mg matrix composites were successfully fabricated by stir casting method. The stirring time in semisolid condition directly affected the particle distribution and the quality of the ingots. Furthermore, the optimal speed of the heating and the liquid stirring could overcome particle settlement caused by the density difference between the matrix and the particles. Ti6Al4V particles distributed uniformly in the composites with different particle contents. The average grain size decreased with the increase in the particle contents. The Ti6A14V particles bonded pretty well with the alloy matrix. In addition, there were some interfacial reactions in the composites. There were rod-like A13Ti phases at the interface. The precipitates extended from the particle surface to the matrix, and they might improve the interfacial bonding strength. The ultimate tensile strength, yield strength and elastic modulus were enhanced as the particle contents increased, and the elongation was much better than that of the same matrix material reinforced with SiC particles. Thus, the novel composites exhibit better comprehensive mechanical properties.

关键词： Magnesium matrix composites Ti6Al4V particles Stir casting Microstructure Mechanicalproperties

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Magnesium matrix composite reinforced by nanoparticles-A review

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journal of Magnesium and Alloys 2021年第1期9卷 57-77页

作者： K.B.Nie x.j.wang K.K.Deng x.S.Hu K.Wu State Key Laboratory of Advanced Welding and joining Harbin Institute of TechnologyHarbin 150001China College of Materials Science and Engineering Taiyuan University of TechnologyTaiyuan 030024China

Significant progress has been made in magnesium-based composites during recent decades,especially for the appearance of magnesium matrix composite reinforced by *** nanoparticles added not only exhibit a good strengthening effect,but also maintain the initial toughness of the matrix,effectively balancing the contradiction between the strength and plasticity in the traditional magnesium matrix *** magnesium matrix nanocomposites with excellent mechanical properties have pushed the development of magnesium matrix composites to a new ***,it is very difficult to disperse the nanoparticles in metal melt especially in magnesium melt which is different from other metal melts and dangerous during the cast *** means that the preparation of magnesium matrix nanocomposite is extremely ***,the magnesium matrix nanocomposites possess a distinctive characteristic in deformation behavior,strengthening and toughening mechanism due to their special size effect of ***,this review will focus on the new preparation technologies,deformation behavior,mechanical properties and strengthening and toughening *** potential applications,development trends and future research ideas of magnesium matrix nanocomposite are also prospected.©2020 Published by Elsevier *** behalf of Chongqing University.

关键词： Magnesium matrix nanocomposite Microstructure Mechanical properties Strengthening mechanism

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Effects of Current Stressing on Shear Properties of Sn-3.8Ag-0.7Cu Solder joints

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journal of Materials Science & Technology 2010年第8期26卷 737-742页

作者： x.j. wang Q.L. Zeng Q.S. Zhu Z.G. wang j.K. Shang Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China Department of Materials Science and Engineering University of Illinois at Urbana-Champaign Urbana IL 61801 USA

Effects of electromigration on microstructure, shear strength, and fracture behavior of solder joints were investigated by single-ball shear samples of eutectic Sn-3.8Ag-0.7Cu （SAC） joined by Cu plates at two sides. The electromigration tests were conducted at a current density of about 1.1×10^3 A/cm2 and a working temperature of about 83℃. The results showed that the shear strength and flow stress decreased greatly after current stressing. Such a decrease was associated with no significant loss of the fracture strain at short electromigration but a great reduction in the fracture strain after long-term current stressing. The variation of the fracture strain with the electromigration time was shown to result from the shift of the fracture surface from the center of the solder towards the intermetallic compound （IMC） interface at the cathode.

关键词： Strength Fracture strain Voids Solder

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Effect of environments and normal loads on tribological properties of nitrided Ni(45)(FeCoCr)(40)(AlTi)(15)high-entropy alloys

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journal of Materials Science & Technology 2020年第7期42卷 85-96页

作者： L.W.Lan x.j.wang R.P.Guo H.j.Yang j.W.Qiao Research Center for High-Entropy Alloys College of Materials Science and EngineeringTaiyuan University of TechnologyTaiyuan030024China

The tribological properties of nitrided Ni(45)(FeCoCr)(40)(AlTi)(15)high-entropy alloys(HEAs)were investigated in air and simulated acid rain under different normal loads(5,7,10,and 12 N)at ambient *** results revealed that as-cast HEAs were only composed of FCC phase,while the volume fraction of FCC phase in the nitrided alloys was significantly ***,the hard phases of AIN,CrN,Fe4 N,and TiN phases were formed in the nitrided *** thickness of the nitriding layer was about 8.4μ*** hardness increased from 8.7 GPa in as-cast alloys to 14.5 GPa in the nitrided *** addition,under the same conditions,the friction coefficient of the nitrided alloys was higher than that of as-cast alloys,but the wear rate was generally lower than that of as-cast ***,the wear rate of the nitrided alloys was the lowest in acid rain due to the lubrication,cleaning,and cooling in the liquid *** air,dominating wear mechanisms in as-cast and nitrided alloys were abrasive,delamination,and adhesive ***,the wear mechanism of as-cast and nitrided alloys in acid rain was mainly abrasive and corrosion wears.

关键词： Abrasive wear Hardness Corrosive wear Microstructure Wear mechanism

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SUBSTRATE MATERIALS FOR POLY-CSiTF SOLAR CELLS: OPTIMIZATION OF SILICON SHEET FROM POWDER

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Acta Metallurgica Sinica(English Letters) 2005年第3期18卷 184-188页

作者： Q.Ban H.Shen x.j.wang x.W.Zou Z.C.Liang StateKeyLaboratoryofOptoelectronicMaterialsandTechnologies DepartmentofPhysicsandEngineeringZhongshan（SunYat-sen）UniversityGuangzhou510275China GuangzhouInstituteofEnergyConversion TheChineseAcademyofSciencesGuangzhou510275China

The optimization of silicon sheet from powder (SSP) technology as polycrystalli ne silicon thin film (poly-CSiTF) solar cells' substrate materials is studied by orthogonal design experimental method. Based on technological optimization of S SP prepared from electronic grade silicon powder, SSP solar cell devices with si mple structure are prepared and the effect of SSP substrate is discussed. Up to now, the conversion efficiency of the prepared solar cells on low purity SSP sub strate with fundamental structure has reached 8.25% (with area of 1cm×1cm).

关键词： poly-CSiTF SSP substrate material

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Bulk nanocrystalline W-Ti alloys with exceptional mechanical properties and thermal stability

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journal of Materials Science & Technology 2022年第19期114卷 16-28页

作者： H.x.xue x.C.Cai B.R.Sun x.Shen C.C.Du x.j.wang T.T.Yang S.W.xin T.D.Shen Clean Nano Energy Center State Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao 066004China CSSC 723rd Research Institute China State Shipbuilding Corporation LimitedYangzhou 225000China

Nanocrystalline(NC)W metals and alloys often exhibit higher radiation tolerance and strength than their coarse-grained ***,their thermal stability is low,making it difficult to achieve bulk NC W metals and alloys by consolidation using conventional techniques such as pressure-less sintering,hot-explosive-compaction sintering,and spark plasma *** we report the synthesis and mechanical properties of bulk NC W_(100-x)Ti_(x)(x=10 at.%-30 at.%)alloys prepared by consolidating mechanically alloyed NC powders under a high-temperature/high-pressure *** 20 at.%-30 at.%Ti largely improves the sinterability of NC W-Ti alloy *** room-temperature microhardness and compressive yield strength of consolidated bulk NC W_(80)Ti_(20) alloy are∼16.9 and 6.0 GPa,respectively,which are mainly caused by grain boundary strengthening and significantly higher than those of previously reported W and W *** ultimate compressive strength of bulk NC W_(80)Ti_(20) measured between 900 and 1100°C deceases with increasing *** behavior can be explained by the activation of Rachinger grain boundary *** grain growth is observed in bulk NC W_(80)Ti_(20) after compression at 1000°*** calculation suggests that it is the segregation of Ti at grain boundaries that decreases the specific grain boundary free energy and makes the NC W_(80)Ti_(20) alloy thermodynamically stable.

关键词： Nanocrystalline W-Ti alloys Segregation Grain boundary energy Strength Hardness

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Current diffusion and efficiency droop in vertical light emitting diodes

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Chinese Physics B 2019年第1期28卷 561-569页

作者： R Q Wan T Li Z Q Liu x Y Yi j x wang j H Li W H Zhu j M Li L C wang State Key Laboratory of High Performance Complex Manufacturing College of Mechanical and Electrical EngineeringCentral South University Semiconductor Lighting Technology Research and Development Center Institute of SemiconductorsChinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences

Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes(LEDs) needs to be further quantitatively clarified. By incorporating current crowding effect(CCE) into the conventional ABC model, we have theoretically and directly correlated the current diffusion and the internal quantum efficiency(IQE), light extraction efficiency(LEE), and external quantum efficiency(EQE) droop of the lateral ***, questions still exist for the vertical LEDs(V-LEDs). Here firstly the current diffusion length L_s(I) and L_s(II) have been clarified. Based on this, the influence of CCE on the EQE, IQE, and LEE of V-LEDs were investigated. Specifically to our V-LEDs with moderate series resistivity, L_s(III) was developed by combining L_s(I) and L_s(II), and the CCE effect on the performance of V-LEDs was investigated. The wall-plug efficiency(WPE) of V-LEDs ware investigated finally. Our works provide a deep understanding of the current diffusion status and the correlated efficiency droop in V-LEDs, thus would benefit the V-LEDs' chip design and further efficiency improvement.

关键词： efficiency droop vertical light emitting diodes current crowding effect current blocking layer

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