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Determination and Improvement of Deposition Parameters of TiO2 Thin Films via ALD

材料科学与工程（中英文B版） 2019年第1期9卷 32-40页

作者： Meryem Bozkaya ismail kupa Meryem Polat Gonullu Recep Zan Ali Kemal Okyay Hakan Ates Department of Advanced Technologies Graduate School of Natural and Applied SciencesUniversity of GaziAnkaraTurkey Department of Metallurgical and Materials Engineering Faculty of TechnologyUniversity of GaziAnkaraTurkey Department of Physics Faculty of Arts and SciencesUniversity of Nigde Omer HalisdemirNigdeTurkey Okyay Technology and R&D AnkaraTurkey Dept.of Electrical Engineering Stanford UniversityCA 94305USA

In recent years,with the development of technology,interest in microelectronics and thin film devices has increased *** improvements in microelectronics and thin film devices are dependent on the progress of novel materials and new deposition *** particular,the continuing drive to some devices such as silicon devices will soon require SiO2 gate and oxide layers with a thickness on the order of a few nanometers as 1 or 2 *** dioxide is a candidate material in microelectronic and thin film devices,a wide band gap semiconductor that exhibits various crystal ***,thin film techniques like ALD(atomic layer deposition)attract attention for the preparation of these candidate materials with higher film uniformity and *** study demonstrates how TiO2 thin films were growth by ALD technique on silicon substrates at 100℃,150℃and 200℃*** deposition conditions were examined to determine to increase film quality and efficient production of set ***(X-ray photoelectron spectroscopy)technique was used to obtain the surface composition of the TiO2 *** thicknesses and crystal structures of the films were investigated by ellipsometry and XRD(X-ray diffraction)*** properties of the films were measured by using four probe techniques,as *** results were evaluated in terms of repeatability of recipes and application potential.

关键词： TiO2 films ALD film grown optical properties

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