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A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films

Nano Research 2017年第6期10卷 1861-1871页

作者： Jongyeol Baek Demin Yin Na Liu inturu omkaram Chulseung Jung Healin Im Seongin Hong Seung Min Kim Young Ki Hong Jaehyun Hur Youngki Yoon Sunkook Kim Multi-Functional Nano/Bio Electronics Lab. Kyung Hee University Gyeonggi 446-701 Republic of Korea Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology (WIN) University of Waterloo Waterloo ON N2L 3GI Canada Institute of Advanced Composite Materials Korea Institute of Science and Technology (KIST) Jeonbuk 565-905 Republic of Korea Department of Chemical and Biological Engineering Gachon University Seongnam-si Gyeonggi 13120 Republic of Korea

Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities, large surface-to-volume ratios, and rapid electrical responses to their surrounding environments. Here, we report the first implementation of a highly sensitive chemical-vapor-deposition-grown multilayer MoSe2 field-effect transistor （FET） in a NO2 gas sensor. This sensor exhibited ultra-high sensitivity （S = ca. 1,907 for NO2 at 300 ppm）, real-time response, and rapid on-off switching. The high sensitivity of our MoSe2 gas sensor is attributed to changes in the gap states near the valence band induced by the NO2 gas absorbed in the MoSe2, which leads to a significant increase in hole current in the off-state regime. Device modeling and quantum transport simulations revealed that the variation of gap states with NO2 concentration is the key mechanism in a MoSe2 FET-based NO2 gas sensor. This comprehensive study, which addresses material growth, device fabrication, characterization, and device simulations, not only indicates the utility of MoSe2 FETs for high-performance chemical sensors, but also establishes a fundamental understanding of how surface chemistry influences carrier transport in layered semiconductor devices.

关键词： transition metaldichalcogenides MoSe2 chemical sensors chemical vapor depositon

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Erratum to： A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films

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Nano Research 2017年第8期10卷 I0002-I0004,F0003页

作者： Jongyeol Baek Demin Yin Na Liu inturu omkaram Chulseung Jung Healin Im Seongin Hong Seung Min Kim Young Ki Hong Jaehyun Hur Youngki Yoon Sunkook Kim School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 16419 Republic of Korea Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology (WIN) University of Waterloo Waterloo ON N2L 3GI Canada Institute of Advanced Composite Materials Korea Institute of Science and Technology (KIST) Jeonbuk 565-905 Republic of Korea Department of Chemical and Biological Engineering Gachon University Seongnam-si Gyeonggi 13120 Republic of Korea

AIMS ＆ SCOPENano Research is a peer-reviewed, international and interdisciplinary journal that focuses on all aspects of nanoscience and nanotechnology. Submissions are solicited in all topical areas, ranging from ba...

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