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Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

Light(Science & Applications) 2016年第1期5卷 760-766页

作者： Huseyin R Seren Jingdi Zhang George R Keiser Scott J Maddox Xiaoguang Zhao Kebin Fan Seth R Bank Xin Zhang Richard d Averitt Laboratory for Microsystems Technology Department of Mechanical EngineeringBoston UniversityBostonMA 02215USA department of Physics Boston UniversityBostonMA 02215USA department of Physics UC San DiegoLa JollaCA 92093USA School of Engineering Brown UniversityProvidenceRI 02912USA Microelectronics Research Center The University of Texas at AustinAustinTX 78758USA

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude,polarization,wave vector and frequency of *** of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier ***-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic *** present inas plasmonic disk arrays as a viable resonant metamaterial at terahertz ***,inas plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering,resulting in a reduced carrier mobility thereby damping the plasmonic *** demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers,including flexible nonlinear absorbers achieved by transferring the disks to polyimide *** plasmonic metamaterials show potential for use in ultrafast terahertz(THz)optics and for passive protection of sensitive electromagnetic devices.

关键词： nonlinear absorbers nonlinear metamaterials plasmonic semiconductor metamaterials terahertz metamaterials transfer printing

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A Study on The Optical Properties of inas Microcrystallites Embedded in SiO2 Glass Matrix

A Study on The Optical Properties of InAs Microcrystallites ...

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1996年中国青年学者物理学讨论会

作者： J.Z.Shi L.d.Zhang(Institute of Solid State Physics,Academia Sinica,Hefei 230031,P.R.China)

＜正＞Optical absorption spectra of inas mierocrystaUites exhibit a multi-peak structure and a very large blue shift of more than 2eV with respect to bulk material.A exlanation for this phenomenon was *** dependence o...

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Size and shape evolution of self-assembled coherent inas/GaAs quantum dots influenced by seed layer

Size and shape evolution of self-assembled coherent InAs/GaA...

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第一届全国纳米技术与应用学术会议

作者： H.Y. Liu , B. Xu, d. ding, Y.H. Chen, J. F. Zhang, J. Wu, and Z.G. WangLaboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy ofSciences, P. 0. Box 912, Beijing 100083, People''s Republic of China

＜正＞ The size and shape evolution of self-assembled inas quantum dots （Qds） influenced by 2.0-ML inas seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs（100） substrate. Based on comparisons with the evolution of inas islands on single layer samples at late growth stage, the bimodal size distribution of inas islands at 2.5-ML inas coverage and the formation of larger inas quantum dots at 2.9-ML deposition have been observed on the second inas layer. The further cross-sectional transmission electron microscopy measurement indicates the larger inas Qds at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of inas/GaAs Ods on the second layer will be presented.

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Temperature dependence of Photocarrier Redistribution in inas/GaAs Quantum dots

Temperature Dependence of Photocarrier Redistribution in InA...

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第一届全国纳米技术与应用学术会议

作者： Y.C. Zhang, C. J. Huang, J. Wu, Y. H. Cheng, B. Xu, d. ding, F. Q. Liu,Z. G. WangLaboratory of Semiconductor Materials Science, Institute of Semiconductor, P. O. Box 912, Beijing 100083 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, P. O. Box 912, Beijing 100083

＜正＞ In this work we report the photoluminescence （PL） study of multilayer inas/GaAs quantum dots grown by molecular beam epitaxy （MBE） on （100） oriented GaAs substrates. Low temperature PL shows a distinctive double-peak feature. Power-dependent PL and transmission electron microscopy （TEM） confirm that they come from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single Qds. The temperature-dependent PL are discussed in terms of thermalized redistribution of the carriers among groups of Qds of different sizes in the ensemble.

关键词： Quantum dots inas/GaAs MBE Photoluminescence Absorption

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