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Effects of Microstructure of Aluminum Substrate on Ordered Nanopore Arrays in Anodic Alumina

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Journal of Materials Science & Technology 2015年第7期31卷 751-758页

作者： Choong-Soo Chi Jong-Ho Lee insoo Kim Han-Jun oh School of Advanced Materials Engineering Kookmin University Department of Chemistry Hanseo University Advanced Materials Science and Engineering Kumoh National Institute of Technology Department of Materials Science Hanseo University

The effects of microstructure of aluminum substrate on regular nanopore arrangement in anodic alumina layer were investigated. The dissimilar microstructure and texture on aluminum sheets were prepared by various cold rollings and heat treatments, and anodic alumina nanoporous layers were fabricated by two step anodizing method at 40 V in oxalic acid solution. For the aluminum sheets with similar surface texture and annealing condition except purity, the regularity of the nanopore arrangement on the anodic alumina layer increased with purity of aluminum substrate. The difference of surface texture on AI sheets is not critical parameter for formation of ordered nanopore array compared with purity and heat treatment of substrate aluminum. The investigation suggested that the purity and reasonable annealing temperature of aluminum substrate are very important process to obtain the highly-ordered nanopore array on anodic alumina layer.

关键词： AnodizationNanoporous structureTextureAluminum alloy

Understanding the correlation between energy-state mismatching and open-circuit voltage loss in bulk heterojunction solar cells

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Carbon Energy 2024年第5期6卷 164-174页

作者： Hyun-Seock Yang Danbi Kim Chang-Mok oh Vellaiappillai Tamilavan Pesi MHangoma Hojun Yi Bo RLee insoo Shin In-Wook Hwang Sung Heum Park Pukyong National University BusanRepublic of Korea Clarendon Laboratory University of OxfordOxfordUK Institute of Energy Transport and Fusion Research Pukyong National UniversityBusanRepublic of Korea Advanced Photonics Research Institute Gwangju Institute of Science and TechnologyGwangjuRepublic of Korea Department of Chemical and Biomolecular Engineering Tandon School of EngineeringNew York UniversityBrooklynNew YorkUSA

Photoinduced intermolecular charge transfer(PICT)determines the voltage loss in bulk heterojunction(BHJ)organic photovoltaics(OPVs),and this voltage loss can be minimized by inducing efficient PICT,which requires energy-state matching between the donor and acceptor at the BHJ ***,both geometrically and energetically accessible delocalized state matching at the hot energy level is crucial for achieving efficient *** this study,an effective method for quantifying the hot state matching of OPVs was *** degree of energy-state matching between the electron donor and acceptor at BHJ interfaces was quantified using a mismatching factor(MF)calculated from the modified optical density of the ***,the correlation between the open-circuit voltage(Voc)of the OPV device and energy-state matching at the BHJ interface was investigated using the calculated *** OPVs with small absolute MF values exhibited high Voc *** result clearly indicates that the energy-state matching between the donor and acceptor is crucial for achieving a high Voc in *** the MF indicates the degree of energy-state matching,which is a critical factor for suppressing energy loss,it can be used to estimate the Voc loss in OPVs.

关键词： bulk heterojunction open circuit voltage organic photovoltaics photoinduced charge transfer voltage loss

Neural Network-Based State of Charge Estimation Method for Lithium-ion Batteries Based on Temperature

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Intelligent Automation & Soft Computing 2023年第5期36卷 2025-2040页

作者： Donghun Wang Jonghyun Lee Minchan Kim insoo Lee School of Electronic and Electrical Engineering Kyungpook National UniversityDaegu41566Korea

Lithium-ion batteries are commonly used in electric vehicles,mobile phones,and *** batteries demonstrate several advantages,such as environmental friendliness,high energy density,and long ***,battery overcharging and overdischarging may occur if the batteries are not monitored *** causesﬁre and explosion casualties,and overdischar-ging causes a reduction in the battery capacity and *** addition,the internal resistance of such batteries varies depending on their external temperature,elec-trolyte,cathode material,and other factors;the capacity of the batteries decreases with *** this study,we develop a method for estimating the state of charge(SOC)using a neural network model that is best suited to the external tem-perature of such batteries based on their *** our simulation,we acquired data at temperatures of 25°C,30°C,35°C,and 40°*** on the tem-perature parameters,the voltage,current,and time parameters were obtained,and six cycles of the parameters based on the temperature were used for the *** data to verify the proposed method were obtained through a discharge experiment conducted using a vehicle driving *** experi-mental data were provided as inputs to three types of neural network models:mul-tilayer neural network(MNN),long short-term memory(LSTM),and gated recurrent unit(GRU).The neural network models were trained and optimized for the speciﬁc temperatures measured during the experiment,and the SOC was estimated by selecting the most suitable model for each *** experimental results revealed that the mean absolute errors of the MNN,LSTM,and GRU using the proposed method were 2.17%,2.19%,and 2.15%,respec-tively,which are better than those of the conventional method(4.47%,4.60%,and 4.40%).Finally,SOC estimation based on GRU using the proposed method was found to be 2.15%,which was the most accurate.

关键词： Lithium-ionbattery state of charge multilayer neural network long short-term memory gated recurrent unit vehicle driving simulator

Amplification effect on stimulated Brillouin scattering in the S-band forward G652 fiber Raman amplifier

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Chinese Optics Letters 2005年第11期3卷 629-632页

作者：张在宣戴碧智李来晓徐海峰刘红林王剑锋李晨霞 insoo S.Kim Optoelectronics Technology Institute China Jiliang University Hangzhou 310018 Optoelectronics Technology Institute China Jiliang University Hangzhou 310018 College of Optics and Electronics University of Shanghai for Science and Technology Shanghai 200093 Optoelectronics Technology Institute China Jiliaag University Hangzhou 310018 Optoelectronics Technology Institute China Jiliang University Hangzhou 310018 College of Optics and Electronics University of Shanghai for Science and Technology Shanghai 200093 Optical Technology Research Group Korea Electrotechnology Research Institute Seoul 437-808 Korea

The amplification effects on forward and backward stimulated Brillouin scattering （SBS） lines in the forward pumped S-band distributed G652 fiber Raman amplifier （FRA） have been studied. There is a pump threshold power of Stokes backward stimulated Brillouin scattering （B-SBS） line in the forward pumped G652 FRA, it is about 1 mW. The Stokes B-SBS lines are amplified by FRA and fiber Brillouin amplifier （FBA）. The gain of amplification is given as Ga = GR· GB where Get is Raman gain and GB is Brillouin gain. In experimental work, the saturation gain of the first order Stokes backward SBS line is about 58 dB and the saturation gain of 25-km G652 forward FRA is about 25 dB, so the gain of FBA is about 33 dB. The forward stimulated Brillouin scattering （F-SBS） is generated and amplified in S-band G652 FRA. The stimulated threshold powers of the forward first order Stokes SBS （SB1^-）, second order Stokes SBS （SB2^-）, and third order SBS （SB3） in the forward pumped FRA are 2.3, 1.6, and 1.6 mW, respectively. In experimental work, the saturation gains of SB1^-, SB2^, and SB3 are about 38, 62, and 60 dB, respectively. The saturation Raman gain of 25-km G652 forward FRA is about 8.8 dB, so the Brillouin gains of SB1^-, SB2^-, and SB3 are about 29.2, 53.2, and 51.2 dB, respectively. The forward and backward cascaded SBS lines have been observed.

关键词： Light amplifiers Optical fibers Optical pumping

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G652光纤中背向自发拉曼散射的增益特性

光电子．激光 2006年第7期17卷 895-898页

作者：王剑锋张在宣徐海峰余向东 insoo S KIM 中国计量学院光电子技术研究所浙江杭州310018 韩国电气技术研究院

讨论了背向自发Raman散射脉冲在自生分布式G652光纤Raman放大器中传输的增益特性。实验发现,反Stokes Raman(ASR)和Stokes Raman(SR)自生分布式脉冲光纤Raman放大器的阈值抽运峰值功率是25.4 W和18.0 W。在入射功率为52 W时,ASR和SR的... 详细信息

讨论了背向自发Raman散射脉冲在自生分布式G652光纤Raman放大器中传输的增益特性。实验发现,反Stokes Raman(ASR)和Stokes Raman(SR)自生分布式脉冲光纤Raman放大器的阈值抽运峰值功率是25.4 W和18.0 W。在入射功率为52 W时,ASR和SR的增益分别为5.0 dB和8.6 dB。放大的反Stokes和Stokes背向自发Raman散射光时域反射(OTDR)曲线上放大的阈值时间位置随激发功率的增高前移并具有规律性。放大的ASR背向自发散射强度受光纤温度调制,具有温度效应,已应用于远程分布光纤Raman温度传感器系统。

关键词： Raman散射效应背向自发Raman散射光纤受激Raman散射(SRS) 单模光纤放大的背向自发反Stokes Raman(ASR)散射温度效应光时域反射(OTDR)

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掺铒光纤环形激光器输出特性的研究

光学学报 2003年第7期23卷 823-827页

作者：夏江珍蔡海文任虹李琳赵岭陈高庭方祖捷 insoo S.Kim 中国科学院上海光学精密机械研究所上海201800 韩国电气技术研究所韩国昌原641600

根据掺铒光纤激光器的速率方程 ,对环形腔光纤激光器的输出特性进行了理论分析 ,得到了光纤激光器在稳态条件下阈值抽运功率、激光输出功率和斜率效率的解析表达式。利用数值模拟结果对光纤激光器的这些基本特性参量进行了分析和讨论 ,... 详细信息

根据掺铒光纤激光器的速率方程 ,对环形腔光纤激光器的输出特性进行了理论分析 ,得到了光纤激光器在稳态条件下阈值抽运功率、激光输出功率和斜率效率的解析表达式。利用数值模拟结果对光纤激光器的这些基本特性参量进行了分析和讨论 ,为光纤环形激光器的优化设计提供了依据。并进行了 980nm抽运的掺铒光纤激光器的实验。

关键词：掺铒光纤环形激光器速率方程稳态特性输出特性优化设计阈值输出功率斜率效率

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全光纤调Q掺铒光纤激光器的脉冲研究

光子学报 2002年第8期31卷 989-992页

作者：夏江珍蔡海文任虹瞿荣辉陈高庭方祖捷 KIM insoo S 中国科学院上海光学精密机械研究所上海*** Korea Electrotechnology Research Institute

报道一种全光纤调Q掺铒光纤激光器 ,在其结构中采用带有光纤光栅的光纤环形镜作为调Q装置此调Q方案同时具有对腔内损耗进行调制和对激光输出波长选择的功能理论上分析了不同臂长差时的脉冲出现情况 ,与实验基本相符

关键词：掺铒光纤激光器脉冲光纤激光器臂长差光纤光栅光纤环形镜调Q激光器

30km远程分布光纤拉曼温度传感器系统的实验研究

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中国激光 2004年第5期31卷 613-616页

作者：张在宣王剑锋刘红林余向东郭宁 insoo S.KIM 中国计量学院光电子技术研究所浙江杭州310034 韩国电气技术研究院

研制成功一套 30km远程分布光纤拉曼温度传感器 (DOFRTS)系统 ,采用了新的光纤放大的反斯托克斯背向拉曼自发散射测温原理和 15 5 0nm掺铒光纤激光器作为抽运源及高速瞬态波形采样技术 ,累加平均等信号处理技术 ,提高了信噪比 ,解决了... 详细信息

研制成功一套 30km远程分布光纤拉曼温度传感器 (DOFRTS)系统 ,采用了新的光纤放大的反斯托克斯背向拉曼自发散射测温原理和 15 5 0nm掺铒光纤激光器作为抽运源及高速瞬态波形采样技术 ,累加平均等信号处理技术 ,提高了信噪比 ,解决了弱信号检测问题。使用智能化恒温技术 ,使主要元器件在恒温条件下工作 ,解决了工程应用中环境的适应性问题。经鉴定 ,远程分布光纤拉曼温度传感器系统的主要技术指标如下 :光纤长度为 31km ,测温范围为 0～ 10 0℃ (可扩展 ) ,温度测量不确定度为± 2℃ ,温度分辨率为 0 1℃ ,测量时间为 4 32s,空间分辨率为 4m。

关键词：传感器技术光纤传感器背向拉曼散射光纤放大反斯托克斯拉曼自发散射光时域反射技术

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光纤光栅环形镜的全光纤调Q掺铒光纤激光器

光电工程 2003年第1期30卷 11-15页

作者：夏江珍蔡海文任虹瞿荣辉陈高庭方祖捷 insoo S.KIM 中国科学院上海光学精密机械研究所上海201800 KoreaElectrotechnologyResearchInstitute

报道一种新型全光纤调Q掺铒光纤激光器,在其结构中采用带有光纤光栅的光纤环形镜作为调Q装置。此调Q方案同时提供了腔内损耗调制和对激光输出波长选择的功能。与声光、电光等调Q相比,其输出脉冲比较宽。但此全光纤Q开关装置与光纤熔接... 详细信息

报道一种新型全光纤调Q掺铒光纤激光器,在其结构中采用带有光纤光栅的光纤环形镜作为调Q装置。此调Q方案同时提供了腔内损耗调制和对激光输出波长选择的功能。与声光、电光等调Q相比,其输出脉冲比较宽。但此全光纤Q开关装置与光纤熔接损耗小,从而克服了体光学调制器与光纤对接时插入损耗高的特点。

关键词：光纤激光器 Q开关调Q装置光纤光栅环形镜掺饵光纤激光器