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Journal of Semiconductors 2024年第8期45卷 67-73页

作者： Siyi Huang masao ikeda Feng Zhang Minglong Zhang Jianjun Zhu Shuming Zhang Jianping Liu School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China Key Laboratory of Nanodevices and Applications Chinese Academy of SciencesSuzhou 215123China

Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this *** annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping *** concentration,resistivity and mobility were characterized by room-temperature Hall *** Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the *** hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature *** appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.

关键词： p-GaN hole concentration electrical properties annealing ionization energy

Controllable step-flow growth of GaN on patterned freestanding substrate

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Journal of Semiconductors 2024年第2期45卷 46-50页

作者： Peng Wu Jianping Liu Lei Hu Xiaoyu Ren Aiqin Tian Wei Zhou Fan Zhang Xuan Li masao ikeda Hui Yang Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Shanghai Advanced Research Institute Chinese Academy of SciencesShanghai 201210China University of Chinese Academy of Sciences Beijing 100049China

A new kind of step-flow growth mode is proposed,which adopts sidewall as step source on patterned GaN *** terrace width of steps originated from the sidewall was found to change with the growth temperature and ammonia *** growth mechanism is explained and simulated based on step motion *** work helps better understand the behaviors of step advancement and puts forward a method of precisely modulating atomic steps.

关键词： step-flow growth GaN terrace width step motion

Design of an Interpolated Controller for Stabilization of a Plant with Variable Operating Condition

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Journal of Systems Engineering and Electronics 2000年第2期11卷 39-47页

作者： Yuan, Xiangyang Shi, Songjiao ikeda, masao Shanghai Jiaotong Univ Shanghai China

In this paper, the stabilization of a linear SISO plant with variable operating condition is considered. The plant is described by a linear interpolation of proper stable co-prime factorizations of the transfer functions at two representative operating points. An interpolation of the stabilizing controllers for the representative models is designed to stabilize the plant, and the necessary and sufficient condition for the plant to be stabilized by the proposed controller is presented using the Nevanlinna-Pick interpolation theory. It is shown that the class of stabilization plants via the proposed controller in the paper is larger than that by the controller in reference. An example is also given to illustrate this fact.

关键词： Closed loop control systems Control system analysis Interpolation System stability Transfer functions

Fault-tolerant decentralized H-infinity control for multi-channel systems using homotopy method

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控制理论与应用（英文版） 2007年第1期5卷 77-82页

作者： Ning CHEN Weihua GUI masao ikeda School of Information Science ＆ Engineering Central South University Changsha Hunan 410083 China Graduate School of Engineering Osaka University Suita Osaka 565-0871 Japan

This paper considers a fault-tolerant decentralized H-infinity control problem for multi-channel linear time-invariant systems. The purpose is to design a decentralized H-infinity output feedback controller *** the given system and achieve a certain H-infinity performance requirement both in the normal situation and in the situation where any one of the local controllers fails. The designed problem is reduced to a feasibility problem of a set of bilinear matrix inequalities （BMIs）. An algorithm is proposed to solve the BMIs. First, the normal situation is considered where all the local controllers are functioning. The local controllers are obtained from a standard centralized H-infinity controller by using a homotopy method imposing a structural constraint progressively. Secondly, the above case is extended to the one where any one of the local controllers fails. We again use a homotopy method where the coefficient matrices of the failed controller are decreased progressively to zero. The efficiency of the proposed algorithm is demonstrated by an example.

关键词： Decentralized control H-infinity control Fault-tolerant Control BMI Homotopy method

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers

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Journal of Semiconductors 2022年第9期43卷 81-86页

作者： Minglong Zhang masao ikeda Siyi Huang Jianping Liu Jianjun Zhu Shuming Zhang Hui Yang School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting *** effects of surface chemical treatment and annealing temperature were *** optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had ***-containing metal showed~35%lower com-pared to that of single *** thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without *** current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also *** lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).

关键词： GaN ohmic contact specific contact resistance

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不确定多通道奇异大系统分散鲁棒H_∞控制

控制理论与应用 2007年第2期24卷 322-328页

作者：陈宁桂卫华 ikeda masao 中南大学信息科学与工程学院湖南长沙410083 大阪大学工学研究科

研究不确定多通道奇异系统的鲁棒分散H_∞控制问题,假定不确定性是时不变、范数有界,且存在于系统和控制输入矩阵中．主要考虑分散H_∞输出反馈控制问题．推导出了使不确定多通道奇异系统能鲁棒稳定且满足一定的性能指标的充分必要条件... 详细信息

研究不确定多通道奇异系统的鲁棒分散H_∞控制问题,假定不确定性是时不变、范数有界,且存在于系统和控制输入矩阵中．主要考虑分散H_∞输出反馈控制问题．推导出了使不确定多通道奇异系统能鲁棒稳定且满足一定的性能指标的充分必要条件,没有等式约束的非线性矩阵不等式条件,采用两步同伦法迭代来求解非线性矩阵不等式(NMI),首先,通过逐步对控制器的系数矩阵加上结构限制,计算出当确定性不存在时的标称系统的分散H_∞控制器．然后,逐步改变标称系统分散控制器的系数,计算出不确定性参数存在时的分散鲁棒控制器．在每一阶段,每一次迭代过程中,通过交替固定NMI的一个变量,使NMI转变为线性矩阵不等式(LMI)．数值例子说明了本文提出的方法的有效性．

关键词：分散H∞控制奇异系统参数不确定性同伦法非线性矩阵不等式 LMI

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基于学习的自校正控制算法

上海交通大学学报 2000年第5期34卷 638-641页

作者：袁向阳施颂椒 masao ikeda 上海交通大学自动化系上海200030 日本大阪大学工学部

提出了一种基于学习的自校正控制算法 ,算法中包含一个自适应模型和多个固定模型 ,每一个模型都有一个相对应的控制器 .在每一采样时刻 ,将当前时段内具有最小预测误差的模型对应的控制器的输出作为控制输入 .在该算法中 ,自适应模型和... 详细信息

提出了一种基于学习的自校正控制算法 ,算法中包含一个自适应模型和多个固定模型 ,每一个模型都有一个相对应的控制器 .在每一采样时刻 ,将当前时段内具有最小预测误差的模型对应的控制器的输出作为控制输入 .在该算法中 ,自适应模型和自适应控制器的作用是确保闭环系统的稳定性和输出跟踪误差的渐近收敛性 ,而固定模型和固定控制器的作用是当被控对象的参数发生变化时 ,在自适应模型的参数估计收敛之前 ,暂时担当控制器的角色 ,以改善闭环系统的暂态响应 .文中证明了闭环系统的稳定性和输出跟踪误差的渐近收敛性 .仿真结果表明算法的有效性 .

关键词：自校正控制自学习暂态响应算法工业过程控制

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一类工作点可变线性系统的镇定控制器设计

上海交通大学学报 2000年第5期34卷 657-660页

作者：袁向阳施颂椒 masao ikeda 上海交通大学自动化系上海200030 日本大阪大学工学部

对于一类工作点可变的线性系统 ,即被控系统表达为两个典型工作点上的传递函数矩阵的正则稳定的既约分解的线性内插 ,考虑其镇定控制器设计问题 .假设被控对象在典型工作点上的传递函数矩阵的既约分解组成一个集合 ,提出了镇定该集合的... 详细信息

对于一类工作点可变的线性系统 ,即被控系统表达为两个典型工作点上的传递函数矩阵的正则稳定的既约分解的线性内插 ,考虑其镇定控制器设计问题 .假设被控对象在典型工作点上的传递函数矩阵的既约分解组成一个集合 ,提出了镇定该集合的控制器的设计方法 .对于线性内插系数不可知的情形 ,提出了两种固定型镇定控制器的设计方法 ;对于线性内插系数可知的情形 ,提出了一种内插型镇定控制器设计方法 .文中将控制器的设计问题转化为 H∞ 控制问题 ,再转化为状态空间下的基于线性矩阵不等式 ( LMI)

关键词：线性系统工作点可变镇定控制器 LMI H∞控制

High quality non-rectifying contact of ITO with both Ni and n-type GaAs

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Journal of Semiconductors 2015年第5期36卷 14-18页

作者：王青松 masao ikeda 谭明代盼吴渊渊陆书龙杨辉 Key Laboratory Nano-Devices and Application Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology Institute University of Science and Technology of China University of Chinese Academy of Sciences

We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.

关键词： ITO electron beam evaporation ITO/n-GaAs specific contact resistance

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

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Journal of Semiconductors 2023年第5期44卷 62-68页

作者： Siyi Huang masao ikeda Minglong Zhang Jianjun Zhu Jianping Liu School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China Key Laboratory of Nanodevices and Applications Chinese Academy of SciencesSuzhou 215123China

A suitable contacting scheme for p-(Al)GaN facilitating quick feedback and accurate measurements is proposed in this study.22 nm p^(+)-GaN followed by 2 nm p-In_(0.2)Ga_(0.8)N was grown on p-type layers by metal-organic chemical vapor *** were then cut into squares after annealing and contact electrodes using In balls were put at the corners of the *** linearity between all the electrodes was confirmed inⅠ–Ⅴcurves during Hall measurements even with In *** samples taken from the same wafer showed small standard deviation of~4%for resistivity,Hall mobility and hole *** influence of contact layer on the electrical characteristics of bulk p-type layers was then investigated by step etching technique using inductively coupled plasma etching and subsequent Hall-effect *** values could be obtained consistently when a 28 nm non-conductive layer thickness at the surface was taken into ***,the procedures for evaluating the electrical properties of GaN-based p-type layers just using In balls proposed in this study are shown to be quick and useful as for the other conventionalⅢ–Ⅴmaterials.

关键词： GaN electrical properties ohmic contact