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Agromorphological Characterization of Introgression Lines Derived from Wild and Exotic Sorghum Germplasm to Climate Change Challenges

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Agricultural Sciences 2021年第10期12卷 1129-1149页

作者： Ouindyam Colette Ouédraogo Nerbéwendé Sawadogo Eva Weltzien Baloua Nebie Fred Rattunde Aboubacar Touré ibrahima sissoko Mahamadou Sawadogo Equipe Génétique et Amélioration des Plantes Laboratoire Biosciences Ecole Doctorale Sciences et Technologies Université Joseph Ki-Zerbo Ouagadougou Burkina Faso International Crops Research Institute for the Semi-Arid Tropics (ICRISAT) Bamako Mali University of Wisconsin-Madison Madison WI USA

Sorghum (Sorghum bicolor (L.) Moench) is vitally important for food security in semi-arid West Africa. The introgression of wild- and high transpiration efficiency genotypes may contribute genes for abiotic stress tolerance or novel traits. Characterizing the introgressed lines can help researchers in the process of varietal improvement. The objectives of this study are (i) To learn if introgression of wild sorghum (CWR) and high transpiration efficiency (HTE) lines into a very early maturing (photoperiod insensitive) local land-race variety can create useful variation for grain yield in drought-prone Sahelian environments, (ii) To determine if grain yield advantages (and putative drought tolerance traits) obtained from introgression of CWR and HTE germplasm are expressed differently in moderately to highly moisture-limited environments, and (iii) To understand the relationship between putative drought tolerance traits. These populations were developed from crosses between the CSM63E (Jakumbe, a high grains quality variety) and two wild parents (accessions) and five high transpiration efficiency (TE) sorghum accessions. Phenotyping was conducted using an alpha lattice design with three replications in two environments for agronomic traits (grain yield and components), flowering time and physiological traits (stay-green, chlorophyll content and lodging). A total of 669 BC1F5 progenies were developed. Genetic variation for grain yield and putative drought tolerant traits were evaluated. Both populations derived from wild parents exhibited in Cinzana a grain yield (>300 g/m2) greater than CSM63E (245 g/m2). In Bema, more than 75% of the progenies of all populations indicated a chlorophyll content at physiological maturity (>30 SPAD) higher than CSM63E (20 SPAD) chlorophyll content. The estimated broad sense heritability was generally high (≥0.50) for all traits. The results also showed a very significant interaction between genotype and e

关键词： Sorghum Transpiration Drought Variability Climate Change

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Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light

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World Journal of Condensed Matter Physics 2016年第3期6卷 261-268页

作者： ibrahima Diatta ibrahima Ly Mamadou Wade Marcel Sitor Diouf Senghane Mbodji Grégoire sissoko Physics Department Faculty of Sciences and Techniques University of Cheikh Anta Diop Dakar Senegal Electromechanical Engineering Department Polytechnic School of Thies University Thies Senegal University of Alioune DIOP Bambey Senegal

In static regime with polychromatic illumination, using the expression of the solar cell capacitance to determine the silicon solar cell capacitance C0(T) in short-circuit, is the purpose of this article. The expression of the excess minority carries density δ(x) from the continuity equation. The expression of δ(x) is used to determine the photovoltage expression. The capacitance efficiency dependence on Xcc(T) is studied. Xcc(T) is the abscissa of the maximum of δ(x).

关键词： Solar Cell Capacitance Temperature

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Experimental Processus for Acquisition Automatic Features of I-V Properties and Temperature of the Solar Panel by Changing the Operating Point

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Circuits and Systems 2016年第11期7卷 3984-4000页

作者： Babou Dione Ousmane Sow Mamadou Wade L. Y. ibrahima Senghane Mbodji Gregoire sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal University Institute of Technology University of Thiès Thiès Sénégal Polytechnic School of Thiès Thiès Sénégal Université Alioune DIOP de Bambey Bambey Sénégal

A development of an acquisition of the characteristic of a solar panel by automatic load variation system is put into play and coupled to an instrumentation chain for taking account of temperature. A programmed digital microprocessor control enables this automation. Design and implementation of a device for automation of variations of the resistive load are powered by solar panel. It is provided by a PIC 16F877A running a computer program that we have developed on the basis of an algorithm according to the operation that we have set. By varying automatically the resistive load, we were able to automatically acquire the characteristic I-V and temperature of the solar panel. With automatic combinations of the 10 resistors, we have obtained 1024 measures of the characteristic curve of the solar cell which has a good accuracy. The change in load and temperature measurement allows us to have the characteristic curves parameterized by temperature.

关键词： Microcontroller Solar Panel Temperature I-V PIC 16F877A

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Analysis of T-Coefficients Using the Columnar Cylindrical Orientation of Solar Cell Grain

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Smart Grid and Renewable Energy 2018年第3期9卷 43-56页

作者： Serigne Ndiangue Leye ibrahima Fall Senghane Mbodji Papa Lat Tabara Sow Gregoire sissoko Research Team in Renewable Energies Materials and Laser of Department of Physics Alioune DIOP University of Bambey Bambey Senegal Laboratory of Semiconductors and Solar Energy Department of Physics Faculty of Science and Technology Cheikh Anta Diop University Dakar Senegal

We report the study of the temperature dependance of the performance electronic parameters of an N-P solar cell by considering as model, the columnar cylindrical orientation associated to the dynamic junction velocity (SF) concept. We presented the photocurrent-photovoltage (I-V) and Power-photovoltage (P-V) characteristic curves. The short-circuit photocurrent (Isc), the open circuit photovoltage (Uoc), the fill factor (FF) and the efficiency (η) are linearly dependent on the temperature. The temperature coefficients (T-coefficient) relative to the short-circuit, open-circuit photovoltage and efficiency are calculated and the comparison with data from the literature showed the accuracy of the considered model.

关键词： Polycrystalline Solar Cell Junction Recombination Velocity Temperature

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Minority Carrier Diffusion Coefficient D*(B,T): Study in Temperature on a Silicon Solar Cell under Magnetic Field

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Energy and Power Engineering 2017年第1期9卷 1-10页

作者： Richard Mane ibrahima Ly Mamadou Wade ibrahima Datta Marcel S. Douf Youssou Traore Mor Ndiaye Seni Tamba Grégoire sissoko Laboratoire des Semi-conducteurs et d’Energie Solaire Facult&eacute des Sciences et Techniques Universit&eacute Cheikh Anta Diop Dakar S&eacute né gal Ecole Polytechnique de Thiè s Thi&egrave s S&eacute né gal

This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal behavior of minority carrier that is better understood with Umklapp process. This study allowed to determine an optimum temperature which led to maximum diffusion coefficient value while magnetic field remained constant.

关键词： Solar cell Diffusion Coefficient Temperature Magnetic Field

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n+-p-p+Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

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Journal of Electromagnetic Analysis and Applications 2020年第7期12卷 103-113页

作者： Cheikh Thiaw Mamadou Lamine Ba Mamour Amadou Ba Gora Diop ibrahima Diatta Mor Ndiaye Gregoire sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal

Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n+-p-p+ under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier’s recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.

关键词： Silicon Solar Cell Magnetotransport Surface Recombination Velocity Base Thickness

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Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

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Journal of Modern Physics 2018年第2期9卷 172-188页

作者： Bakary Dit Dembo Sylla ibrahima Ly Ousmane Sow Babou Dione Youssou Traore Grégoire sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Electromecanical department Polytechnic School of Thiès Thiès Senegal University Institute of Technology University of Thiès Thiès Senegal

In this work, we study the method for determining the maximum of the minority carrier recombination velocity at the junction Sfmax, corresponding to the maximum power delivered by the photovoltaic generator. For this, we study the temperature influence on the behavior of the front white biased solar cell in steady state. By solving the continuity equation of excess minority carrier in the base, we have established the expressions of the photocurrent density, the recombination velocity on the back side of the base Sb, and the photovoltage. The photocurrent density and the photovoltage are plotted as a function of Sf, called, minority carrier recombination velocity at the junction surface, for different temperature values. The illuminated I-V characteristic curves of the solar cell are then derived. To better characterize the solar cell, we study the electrical power delivered by the base of the solar cell to the external charge circuit as either junction surface recombination velocity or photovoltage dependent. From the output power versus junction surface recombination velocity Sf, we have deduced an eigenvalue equation depending on junction recombination velocity. This equation allows to obtain the maximum junction recombination velocity Sfmax corresponding to the maximum power delivered by the photovoltaic generator, throughout simulink model. Finally, we deduce the conversion efficiency of the solar cell.

关键词： Silicon Solar Cell-Junction Surface Recombination Velocity-Maximum Power

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Ac Recombination Velocity in a Lamella Silicon Solar Cell

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World Journal of Condensed Matter Physics 2018年第4期8卷 185-196页

作者： Matar Gueye Hawa Ly Diallo Attoumane Kosso Mamadou Moustapha Youssou Traore ibrahima Diatta Gregoire sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal School of Mines and Geology Niamey Niger

The silicon solar cell with series-connected vertical junction is studied with different lamella widths—the expression of the ac recombination velocity of the excess minority carrier at the back surface is establishe... 详细信息

关键词： Silicon Solar Cell-Vertical Junction Series Ac Recombination Velocity Lamella Width

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Determination of the Base Optimum Thickness of Back Illuminated (n⁺/p/p⁺) Bifacial Silicon Solar Cell, by Help of Diffusion Coefficient at Resonance Frequency

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Journal of Electromagnetic Analysis and Applications 2023年第2期15卷 13-24页

作者： Mohamed Yaya Teya Ousmane Sow Khady Loum ibrahima Diatta Gora Diop Youssou Traore Mamadou Wade Gregoire sissoko International Research Group in Renewable Energy (GIRER) Dakar Senegal Ecole Polytechnique de Thiès Thiès Senegal Institut Universitaire de Technologie Université Iba Der THIAM Thiès Senegal

The bifacial silicon solar cell subjected to a magnetic field, is illuminated by the back side by a monochromatic light in frequency modulation, with high absorption, At minority carriers diffusion coefficient resonance frequency, a graphical study of the expressions of recombination velocity on the rear side is carried out. The optimum thickness of the base of the bifacial solar cell is deduced for each resonance frequency.

关键词： Bifacial Silicon Solar Cell Frequency Magnetic Field Wavelength-Recombination Velocity Base Thickness

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Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

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Journal of Modern Physics 2019年第13期10卷 1596-1605页

作者： Nouh Mohamed Moctar Ould Mohamed Ousmane Sow Sega Gueye Youssou Traore ibrahima Diatta Amary Thiam Mamour Amadou Ba Richard Mane ibrahima Ly Gregoire sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal University Institute of Technology University of Thiès Thiès Sénégal Ecole Polytechnique de Thiès Thiès Sénégal

The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.

关键词： Silicon Solar Cell Diffusion Coefficient Surface Recombination Velocity Optimum Base Thickness Lorentz and Umklapp Processes

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