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One-Dimensional(NH=CINH_(3))_(3)PbI_(5)Perovskite for Ultralow Power Consumption Resistive Memory

Research 2021年第1期2021卷 704-712页

作者： Xuefen Song Hao Yin Qing Chang Yuchi Qian Chongguang Lyu huihua min Xinrong Zong Chao Liu Yinyu Fang Zhengchun Cheng Tianshi Qin Wei Huang Lin Wang Key Laboratory of Flexible Electronics(KLOFE)&Institute of Advanced Materials(IAM) Nanjing Tech University(Nanjing Tech)30 South Puzhu RoadNanjing 211816China Electron Microscope Laboratory Nanjing Forestry UniversityNanjing 210037China MIIT Key Laboratory of Flexible Electronics(KLoFE) Shaanxi Key Laboratory of Flexible Electronics(KLoFE)Xi’an Key Laboratory of Flexible Electronics(KLoFE)Xi’an Key Laboratory of Biomedical Materials&EngineeringXi’an Institute of Flexible ElectronicsInstitute of Flexible Electronics(IFE)Northwestern Polytechnical UniversityXi’an710072 ShaanxiChina

Organic-inorganic hybrid perovskites(OIHPs)have proven to be promising active layers for nonvolatile memories because of their rich abundance in earth,mobile ions,and adjustable ***,there is a lack of investigation on controllable fabrication and storage properties of one-dimensional(1D)***,the growth of 1D(NH=CINH_(3))_(3)PbI_(5)((IFA)_(3)PbI_(5))perovskite and related resistive memory properties are *** solution-processed 1D(IFA)_(3)PbI_(5)crystals are of welldefined monoclinic crystal phase and needle-like shape with the length of about 6 *** exhibit a wide bandgap of 3 eV and a high decomposition temperature of 206℃.Moreover,the(IFA)_(3)PbI_(5)films with good uniformity and crystallization were obtained using a dual solvent of N,N-dimethylformamide(DMF)and dimethyl sulfoxide(DMSO).To study the intrinsic electric properties of this anisotropic material,we constructed the simplest memory cell composed of only Au/(IFA)_(3)PbI_(5)/ITO,contributing to a high-compacted device with a crossbar array device *** resistive random access memory(ReRAM)devices exhibit bipolar current-voltage(I-V)hysteresis characteristics,showing a record-low power consumption of~0.2 mW among all OIHP-based ***,our devices own the lowest power consumption and“set”voltage(0.2 V)among the simplest perovskite-based memory devices(inorganic ones are also included),which are no need to require double metal electrodes or any additional insulating *** also demonstrate repeatable resistance switching behaviour and excellent retention *** envision that 1D OIHPs can enrich the low-dimensional hybrid perovskite library and bring new functions to low-power information devices in the fields of memory and other electronics applications.

关键词： perovskite inorganic crystallization

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