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Atomically thin α-In2Se3: an emergent two-dimensional room temperature ferroelectric semiconductor

Journal of Semiconductors 2019年第6期40卷 18-24页

作者： Yue Li Ming Gong hualing zeng International Center for Quantum Design of Functional Materials (ICQD) Hefei National Laboratory for Physical Science at the Microscale University of Science and Technology of China Hefei 230026 China Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences Department of Physics University of Science and Technology of China Hefei 230026 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei 230026 China Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 China

Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film thickness is reduced to nanometer or single atomic layer limit. Two-dimensional(2D) materials, thanks to their stable layered structure, saturate interfacial chemistry, weak interlayer couplings, and the benefit of preparing stable ultra-thin film at 2D limit, are promising for exploring 2D ferroelectricity and related device applications. Therefore, it provides an effective approach to overcome the limitation in conventional ferroelectrics with the study of 2D ferroelectricity in van der Waals(vdW) materials. In this review article,we briefly introduce recent progresses on 2D ferroelectricity in layered vdW materials. We will highlight the study on atomically thin α-In2Se3, which is an emergent ferroelectric semiconductor with the coupled in-plane and out-of-plane ferroelectricity. Furthermore, two prototype ferroelectric devices based on ferroelectric α-In2Se3 will also be reviewed.

关键词： electric polarization 2D materials 2D ferroelectrics

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Room-temperature vertical ferroelectricity in rhenium diselenide induced by interlayer sliding

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Frontiers of physics 2023年第5期18卷 143-151页

作者： Fang Li Jun Fu Mingzhu Xue You Li hualing zeng Erjun Kan Ting Hu Yi Wan MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing and Department of Applied PhysicsNanjing University of Science and TechnologyNanjing 210094China International Center for Quantum Design of Functional Materials(ICQD) Hefei National Laboratory for Physical Sciences at the Microscaleand Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026China State Key Laboratory for Artificial Microstructure&Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China

One variety of ferroelectricity that results from lateral relative movements between the adjacent atomic layers is referred to as sliding ferroelectricity,which generates an interfacial charge transfer and hence a polarization *** mechanism of sliding ferroelectricity existent in van der Waals crystals is quite distinct from the conventional ferroelectric switching mechanisms mediated by ion *** creates new possibilities for the design of two-dimensional(2D)ferroelectrics since it can be achieved even in non-polar *** 2D ferroelectrics can be widely employed for practical implementations,however,there is still significant work to be done on several fronts,such as exploring ferroelectricity possibly in more potential 2D ***,we report the experimental observation of room-temperature robust vertical ferroelectricity in layered semiconducting rhenium diselenide(ReSe_(2)),a representative member of the transition metal dichalcogenides material family,based on a combined research of nanoscale piezoresponse and second harmonic generation *** no such ferroelectric behavior was seen in 1L ReSe_(2),2L ReSe_(2)exhibits vertical ferroelectricity at ambient *** on density-functional theory calculations,we deduce that the microscopic origin of ferroelectricity for ReSe_(2)is uncompensated vertical charge transfer that is dependent on in-plane translation and switchable upon interlayer *** findings have important ramifications for the ongoing development of sliding ferroelectricity since the semiconducting properties and low switching barrier of ReSe2 open up the fascinating potential for functional nanoelectronics applications.

关键词： rhenium diselenide transition metal dichalcogenides vertical ferroelectricity sliding ferroelectricity

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Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe_(5) Thin Layers

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Chinese Physics Letters 2021年第1期38卷 86-91页

作者： Peng Wang Tao Hou Fangdong Tang Peipei Wang Yulei Han Yafei Ren hualing zeng Liyuan Zhang Zhenhua Qiao International Center for Quantum Design of Functional Materials Hefei National Laboratory for Physical Sciences at the MicroscaleSynergetic Innovation Centre of Quantum Information and Quantum PhysicsCAS Key Laboratory of Strongly Coupled Quantum Matter Physicsand Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026China Department of Physics Southern University of Science and Technologyand Shenzhen Institute for Quantum Science and EngineeringShenzhen 518055China Solid State Nanophysics Max Plank Institute for Solid State ResearchStuttgartGermany

We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe_(5) thin *** observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T_(p).Below T_(p),the anisotropic magnetoresistance is negative with large negative *** the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its *** negative longitudinal magnetoresistance effect in HfTe_(5) thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac *** potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface *** findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.

关键词： magnetoresistance anisotropic attributed

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Planar-symmetry-breaking induced antisymmetric magnetoresistance in van der Waals ferromagnet Fe_(3)GeTe_(2)

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Nano Research 2022年第3期15卷 2531-2536页

作者： Ping Liu Caixing Liu Zhi Wang Meng Huang Guojing Hu Junxiang Xiang Chao Feng Chen Chen Zongwei Ma Xudong Cui hualing zeng Zhigao Sheng Yalin Lu Gen Yin Gong Chen Kai Liu Bin Xiang Hefei National Laboratory for Physical Sciences at the Microscale Department of Materials Science&EngineeringCAS Key Lab of Materials for Energy ConversionUniversity of Science and Technology of ChinaHefei 230026China School of Science Nanjing University of Posts and TelecommunicationsNanjing 210023China Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field LaboratoryChinese Academy of SciencesHefei 230031China Sichuan New Materials Research Center Institute of Chemical MaterialsCAEPChengdu 610200China Anhui Laboratory of Advanced Photon Science and Technology University of Science and Technology of ChinaHefei 230026China Physics Department Georgetown UniversityWashingtonDC 20057USA

Recently discovered magnetic van der Waals(vdW)materials provide an ideal platform to explore low-dimensional magnetism and spin *** vdW interaction nature opens up unprecedented opportunities to build vertically stacked heterostructures with novel properties and *** engineering the planar structure as an alternative degree of freedom,herein we demonstrate an antisymmetric magnetoresistance(MR)in a vdW Fe_(3)GeTe_(2)flake with a step terrace that breaks the planar *** antisymmetric MR originates from a sign change of the anomalous Hall effect and the continuity of the current transport near the boundary of magnetic domains at the step edge.A repeatable domain wall due to the unsynchronized magnetization switching is responsible for this sign *** interpretation is supported by the observation of field-dependent domain switching,and the step thickness,temperature,and magnetic field orientation dependent *** work opens up new opportunities to encode magnetic information by controlling the planar domain structures in vdW magnets.

关键词： 2D magnetism Fe_(3)GeTe_(2) planar structure engineering antisymmetric magnetoresistance

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Magnetic Phase Transition in Two-Dimensional CrBr_(3) Probed by a Quantum Sensor

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Chinese Physics Letters 2022年第4期39卷 79-82页

作者： Haodong Wang Peihan Lei Xiaoyu Mao † Xi Kong Xiangyu Ye Pengfei Wang Ya Wang Xi Qin Jan Meijer hualing zeng Fazhan Shi Jiangfeng Du Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences University of Science and Technology of ChinaHefei 230026China CAS Key Laboratory of Microscale Magnetic Resonance University of Science and Technology of ChinaHefei 230026China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China National Laboratory of Solid State Microstructures and Department of Physics Nanjing UniversityNanjing 210093China Felix-Bloch Institute for Solid State Physics University LeipzigLinn´e Str.5D-04103 LeipzigGermany

Recently,magnetism in two-dimensional(2 D)van der Waals(vd W)materials has attracted wide *** is anticipated that these materials will stimulate discovery of new physical phenomena and novel *** capability to quantitatively measure the magnetism of 2 D magnetic vd W materials is essential to understand these *** we report on quantitative measurements of ferromagnetic-to-paramagnetic phase transition of an atomically thin(down to 11 nm)vd W magnet,namely Cr Br_(3),with a Curie point of 37.5 *** experiment demonstrates that surface magnetism can be quantitatively investigated,which is useful for a wide variety of potential applications.

关键词： materials Transition Probe

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二维材料中的室温铁电性及器件应用

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中国科学技术大学学报 2018年第12期48卷 955-967页

作者：李悦万思源曾华凌中国科学技术大学合肥微尺度物质科学国家研究中心国际功能量子材料设计中心中国科学技术大学物理系中国科学院强耦合量子材料物理重点实验室

室温超薄铁电体是制备大容量非易失性存储器的关键材料.在过去的几十年,以钙钛矿结构复杂氧化物为代表的传统铁电薄膜吸引了广泛的关注.然而,受限于潜在的临界尺寸效应,即在其厚度减薄的过程中铁电性会出现减弱甚至消失的现象,发展基于... 详细信息

室温超薄铁电体是制备大容量非易失性存储器的关键材料.在过去的几十年,以钙钛矿结构复杂氧化物为代表的传统铁电薄膜吸引了广泛的关注.然而,受限于潜在的临界尺寸效应,即在其厚度减薄的过程中铁电性会出现减弱甚至消失的现象,发展基于传统铁电体的纳米电子学器件遇到了极大的挑战.二维范德华材料得益于天然稳定的层状结构、表面饱和的化学特性以及层间微弱的相互作用,为在原子尺度极限厚度下实现二维铁电性提供了优良的平台.层状二维铁电材料将为未来纳米电子学器件的进一步微型化和柔性化提供新的机遇和可能.本文首先回顾了传统铁电研究的相关背景,然后主要介绍二维铁电体研究及其器件应用的最新进展,并简要展望其未来的发展方向.

关键词：二维材料室温铁电性铁电体铁电器件非易失性存储器

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硫与铁共掺杂对二氧化钛光催化性能的影响

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硅酸盐学报 2008年第9期36卷 1272-1276页

作者：魏凤玉曾华灵师彬崔鹏彭书传合肥工业大学化学工程学院合肥230009

采用水热法制得了硫和铁共掺杂的纳米TiO2光催化剂(TiO2–S–Fe)。结果表明:TiO2–S–Fe为金红石和锐钛矿的混晶,具有较高的光催化活性,太阳光照射50min和紫外光照射60min时对甲基橙的降解率分别达99%和97%。TiO2–S–Fe具有较高光催化... 详细信息

采用水热法制得了硫和铁共掺杂的纳米TiO2光催化剂(TiO2–S–Fe)。结果表明:TiO2–S–Fe为金红石和锐钛矿的混晶,具有较高的光催化活性,太阳光照射50min和紫外光照射60min时对甲基橙的降解率分别达99%和97%。TiO2–S–Fe具有较高光催化活性的原因可能是:掺杂的硫取代TiO2中的晶格氧形成Ti—S键,使TiO2的带隙能窄化引起对可见光的响应;同时部分掺杂的硫以S6+形式存在,从而增强了TiO2–S–Fe的表面酸强度,提高了对氧和有机物的吸附;铁掺杂降低了电子和空穴的复合几率。阴阳离子的协同作用提高了TiO2的紫外和可见光催化活性。

关键词：二氧化钛紫外-可见光催化硫铁共掺杂甲基橙

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Comparative Study on Different Methods for Prediction of Thermal Insulation Performance of Thermal Barrier Coating Used on Turbine Blades

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Journal of Thermal Science 2024年第1期33卷 172-189页

作者： ZHANG Zhixin zeng Wu ZHANG Xiaodong zeng Yuntao Advanced Gas Turbine Laboratory Institute of Engineering ThermophysicsChinese Academy of SciencesBeijing 100190China Key Laboratory of Advanced Energy and Power Institute of Engineering ThermophysicsChinese Academy of SciencesBeijing 100190China Innovation Academy for Light-duty Gas Turbine Chinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China

As turbine inlet temperature gets higher and higher,thermal barrier coating(TBC) is more and more widely used in turbine *** turbine blades with TBC,it is of great significance to evaluate the temperature distribution of its substrate metal quickly and accurately,especially during the design *** different degrees of simplification such as whether to consider the change of the geometric size of the fluid domain by TBC and whether to consider the planar heat conduction in TBC,three different methods used in conjugate heat transfer(CHT) simulation to model the TBC of the turbine blades have been developed and widely used by ***,little research has been conducted to investigate the influence of the three methods on the temperature distribution of turbine *** fill this gap,three geometric models were *** are a solid conduction model with a substrate metal layer and a TBC layer,a transonic turbine vane with internal cooling and TBC,and a plate cylindrical film hole cooling model with *** methods were used in these geometric models and their differences were carefully analyzed and *** result shows that for the conduction model used in this paper,with the same TBC surface temperature distribution,the difference between the three methods is very small and can be *** a transonic turbine vane with internal cooling,regarding the local maximum temperature of the substrate-TBC interface,the largest difference between the method in which TBC is considered as a thermal resistance or a virtual layer of cells and the method in which three-dimensional heat conduction equation of TBC is solved occurs at the trailing *** difference near the leading edge is below *** employed to the film cooling model,the difference of the laterally averaged temperature of the substrate-TBC interface can be 8 K which is mainly due to the change of the length to diameter ratio of the film cooling hole by *** the substrate

关键词： turbine blade thermal barrier coating conjugate heat transfer film cooling hole

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Nested Saturated Control of Uncertain Complex Cascade Systems Using Mixed Saturation Levels

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IEEE/CAA Journal of Automatica Sinica 2024年第5期11卷 1163-1174页

作者： Meng Li Zhigang zeng Wuhan National Laboratory for Optoelectronics Wuhan 430074 School of Artificial Intelligence and Automation Huazhong University of Science and TechnologyWuhan 430074China School of Artificial Intelligence and Automation Huazhong University of Science and TechnologyWuhan 430074 Key Laboratory of Image Processing and Intelligent Control of Education Ministry of China Wuhan 430074China

This study addresses the problem of global asymptotic stability for uncertain complex cascade systems composed of multiple integrator systems and non-strict feedforward nonlinear systems. To tackle the complexity inherent in such structures, a novel nested saturated control design is proposed that incorporates both constant saturation levels and state-dependent saturation levels. Specifically, a modified differentiable saturation function is proposed to facilitate the saturation reduction analysis of the uncertain complex cascade systems under the presence of mixed saturation levels. In addition, the design of modified differentiable saturation function will help to construct a hierarchical global convergence strategy to improve the robustness of control design scheme. Through calculation of relevant inequalities, time derivative of boundary surface and simple Lyapunov function,saturation reduction analysis and convergence analysis are carried out, and then a set of explicit parameter conditions are provided to ensure global asymptotic stability in the closed-loop systems. Finally, a simplified system of the mechanical model is presented to validate the effectiveness of the proposed method.

关键词： method saturation differentiable

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Aggregation-regulated bioreduction process of graphene oxide by Shewanella bacteria

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Chinese Journal of Chemical Engineering 2024年第5期69卷 56-62页

作者： Kaixin Han Yibo zeng Yinghua Lu Ping zeng Liang Shen Department of Chemical and Biochemical Engineering College of Chemistry and Chemical EngineeringXiamen UniversityXiamen 361005China Pen-Tung Sah Institute of Micro-Nano Science and Technology Xiamen UniversityXiamen 361005China Chinese Research Academy of Environmental Sciences Beijing 100012China

The bioreduction of graphene oxide(GO)using environmentally functional bacteria such as Shewanella represents a green approach to produce reduced graphene oxide(rGO).This process differs from the chemical reduction that involves instantaneous molecular *** bioreduction,the contact of bacterial cells and GO is considered the rate-limiting *** reveal how the bacteria-GO integration regulates rGO production,the comparative experiments of GO and three Shewanella strains were carried ***-transform infrared spectroscopy,X-ray photoelectron spectroscopy,Raman spectroscopy,and atomic force microscopy were used to characterize the reduction degree and the aggregation *** results showed that a spontaneous aggregation of GO and Shewanella into the condensed entity occurred within 36 h.A positive linear correlation was established,linking three indexes of the aggregation potential,the bacterial reduction ability,and the reduction degree(ID/IG)comprehensively.

关键词： Graphene oxide Reduced graphene oxide Bioreduction Aggregation Shewanella

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