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Rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-hua Wu Hong-Bin Zhao Qing-Zhu Zhang hua-xiang yin Jun Luo Wen-Wu Wang Hai-Ling Tu Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China

In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL) and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-DIBL phenomenon,the drain current(I_(DS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(DD)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates

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Chinese Physics Letters 2017年第9期34卷 95-99页

作者： Zhao-Zhao Hou Gui-Lei Wang Jin-Juan xiang Jia-Xin Yao Zhen-hua Wu Qing-Zhu Zhang hua-xiang yin Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029 University of Chinese Academy of Sciences Beijing 100049

A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.

关键词： Dielectrics and SiGe Epitaxial Substrates Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

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Chinese Physics Letters 2018年第5期35卷 110-114页

作者： Zhao-Zhao Hou Gui-Lei Wang Jia-Xin Yao Qing-Zhu Zhang hua-xiang yin Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 University of Chinese Academy of Sciences Beijing 100049

We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.

关键词： FB Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

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Chinese Physics B 2017年第2期26卷 461-466页

作者： Xue-Li Ma Hong Yang Jin-Juan xiang Xiao-Lei Wang Wen-Wu Wang Jian-Qi Zhang hua-xiang yin, Hui-Long Zhu Chao Zhao Integrated Circuit Advanced Process R ＆ D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China National Center for Nanoscience and Technology Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China

In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.

关键词： Al-doped HfO2 ultrathin film phase transition thermodynamics kinetics

CO_2, H_2O exchange and stomatal regulation of regenerated Camptotheca acuminata plantlets during ex vitro acclimatization

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Journal of Forestry Research 2006年第4期17卷 273-276页

作者： WANG Hui-mei LI Yan-hua GAO yin-xiang ZU Yuan-gang Key Laboratory of Forest Plant Ecology the Ministry of Education Northeast Forestry University Harbin 150040 P. R. China

For finding the changes in CO2, H20 exchange and their stomatal regulation during ex vitro acclimatization of regenerated Camptotheca acuminata plantlets, the net photosynthesis rate （Pn）, respiration rate （Ro）, light compensation point （Lc） and light saturation point （Ls）, transpiration rate （Tr）, stomatal conductance （gs） and water use efficiency（WUE） were measured during 37 days of ex vitro acclimatization. The results showed that Pn sharply increased until 29 days, then slightly decreased. A substantial decrease in Lc and a substantial increase of Ls in the former two weeks were observed, indicating the light regime enlargement for effective leaf photosynthesis. Tr and gs abruptly decreased during the first week then linearly increased until 29days ex vitro acclimatization, reflecting the strong regulation effect of stomata on water changes of ex vitro acclimating plantlets. Stomatal regulation effect on CO2 exchange was different from that on water exchange, i.e. P, was almost independent of gs during the first week, while P. was significantly correlated with gs thereafter （i.e. dual patterns）. Different from dual patterns of gs-Pn relation, the Tr monotonously linearly increased with gs. Furthermore, WUE was almost independent on gs during the first week, while a marked decreasing tendency with gs was found thereafter. At the beginning of the acclimatization, WUE was mainly determined by photosynthetic capacity, while transpiration becomes a main determinant factor for WUE from 7 to 37 days＇ acclimatization.

关键词： Camptotheca acuminate Acclimatization Photosynthesis Transpiration Water use efficiency Relation between stomatal conductance (gs) and net photosynthesis rate (Pn) gs-WUE relation

Electrochemically recycling degraded superalloy and valorizing CO_(2)in the aff ordable borate-modified molten electrolyte

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Tungsten 2024年第2期6卷 382-393页

作者： xiang Chen Yuan Sun Long Wang Xin Qu Yan Zhao Hong-Wei Xie Di-hua Wang hua-Yi yin Key Laboratory for Ecological Metallurgy of Multimetallic Mineral of Ministry of Education School of MetallurgyNortheastern UniversityShenyang 110819China Institute of Metal Research Chinese Academy of ScienceShenyang 110016China School of Resource and Environmental Science Wuhan UniversityWuhan 430072China

Integrating electrochemical reduction of CO_(2)and electrochemical oxidation to recycle degraded superalloys is a promising solution to ease resource scarcity and safeguard environmental ***,we propose an electrochemical technique for the conversion of bulk superalloy scraps and CO_(2)into oxide powder at the anode and solid carbon at the cathode,*** particular,a borax-modifi ed CaCl_(2)-based molten salt electrolyte is used for enhancing the electrochemical oxidation of superalloy *** a temperature of 700℃and a voltage of 2.8 V,90.55 wt.%of alloy scraps were oxidized in a molten CaCl_(2)–NaCl–CaCO_(3)–Na_(2)B_(4)O_(7)with an acid–base ratio(K_(a/b))of *** synergy of Cl−and B_(4)O_(7)2−of electrolyte prevents the passivation of the alloy anode and enables continuous ***,the Ni and Co in the anode products are recovered by sulfation roasting with recovery efficiencies of 85.58%and 95.27%for Ni and Co,***,modulating the alkalinity of the electrolyte for enhancing oxidation/pulverization of alloy scrap anode provides new insight into electrochemically recovering superalloy scraps.

关键词： Superalloy scraps Recycling Molten salt Alkalinity Electrochemical oxidation Cobalt

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

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Chinese Physics B 2022年第1期31卷 529-534页

作者： Ren-Ren Xu Qing-Zhu Zhang Long-Da Zhou Hong Yang Tian-Yang Gai hua-xiang yin Wen-Wu Wang Integrated Circuit Advanced Process Center(ICAC) Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is *** is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn ***,the channel length dependence on NBTI is more serious than that on *** the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is *** extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for *** mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.

关键词： bias temperature instability(BTI) channel length stress FinFET

Origin of the Dashuigou independent tellurium deposit at Qinghai–Xizang Plateau: constraints from the light stable isotopes C, O, and H

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Acta Geochimica 2024年第2期43卷 385-398页

作者： Jianzhao yin Yuhong Chao Haoyu yin Hongyun Shi Shoupu xiang Wuhan Institute of Technology Wuhan 430074China College of Earth Sciences Jilin UniversityChangchun 130061China Ganzhongnan Institute of Geology and Mineral Exploration Nanchang 330002China Guinea Westfi eld Mining Company-Sarlu Jinzhong 031300China Orient Resources Ltd. RichmondB.C.V7E 1M8Canada Silvercorp Metals Inc. Beijing 100027China

By studying the light isotopic compositions of carbon,oxygen,and hydrogen,combined with previous research results on the ore-forming source of the deposit,the authors try to uncover its metallogenic *** δ^(18)O and δ^(13)C isotope signatures of dolomite samples vary between 10.2 and 13.0‰,and between−7.2 and−5.2‰,respectively,implying that the carbon derives from the upper mantle.δD and δ^(18) O of quartz,biotite,and muscovite from diff erent ore veins of the deposit vary between−82 and−59‰,and between 11.6 and 12.4‰,respectively,implying that the metallogenic solutions are mainly *** to the relevant research results of many isotope geologists,the fractionation degree of hydrogen isotopes increases as the depth to the Earth’s core increases,and the more diff erentiated the hydrogen isotopes are,the lower their values will *** other words,mantle-derived solutions can have extremely low hydrogen isotope *** means that the δD‰ value−134 of the pyrrhotite sample numbered SD-34 in this article may indicate mantle-derived oreforming fl uid of the *** formation of the Dashuigou tellurium deposit occurred between 91.71 and 80.19 Ma.

关键词： Carbon oxygen and hydrogen isotopes Origin Independent tellurium deposit The Qinghai–Xizang Plateau

Alkylene-functionality in bridged and fused nitrogen-rich poly-cyclic energetic materials:Synthesis,structural diversity and energetic properties

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Defence Technology（防务技术） 2024年第5期35卷 18-46页

作者： Man Xu Nanxi xiang Ping yin Qi Lai Siping Pang School of Materials Science&Engineering Beijing Institute of TechnologyBeijing 100081China Beijing Institute of Technology Chongqing Innovation Center Chongqing 401120China

From the standpoint of chemical structures,the organic backbones of energetic materials can be classified into aromatic rings,nonaromatic rings,and open *** the category of aromatic energetic compounds exhibits several advantages in the regulation of energetic properties,the nonaromatic heterocycles,assembling nitramino explosophores with simple alkyl bridges,still have prevailed in benchmark *** methylene bridge plays a pivotal role in the constructions of the classic nonaromatic heterocycle-based energetic compounds,e.g.,hexahydro-1,3,5-trinitro-1,3,5-triazine(RDX)and octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine(HMX),whereas ethylene bridge is the core moiety of state-of-the-art explosive 2,4,6,8,10,12-hexanitro-2,4,6,8,10,12-hexaazaisowurtzitane(CL-20).In this context,it is of great interest to employ simple and practical bridges to assemble aromatic and nonaromatic nitrogen-rich heterocycles,thereby expanding the structural diversity of energetic materials,e.g.,bridged and fused nitrogen-rich ***,alkyl-bridged poly-heterocycles highlight the potential for the open chain type of energetic *** this review,the development of alkyl bridges in linking nitrogen-rich heterocycles is presented,and the perspective of the newly constructed energetic backbones is summarized for the future design of advanced energetic materials.

关键词： Energetic materials Alkyl bridge strategy Nitrogen-rich azoles Fused heterocycles Azoles

Moyamoya syndrome may result from psoriasis: Four case reports

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World Journal of Clinical Cases 2024年第10期12卷 1830-1836页

作者： Zhi-ying Chen Xiao-Qin Yu Yuan-Yuan xiang Ling-hua Liu Xiao-Ping yin Department of Neurology The Affiliated Hospital of Jiujiang UniversityJiujiang 332000Jiangxi ProvinceChina Department of Dermatology The Affiliated Hospital of Jiujiang UniversityJiujiang 332000Jiangxi ProvinceChina

BACKGROUND Moyamoya syndrome(MMS)is a group of diseases that involves more than one underlying disease and is accompanied by moyamoya vascular *** is a chronic immune skin disease closely linked to high blood pressure and heart ***,psoriasis-related MMS has not been *** SUMMARY We collected data on patients with stroke due to MMS between January 2017 and December 2019 and identified four cases of *** histories,imaging,and hematological data were *** average age of the initial stroke onset was 58.25±11.52 years;three cases of hemorrhagic and one case of ischemic stroke were *** average duration from psoriasis confirmation to the initial MMS-mediated stroke onset was 17±3.56 *** MMS-related stenoses involved the bilateral cerebral arteries:Suzuki grade III in one case,grade IV in two cases,and grade V in one *** elevated plasma interleukin-6 levels were observed in four *** patients had abnormally elevated immunoglobulin E levels,and two had *** four patients received medication instead of *** an average follow-up time of 2 years,two causing transient ischemic attacks occurred in two patients,and no hemorrhagic events *** Psoriasis may be a potential risk factor for *** with psoriasis should be screened for MMS when they present with neurological symptoms.

关键词： Moyamoya syndrome Psoriasis Stroke Interleukin-6 Immune Hypertension Case report