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Digital Pulse Width Modulation Control in Power Electronic Circuits Design

Journal of Power and Energy Engineering 2020年第4期8卷 1-10页

作者： hsu myat tin swe Hla Myo Tun Maung Maung Latt Department of Electronic Engineering Yangon Technological University Yangon Myanmar Department of Electronic Engineering Technological University (Taungoo) Taungoo Myanmar

The paper mainly focuses on the digital pulse width modulation (DPWM) control techniques for high performance power electronic circuit design. The problem to be solved in this study addresses the DPWM converter design for DC to DC conversion process. The control techniques have been utilized the Fuzzy Logic Rules Base method for proposed SIMULINK model of high performance power electronic circuit. The analytical calculations for real circuit design have been completed based on the mathematical modeling of the system. The results from the developed SIMULINK model confirm the target specifications of the high performance condition for power electronic circuit which was met the objective of this study. The numerical results have been carried out with the help of MATLAB/SIMULINK.

关键词： Digital Pulse Width Modulation Power Electronics Analytical Modeling Mathematical Modeling SIMULINK Model MATLAB

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Computerized FDTD Method for Longitudinal Optical Phonon Energy on Semiconductor Hybrid Structure for High Power Devices Fabrication

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Journal of Computer Science Research 2021年第2期3卷 39-51页

作者： Phyo Sandar Win hsu myat tin swe Hla Myo Tun Department of Electronic Engineering Technological University(Taungoo)BagoMyanmar Faculty of Electrical and Computer Engineering Yangon Technological UniversityYangonMyanmar

The research problem in this study is the longitudinal optical phonon energy on metal/semiconductor interface for high performance semiconductor *** research solution is to make the software model with finite difference time domain(FDTD)solution for transmission and reflection pulse between metal and semiconductor interface for carrier dynamics *** objective of this study is to find the quantum mechanics understanding on interface engineering for fabricating the high performance device for future semiconductor technology *** analysis was carried out with the help of *** quantum mechanical spatial field on metal-semiconductor stripe structure has been analyzed by FDTD *** emission reveals a characteristic polar radiation distribution of electric dipoles and a wavelength independent of the structure size or the direction of emission;consequently,it is attributed to thermally generate electric dipoles resonating with the longitudinal optical phonon *** energy occurs lattice vibration of material by the polarization of light,if the material has rigid structure reflect back the incident ***,high reflective metal-semiconductor structure always use as photodectors devices in optical fiber *** lattice vibration material structure has no phonon effect,so this structure based devices can get high performance any other structure based *** transmission and reflection coefficient of metal-semiconductor GaN/Au layer structure compare with GaN/Ti and GaN/Pt ***(P)and transverse(S)polarization of light incident on a metal-semiconductor nanolayer structure with IR *** use of the layer by layer(LbL)method to fabricate nanofilms requires meeting certain conditions and limitations that were revealed in the course of research on model systems.

关键词： FDTD Semiconductor structure Computer simulation Computer programming MATLAB

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