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Chemical Research in Chinese Universities 2006年第4期22卷 459-464页

作者： ZHAI Xin ZHAO Yan-fang WANG Jia hong wei HUANG liang GONG Ping School of Pharmaceutical Engineering Shenyang Pharmaceutical University Shenyang 110016 P. R. China

Sixteen novel oxazolidinone analogs containing substituted thiazole/fused-bicyclic（imidazo[ 1,2-b] pyridazine/ imidazo[2,1-b] thiazole） groups were designed and synthesized. A new method for the preparation of the key intermediate compound 11 was proposed. The structures of the target compounds were confirmed by ^1H NMR, IR and MS, and their in vitro antibacterial activities against staphylococcus aureus were evaluated. Among them, compound 16a displays a promising antibacterial activity comparable to that of linezolid.

关键词： Oxazolidinone analog Synthesis Antibacterial activity

Overexpression of decoy receptor 3 in hepatocellular carcinoma and its association with resistance to Fas ligand-mediated apoptosis

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World Journal of Gastroenterology 2005年第38期11卷 5926-5930页

作者： hong-wei Shen Shun-liang Gao Yu-Lian Wu Shu-You Peng Department of Surgery 2^nd Affiliated Hospital of Medical CollegeZhejiang University Hangzhou 310009 Zhejiang Province China

AIM： To characterize the expression and genomic amplification of decoy receptor 3 （DcR3） in hepatocellular carcinoma （HCC） and to evaluate the role of DcR3 in apoptosis.METHODS： We examined 48 cases of HCC for DcR3 expression by RT-PCR and DcR3 gene amplification by quantitative genomic PCR. DcR3 protein was detected by immunohistochemistry. Terminal deoxynucleotidyl transferase-mediated dUTP digoxigenin nick and labeling （TUNEL） was used to identify the apoptosis cells in tissues. Primary hepatoma cell culture and MTT test were used to evaluate the protection against FasL- and chemicalinduced apoptosis by DcR3 expression. RESULTS： DcR3 mRNA overexpression was detected in 60% HCC （29/48） patients. The occurrence of HCC was not associated with amplification of the gene. One sample base substitution was found in three sites as a sequence in Genbank. The expression of DcR3 in HCC was associated with the apoptotic index （0.067±0.04 vs 0.209±0.12, P〈0. 01）, size of mass, stage, and infiltration or metastasis （41.2% vs71.0%, 40% vs75%, 51.8% vs84.6%, P〈0. 05）. DcR3 expression could protect hepatoma cells against apoptosis induced by FasL, but not by chemicals. CONCLUSION： These data suggest that in addition to gene amplification there may be another mechanism underlying DcR3 overexpression. The effect of overexpression of DcR3 on the apoptosis of cancer cells may have direct therapeutic implications for the management of HCC.

关键词： DcR3 Hepatocellular carcinoma Apoptosis

Lower Semicontinuity of the Solution Sets to Parametric Generalized Vector Equilibrium Problems

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Journal of Mathematical Research and Exposition 2011年第3期31卷 411-419页

作者： Jing Zhe LI hong wei liang Dan ZHAO College of Mathematics and Statistics Chongqing University Chongqing 401331 P. R. China

In this paper,by a scalarization method,the lower semicontinuity of the solution mappings to two kinds of parametric generalized vector equilibrium problems involving set-valued mappings is established under new assumptions which are weaker than the C-strict *** results extend the corresponding *** examples are given to illustrate our results.

关键词： parametric generalized vector equilibrium problems lower semicontinuity scalarization.

Triangle singularity enhancing isospin violation in B^0_s→ J/ψπ~0f_0(980)

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Chinese Physics C 2018年第4期42卷 157-165页

作者： wei-hong liang S. Sakai Ju-Jun Xie E. Oset Department of Physics Guangxi Normal University Guilin 541004 China Departamento de Física Teórica and IFIC Centro Mixto Universidad de Valencia-CSIC Institutos de Investigación de Paterna Aptdo. 22085 46071 Valencia Spain Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China

We perform calculations for the Bs0→ J/ψπ0f0（980） and Bs0 → J/ψπ0a0（980） reactions, showing that the first is isospin-suppressed while the second is isospin-allowed. The reaction proceeds via a triangle mechanism, with Bs0 →J/ψK＊ K ＋c.c., followed by the decay K＊ →Kπ and a further fusion of KK into the f0（980） or a0（980）. We show that the mechanism develops a singularity around the π0 f0（980） or π0a0（980） invariant mass of 1420 MeV, where the π0f0 and π0a0 decay modes are magnified and also the ratio of π0f0 to π0a0 production. Using experimental information for the Bs0 → J/ψK＊K ＋c.c. decay, we are able to obtain absolute values for the reactions studied which fall into the experimentally accessible range. The reactions proposed and the observables evaluated, when contrasted with actual experiments, should be very valuable to obtain information on the nature of the low lying scalar mesons.

关键词： triangle singularity light scalar meson isospin violation bottom meson decay

Room temperature non-balanced electric bridge ethanol gas sensor based on a single ZnO microwire

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Chinese Physics B 2020年第1期29卷 463-468页

作者： Yun-Zheng Li Qiu-Ju Feng Bo Shi Chong Gao De-Yu Wang hong-wei liang School of Physics and Electronic Technology Liaoning Normal UniversityDalian 116029China School of Microelectronics Dalian University of TechnologyDalian 116024China

In this paper,ultra-long and large-scaled ZnO microwire arrays are grown by the chemical vapor deposition method,and a single ZnO microwire-based non-balanced electric bridge ethanol gas sensor is *** experimental results show that the gas sensor has good repeatability,high response rate,short response,and recovery time at room temperature(25℃).The response rate of the gas sensor exposed to 90-ppm ethanol is about 93%,with a response time and recovery time are 0.3 s and 0.7 s *** a contrast,the traditional resistive gas sensor of a single ZnO microwire shows very small gas response ***,ethanol gas sensor based on non-balanced electric bridge can obviously enhance gas sensing characteristics,which provides a feasible method of developing the high performance ZnO-based gas sensor.

关键词： ZnO microwire gas sensor room temperature ethanol

Effects of presenilins and β-amyloid precursor protein on delayed rectifier potassium channels in cultured rat hippocampal neurons

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Acta Pharmacologica Sinica 2004年第2期25卷 55-59页

作者： wei ZHANG, hong-wei JIN, Xiao-liang WANG2 Department of Pharmacology, Institute of Materia Medica, Peking Union Medical College and Chinese Academy of Medical Science, Beijing 100050, China Department of Pharmacology Institute of Materia Medica Peking Union Medical College and Chinese Academy of Medical Science 北京 100050

AIM: To study the effects of presenilin-1 (PS-1), presenilin-2 (PS-2), and amyloid beta-protein precursor (APP695) on delayed rectifier potassium channels (IK) in the cultured rat hippocampal neurons. METHODS: PS-1, PS-2, and APP695 were transfected into the cultured rat hippocampal neurons by transient transfection techniques. The IK current was observed by the whole cell patch-clamp techniques. RESULTS: IK was increased in cultured rat hippocampal neurons, after transient transfection of PS-1, PS-2, and APP695. IK amplitudes and densities were significantly increased from (1689±412) pA, (48±18) pA/pF (mock cells, GFP alone, n=17) to (5565±1403) pA, (252±107) pA/pF (PS-1/GFP, n=22, P0.05). CONCLUSION: Overexpression of PS-1, PS-2, and APP695 increased IK in the cultured rat hippocampal neurons. The upregulation of IK may be related to neuronal apoptosis after PS-1, PS-2, and APP695 were transfected.

关键词： presenilin-1 presenilin-2 amyloid beta-protein precursor potassium channels transfection patch- clamp techniques

Influence of Bath Composition on Magnetic Properties of Electrodeposited Co-Pt-W Thin Films

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Journal of Iron and Steel Research International 2007年第4期14卷 65-68页

作者： GE hong-liang wei Guo-ying WU Qiong ZHOU Qiao-ying WANG Xin-yan College of Material Science and Engineering China Jiliang University Hangzhou 310018 Zhejiang China

Effect of bath composition （[Co^2＋]/[-Pt^Ⅳ ] and [-WO4^2- ], [cit^-]） and pH on the magnetic properties of electrodeposited Co-Pt-W thin films has been investigated. Electrodeposited Co-Pt-W thin films exhibited strong perpendicular magnetic anisotropy when the ratio of [-Co^2＋ ] to [-Pt^Ⅳ ] was 10 ; cathode current efficiency and perpendicular magnetic anisotropy showed little variations when [WO4^2- ] was lower than 0. 1 mol/L, but perpendicular magnetic anisotropy had strengthened when [WO4^2-] was over 0. 1 mol/L, which could be explained by the fact that the hydrogen evolution could produce pores as magnetic domain pinnings; citrate as complexing reagent can promote the polarization of [Co^2＋] and [Pt^Ⅳ]. As a result, the equilibrium electrode potentials of cobalt and platinum moved to negative direction, which led to the co-deposition of Co, Pt, and W. It was also found out that the as-deposited Co- Pt-W hard magnetic thin films were very homogeneous, smooth, and had the maximum coercivity for the bath pH 8. 5 and the concentration of citrate 0. 26 mol/L.

关键词： electrodeposition Co-Pt-W thin film magnetic property bath composition

Effect of Au/Ni/4H–SiC Schottky junction thermal stability on performance of alpha particle detection

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Chinese Physics B 2018年第8期27卷 482-486页

作者： Xin Ye Xiao-Chuan Xia hong-wei liang Zhuo Li He-Qiu Zhang Guo-Tong Du Xing-Zhu Cui Xiao-Hua liang School of Microelectronics Dalian University of TechnologyDalian 116024China School of Physics Dalian University of TechnologyDalian 116024China Institute of High Energy Physics Chinese Academy of Sciences（CAS）Beijing 100049China State Key Laboratory of Particle Detection and Electronics Institute of High Energy PhysicsChinese Academy of Sciences Beljing 100049China

Au/Ni/n-type 4H-SiC Schottky alpha particle detectors are fabricated and annealed at temperatures between 400℃ and 700 ℃ to investigate the effects of thermal stability of the Schottky contact on the structural and electrical properties of the detectors. At the annealing temperature of 500 ℃, the two nickel silicides （i.e., Ni31Sil2 and Ni2Si） are formed at the interface and result in the formation of an inhomogeneous Schottky barrier. By increasing the annealing temperature, the Ni31Sil2 transforms into the more stable Ni2Si. The structural evolution of the Schottky contact directly affects the electrical properties and alpha particle energy resolutions of the detectors. A better energy resolution of 2.60% is obtained for 5.48-MeV alpha particles with the detector after being annealed at 600 ℃. As a result, the Au/Ni/n-type 4H-SiC Schottky detector shows a good performance after thermal treatment at temperatures up to 700℃.

关键词： alpha particle detector silicon carbide thermal stability Schottky barrier

Simulation of GaN micro-structured neutron detectors for improving electrical properties

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Chinese Physics B 2020年第2期29卷 414-419页

作者： Xin-Lei Geng Xiao-Chuan Xia Huo-Lin Huang Zhong-Hao Sun He-Qiu Zhang Xing-Zhu Cui Xiao-Hua liang hong-wei liang School of Microelectronics Dalian University of TechnologyDalian 116024China School of Optoelectronic Engineering and Instrumentation Science Dalian University of TechnologyDalian 116024China Institute of High Energy Physics Chinese Academy of Sciences(CAS)Beijing 100049China

Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging *** this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench *** the other hand,the electron blocking region is formed in the detector enveloped with a dielectric ***,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main *** can be realized that all these methods can considerably enhance the working voltage as well as *** them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-***,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional *** work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.

关键词： GaN micro-structured neutron detector depletion region electric field

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

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Chinese Physics Letters 2017年第9期34卷 82-86页

作者： Zhi-Fu Zhu He-Qiu Zhang hong-wei liang Xin-Cun Peng Ji-Jun Zou Bin Tang Guo-Tong Du School of Physics Dalian University of Technology Dalian 116024 Engineering Research Center of Nuclear Technology Application (Ministry of Education) East China Institute of Technology Nanchang 330013 Jiangxi Province Engineering Research Center of New Energy Technology and Equipment (Ministry of Education) East China Institute of Technology Nanchang 330013 School of Microelectronics Dalian University of Technology Dalian 116024 State Key Laboratory on Integrated Optoelectronics School of Electronic Science and Engineering Jilin University Changchun 130012

For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.

关键词： GaN Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements Ni