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Low-power emerging memristive designs towards secure hardware systems for applications in internet of things

Nano Materials Science 2021年第2期3卷 186-204页

作者： Nan Du heidemarie schmidt Ilia Polian Department Nano Device Technology Fraunhofer Institute for Electronic Nano SystemsTechnologie-Campus 309126ChemnitzGermany Faculty of Electrical Engineering and Information Technology Chemnitz University of Technology(TU Chemnitz)Straße der Nationen 6209126ChemnitzGermany Department of Quantum Detection Leibniz Institute of Photonic Technology(IPHT)Albert-Einstein-Str.907745JenaGermany Institute for Solid State Physics Friedrich Schiller University JenaFürstengraben 107743JenaGermany Institute of Computer Engineering and Computer Architecture(ITI) University of StuttgartPfaffenwaldring 4770569StuttgartGermany

Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security applications in the era of internet of things(IoT).In this review article,for achieving secure hardware systems in IoT,lowpower design techniques based on emerging memristive technology for hardware security primitives/systems are *** reviewing the state-of-the-art in three highlighted memristive application areas,*** non-volatile memory,memristive reconfigurable logic computing and memristive artificial intelligent computing,their application-level impacts on the novel implementations of secret key generation,crypto functions and machine learning attacks are explored,*** the low-power security applications in IoT,it is essential to understand how to best realize cryptographic circuitry using memristive circuitries,and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their *** review article aims to help researchers to explore security solutions,to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.

关键词： Memristive technology Nanoelectronic device Low-power consumption Miniaturization Nonvolatility Reconfigurability In memory computing Artificial intelligence Hardware security primitives Machine learning-related attacks and defenses

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Local Tuning of the Surface Potential in Silicon Carriers by Ion Beam Induced Intrinsic Defects

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Advances in Materials Physics and Chemistry 2022年第11期12卷 289-305页

作者： Daniel Blaschke Lars Rebohle Ilona Skorupa heidemarie schmidt Leibniz Institute of Photonic Technology Jena Germany Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials Research Dresden Germany Friedrich Schiller University Jena Institute for Solid State Physics Jena Germany

The immobilization of biomaterials on a carrier is the first step for many different applications in life science and medicine. The usage of surface-near electrostatic forces is one possible approach to guide the charged biomaterials to a specific location on the carrier. In this study, we investigate the effect of intrinsic defects on the surface potential of silicon carriers in the dark and under illumination by means of Kelvin probe force microscopy. The intrinsic defects were introduced into the carrier by local, stripe-patterned ion implantation of silicon ions with a fluence of 3 × 1013 Si ions/cm2 and 3 × 1015 Si ions/cm2 into a p-type silicon wafer with a dopant concentration of 9 × 1015 B/cm3. The patterned implantation allows a direct comparison between the surface potential of the silicon host against the surface potential of implanted stripes. The depth of the implanted silicon ions in the target and the concentration of displaced silicon atoms was simulated using the Stopping and Range of Ions in Matter (SRIM) software. The low fluence implantation shows a negligible effect on the measured Kelvin bias in the dark, whereas the large fluence implantation leads to an increased Kelvin bias, i.e. to a smaller surface work function according to the contact potential difference model. Illumination causes a reduced surface band bending and surface potential in the non-implanted regions. The change of the Kelvin bias in the implanted regions under illumination provides insight into the mobility and lifetime of photo-generated electron-hole pairs. Finally, the effect of annealing on the intrinsic defect density is discussed and compared with atomic force microscopy measurements on the 2nd harmonic. In addition, by using the Baumgart, Helm, schmidt interpretation of the measured Kelvin bias, the dopant concentration after implantation is estimated.

关键词： Kelvin Probe Force Microscopy Surface Potential Intrinsic Defects Silicon Ion Implantation

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