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Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs

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Journal of Semiconductors 2012年第12期33卷 27-30页

作者：靳晓诗刘溪吴美乐揣荣岩 jung-hee lee Jong-Ho lee School of Information Science and Engineering Shenyang University of Technology School of EECS Kyungpook National University School of EECS Eng.and ISRC(Inter-University Semiconductor Research Center) Seoul National University

A model of subthreshold characteristics for both undoped and doped double-gate （DG） MOSFETs has been proposed. The models were developed based on solution of 2-D Poisson＇s equation using variable separa- tion technique. Without any fitting parameters, our proposed models can exactly reflect the degraded subthreshold characteristics due to nanoscale channel length. Also, design parameters such as body thickness, gate oxide thick- ness and body doping concentrations can be directly reflected from our models. The models have been verified by comparing with device simulations＇ results and found very good agreement.

关键词： double-gate MOSFETs deep nanoscale modeling

Trap and 1/f-noise effects at the surface and core of GaN nanowire gateall-around FET structure

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Nano Research 2019年第4期12卷 809-814页

作者： Mallem Siva Pratap Reddy Ki-Sik Im jung-hee lee Raphael Caulmione Sorin Cristoloveanu School of Electronics Engineering Kyungpook National University Daegu 41566 Republic of Korea Advanced Material Research Center Kumoh National Institute of Technology Gumi 39177 Republic of Korea SOITEC Bernin 38190 France Institute of Microelectronics Electromagnetism and Photonics Grenoble Polytechnic Institute Minatec Grenoble 38016 France

Using capacitance,conductance and noise measurements,we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1 D) array of GaN nanowire gate-all-around field effect transistor (GAA FET),fabricated via a top-down *** surface traps in such a low dimensional device play a crucial role in determining the device *** estimated surface trap density rapidly decreases with increasing frequency,ranging from 6.07 × 1012 cm-2·eV-1 at 1 kHz to 1.90 × 1011 cm-2·eV-1 at 1 MHz,*** noise results reveal that the power spectral density increases with gate voltage and clearly exhibits 1/f-noise signature in the accumulation region (Vgs > Vth =3.4 V) for all *** the surface depletion region (1.5 V < Vgs < Vth),the device is governed by 1/fat lower frequencies and 1/f2 noise at frequencies higher than ~ 5 *** 1/f2 noise characteristics is attributed to additional generation-recombination (G-R),mostly caused by the electron trapping/detrapping process through deep traps located in the surface depletion region of the *** cutoff frequency for the 1/f2 noise characteristics further shifts to lower frequency of 102-103 Hz when the device operates in deep-subthreshold region (Vgs < 1.5 V).In this regime,the electron trapping/detrapping process through deep traps expands into the totally depleted nanowire core and the G-R noise prevails in the entire nanowire channel.

关键词： gate-all-around field effect transistor (FET) nanowire GaN trap 1/f-noise

Generation and measurement of arbitrary four-dimensional spatial entanglement between photons in multicore fibers

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Photonics Research 2019年第1期7卷 19-27页

作者： hee jung lee hee SU PARK Korea Research Institute of Standards and Science(KRISS) Agency for Defense Development

High-dimensional entanglement is a valuable resource for secure and efficient quantum information processing.A major challenge for practical use of multidimensional quantum systems is the establishment of controls over arbitrary superposition states in realistic conditions. This work demonstrates spatially entangled photon pairs propagating through two separate four-core optical fibers with the amplitudes and phases of the superposition being independently controllable. Using quantum state analyzers that can detect arbitrary multicore superposition states, Bell-type CGLMP inequalities in two, three, and four dimensions are directly tested. Enhanced violation of the inequality by slight nonmaximality of entanglement is also demonstrated.

关键词： High-dimensional entanglement efficient quantum demonstrates spatially

Development of a Specific CHIKV-E2 Monoclonal Antibody for Chikungunya Diagnosis

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Virologica Sinica 2019年第5期34卷 563-571页

作者： Jaemoo Kim Jihyun Yang Young Bong Kim hee-jung lee Sehyun Kim Haryoung Poo Infectious Disease Research Center Korea Research Institute of Bioscience and BiotechnologyDaejeon 34141Republic of Korea Department of Biosystems and Bioengineering University of Science and TechnologyDaejeon 34113Republic of Korea Department of Biomedical Science and Engineering Konkuk UniversitySeoul 05029Republic of Korea Department of Bio-Industrial Technologies Konkuk UniversitySeoul 05029Republic of Korea

Chikungunya fever is a vector-borne viral disease transmitted to humans by chikungunya virus(CHIKV)-infected *** have been many outbreaks of CHIKV infection worldwide,and the virus poses ongoing risks to global *** prevent and control CHIKV infection,it is important to improve the current CHIKV diagnostic approaches to allow for the detection of low CHIKV concentrations and to correctly distinguish CHIKV infections from those due to other mosquito-transmitted viruses,including dengue virus(DENV),Japanese encephalitis virus(JEV),and Zika virus(ZIKV).Here,we produced monoclonal antibodies(mAbs)against the CHIKV envelope 2 protein(CHIKV-E2)and compared their sensitivity and specificity with commercially available mAbs using enzyme-linked immunosorbent assays(ELISA).Two anti-CHIKV-E2 mAbs,19-1 and 21-1,showed higher binding affinities to CHIKV-E2 protein than the commercial mAbs *** particular,the 19-1 mAb had the strongest binding affinity to inactivated ***,the 19-1 mAb had very little cross-reactivity with other mosquito-borne viruses,such as ZIKV,JEV,and *** results suggest that the newly produced anti-CHIKV-E2 mAb,19-1,could he used for CHIKV diagnostic approaches.

关键词： Chikungunya virus(CHIKV) Envelope 2 Monoclonal antibody Diagnosis• Sensitivity Specificity

Effects of Salvia miltiorrhiza Bunge extract and its single components on monosodium urate-induced pain in vivo and lipopolysaccharide-induced inflammation in vitro

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Journal of Traditional Chinese Medicine 2021年第2期41卷 219-226页

作者： FENG Jinghui Set Byeol Kim hee jung lee Su Min Sim Soon Sung Lim Hong Won Suh Department of Pharmacology College of MedicineHallym UniversityChuncheon 200-702South Korea Department of Food Sciences and Nutrition College of NaturalHealthand Life SciencesHallym UniversityChuncheon 200-702Republic of

OBJECTIVE:To investigate the possible antinociceptive effects of Salvia(S.)miltiorrhiza Bunge and its single components in monosodium urate(MSU)-induced pain model in mice and lipopolysaccharide(LPS)-induced inflammation model in RAW264.7 ***:Pretreatment of *** Bunge extract(from 1 to 50μg/mL)concentration-dependently attenuated LPS-induced nitric oxide(NO)*** extract of *** Bunge(50 or 100 mg/kg)also caused reversals of decreased threshold for pain in the MSU-treated group as measured by Von-Frey ***,we assessed the antinociceptive and anti-inflammatory properties of the active single components from *** Bunge such as 15,16-dihydrotanshinoneⅠ,tanshinoneⅠ,cryptotanshinone,miltirone,tanshinoneⅡA,and salvianolic acid *** of them showed an anti-inflammatory effect in LPS-induced NO release model and an antinociceptive effect in MSU-treated pain ***:Our results suggest that *** Bunge extract may exert anti-inflammatory effect by reducing LPS-induced NO release and an antinociceptive property in MSU-treated pain ***,tanshinoneⅡA,miltirone,cryptotanshinone,and 15,16-dihydrotanshinoneⅠ,not only appear to be responsible for LPS-induced NO release induced by *** Bunge,but also in the production of *** Bunge extract-induced antinociception in MSU-treated pain ***:Therefore,the analgesic and anti-inflammatory property of *** Bunge indicate it as a therapeutic potential candidate for the treatment of pain and inflammation.

关键词： Salvia miltiorrhiza lipopolysaccharides nitric oxide inflammation analgesics

High efficiency and stable solid-state fiber dye-sensitized solar cells obtained using TiO_(2) photoanodes enhanced with metal organic frameworks

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Journal of Energy Chemistry 2022年第4期31卷 458-466页

作者： Jae Ho Kim Hyun Woo Park Sung-Jun Koo Daseul lee Eunyeong Cho Yong-Ki Kim Myunghun Shin Jin Woo Choi hee jung lee Myungkwan Song Department of Energy and Electronic Material Korea Institute of Materials Science(KIMS)797 Changwon-daeroSungsan-guChangwonGyeongsangnam-do 51508Republic of Korea Composites Research Division Korea Institute of Materials Science(KIMS)797 Changwon-daeroSungsan-GuChangwonGyeongsangnam-do 51508Republic of Korea School of Electronics and Information Engineering Korea Aerospace UniversityGoyang-cityGyeonggi-do 10540Republic of Korea

Solid-state fiber dye-sensitized solar cells(SS-FDSSCs) have been the subject of intensive attention and development in recent years. Although this field is only in its infancy, metal–organic frameworks(MOFs) are one such material that has been utilized to further improve the power conversion efficiency of solar cells. In this study, MOF-integrated DSSCs were shown to have potential in the development of solar cell devices with efficiency comparable to or better than that of conventional solar cells. The power conversion efficiency(PCE) of SS-FDSSCs was improved by embedding MOF-801 into a mesoporous-TiO_(2)(mp-TiO_(2)) layer, which was used as a photoanode in SS-FDSSCs, which are inherently flexible. The PCE of the MOF-integrated SS-FDSSCs was 6.50%, which is comparable to that of the reference devices(4.19%).The MOF-801 enhanced SS-FDSSCs decreased the series resistance(R_(s)) value, resulting in effective electron extraction with improved short-circuit current density(J_(SC)), while also increasing the shunt resistance(R_(sh)) value to prevent the recombination of photo-induced electrons. The result is an improved fill factor and, consequently, a higher value for the PCE.

关键词： Photoanode Metal organic frameworks Solid-state electrolyte Dye-sensitized solar cells Fiber-shaped solar cells

1-19 Gluonic Structure of the Constituent Quark

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IMP & HIRFL Annual Report 2015年第1期 30-31页

作者： Zhang Baiyang Zhang Pengming Nikolai Kochelev hee-jung lee 不详

Based on both the constituent quark picture and the instanton model for QCD vacuum, we calculate the unpolarized and polarized gluon distributions in the constituent quark and in the nucleon. Our approach consists of two main steps. At the first step, we follow the Altarelli-Parisi (AP) approach[1] to calculate the gluon distributions inside the constituent quark generated by the perturbative quark-gluon interaction, the non-perturbative quarkgluon interaction, and the non-perturbative quark-gluon-pion anomalous chromomagnetic interaction. The nonperturbative interactions are related to the existence of the instantons, strong topological fluctuations of gluon fields, in the QCD vacuum. At the second step, the convolution model is applied to derive the gluon distributions in the nucleon.

关键词： Structure Constituent Quark

1-20 Anomalous Pion Production Induced by Nontrivial Topological Structure of QCD Vacuum

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IMP & HIRFL Annual Report 2015年第1期 31-32页

作者： Zhang Baiyang Zhang Pengming Nikolai Kochelev hee-jung lee 不详

We suggest a new mechanism of the inclusive production of pions in high energy reactions, also knows as anomalous pion production (APP) since the formation of the pions happens at short distances due to instantons which have a much smaller size in comparison with the confinement scale. Furthermore, in our approach it is not needed to include in the calculation any fragmentation functions which are related to the hadronization and, therefore, to the confinement dynamics. As the result, the value of the inclusive pion cross section is determined by the structure of the short range fluctuations of gluonic fields in the QCD vacuum. This mechanism breaks the pQCD factorization and might be a corner stone of various phenomena observed in high energy reactions in the few GeV range for the transfer momentum.

关键词： Topological Structure QCD Vacuum

Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation

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Optics and Photonics Journal 2012年第3期2卷 185-192页

作者： Chung-Mo Yang Dong-Seok Kim Yun Soo Park Jae-Hoon lee Yong Soo lee jung-hee lee GaN Power Research Group R&D Institute Samsung LED Co. Ltd Suwon Republic of Korea School of Electrical Engineering and Computer Science Kyungpook National University Daegu Republic of Korea

SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the light emitted from the LED surface. In addition, the effect of the Fresnel reflection is also responsible for the enhancement in output power of the double dielectric passivated LED. The leakage current of the LED passivated with Al2O3 layer was -3.46 × 10-11 A at -5 V, at least two and three orders lower in magnitude compared to that passivated with SiO2 layer (-7.14 × 10-9 A) and that of non-passivated LED (-1.9 × 10-8 A), respectively, which indicates that the Al2O3 layer is very effective in passivating the exposed GaN surface after dry etch and hence reduces nonradiative recombination as well as reabsorption of the emitted light near the etched surface.

关键词： GaN Light-Emitting Diode (LED) Al2O3 PEALD Passivation Double Dielectric Stack Layer