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Review of fabrication methods of large-area transparent graphene electrodes for industry

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Frontiers of Optoelectronics 2020年第2期13卷 91-113页

作者： Petri MUSTONEN David MACKENZIE harri lipsanen Department of Electronics and Nanoengineering Aalto UniversityAalto FI-00076Finland

Graphene is a two-dimensional material showing excellent properties for utilization in transparent electrodes;it has low sheet resistance,high optical transmission and is *** the most common transparent electrode material,tin-doped indium-oxide(ITO)is brittle,less transparent and expensive,which limit its compatibility in flexible electronics as well as in low-cost *** we review two large-area fabrication methods for graphene based transparent electrodes for industry:liquid exfoliation and low-pressure chemical vapor deposition(CVD).We discuss the basic methodologies behind the technologies with an emphasis on optical and electrical properties of recent ***-of-the-art methods for liquid exfoliation have as a figure of merit an electrical and optical conductivity ratio of 43.5,slightly over the minimum required for industry of 35,while CVD reaches as high as 419.

关键词： transparent electrodes graphene liquid exfoliation chemical vapor deposition(CVD)

Large-diameter indium antimonide microwire based broadband and robust optical switch

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Science China(Physics,Mechanics & Astronomy) 2023年第2期66卷 68-78页

作者： Fei Lou Xiangpeng Cui Xinyue Sheng Chunyan Jia Shuaiyi Zhang Xia Wang Vladislav Khayrudinov Baitao Zhang Shande Liu Wing Yim Tam harri lipsanen He Yang Jingliang He Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao School of Mathematics and PhysicsQingdaoUniversityof Scienceand TechnologyQingdao266061China School of Instrumenation and Optoeletronic Engineering Beihang University Beijing 100191China Department of Electronics and Nanoengineering Aalto Universiy EspooFl-0o076Finland State Key Laboratory of Crystal Materials Institute of Novel Semiconductors Shandong University.Jinan 250100China College of Electronic and Information Engineering Shandong University of Science and TechnologyQingdao 266590China Depariment of Physics and Wiliam Mong Institute of Nano Science and Technology Hong Kong University of Science and Technology.HongKongChina

Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been ***,studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and ***,we successfully grew the micronsized indium antimonide(InSb) wires,and examined their nonlinear optical properties by Z-scan and I-scan(power-dependent) methods within the wavelength range of 0.8-2.8 μ***,we demonstrated InSb micro wires(MWs) working as an effective and robust optical switch within 1-2.8 μm *** findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.

关键词： optical antimonide InSb

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

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Photonics Research 2021年第9期9卷 1811-1819页

作者： JUNTING LIU HE YANG VLADISLAV KHAYRUDINOV harri lipsanen HONGKUN NIE KEJIAN YANG BAITAO ZHANG JINGLIANG HE State Key Laboratory of Crystal Materials Institute of Novel SemiconductorsShandong UniversityJinan 250100China Summa Semiconductor Oy MicronovaEspoo FI-00076Finland Department of Electronics and Nanoengineering Aalto UniversityEspoo FI-00076Finland

Indium arsenide phosphide(In As P)nanowires(NWs),a member of theⅢ–Ⅴsemiconductor family,have been used in various photonic and optoelectronic applications thanks to their unique electrical and optical properties such as high carrier mobility and adjustable band *** this work,we synthesize In As P NWs and further explore their nonlinear optical *** ultrafast carrier dynamics and nonlinear optical response are thoroughly studied based on the nondegenerate pump probe and Z-scan experimental *** different characteristic carrier lifetimes(~2 and~15 ps)from In As P NWs are observed during the excited-carrier relaxation *** on the physical model analysis,the relaxation process can be ascribed to the carrier cooling process via carrier-phonon scattering and Auger *** addition,based on the measured excited-carrier lifetime and Pauli-blocking principle,we discover that In As P NWs show strong saturable absorption properties at the wavelengths of 532 and 1064 ***,we demonstrate for the first time a femtosecond(~426 fs)solid-state laser based on an In As P NWs saturable absorber at 1.04μ*** believe that our work provides a better understanding of the In As P NWs optical properties and will further advance their photonic applications in the near-infrared range.

关键词： nanowires nonlinear relaxation

Nanowire-assisted microcavity in a photonic crystal waveguide and the enabled high-efficiency optical frequency conversions

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Photonics Research 2020年第11期8卷 1734-1741页

作者： Linpeng Gu Liang Fang Qingchen Yuan Xuetao Gan Hao Yang Xutao Zhang Juntao Li Hanlin Fang Vladislav Khayrudinov harri lipsanen Zhipei Sun Jianlin Zhao Key Laboratory of Space Applied Physics and Chemistry Ministry of Educationand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129China State Key Laboratory of Optoelectronic Materials&Technologies School of PhysicsSun Yat-sen UniversityGuangzhou 510275China Department of Electronics and Nanoengineering Aalto UniversityEspoo FI-00076Finland QTF Centre of Excellence Department of Applied PhysicsAalto UniversityEspoo FI-00076Finland

We report an indium phosphide nanowire(NW)-induced cavity in a silicon planar photonic crystal(PPC)waveguide to improve the light–NW *** integration of NW shifts the transmission band of the PPC waveguide into the mode gap of the bare waveguide,which gives rise to a microcavity located on the NW *** modes with𝑄factors exceeding 103 are *** on the high density of the electric field in the microcavity,the light–NW interaction is enhanced strongly for efficient nonlinear frequency ***-harmonic generation and sum-frequency generation in the NW are realized with a continuous-wave pump laser in a power level of tens of microwatts,showing a cavity-enhancement factor of *** hybrid integration structure of NW-PPC waveguide and the self-formed microcavity not only opens a simple strategy to effectively enhance light–NW interactions,but also provides a compact platform to construct NW-based on-chip active devices.

关键词： waveguide pump crystal

Nonlinear optical absorption properties of InP nanowires and applications as a saturable absorber

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Photonics Research 2020年第6期8卷 1035-1041页

作者： JUNTING LIU HONGKUN NIE BINGZHENG YAN KEJIAN YANG HE YANG VLADISLAV KHAYRUDINOV harri lipsanen BAITAO ZHANG JINGLIANG HE State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China Key Laboratory of L aser&Infrared System Ministry of EducationShandong UniversityQingdao 266237China Department of Electronics and Nanoengineering Aalto UniversityEspoo FI-00076Finland

Indium phosphide(InP)nanowires(NWs)have attracted significant attention due to their exotic properties that are different from the bulk counterparts,and have been widely used for light generation,amplification,detection,modulation,and switching,***,high-quality InP NWs were directly grown on a quartz substrate by the Au-nanoparticle assisted vapor-liquid-solid *** thoroughly studied their nonlinear optical absorption properties at 1.06μm by the open-aperture Z-scan ***,a transition phenomenon from satu-rable absorption(SA)to reverse saturable absorption(RSA)was observed with the increase of the incident laser *** the analysis,we found that the effective nonlinear absorption cofficient(βeff-10^2 cm/MW)under the SA process was 3 orders of magnitude larger than that during the RSA ***,the SA proper-ties of InP NWs were experimentally verified by using them as a saturable absorber for a passively Q-switched Nd:YVO4 solid-state laser at 1.06μm,where the shortest pulse width of 462 ns and largest single pulse energy of 1.32μJ were ***,the ultrafast carrier relaxation dynamics were basically studied,and the intraband and inter-band ultrafast carrier relaxation times of 8.1 and 63.8 ps,respectively,were measured by a degenerate pump-probe method with the probe laser of 800 *** results well demonstrate the nonlinear optical absorption properties,which show the excellent light manipulating capabilities of InP NWs and pave a way for their applications in ultrafast nanophotonic devices.

关键词： optical saturable switched

ATOMIC LAYER DEPOSITION HfO_(2)FILM USED AS BUFFER LAYER OF THE Pt/(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)/HfO_(2)/Si CAPACITORS FOR FeFET APPLICATION

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Journal of Advanced Dielectrics 2011年第3期1卷 369-377页

作者： DAN XIE TINGTING FENG YAFENG LUO XUEGUANG HAN TIANLING REN MARKUS BOSUND SHUO LI VELI-MATTI AIRAKSINEN harri lipsanen SEPPO HONKANEN Tsinghua National Laboratory for Information Science and Technology(TNList) Institute of Microelectronics Tsinghua UniversityBeijing 100084P.R.China Department of Micro and Nanosciences Aalto University School of Science and Technology Finland State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054P.R.China

Neodymium and manganese doped BiFeO_(3)-(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)(BNFMO)ferro-electric film and HfO_(2)layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition(ALD)method,*** ferroelectric-insulator-semiconductor(MFIS)capacitors with 200 nm thick BNFMO and 5 nm thick HfO_(2)layer on silicon substrate have been prepared and *** is found that there is no distinct interdifusion and reaction occurring at the interface between BNFMO/HfO_(2)and HfO_(2)/*** capacitance-voltage(C-V)and leakage current properties of Pt/HfO_(2)/Si capacitors with different HfO_(2)thickness were *** MFIS structure showed clockwise C-V hysteresis loops due to the ferroelectric polarization of *** maximum memory window is 5 *** current of the Pt/BNFMO/HfO_(2)/Si capacitor was about 2.1×10^(-6)A/cm^(2)at an applied voltage of 4V.

关键词： ALD HfO_(2) BFO MFIS ferroelectric capacitor

Mode couplings of a semiconductor nanowire scanning across a photonic crystal nanocavity

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Chinese Optics Letters 2019年第6期17卷 80-85页

作者： Qingchen Yuan Liang Fang Qiang Zhao Yadong Wang Bo Mao Zhipei Sun Jianlin Zhao Xuetao Gan MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information TechnologySchool of ScienceNorthwestern Polytechnical UniversityXi’an 710072China Qian Xuesen Laboratory of Space Technology China Academy of Space TechnologyBeijing 100094China Department of Electronics and Nanoengineering Aalto UniversityEspooFI-00076Finland QTF Centre of Excellence Department of Applied PhysicsAalto UniversityEspooFI-00076Finland

The position-dependent mode couplings between a semiconductor nanowire(NW)and a planar photonic crystal(PPC)nanocavity are *** scanning an NW across a PPC nanocavity along the hexagonal lattice’sΓ– M and M– K directions,the variations of resonant wavelengths,quality factors,and mode volumes in both fundamental and second-order resonant modes are calculated,implying optimal configurations for strong mode-NW couplings and light-NW *** the fundamental(second-order)resonant mode,scanning an NW along the M– K(Γ– M)direction is preferred,which supports stronger light-NW interactions with larger NW-position tolerances and higher quality factors *** simulation results are confirmed experimentally with good agreements.

关键词： The position-dependent semiconductor nanowire(NW) with good agreements