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Science China(Information Sciences) 2020年第6期63卷 164-175页

作者： Xingxing GUO Shuiying XIANG Yahui ZHANG Aijun WEN yue hao State Key Laboratory of Integrated Service Networks Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of Microelectronics Xidian University

In this paper, a neuromorphic reservoir computing(RC) system with enhanced memory capacity(MC) based on a vertical-cavity surface-emitting laser(VCSEL) subject to double optical feedbacks(DOF)is proposed and investigated numerically. The aim of this study is to explore the MC of the proposed *** the purpose of comparison, the MC of the VCSEL-based RC system with single optical feedback(SOF)is also taken into account. It is found that, compared with the VCSEL-based RC system subject to SOF,enhanced MC can be obtained for the VCSEL-based RC system with DOF. Besides, the effects of feedback strength, injected strength, frequency detuning as well as injection current on the MC of the VCSEL-based RC system with DOF are considered. Moreover, the influence of feedback delays is also carefully ***, such proposed VCSEL-based RC system with DOF provides a prospect for the further development of the neuromorphic photonic system based on RC.

关键词： vertical-cavity surface-emitting laser nanophotonic reservoir computing memory capacity double feedback information processing

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水库群蓄水调度多目标随机规划与聚类分析

水力发电学报 2024年第2期43卷 46-56页

作者：全雨菲徐斌岳浩郭乐黄鑫朱聆玮钟平安河海大学水文水资源学院南京210098 水安全与水科学协同创新中心南京210098 中水北方勘测设计研究有限责任公司天津300222 中国长江三峡集团公司湖北宜昌443133

梯级水库群汛后蓄水期蓄水时机、速率、次序决策面临径流不确定、多目标竞合关系复杂等问题。针对蓄水期决策难题,构建发电、蓄满、生态、上、下游防洪安全等指标的水库群多目标随机规划模型,生成非劣解集;采用K均值聚类法提取非劣解集... 详细信息

梯级水库群汛后蓄水期蓄水时机、速率、次序决策面临径流不确定、多目标竞合关系复杂等问题。针对蓄水期决策难题,构建发电、蓄满、生态、上、下游防洪安全等指标的水库群多目标随机规划模型,生成非劣解集;采用K均值聚类法提取非劣解集类别特征,分析目标矛盾关系及蓄水机制。以溪洛渡-葛洲坝梯级水库群为例,结果表明:蓄水期来水越枯,蓄水难度越大,综合效益越低,枯水年发电量较丰水年下降了21.6%;上游防洪安全与发电量矛盾性最强,由枯到丰相关系数降低了0.047;溪洛渡、三峡蓄水呈分段式变化,前期快速蓄水,中后期缓速蓄水。本研究提出的耦合水库群多目标随机规划与聚类分析方法对于科学制定水库群蓄水方案具有参考价值。

关键词：水库调度梯级水库群多目标优化联合调度 K均值聚类

Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

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Chinese Science Bulletin 2014年第12期59卷 1228-1234页

作者： yue hao Junshuai Xue Jincheng Zhang Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

As a promising group III-nitride semiconductor material,InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 *** a literature survey of current status and progress of InAlNrelated studies,this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University,which focuses on innovation of the material growth approach and device structure for electronic applications.A novel pulsed metal organic chemical vapor deposition(PMOCVD)was first adopted to epitaxy of InAlN-related heterostructures,and excellent crystalline and electrical properties were ***,the first domestic InAlN-based high-electron mobility transistor(HEMT)was *** on the PMOCVD in combination with special GaN channel growth approach,high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first ***,other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching ***,some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications,showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.

关键词：化学气相沉积电子应用电子器件异质结构有机金属脉冲高电子迁移率晶体管西安电子科技大学

双维异质亲环境创新与企业价值新质成长--基于环境社会共治的分析

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科学管理研究 2024年第5期42卷 108-117页

作者：彭皓玥贾立华徐燕谢雨馨王泓渝山西财经大学工商管理学院山西太原030006 山西财经大学管理科学与工程学院山西太原030006

新质生产力思想及环境社会共治理念,要求企业价值成长恪守创新驱动与绿色底色。亲环境创新作为企业高质量发展创新性要素的绿色配置,是实现新质生产力跃迁的重要途径。考虑到企业亲环境创新践行的异质性,分别探讨工具型和规范型亲环境... 详细信息

新质生产力思想及环境社会共治理念,要求企业价值成长恪守创新驱动与绿色底色。亲环境创新作为企业高质量发展创新性要素的绿色配置,是实现新质生产力跃迁的重要途径。考虑到企业亲环境创新践行的异质性,分别探讨工具型和规范型亲环境创新对企业价值新质成长的影响机制,揭示市场竞争力和融资约束在其关系中的内在影响机理,并研究了媒体关注在上述关系中的调节作用。基于中国沪深A股中制造业上市公司微观数据,研究发现:①工具型亲环境创新、规范型亲环境创新均能促进企业价值新质成长,但前者更有利于提升经济价值,后者更倾向于改善环境价值;②市场竞争力和融资约束,在亲环境创新与企业价值新质成长关系的不同维度间均起到一定的中介作用,相较而言,前者更多地发挥部分中介效应,后者则主要表现为完全中介;③媒体关注能够有效引发公众监督力、激发流量导向,在亲环境创新与企业价值新质成长的关系中,发挥显著的正向过程调节作用。研究结果揭示了异质性亲环境创新对企业价值新质成长的多维影响机理、内在机制和边界条件,对环境社会共治企业高质量发展具有一定启示。

关键词：亲环境创新企业价值新质成长社会共治

Role of lateral growth on the structural properties of high temperature GaN layer

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Science China(Technological Sciences) 2009年第5期52卷 1242-1247页

作者： GAO ZhiYuan hao yue LI PeiXian ZHANG JinCheng Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China

The role of lateral growth on the structural properties of high temperature (HT) GaN epitaxial layer has been investigated by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD). Variations of the lateral growth rate of HT GaN in metal-organic chemical vapor deposition (MOCVD) can be obtained by changing the V/III ratio. It is found that under higher lateral growth rate, dislocation is easier to bend into subgrains away from c axis, and the position where bend occurs is closer to the buffer layer, however, dislocation density does not show to monotonically vary with increasing lateral growth rate. A model concerning the GaN growth dynamics and dislocation bending mechanics has been proposed to explain the correlation between lateral growth and the structural properties of GaN.

关键词： GaN lateral growth dislocation V/III

Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA

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Science China(Information Sciences) 2022年第8期65卷 228-237页

作者： Ziwei SONG Shuiying XIANG Xingyu CAO Shihao Zhao yue hao State Key Laboratory of Integrated Service Networks Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian University

We experimentally design two photonic spike-timing-dependent plasticity(STDP) schemes based on a single vertical-cavity semiconductor optical amplifier(VCSOA) and demonstrate the photonic implementation of STDP characteristics. In the first scheme, a single-polarized optical pulse train is injected into the VCSOA, in which a pair of optical pulses with a time difference is designed to emulate the pre-synaptic and post-synaptic spikes. In the second scheme, dual-polarized optical pulses emulating the pre-synaptic and post-synaptic spikes are injected into the single VCSOA. Furthermore, the effects of the initial wavelength detuning and the power of the input optical pulse on the STDP curve are analyzed. The proposed photonic STDP schemes based on a single VCSOA need relatively low bias current and power consumption, and thus,are ideal optical synaptic devices forming key components in the construction of the photonic neuromorphic computing system.

关键词： neuromorphic photonics vertical-cavity semiconductor optical amplifier spike-timing-dependent plasticity optical neural systems pulsed optical injection

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga_(2)O_(3)p-n异质结与器件

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Science China Materials 2024年第5期67卷 1646-1653页

作者：张泽雨林宋庆文刘丁赫闫奕如陈昊穆昌根陈大正冯倩张进成张玉明郝跃张春福 National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an710071China

在氧化镓(Ga_(2)O_(3))材料p型掺杂困难的背景下,Ga_(2)O_(3)p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga_(2)O_(3)异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真... 详细信息

在氧化镓(Ga_(2)O_(3))材料p型掺杂困难的背景下,Ga_(2)O_(3)p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga_(2)O_(3)异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真空的雾化学气相沉积(Mist-CVD)外延制备了单晶氧化镍(NiO)和β-Ga_(2)O_(3)异质结.其中,NiO(111)和β-Ga_(2)O_(3)(-201)的XRD摇摆曲线半高宽分别为0.077°和0.807°.NiO与β-Ga_(2)O_(3)之间的能带表现为Ⅱ型异质结构.基于此异质结,我们制备了准垂直器件,器件具有明显的p-n结整流特性,反向击穿电压为117 V.本工作为β-Ga_(2)O_(3)异质p-n结的制备提供了一种低成本、高质量的方法.

关键词： β-Ga_(2)O_(3) heterojunction structure p-n junctions NiO mist-CVD

高功率密度外延的单晶金刚石制备高性能辐射探测器

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Science China Materials 2024年第7期67卷 2329-2334页

作者：丁森川张金风苏凯任泽阳陈军飞杨智清张进成郝跃 State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Xidian-Wuhu Research Institute Wuhu 241002China

辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具.本文采用微波等离子体化学气相沉积(MPCVD)方法在高温高压(HTHP)金刚石衬底上制备了高质量的单晶金刚石.我们通过压缩等离子体球来提高微波功率密度,优化了等离... 详细信息

辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具.本文采用微波等离子体化学气相沉积(MPCVD)方法在高温高压(HTHP)金刚石衬底上制备了高质量的单晶金刚石.我们通过压缩等离子体球来提高微波功率密度,优化了等离子体中的碳氢(C/H)比,并显著降低了金刚石外延层中的杂质和位错含量.(004)面X射线衍射摇摆曲线的半高宽(FWHM)仅为15弧秒,在室温下的光致发光光谱中没有检测到杂质发光带.使用制备的200μm厚的外延金刚石膜制成的辐射探测器可对α-粒子响应,其电子的电荷收集效率为97.03%,能量分辨率为2.1%,空穴的电荷收集效率和能量分辨率为97.86%和1.5%.此外,电子和空穴的迁移率和寿命的乘积分别达到8×10^(−5)和4.1×10^(−4) cm^(2) V^(−1).此方法有望满足商用金刚石辐射探测器对性能和成本控制的严苛要求.

关键词： single-crystal diamond radiation detectors high-power-density epitaxy charge collection efficiency

基于PRIDE PPP-AR的精密单点定位精度分析

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测绘与空间地理信息 2024年第9期47卷 37-39,43页

作者：赵忠海岳昊关沧海自然资源部第二大地测量队黑龙江哈尔滨150025

为充分验证PRIDE PPP-AR软件在精密单点定位解算方面的稳定性与精度,本文利用收集的134座HLJCORS基准站GNSS观测数据,同时采用PRIDE PPP-AR软件与高精度GNSS数据处理软件Bernese进行精密单点定位解算,通过解算坐标的分析可知,PRIDE PPP... 详细信息

为充分验证PRIDE PPP-AR软件在精密单点定位解算方面的稳定性与精度,本文利用收集的134座HLJCORS基准站GNSS观测数据,同时采用PRIDE PPP-AR软件与高精度GNSS数据处理软件Bernese进行精密单点定位解算,通过解算坐标的分析可知,PRIDE PPP-AR软件在水平分量上与Bernese相差平均约4 mm,在垂直分量上基本一致。基于本文研究,在工程应用中可以优先考虑采用PRIDE PPP-AR软件,实现高效、快速、高精度定位的需求。

关键词： GNSS 精密单点定位开源数据解算

重离子辐射对AlGaN/GaN高电子迁移率晶体管低频噪声特性的影响

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物理学报 2024年第3期73卷 209-216页

作者：吕玲邢木涵薛博瑞曹艳荣胡培培郑雪峰马晓华郝跃西安电子科技大学微电子学院西安710071 西安电子科技大学机电工程学院西安710071 中国科学院近代物理研究所兰州730000

采用^(181)Ta^(32+)重离子辐射AlGaN/GaN高电子迁移率晶体管,获得器件在重离子辐射前后的电学特性和低频噪声特性.重离子辐射导致器件的阈值电压正向漂移、最大饱和电流减小等电学参数的退化.微光显微测试发现辐射后器件热点数量明显增... 详细信息

采用^(181)Ta^(32+)重离子辐射AlGaN/GaN高电子迁移率晶体管,获得器件在重离子辐射前后的电学特性和低频噪声特性.重离子辐射导致器件的阈值电压正向漂移、最大饱和电流减小等电学参数的退化.微光显微测试发现辐射后器件热点数量明显增加,引入更多缺陷.随着辐射注量的增加,电流噪声功率谱密度逐渐增大,在注量为1×10^(10)ions/cm^(2)重离子辐射后,缺陷密度增大到3.19×10^(18)cm^(-3)·eV^(-1),不同栅压下的Hooge参数增大.通过漏极电流噪声归一化功率谱密度随偏置电压的变化分析,发现重离子辐射产生的缺陷会导致寄生串联电阻增大.

关键词：重离子辐射氮化镓高电子迁移率晶体管低频噪声