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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors

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Chinese Physics B 2021年第4期30卷 166-172页

作者： hao Zou Lin-An Yang Xiao-Hua Ma yue hao The State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

The effects of various notch structures on direct current(DC) and radio frequency(RF) performances of AlGaN/GaN high electron mobility transistors(HEMTs) are *** AlGaN/GaN HEMTs,each with a 0.8-μm gate length,50-μm gate width,and 3-μm source-drain distance in various notch structures at the AlGaN/GaN barrier layer,are manufactured to achieve the desired DC and RF *** maximum drain current(I_(ds,max)),pinch-off voltage(V_(th)),maximum transconductance(gm),gate voltage swing(GVS),subthreshold current,gate leakage current,pulsed I-V characteristics,breakdown voltage,cut-off frequency(f_(T)),and maximum oscillation frequency(f_(max)) are *** results show that the double-notch structure HEMT has a 30% improvement of gate voltage swing,a 42.2% improvement of breakdown voltage,and a 9% improvement of cut-off frequency compared with the conventional *** notch structure also has a good suppression of the current collapse.

关键词： AlGaN/GaN high electron mobility transistors(HEMTs) barrier layer notch

牧区边民生计方式的现状与对策研究——基于内蒙古满都拉镇的田野调查

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边疆经济与文化 2024年第11期 55-59页

作者：巴责达康岳豪内蒙古师范大学民族学人类学学院呼和浩特010020 内蒙古师范大学祖国北疆国家安全研究中心呼和浩特010020

边民生计始终同国家发展与边疆稳定密不可分,是关乎全面推进兴边富民、稳边固边的关键要素。内蒙古边境地区的满都拉镇作为我国对蒙开放的重要通道,地理位置十分优越,是北疆安全、自然生态、能源资源、农畜产品、向北开放的前哨站。近年... 详细信息

边民生计始终同国家发展与边疆稳定密不可分,是关乎全面推进兴边富民、稳边固边的关键要素。内蒙古边境地区的满都拉镇作为我国对蒙开放的重要通道,地理位置十分优越,是北疆安全、自然生态、能源资源、农畜产品、向北开放的前哨站。近年来,当地边民形成了以畜牧守边、口岸商铺、外来务工的多元生计方式,但因边境牧场生态脆弱、牧民思维滞后、地方人才稀缺、基础设施落后等因素影响,致使边民生计面临挑战,由此应落实禁牧政策,完善牧区合作社,推动边境贸易,改善基础设施,发展边境旅游,进而促进满都拉镇经济发展,提升边民福祉,维护边疆社会和谐稳定。

关键词：内蒙古边境牧区边民生计方式满都拉

红色基因融入新疆高校思想政治教育的实践路径探究

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林区教学 2024年第8期 5-8页

作者：包月强贾振霞郝悦新疆科技学院马克思主义学院新疆库尔勒841000

红色基因是中国共产党人持续奋斗的不竭动力,是对革命精神的一种传承,也是中国共产党宝贵的精神财富。一方面,红色基因融入新疆高校思想政治教育有助于大学生坚定理想信念、厚植爱党爱国情怀、树立正确价值观以及建设各民族共有精神家园... 详细信息

红色基因是中国共产党人持续奋斗的不竭动力,是对革命精神的一种传承,也是中国共产党宝贵的精神财富。一方面,红色基因融入新疆高校思想政治教育有助于大学生坚定理想信念、厚植爱党爱国情怀、树立正确价值观以及建设各民族共有精神家园;另一方面,红色基因融入新疆高校思想政治教育时存在专业课、思政课挖掘和融入红色基因协同效果欠佳、校园红色文化和红色基因氛围创设不够、红色基因融入和宣传的方式与途径过于单一以及思政课堂教学和实践教学红色基因融入上衔接不够紧密等问题,需要在实现专业课和思政课对红色基因挖掘与融入上的同向同行、营造浓厚的红色基因育人校园氛围、创新红色基因融入的渠道和方式、实现思政课堂教学和实践教学在红色基因融入上的双向互动上下功夫。

关键词：红色基因思想政治教育新疆高校

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混合型联盟航线网络结构下航班频率优化研究

航空计算技术 2024年第1期54卷 82-86页

作者：杜皓月杨文东南京航空航天大学江苏南京211000

科学优化联盟航线网络结构下的航班计划可充分发挥联盟合作效应。综合考虑航空公司运行成本与旅客时间成本,以航班运行成本和旅客计划延误成本总成本最小为目标,建立混合型联盟航线网络结构下多机型多路径的航班频率优化模型。设计航班... 详细信息

科学优化联盟航线网络结构下的航班计划可充分发挥联盟合作效应。综合考虑航空公司运行成本与旅客时间成本,以航班运行成本和旅客计划延误成本总成本最小为目标,建立混合型联盟航线网络结构下多机型多路径的航班频率优化模型。设计航班频率优化模型启发式算法,案例分析验证了模型可行性。结果表明,模型能一定程度上降低旅客出行成本和航空公司运行成本,可为航空公司制定混合联盟航班计划的频率优化提供参考。

关键词：航空运输航班计划航班频率优化航空联盟

Flexible Nanocomposite Conductors for Electromagnetic Interference Shielding

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Nano-Micro Letters 2023年第10期15卷 210-259页

作者： Ze Nan Wei Wei Zhenhua Lin Jingjing Chang yue hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University2 South Taibai RoadXi’an 710071People’s Republic of China Advanced Interdisciplinary Research Center for Flexible Electronics Xidian University2 South Taibai RoadXi’an 710071People’s Republic of China

With the extensive use of electronic communication technology in integrated circuit systems and wearable devices, electromagnetic interference(EMI) has increased dramatically. The shortcomings of conventional rigid EMI shielding materials include high brittleness, poor comfort, and unsuitability for conforming and deformable applications. Hitherto, flexible(particularly elastic) nanocomposites have attracted enormous interest due to their excellent deformability. However, the current flexible shielding nanocomposites present low mechanical stability and resilience, relatively poor EMI shielding performance, and limited multifunctionality. Herein, the advances in low-dimensional EMI shielding nanomaterials-based elastomers are outlined and a selection of the most remarkable examples is discussed. And the corresponding modification strategies and deformability performance are summarized. Finally, expectations for this quickly increasing sector are discussed, as well as future challenges.

关键词： Electromagnetic interference shielding Intrinsically stretchable nanocomposites Compressible monolith Low-dimensional materials Flexible devices

乙型脑炎病毒非结构蛋白的表达及与hnRNP K的相互作用

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北京农学院学报 2024年第1期39卷 37-42页

作者：郝悦徐胜奎阮文科北京农学院动物科学技术学院北京102206

【目的】为探明JEV病毒复制与宿主蛋白的关系。【方法】首先构建非结构蛋白质粒,然后将构建成功的非结构蛋白的质粒转染至Vero细胞中,24 h在荧光显微镜下观察蛋白表达情况,再分别与pCMV-MYC-hnRNP K质粒同时转染至Vero细胞中,培养24 h,... 详细信息

【目的】为探明JEV病毒复制与宿主蛋白的关系。【方法】首先构建非结构蛋白质粒,然后将构建成功的非结构蛋白的质粒转染至Vero细胞中,24 h在荧光显微镜下观察蛋白表达情况,再分别与pCMV-MYC-hnRNP K质粒同时转染至Vero细胞中,培养24 h,收取细胞蛋白样,进行Co-IP试验相关步骤,用Western-blot实验进行结果呈现,得出试验结果。【结果】构建的非结构蛋白质粒在Vero细胞中可以表达,通过与表达hnRNP K蛋白的质粒共转染,通过Co-IP试验经Western-blot结果分析能够得出JEV的NS1与hnRNP K之间存在相互作用,JEV的NS2a、NS3、NS5与宿主hnRNP K之间不存在相互作用。【结论】JEV的NS1蛋白与宿主蛋白hnRNP K存在相互作用,为JEV非结构蛋白的研究进一步拓宽了思路,同时为JEV病毒在宿主细胞中的生命活动周期的研究提供了基础,为深入研究JEV病毒复制提供了新方向。

关键词：乙型脑炎非结构蛋白 hnRNP K 免疫共沉淀蛋白互作

Optimizing the Performance of CsPbI3-Based Perovskite Solar Cells via Doping a ZnO Electron Transport Layer Coupled with Interface Engineering

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Nano-Micro Letters 2019年第4期11卷 605-618页

作者： Man yue Jie Su Peng Zhao Zhenhua Lin Jincheng Zhang Jingjing Chang yue hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University2 South Taibai RoadXi’an 710071People’s Republic of China

Interface engineering has been regarded as an effective and noninvasive means to optimize the performance of perovskite solar cells(PSCs).Here,doping engineering of a ZnO electron transport layer(ETL)and CsPbI3/ZnO interface engineering via introduction of an interfacial layer are employed to improve the performances of CsPbI3-based *** results show that when introducing a TiO2 buffer layer while increasing the ZnO layer doping concentration,the open-circuit voltage,power conversion efficiency,and fill factor of the CsPbI3-based PSCs can be improved to 1.31 V,21.06%,and 74.07%,respectively,which are superior to those of PSCs only modified by the TiO2 buffer layer or high-concentration doping of ZnO *** the one hand,the buffer layer relieves the band bending and structural disorder of *** the other hand,the increased doping concentration of the ZnO layer improves the conductivity of the TiO2/ZnO bilayer ETL because of the strong interaction between the TiO2 and ZnO ***,such phenomena are not observed for those of a PCBM/ZnO bilayer ETL because of the weak interlayer interaction of the PCBM/ZnO *** results provide a comprehensive understanding of the CsPbI3/ZnO interface and suggest a guideline to design high-performance PSCs.

关键词： All-inorganic CsPbI3 perovskites Interface engineering Doping ZnO Simulation

A Unity-Gain Buffer Assisted Noise-Shaping SAR ADC Based on Error-Feedback Structure

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Chinese Journal of Electronics 2022年第4期31卷 658-664页

作者： YI Pinyun ZHU Zhangming XU Nuo FANG Liang hao yue State Key Laboratory of High Performance Computing College of ComputerNational University of Defense Technology School of Microelectronics Xidian University College of Computer National University of Defense Technology State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University

The passive noise-shaping successive approximation register(NS-SAR) analog-to-digital converter(ADC) demonstrates high performance in resolution improvement, power reduction, and process scaling, while its charge-sharing loss and limited bandwidth weaken the noise-shaping effect. This paper presents a first-order NSSAR ADC based on error-feedback(EF) structure to realize high-efficiency noise shaping. It employs a lossless EF path by using a set of ping-pong switching capacitors with passive signal-residue summation technique. The proposed first-order EF NS-SAR prototype can be promoted to multi-order structure with the minor modification. Verified by simulation in 65-nm CMOS process, the proposed 9-bit NS-SAR ADC consumes 183.66 μW when operating at 20 MS/s with the supply voltage of 1.2 V. At the oversampling ratio of 16, it achieves a peak signal-tonoise-and-distortion ratio of 81 d B, yielding Schreier figure of merit of 176.32 d B.

关键词： Noise-shaping SAR ADC Error feedback Unity-gain buffer Lossless integration Ping-pong manner Full-resolution switching

A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns

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Science China(Information Sciences) 2021年第2期64卷 202-210页

作者： Yahui ZHANG Shuiying XIANG Xingxing GUO Aijun WEN yue hao State Key Laboratory of Integrated Service Networks Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian University

A modified supervised learning rule which is suitable for training photonic spiking neural networks(SNN) is proposed for the first time. The proposed learning rule is independent of the time intervals between actual spike and desired spike or between presynaptic spike and postsynaptic spike. Based on the proposed supervised learning rule, 10 digital images are learned in photonic neural network which consists of 30 presynaptic neurons and 10 postsynaptic neurons. Presynaptic and postsynaptic neurons are photonic neurons based on vertical-cavity surface-emitting lasers with an embedded saturable absorber(VCSEL-SA).The results show that 10 digital images are recognized correctly in photonic SNN after enough ***, the effects of learning rate, the jitters of learning rate, initial weights distribution of SNN and bias current of postsynaptic neurons(VCSELs-SA) on the recognized error are examined carefully based on the proposed learning rule. To the best of our knowledge, such modified supervised learning rule has not yet been reported, which would contribute to training photonic neural networks, and hence is interesting for neuromorphic photonic systems and pattern recognition.

关键词： vertical-cavity surface-emitting laser modified supervised learning rule optical spiking neural networks learning system pattern recognition