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Slicing capacity-centered mode selection and resource optimization for network-assisted full-duplex cell-free distributed massive MIMO systems

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Science China(Information Sciences) 2024年第1期67卷 203-220页

作者： Jie WANG Jiamin LI Pengcheng ZHU Dongming WANG Hongbiao ZHANG yue hao Bin SHENG National Mobile Communications Research Laboratory Southeast University 2. Purple Mountain Laboratories China Mobile Research Institute

Network-assisted full-duplex(NAFD) cell-free distributed massive multiple-input multipleoutput(MIMO) systems enable uplink(UL) and downlink(DL) communications within the same timefrequency resources,which potentially reduce latency by avoiding the overhead of switching UL/DL ***,how to choose UL/DL modes remains an important factor affecting system *** the dramatic increase in the number of users and access points(APs),massive access brings significant overhead in the mode ***,the different quality of service(QoS) among users also makes the effective utilization of resources *** one of the most promising technologies in sixth-generation(6G),network slicing enables the adaptive configuration of limited UL/DL resources through the resource isolation assisted NAFD ***,we propose a slicing capacity-centered *** this scheme,APs are motivated by slicing requirements and associated slices to form different *** mode selection and resource allocation are performed within each subsystem to reduce overhead and improve resource *** implement this scheme efficiently,a double-layer deep reinforcement learning(DRL)mechanism is used to realize the joint optimization of mode selection and resource *** results show that the slicing capacity-centered scheme can effectively improve resource utilization and reduce overhead.

关键词： network-assisted full-duplex network slicing mode selection resource optimization deep reinforcement learning

Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate

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Science China(Information Sciences) 2024年第5期67卷 341-342页

作者： Wen HONG Chao ZHANG Fang ZHANG Xuefeng ZHENG Xiaohua MA yue hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University

With the development of integrated circuits, there is a growing demand for higher power devices [1]. Gallium oxide（Ga2O3） holds promise for high power devices due to its wide bandgap and high breakdown electric field strength [2].However, its low thermal conductivity induces severe selfheating effects, limiting its performance and ***, effective thermal management techniques are urgently needed for Ga2O3devices.

关键词： Gallium compounds

Short-term prediction for chaotic time series based on photonic reservoir computing using VCSEL with a feedback loop

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Photonics Research 2024年第6期12卷 1222-1230页

作者： XINGXING GUO HANXU ZHOU SHUIYING XIANG QIAN YU YAHUI ZHANG YANAN HAN TAO WANG yue hao State Key Laboratory of Integrated Service Networks Xidian UniversityXi'an 710071China State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

Chaos,occurring in a deterministic system,has permeated various fields such as mathematics,physics,and life ***,the prediction of chaotic time series has received widespread attention and made signifi-cant ***,many problems,such as high computational complexity and difficulty in hardware im-plementation,could not be solved by existing *** overcome the problems,we employ the chaotic system of a vertical-cavity surface-emitting laser(VCSEL)mutual coupling network to generate chaotic time series through optical system simulation and experimentation in this ***,a photonic reservoir com-puting based on VCSEL,along with a feedback loop,is proposed for the short-term prediction of the chaotic time *** relationship between the prediction difficulty of the reservoir computing(RC)system and the differ-ence in complexity of the chaotic time series has been studied with ***,the attention coefficient of injection strength and feedback strength,prediction duration,and other factors on system perfor-mance are considered in both simulation and *** use of the RC system to predict the chaotic time series generated by actual chaotic systems is significant for expanding the practical application scenarios of the RC.

关键词： loop chaotic prediction

Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells

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Research 2024年第2期2023卷 181-190页

作者： Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi Jincheng Zhang Chunfu Zhang yue hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi 710071China Xi'an Baoxin Solar Technology Co. Ltd.Xi'an710071China

Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar *** this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 *** excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive *** is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier ***,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar *** findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

关键词： perovskite Graded Highly

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

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Science China(Information Sciences) 2024年第6期67卷 459-460页

作者： Hanghai DU Lu hao Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG yue hao State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University State Key Laboratory of Integrated Services Networks School of Communication EngineeringXidian University

GaN-based metal-insulator-semiconductor high-electronmobility-transistors (MISHEMTs) have many excellent performances compared with the Si and Ga As counterparts,and are prime candidates for applications in communicat...

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Microfacies and diagenetic alteration in a semi-deep to deep lacustrine shale: The Yanchang Formation in the Ordos Basin, China

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Petroleum Science 2024年第3期21卷 1524-1538页

作者： Bin Bai Jing-yue hao Ling Fu Yu-Xi Liu Jian-Peng Wang Lan Wang Kevin GTaylor Lin Ma PetroChina Research Institute of Petroleum Exploration and Development Beijing100083China Department of Earth and Environmental Sciences University of ManchesterM139PLUK College of Earth Sciences Jilin UniversityChangchun130061jilinChina Department of Chemical Engineering University of ManchesterM139PLUK

The mineralogical development and diagenetic sequence of lacustrine shales in the Chang 7 Member of the Yanchang Formation in the Ordos Basin are detailed studied.A model of their depositional system and a diagenetic diagram are proposed in this *** detailed petrographic,mineralogical,and elemental analyses,four distinct shale types are identified:argillaceous shale,siliceous shale,calcareous shale,and carbonate,clay,and silt-bearing *** main diagenetic process in argillaceous shale is the transformation of illite to smectite,negatively impacting shale *** shale undergoes carbonate cementation and quartz dissolution,contributing to increased porosity,particularly in *** shale experiences diagenesis characterised by carbonate formation and dissolution,with a prevalence of *** carbonate,clay,and silt-bearing shale,the dissolution of K-feldspar contributes to illitization of *** shale,characterised by more clay minerals and lower mesopore volume,is identified as a potential hydrocarbon *** shale,with the highest pore volume and abundant inter-mineral pores,emerges as a promising shale oil *** findings contribute to a comprehensive understanding of shale properties,aiding in the prediction of shale oil exploration potential in the studied area.

关键词： Ordos Basin Yanchang Formation Chang 7 Member Diagenesis Microfacies

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure

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Science China(Information Sciences) 2024年第4期67卷 341-342页

作者： Chunzhou SHI Ling YANG Meng ZHANG hao LU Mei WU Bin HOU Xuerui NIU Qian YU Wenliang LIU Wenze GAO Xiaohua MA yue hao School of Advanced Materials and Nanotechnology Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology Xidian University

GaN-based high-electric-mobility transistors(HEMTs) have been investigated thoroughly because of their promising applications in high-frequency,-voltage, and-power applications. However, the theoretical material limit prevents conventional single-heterostructure GaN HEMTs from achieving high performance despite numerous efforts [1–3].

关键词： Drain current

Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

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Nano Research 2024年第6期17卷 5670-5679页

作者： Yong Wang Dingyi Yang Wei Xu Yongjie Xu Yu Zhang Zixuan Cheng Yizhang Wu Xuetao Gan Wei Zhong Yan Liu Genquan Han yue hao Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of MicroelectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710071China Emerging Device and Chip Laboratory Hangzhou Institute of TechnologyXidian UniversityHangzhou 311200China INRS Centre for Energy Materials and Telecommunications1650 Boul.Lionel BouletVarennesQC J3X 1P7Canada National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China School of Education Jiangsu Open UniversityNanjing 210036China Department of Physics Shaanxi University of Science and TechnologyXi’an 710021China Department of Applied Physical Sciences The University of North Carolina at Chapel HillChapel HillNC 27514USA Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129 China

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic ***,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition *** exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane ***,we acquired clear evidences of ferromagnetic behavior at room *** structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and *** a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room *** addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

关键词： crystallinity carbon nitride room-temperature ferromagnetism piezoelectricity magnetic force microscopy density functional theory(DFT)calculations

Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr_(3) Solar Cells

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Energy & Environmental Materials 2024年第1期7卷 168-175页

作者： Zeyang Zhang Weidong Zhu Tianjiao Han Tianran Wang Wenming Chai Jiaduo Zhu He Xi Dazheng Chen Gang Lu Peng Dong Jincheng Zhang Chunfu Zhang yue hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'an 710071China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou institute of technologyXidian UniversityGuangzhou 510555China Qinghai Huanghe Hydropower Development CO. LTD.Xining810008China

Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)*** a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)*** calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)***,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation ***,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.

关键词： carbon-electrode perovskite solar cells crystal orientation engineering CsPbBr_(3) low temperature two-step sequential deposition