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Effect of oxygen precipitates in solar grade silicon on minority carrier lifetime and efficiency of solar cells

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Rare Metals 2006年第Z1期25卷 141-145页

作者： SUN Haizhi LIU Caichi hao qiuyan WANG Lijian Institute of Information Functional Material Hebei University of Technology Tianjin 300130 China Institute of Information Functional Material Hebei University of Technology Tianjin 300130 China Institute of Information Functional Material Hebei University of Technology Tianjin 300130 China Institute of Information Functional Material Hebei University of Technology Tianjin 300130 China

The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FTIR), quasi-steady state photoconductance (QSSPCD), optical microscope, spectrum response and solar cell efficiency test. The minority carrier lifetime and performance of solar cell reduced depend on oxygen precipitates. A few of oxygen precipitates have formed after single-step annealing; and they do not impact the efficiency dramatically. Pre-annealing at 650 ℃ for 4 h enhances the oxygen precipitation when it is subjected to middle temperature annealing. The solar cells performance decayed sharply. Especially annealing at 950 ℃ for 3 h, the Vos and Isc of cells decrease 12% and 25% respectively. Few oxygen precipitates have formed in silicon after high temperature annealing at about 1050 ℃ whether pre-annealing is used or not, and the performance of cells is not be affected.

关键词： silicon oxygen precipitate solar cell annealing

胶体金免疫层析法高通量测定动物肌肉组织中多兽药残留

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南京农业大学学报 2024年第5期47卷 967-978页

作者：贾先春周嘉明智军海郝秋艳杨晓芳王玮南京农业大学食品科学技术学院/肉品质量控制与新资源创制全国重点实验室/国家肉品质量安全控制工程技术研究中心/农业农村部肉及肉制品质量检验测试中心(南京) 江苏南京210095 华测检测认证集团股份有限公司北京101102 新疆维吾尔自治区克孜勒苏柯尔克孜自治州农产品质量安全检验检测中心新疆维吾尔自治区克孜勒苏柯尔克孜自治州845350

[目的]本文旨在建立一种胶体金免疫层析技术高通量测定猪肉、鸡肉组织中8种磺胺类、3种四环素类、2种喹诺酮类和甲氧苄啶药物残留的方法。[方法]动物肌肉组织中磺胺类、四环素类、喹诺酮类和甲氧苄啶经磷酸缓冲液提取,并经含Tween 20的... 详细信息

[目的]本文旨在建立一种胶体金免疫层析技术高通量测定猪肉、鸡肉组织中8种磺胺类、3种四环素类、2种喹诺酮类和甲氧苄啶药物残留的方法。[方法]动物肌肉组织中磺胺类、四环素类、喹诺酮类和甲氧苄啶经磷酸缓冲液提取,并经含Tween 20的磷酸缓冲液稀释后,与胶体金标记的单克隆抗体结合,抑制抗体与硝酸纤维素膜检测线(T线)上的抗原结合,从而导致T线颜色变化。通过比较T线和质控线(C线)颜色深浅,对试样中多兽药残留进行定性判定。[结果]本试验优化了pH值、抗体添加量、抗原包被量、Tween 20添加量和冻干保护剂种类等关键因素,磺胺类、四环素类、喹诺酮类和甲氧苄啶等药物的检出限分别为50、100、50、35μg·kg^(-1),灵敏度≥97%,假阳性率≤2%,假阴性率≤3%,且与现有标准方法检测结果一致。[结论]该方法操作简便,灵敏度和准确度高,检测时间短且稳定性好,可用于动物肌肉组织中多兽药残留的高通量快速检测。

关键词：多兽药残留动物肌肉组织胶体金免疫层析法(GICA) 高通量检测

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Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

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Journal of Rare Earths 2006年第Z1期24卷 104-106页

作者： Sun Shilong hao qiuyan Zhao Liwei Teng Xiaoyun Liu Caichi Xu Yuesheng Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China

Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing at 800 ℃ for 4 h and 1000 ℃ for 16 h. RTP temperature and cooling rates were changed from 1200 to 1260 ℃ and from 10 to 100 ℃·s-1, respectively. The experiment results show that high density of oxygen precipitates is observed in heavily Sb-doped wafer. It is found that the oxygen precipitates in heavily Sb-doped silicon are enhanced at high cooling rate.

关键词： oxygen precipitates vacancy RTP, DZ heavily Sb-doped silicon

Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon

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Rare Metals 2006年第4期25卷 389-392页

作者： LIU Caichi hao qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong Qigang Zhou WANG Jing XIAO Qinghua Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China General Re search Institute of Non-ferrous Metals Beijing 100088 China

The morphology and microstructure of flow pattern defects （FPDs） in lightly boron-doped Czochralski-grown silicon （Cz-Si） crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.

关键词： flow pattern defects grown-in defects atomic force microscopy Czochralski-grown silicon

Epitaxial lateral overgrowth of gallium nitride without mask on sapphire

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Epitaxial lateral overgrowth of gallium nitride without mask...

Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon

2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Zhang Wei Liu Caichi hao qiuyan Feng Yuchun Information Function Institude HeBei University of Technology

ISBN: (纸本)1424401607

＜正＞GaN has attracted great interest on the world wide during these *** growth technique such as epitaxial lateral overgrowth（ELO） has been proved to be a very effective way to produce a high-quality GaN layer,so many studies made researches on this *** this work,GaN was deposited on sapphire c side（0001） wafers as the ELO theory without mask by Metal Organic Chemical Vapor Deposition（MOCVD）.The growth mechanism was also analyzed and the properties of GaN layer were investigated by double-crystal X-ray diffraction,atomic force microscopy and wet chemical *** result proved that higher-quality GaN layer was received using this method.

关键词： GaN Epitaxial lateral overgrowth without mask ELO MOCVD c-plane(0001) sapphire substrates

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Journal of Rare Earths 2006年第Z1期24卷 41-44页

作者： Zhao Liwei Liu Caichi Teng Xiaoyun hao qiuyan Sun Shilong Zhang Wei School of Material Science and Engineering Hebei University of TechnologyTianjin 300130China

V defects in GaN layer grown on Si(111)using metalorganic chemical vapor deposition(MOCVD)were investigated by atomic force microscopy(AFM),plan-view transmission electron microscopy(TEM)and energy-dispersive X-ray spectrometer(EDS).Dislocations are the origination of V *** field around dislocations induce the concentration of C atoms,furthermore,slow growth rate on those{10-11}planes are suggested as being responsible for the initiation of V *** formation mechanism of V defects was discussed.

关键词： undoped GaN Vanadium defect dislocation transmission electron microscopy

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浅谈对PPAP的理解及应用

汽车实用技术 2017年第8期14卷 192-193页

作者：郝秋艳陕西法士特齿轮有限责任公司陕西西安710119

文章旨在阐明对PPAP定义的理解,及对重点项目的解释。

关键词：提交时机提交项目 PPAP FMEA PSW

Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon

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北京科技大学学报 2006年第8期28卷 793-793页

作者： LIU Caichi hao qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong QigangZhou WANG Jing XIAO Qinghua Institute of Information Functional Materials Hebei University of Technology Tianjin 300130 China General Research Institute of Non-ferrous Metals Beijing 100088 China

The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.

关键词：流态缺陷微观结构原子力显微镜方法硼掺杂直拉法单晶硅晶体生长

Investigation of the properties of in-line plasma-enhanced chemical vapor deposition silicon nitride after rapid thermal processing

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Investigation of the properties of in-line plasma-enhanced c...