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稀油油藏氮气泡沫抑制边水技术研究

石油矿场机械 2015年第8期44卷 90-92页

作者：胡鹏彭航兵田红燕涂漫闫保梅董兴文张隆国河南油田分公司第一采油厂河南桐柏474780 西南石油大学石油与天然气工程学院四川成都610500

河南油田张店白秋区、下二门Ⅰ断块等稀油藏因边水推进造成含水迅速上升、产量下降快。开展了稀油藏氮气泡沫抑制边水技术研究,包括起泡剂筛选与评价,稳泡剂筛选与评价,氮气泡沫油藏适应性研究,施工工艺参数优化研究。形成了稀油藏氮气... 详细信息

河南油田张店白秋区、下二门Ⅰ断块等稀油藏因边水推进造成含水迅速上升、产量下降快。开展了稀油藏氮气泡沫抑制边水技术研究,包括起泡剂筛选与评价,稳泡剂筛选与评价,氮气泡沫油藏适应性研究,施工工艺参数优化研究。形成了稀油藏氮气泡沫抑制边水工艺技术,在减缓边水浸入的同时实现了油井降水增油的目的。

关键词：稀油油藏氮气泡沫边水起泡剂

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低成本生化浮渣颗粒调剖研究与应用

精细石油化工进展 2015年第3期16卷 15-16,51页

作者：胡士章郑亚妮徐星光樊俊生彭航兵中国石化河南油田油气技术处河南南阳473132 中国石化河南油田第一采油厂河南南阳474780

通过对双河联合站生化浮渣粒径和悬浮性能的分析和评价,以及开展室内填砂管驱替实验研究,设计了低成本生化浮渣颗粒调剖工艺,并在赵凹油田安棚主体区进行了1口井的现场试验。结果表明,注入井调剖前后指标得到改善,对应2口受效油井有效... 详细信息

通过对双河联合站生化浮渣粒径和悬浮性能的分析和评价,以及开展室内填砂管驱替实验研究,设计了低成本生化浮渣颗粒调剖工艺,并在赵凹油田安棚主体区进行了1口井的现场试验。结果表明,注入井调剖前后指标得到改善,对应2口受效油井有效遏制了递减,增油控水效果明显,可为后期开展低成本颗粒调剖提供依据。

关键词：生化浮渣颗粒调剖双河联合站

Frequency dependence on polarization switching measurement in ferroelectric capacitors

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Journal of Semiconductors 2022年第1期43卷 90-94页

作者： Zhaomeng Gao Shuxian Lyu hangbing Lyu Key Laboratory of Microelectronics Device&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

Ferroelectric hysteresis loop measurement under high driving frequency generally faces great *** factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(P_(r))and coercive field(E_(c)).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf_(0.5)Zr_(0.5)O_(2) ferroelectric *** analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE *** considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over *** such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully *** work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

关键词： PUND measurement HfO_(2)-based ferroelectric RC delay

Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications

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Science China(Information Sciences) 2021年第11期64卷 253-254页

作者： Qingting DING Tiancheng GONG Jie YU Xiaoxin XU Xiaoyan LI hangbing LV Jianguo YANG Qing LUO peng YUAN Feng ZHANG Ming LIU Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences

Dear editor,Memristors, resistive random access memory(RRAM) devices when used in memory applications, have attracted significant interest recently as a promising candidate for neuromorphic computing systems due to their excellent size scalability, fast switching speed and low energy consumption [1].In order to obtain high learning accuracy in neural networks based on back propagation learning rule, the updating behavior of synaptic linear symmetric weights is important [2].

关键词： Gate Voltage Ramping (GVR) Constant Drain Voltage (CDV) Time Lag Plot RTN neuromorphic computing

磁性固相萃取-电感耦合等离子体质谱(ICP-MS)法同时检测制革废水多种重金属元素

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皮革与化工 2024年第5期41卷 20-25页

作者：杨精存丁杭冰施亚菁宁波新节检测技术有限公司浙江宁波315000 浙江静远环境科技有限公司浙江宁波315000 宁波中科检测技术服务有限公司浙江宁波315000

采用聚苯胺改性四氧化三铁负载磁性纳米固相萃取材料建立了磁性固相萃取-电感耦合等离子体质谱方法,并将其用于制革废水中微量重金属钴、镉、铜、镍及锌的检测分析。经固相萃取条件优化,在萃取pH值为8和最优洗脱液为5 mL 2 mol/L的硝酸... 详细信息

采用聚苯胺改性四氧化三铁负载磁性纳米固相萃取材料建立了磁性固相萃取-电感耦合等离子体质谱方法,并将其用于制革废水中微量重金属钴、镉、铜、镍及锌的检测分析。经固相萃取条件优化,在萃取pH值为8和最优洗脱液为5 mL 2 mol/L的硝酸溶液时,各重金属的萃取回收率均高于95%,该方法可以耐受较高浓度的共存离子影响。各重金属元素的标准曲线线性关系良好(r>0.999),检出限<0.07μg/L。方法日内精密度、日间精密度分别为2.62%~6.77%和2.75%~6.76%,方法加标回收率为95.55%~107.3%,方法具有优异的精密度和准确度,可应用于制革废水的重金属元素分析。在不同工艺段的实际制革废水重金属检测应用中,废水收集箱、沉淀池、生化处理出水池和氧化出水池等不同工艺段的制革废水重金属均有所检出。

关键词：制革废水重金属磁性固相萃取电感耦合等离子体质谱法

Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing

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Science China(Physics,Mechanics & Astronomy) 2018年第8期61卷 75-81页

作者： Qi Liu XuMeng Zhang Qing LUO XiaoLong Zhao hangbing Lv ShiBing Long Ming Liu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

Memristor based artificial synapses have demonstrated great potential for bioinspired neuromorphic computing in recent years. To emulate synaptic fimctions, such as short-term plasticity and long-term potentiation/depression, square pulses or combined complex pulse groups are applied on the device. However, in biological neuron systems, the action potentials are analog pulses with similar amplitudes. Furthermore, in biological systems, the intensity of the stimulus is coded into the frequency of action potentials to modulate the weight of synapses. Toward this programming method, we applied a series of analog spiking pulses with same peaks on Ru/TiOJTiN 3D memristor to emulate synaptic functions, such as long-term potentiation/depression and synaptic saturation. Moreover, we demonstrated the conductance change of the device under different stimulus frequencies of analog spiking pulses and described the statistical results of conductance change value, which shows that the device conductance has a larger change value under a higher spiking frequency with identical pulse number. These results show that the analog spiking pulses can well modulate the memristor-based synaptic weight and have a great potential for bioinspired computing in the future.

关键词： 3D memristor analog spiking pulses artificial synapse spiking frequency

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稳定碳蜂窝结构热输运性质研究

工程热物理学报 2024年第9期45卷 2779-2784页

作者：赵冬蕾张晓威白昊刘小闯张腾飞刘航冰韩洋哈尔滨工程大学青岛创新发展基地青岛266000

近年来,通过实验合成的碳蜂窝结构因其力学强度大、热导率高、重量轻等特点受到了科学界广泛关注。在本工作中,我们利用非平衡分子动力学方法研究了近期提出的一种稳定碳蜂窝结构(hC28)的热输运性质。结果表明,该结构沿蜂窝轴方向热导... 详细信息

近年来,通过实验合成的碳蜂窝结构因其力学强度大、热导率高、重量轻等特点受到了科学界广泛关注。在本工作中,我们利用非平衡分子动力学方法研究了近期提出的一种稳定碳蜂窝结构(hC28)的热输运性质。结果表明,该结构沿蜂窝轴方向热导率远高于垂直于蜂窝轴方向的热导率,具有各向异性特征。此外,随着温度的升高,高阶声子间散射增强,模型的热导率逐渐降低。本文的研究结果对于开发碳蜂窝结构作为热传导器件具有一定的指导意义。

关键词：碳蜂窝热导率非平衡态分子动力学模拟

Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano- crossbar memory array

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Nano Research 2017年第10期10卷 3295-3302页

作者： Qing Luo Xiaoxin Xu hangbing Lv Tiancheng Gong Shibing Long Qi Liu Ling Li Ming Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 211800 China

Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the ＂sneaking current problem＂, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaOx-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density （1 MA·cm^-2）, high selectivity （5 × 10^4）, low off-state current （-10 pA）, robust endurance （〉10^10）, self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor （1S1R） device exhibits high nonlinearity in the low resistance state （LRS）, which is quite effective in solving the sneaking current issue.

关键词： crossbar array selector trapezoidal barrier gradient oxygenconcentration high uniformity

Analysis of tail bits generation of multilevel storage in resistive switching memory

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Chinese Physics B 2018年第11期27卷 626-629页

作者： Jing Liu Xiaoxin Xu Chuanbing Chen Tiancheng Gong Zhaoan Yu Qing Luo peng Yuan Danian Dong Qi Liu Shibing Long hangbing Lv Ming Liu School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 China Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observed, depending on the filament morphology after the SET/RESET operation.（i） Tail bits resulting from lateral diffusion of Cu ions introduced an abrupt increase of device resistance from IRS to ultrahigh-resistance state, which mainly happened in IRSS.（ii） Tail bits induced by the vertical diffusion of Cu ions showed a gradual shift of resistance toward lower value. Statistical results show that more than 95% of tail bits are generated in IRSS. To achieve a reliable IRS for multilevel cell（MLC） operation, it is desirable to program the IRS in RESET operation. The mechanism of tail bit generation that is disclosed here provides a clear guideline for the data retention optimization of MLC resistive random-access memory cells.

关键词： resistive random-access memory (RRAM) multilevel cell tail bits