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Enhancement of hydroxyapatite dissolution through structure modification by Krypton ion irradiation

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Journal of Materials Science & Technology 2020年第3期38卷 148-158页

作者： Hui Zhu Dagang Guo hang zang Dorian AHHanaor Sen Yu Franziska Schmidt Kewei Xu State Key Laboratory for Mechanical Behavior of Materials School of Material Science and EngineeringXi’an Jiaotong UniversityXi’an710049China School of Nuclear Science and Technology Xi’an Jiaotong UniversityXi’an710049China Fachgebiet Keramische Werkstoffe/Chair of Advanced Ceramic Materials Institut für Werkstoffwissenschaften und-TechnologienTechnische Universit?t BerlinHardenbergstra?e 4010623BerlinGermany Shaanxi Key Laboratory of biomedical metal materials Northwest Institute for Non-ferrous Metal ResearchXi’an710016China

Hydroxyapatite(HA)synthesized by a wet chemical route was subjected to heavy ion irradiation,using4 Me V Krypton ion(Kr17+)with ion fluence ranging from 1×1013 to 1×1015 ions/*** incidence X-ray diffraction(GIXRD)results confirmed the phase purity of irradiated HA with a moderate contraction in lattice parameters,and further indicated the irradiation-induced structural disorder,evidenced by broadening of the diffraction ***-resolution transmission electron microscopy(HRTEM)observations indicated that the applied Kr irradiation induced significant damage in the hydroxyapatite ***,cavities were observed with their diameter and density varying with the irradiation fluences,while a radiation-induced crystalline-to-amorphous transition with increasing ion dose was *** and X-ray photoelectron spectroscopy(XPS)analysis further indicated the presence of irradiationinduced *** release from pristine and irradiated materials following immersion in Tris(p H 7.4,37?)buffer showed that dissolution in vitro was enhanced by irradiation,reaching a peak at 0.1 *** examined the effects of irradiation on the early stages of the mouse osteoblast-like cells(MC3 T3-E)response.A cell counting kit-8 assay(CCK-8 test)was carried out to investigate the cytotoxicity of samples,and viable cells can be observed on the irradiated materials.

关键词： High energy heavy ion irradiation Hydroxyapatite HRTEM Crystal defects In vitro dissolution Cell compatibility

Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

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Light(Science & Applications) 2021年第4期10卷 671-680页

作者： Ke Jiang Xiaojuan Sun Zhiming Shi hang zang Jianwei Ben Hui-Xiong Deng Dabing Li State Key Laboratory of Lum inescence and Applications Changchun Institute of OpticsRne Mechanics and PhysicsChinese Academy of SciencesDongnanhu Road No.3888Changchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesYuquan Road No.19Beijing 100049China State Key Laboratory of Superlattices and M icrostruaures Institute of SemiconductorsChinese Academy of SciencesQinghuadong Road No.35Beijing 100083China

Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their tunable wide band-gap,high breakdown field and energy density,excellent chemical and thermal ***,their application has been severely hindered by the low p-doping efficiency,which is ascribed to the ultrahigh acceptor activation energy originated from the low valance band ***,a valance band modulation mode is proposed and a quantum engineering doping method is conducted to achieve high-efficient p-type ultra-wide band-gap nitrides,in which GaN quantum-dots are buried in nitride matrix to produce a new band edge and thus to tune the dopant activation *** non-equilibrium doping techniques,quantum engineering doped AIGaN:Mg with Al content of 60%is successfully *** Mg activation energy has been reduced to about 21 meV,and the hole concentration reaches higher than 10^(18)cm^(-3)at room ***,similar activation energies are obtained in AIGaN with other Al contents such as 50%and 70%;indicating the universality of the quantum engineering doping ***,deep-ultraviolet light-emission diodes are fabricated and the improved performance further demonstrates the validity and merit of the *** the quantum material growth techniques developing,this method would be prevalently available and tremendously stimulate the promotion of ultra-wide band-gap semiconductor-based devices.

关键词： doping breakdown quantum

Soft error reliability in advanced CMOS technologies—trends and challenges

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Science China(Technological Sciences) 2014年第9期57卷 1846-1857页

作者： TANG Du HE ChaoHui LI YongHong zang hang XIONG Cen Zhang JinXin School of Nuclear Science and Technology Xi'an Jiaotong University

With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS *** this paper,we review the evolution of two main aspects of soft error-SEU and SET,including the new mechanisms to induced SEUs,the advances of the MCUs and some newly observed phenomena of the *** mechanisms and the trends with downscaling of these issues are briefly *** also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing,modeling and hardening assurance of soft error issues we have to address in the future.

关键词： soft error rate direct ionization indirect ionization multiple errors single event transient hardening challenges

Evaluation of interfacial properties in SiC composites using an improved cohesive element method

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Nuclear Science and Techniques 2018年第2期29卷 82-90页

作者： hang zang Xing-Qing Cao Chao-Hui He Zhi-Sheng Huang Yong-Hong Li School of Nuclear Science and Technology Xi'an Jiaotong University

A two-dimensional axisymmetric finite element model based on an improved cohesive element method was developed to simulate interfacial debonding, sliding friction, and residual thermal stresses in SiC composites during single-fiber push-out tests to extract the interfacial bond strength and frictional stress. The numerical load–displacement curves agree well with experimental curves,indicating that this cohesive element method can be used for calculating the interfacial properties of SiC *** simulation results show that cracks are most likely to occur at the ends of the experimental sample, where the maximum shear stress is observed and that the interfacial shear strength and constant sliding friction stress decrease with an increase in temperature. Moreover, the load required to cause complete interfacial failure increases with the increase in critical shear strength, and the composite materials with higher fiber volume fractions have higher bearing capacities. In addition, the initial failure load increases with an increase in interphase thickness.

关键词： Fiber push-out test Cohesive element model SiC composites Finite element method Interfacial properties

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

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Science China(Physics,Mechanics & Astronomy) 2007年第3期50卷 281-286页

作者： PENG XingPing WANG ZhiGuang SONG Yin JI Tao zang hang YANG YingHu JIN YunFan Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China School of Physics Science and Technology Lanzhou UniversityLanzhou 730000China

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300–400°C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.

关键词： ZnO films XRD spectra PL spectra substrate temperature RF reactive sputtering

Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation

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Science China(Technological Sciences) 2020年第5期63卷 851-858页

作者： WEI JiaNan LI Yang YANG WeiTao HE ChaoHui LI YongHong zang hang LI Pei Zhang JinXin GUO Gang School of Nuclear Science and Technology Xi’an Jiaotong UniversityXi’an 710049China School of Aerospace Science and Technology Xidian UniversityXi’an 710126China National Innovation Center of Radiation Application China Institute of Atomic EnergyBeijing 102413China

The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor(SiGe HBT).The temporal information of the proton-induced current transients is first measured and then compared with results from heavy ion microbeam ***,a model for proton-induced charge collection based on Geant4 Monte Carlo simulation tools is constructed by using the information from heavy ion experiment and 3D TCAD *** results obtained by the validated model exhibit good consistency with the proton experiment.

关键词： silicon-germanium HBT proton irradiation single event transient charge collection model

Tunable piezoelectric and ferroelectric responses of Al1-xScxN:The role of atomic arrangement

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Science China(Physics,Mechanics & Astronomy) 2023年第7期66卷 142-148页

作者： hang zang Zhiming Shi Mingrui Liu Yuping Jia Ke Jiang Jianwei Ben Yang Chen Shunpeng Lv Xiaojuan Sun Dabing Li State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

In this study,we present first-principles investigations of the atomic structure of Al_(1-x)Sc_(x)N and its influence on its piezoelectric and ferroelectric *** unbiased structure searching revealed that Al_(1-x)Sc_(x)N with phase separation feature,where Al N and Sc N form a layered structure with different symmetries,is more stable than the corresponding wurtzite *** piezoelectric response of Al_(1-x)Sc_(x)N is strongly dependent on the atomic arrangements;in particular,Al_(0.5)Sc_(0.5)N with a wurtzite structure exhibits a large positive e33of 4.79 C/m^(2),whereas Al_(0.5)Sc_(0.5)N with a phase separation structure exhibits a negative e33of-0.67 C/m^(2).Moreover,the ferroelectric switching of Al_(1-x)Sc_(x)N demonstrated two distinct pathways for the wurtzite and phase separation structures,and the spontaneous polarization thus calculated exhibits entirely different ***,we demonstrated that Al_(1-x)Sc_(x)N with a phase separation structure exhibits a low polarization switching barrier of 0.15 e V/*** a large spontaneous polarization of-0.77 C/m^(2);thus,it can serve as a novel Al_(1-x)Sc_(x)N-based ferroelectric *** the dipoles in Al_(1-x)Sc_(x)N with a phase separation structure are localized in the AlN region,they are individually switchable at no domain wall energy cost and are stable against extrinsic effects.

关键词： AIS_(c)N piezoelectric ferroelectric density functional theory

Structural stability of C_(60) films under the bombardment of 1.95 GeV Kr ions

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Chinese Science Bulletin 2010年第31期55卷 3533-3537页

作者： YAO CunFeng FU YunChong JIN YunFan WANG ZhiGuang zang hang WEI KongFang GOU Jie MA YiZhun SHEN TieLong Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China Graduate University of Chinese Academy of Sciences Beijing 100049 China Institute of Earth Environment Chinese Academy of Sciences Xi'an 710075 China

The structural stability of C60 films under the bombardment of 1.95 GeV Kr ions is *** irradiated C60 films were analyzed by Fourier Transform Infrared(FTIR) spectroscopy and Raman scattering *** analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C60 molecule and damage of C60 films;different vibration modes of C60 molecule have different irradiation sensitivities;the mean efficient damage radius obtained from experimental data is about 1.47 nm,which is in good agreement with thermal spike model prediction.

关键词： C60薄膜离子轰击结构稳定性傅立叶变换红外光谱 C60分子伏特电子氪

Optical Investigation of Cu-doped ZnO Films

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近代物理研究所和兰州重离子加速器实验室年报：英文版 2006年第1期 70-71页

作者： Peng Xingping zang hang Wang Zhiguang Jin Yunfan Song Yin Supported by Chinese Academy of Sciences.