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Multiple Matching Attenuation Based on Curvelet Domain Extended Filtering

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Journal of Ocean University of China 2024年第4期23卷 924-932页

作者： HUA Qingfeng chen Zhang HE Huili TAN Jun chen haifeng LI Guanbao SONG Peng ZHAO Bo JIANG Xiuping Key Laboratory of Marine Geology and Metallogeny First Institute of OceanographyMinistry of Natural ResourcesQingdao 266061China Laboratory for Marine Mineral Resources Qingdao Marine Science and Technology CenterQingdao 266237China College of Marine Geoscience Ocean University of ChinaQingdao 266100China BGP Inc. China National Petroleum CorporationZhuozhou 072750China Key Laboratory of Submarine Geosciences and Prospecting Techniques Ministry of EducationQingdao 266100China

The paper develops a multiple matching attenuation method based on extended filtering in the curvelet domain,which combines the traditional Wiener filtering method with the matching attenuation method in curvelet ***,the method uses the predicted multiple data to generate the Hilbert transform records,time derivative records and time derivative records of Hilbert ***,the above records are transformed into the curvelet domain and multiple matching attenuation based on least squares extended filtering is ***,the attenuation results are transformed back into the time-space *** on the model data and field data show that the method proposed in the paper effectively suppress the multiples while preserving the primaries ***,it has higher accuracy in eliminating multiple reflections,which is more suitable for the multiple attenuation tasks in the areas with complex structures compared to the time-space domain extended filtering method and the conventional curvelet transform method.

关键词： multiple matching attenuation curvelet domain extended filtering

10 × 10 Ga_(2)O_(3)-based solar-blind UV detector array and imaging characteristic

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Journal of Semiconductors 2024年第9期45卷 61-69页

作者： haifeng chen Zhanhang Liu Yixin Zhang Feilong Jia chenlu Wu Qin Lu Xiangtai Liu Shaoqing Wang Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi’an University of Posts andT elecom-municationsXi’an 710121China

A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-todark current ratio(PDCR) of 5.5 × 10^(5), responsivity(R) of 4.28 A/W, external quantum efficiency(EQE) of 2.1 × 10^(3)%, detectivity(D*) of 1.5 × 10^(14) Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 ℃, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga_(2)O_(3) solarblind UV detectors.

关键词： Ga_(2)O_(3) solar-blind ultraviolet photodetector array photo-to-dark current ratio

Preparation and characteristic study of Schottky diodes based on Ga_(2)O_(3)thin films

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The Journal of China Universities of Posts and Telecommunications 2024年第2期31卷 28-37页

作者： Zhang Xuhui chen haifeng Liu Xiangtai Lu Qin Wang Zhan cheng Hang Che Lujie Guan Youyou Han Xiaocong School of Electronic Engineering Xi'an University of Posts and TelecommunicationsXi'an 710121China

This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film *** diode devices are fabricated based on the grown Ga_(2)O_(3)films,and the effects of annealing temperature,electrode size,and electrode spacing on the electrical characteristics of the devices are *** results show that as the film thickness increases,the breakdown voltage of the fabricated devices also increases.A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 *** film quality significantly improves as the annealing temperature of the film *** a voltage of 5 V,the current of the film annealed at 900℃is 64 times that of the film annealed at 700℃.The optimum annealing temperature for Ohmic contact electrodes is 450℃.At 550℃,the Ohmic contact metal tends to burn,and the performance of the device is *** the electrode spacing increases the forward current of the device but decreases the reverse breakdown *** the Schottky contact electrode size increases the forward current,but the change is not significant,and there is no significant change in the reverse breakdown *** device also performs well at high temperatures,with a reverse breakdown voltage of 220 V at 125℃.

关键词： atomic layer deposition(ALD) Ga_(2)O_(3)film Schottky diode annealing temperature

Performance study of vertical MSM solar-blind photodetectorsbased onβ-Ga_(2)O_(3)thin film

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The Journal of China Universities of Posts and Telecommunications 2024年第2期31卷 17-27页

作者： chen haifeng Che Lujie Lu Qin Wang Shaoqing Liu Xiangtai Liu Zhanhang Guan Youyou Zhao Xu cheng Hang Han Xiaocong Zhang Xuhui School of Electronic Engineering Xi'an University of Posts and TelecommunicationsXi'an 710121China

In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grownβ-Ga_(2)O_(3)thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and *** PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7×10^(6),and ultra-high detectivity of 4.25×10^(14)Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1000 times and 100 times,*** addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67×10^(4)%,and also exhibit robustness and repeatability,which indicate excellent *** the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.

关键词： Ga_(2)O_(3) atomic layer deposition(ALD) annealing vertical metal-semiconductor-metal(MSM)interdigital photodetectors

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Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

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Journal of Semiconductors 2024年第5期45卷 90-98页

作者： haifeng chen Xiaocong Han chenlu Wu Zhanhang Liu Shaoqing Wang Xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi’an University of Posts andT elecommunicationsXi’an 710121China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction *** on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was *** to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single *** the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light *** the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation *** V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)*** addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative *** shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关键词： β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device

Preparation and characteristic study of Schottky diodes based on GaOthin films

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The Journal of China Universities of Posts and Telecommunications 2024年

作者： Zhang Xuhui chen haifeng Liu Xiangtai Lu Qin Wang Zhan cheng Hang Che Lujie Guan Youyou Han Xiaocong School of Electronic Engineering， Xi’an University of Posts and Telecommunications

This study uses atomic layer deposition (ALD) to grow Ga2O3films on SiO2substrates and investigates the influence of film thickness and annealing temperature on film quality. Schottky diode devices are fabricated based on the grown Ga2O3films， and the effects of annealing temperature， electrode size， and electrode spacing on the electrical characteristics of the devices are studied. The results show that as the film thickness increases， the breakdown voltage of the fabricated devices also increases. A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 V. The film quality significantly improves as the annealing temperature of the film increases. At a voltage of 5 V， the current of the film annealed at 900℃ is 64 times that of the film annealed at 700℃. The optimum annealing temperature for Ohmic contact electrodes is 450℃. At 550℃， the Ohmic contact metal tends to burn， and the performance of the device is reduced. Reducing the electrode spacing increases the forward current of the device but decreases the reverse breakdown voltage. Increasing the Schottky contact electrode size increases the forward current， but the change is not significant， and there is no significant change in the reverse breakdown voltage. The device also performs well at high temperatures， with a reverse breakdown voltage of 220 V at 125℃.

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The Early-Middle Triassic Supervolcano in the Yangtze Block,South China and associated obstacles to biotic recovery

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Geoscience Frontiers 2024年第1期15卷 69-83页

作者： haifeng chen Hao Zou MSantosh Huawen Cao Franco Pirajno Changcheng Huang Mingcai Hou State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation Chengdu University of TechnologyChengduSichuan 610059China College of Earth Science Chengdu University of TechnologyChengduSichuan 610059China School of Earth Sciences and Resources China University of GeosciencesBeijing 100083China Department of Earth Science University of AdelaideAdelaideSA 5005Australia Yonsei Frontier Lab Yonsei UniversitySeoulSouth Korea Centre of Exploration Targeting The University of Western Australia35 Stirling HighwayCrawleyWA 6009Australia

The end-Permian mass extinction was one of the major global crises spanning the entire Early Triassic or *** of volcanos were one of the factors that delayed the biotic recovery after this *** eruptions can cause catastrophic effects on global environment,climate,and *** we investigate the tuff layers from Early-Middle Triassic boundary in the Yangtze Block and identify a supervolcano eruption *** zircon U-Pb ages of the section-Langdai,section-Daijiagou and section-Longmendong tuff samples are 247.1±1.9 Ma,247.6±2.0 Ma and 247.7±1.7 Ma,*** ages mark the Olenekian-Anisian *** zircon grains from the tuff layers have negativeεHf(t)(-15.3 to-0.8),two-stage Hf model(TDM2)ages(1.7 to 2.2 Ga)and display high-δ18O values(mostly>10‰).Clay minerals and quartz dominate the rock *** whole rock compositions show that the tuff layers were derived from magma of intermediate to felsic composition,which formed by the remelting of Paleoproterozoic materials of continental *** volcanic eruption site is located in the Jinshajiang-Ailaoshan-Song Ma suture zone in the southwestern margin of the Yangtze Block.A combination of the closure of the Paleo-Tethys Ocean Basin and the collision of the Indochina Block and South China contributed to the eruption,which was a supervolcano eruption under the active continental margin arc *** speculate that this supervolcano eruption might have contributed to the delayed biotic recovery after the end-Permian mass extinction.

关键词： Early-Middle Triassic Tuff layer Supervolcano Yangtze Block Biotic recovery

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检察机关介入职务犯罪调查的监督性

法学家 2024年第3期 114-127,194页

作者：陈海锋上海社会科学院法学研究所

为了配合监察调查以提高案件办理质量,我国建立了监察机关商请检察机关介入职务犯罪调查的新机制。由于缺乏明确的检察监督监察的制度性规定,这种以监检配合为主要目的的机制是否具有监督属性,在此问题上出现了争议,也使检察机关的介入... 详细信息

为了配合监察调查以提高案件办理质量,我国建立了监察机关商请检察机关介入职务犯罪调查的新机制。由于缺乏明确的检察监督监察的制度性规定,这种以监检配合为主要目的的机制是否具有监督属性,在此问题上出现了争议,也使检察机关的介入陷入较为尴尬的境地。检察介入侦查与介入调查没有实质性差异,介入侦查的监督目的也应体现在介入调查中,以免影响监察程序法治与国家机关的权威。从对监察调查的监督看,目前已经确立的各种形式体现了对刑事办案权力监督的普遍性,但程序外的监督法律支撑不足、程序内的监督缺陷明显,需要更为及时的监督形式作为补充。作为维护法制统一的法律监督机关,检察机关监督监察权具有必要性,而检察介入调查机制的确立则为这种监督提供了可能,应当明确这种介入机制具有监督性质。

关键词：监察调查提前介入侦查监督检察监督

碳改性纳米零价铁对水中六价铬的强化吸附还原研究

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安全与环境学报 2024年第1期24卷 353-360页

作者：陈海峰张路萍江苏省农药废水处理及资源化利用工程研究中心南通职业大学药品与环境工程学院江苏南通226007

纳米零价铁材料因其还原性强的特点而多用于水中Cr(Ⅵ)污染治理。以葡萄糖和氯化铁为原料,通过碳化煅烧还原,制备碳改性纳米零价铁复合材料(nZVI@GC)。材料形貌及结构性质的分析显示,nZVI@GC上纳米零价铁为体心立方的α-Fe^(0),且颗粒... 详细信息

纳米零价铁材料因其还原性强的特点而多用于水中Cr(Ⅵ)污染治理。以葡萄糖和氯化铁为原料,通过碳化煅烧还原,制备碳改性纳米零价铁复合材料(nZVI@GC)。材料形貌及结构性质的分析显示,nZVI@GC上纳米零价铁为体心立方的α-Fe^(0),且颗粒分散均匀,平均粒径为32 nm。批处理试验显示,24 h内nZVI@GC对水体中Cr(Ⅵ)的吸附还原质量比为178.6 mg/g,是纳米零价铁(nZVI)的5.7倍,且吸附还原反应符合准二级动力学模型(R^(2)=0.9993)。其中,在pH值为2~3,Cr(Ⅵ)的初始质量浓度为50 mg/L,纳米零价铁的投加质量浓度为0.5 g/L的条件下,nZVI@GC可在30 min内完全吸附还原水中的Cr(Ⅵ)。在干燥空气中无保护存放nZVI@GC时,复合材料上的碳可以有效抑制氧气对纳米零价铁的侵蚀。与新制备材料相比,30 d后nZVI@GC对水中Cr(Ⅵ)的吸附还原率仅下降3.4%。nZVI@GC为材料高效、经济地吸附还原水中Cr(Ⅵ)提供了一种选择。

关键词：环境工程学六价铬纳米零价铁碳基材料吸附还原