检索结果-南通市图书馆

Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications

引用

Nano-Micro Letters 2024年第10期16卷 15-30页

作者： Liuan Li Shi Fang Wei Chen Yueyue Li Mohammad Fazel Vafadar Danhao Wang Yang Kang Xin Liu Yuanmin Luo Kun Liang Yiping Dang Lei Zhao Songrui Zhao Zongzhi Yin haiding sun iGaN Laboratory School of MicroelectronicsUniversity of Science and Technology of ChinaHefei 230026People's Republic of China Department of Obstetrics and Gynecology The First Affiliated Hospital of Anhui Medical UniversityNo 218 Jixi RoadHefei 230022People's Republic of China Department of Electrical and Computer Engineering McGill University3480 University StreetMontrealQC H3A 0E9Canada Union Hospital Tongji Medical CollegeHuazhong University of Science and TechnologyNo 1277 Jiefang Ave.Wuhan 430022People's Republic of China

Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of *** particular,emerging photoelectrochemical(PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating ***,a PEC-type photosensor was carefully designed and constructed by employing gallium nitride(GaN)p-n homojunction semiconductor nanowires on silicon,with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide(CoNiO_(x)).Essentially,the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface,while CoNiO_(x)decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte ***,the constructed photosensor achieves a high responsivity of 247.8 mA W^(-1)while simultaneously exhibiting excellent operating ***,based on the remarkable stability and high responsivity of the device,a glucose sensing system was established with a demonstration of glucose level determination in real human *** work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.

关键词： p-n GaN nanowires Strategic p-doping Surface decoration Photoelectrochemical sensor Glucose sensing

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Advanced RF filters for wireless communications

引用

Chip 2023年第4期2卷 1-26页

作者： Kai Yang Chenggong He Jiming Fang Xinhui Cui haiding sun Yansong Yang Chengjie Zuo School of Microelectronics University of Science and Technology of ChinaHefei 230088China YUNTA Technologies and ANUKI Technologies Hefei 230088China Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong Kong 999077China

This paper provides a comprehensive review of advanced radio fre-quency(RF)filter technologies available in miniature chip or inte-grated circuit(IC)form for wireless communication *** RF filter technologies were organized according to the time-line of their introduction,in conjunction with each generation of wireless(cellular)communication standards(1G to 5G).This ap-proach enabled a clear explanation of the corresponding invention history,working principles,typical applications and future develop-ment *** article covered commercially successful acoustic filter technologies,including the widely used surface acoustic wave(SAW)and bulk acoustic wave(BAW)filters,as well as electromag-netic filter technologies based on low-temperature co-fired ceramic(LTCC)and integrated passive device(IPD).Additionally,emerg-ing filter technologies such as IHP-SAW,suspended thin-film lithium niobate(LiNbO3 or LN)resonant devices and hybrid were also *** order to achieve higher performance,smaller form factor and lower cost for the wireless communication industry,it is believed that fundamental breakthroughs in materials and fabrication tech-niques are necessary for the future development of RF filters.

关键词： RF filter Acoustic wave Piezoelectric Electromagnetic Hy-brid

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers

引用

Science China(Information Sciences) 2023年第8期66卷 254-262页

作者： Haochen ZHANG Yue sun Kunpeng HU Lei YANG Kun LIANG Zhanyong XING Hu WANG Mingshuo ZHANG Huabin YU Shi FANG Yang KANG haiding sun School of Microelectronics University of Science and Technology of China

Wide bandgap GaN-based HEMTs have shown great potential as key components in various power electronic systems but still face challenges in the pursuit of devices with stable operation capability especially in harsh environments. Here, we report a high-performance double heterojunction(DH) based Al Ga N/Ga N HEMT by incorporating a decreasing-Al-composition(DAC) graded Al Ga N back barrier(BB)beneath the Ga N channel. Thanks to the improved electron confinement enabled by graded BB, the DHHEMT exhibits significantly improved on-state drain current density and off-state breakdown voltage compared with a single heterojunction(SH) based HEMT. More intriguingly, with an additional Si Nx passivation layer, the surface states of the DH-HEMTs can be effectively suppressed, leading to an almost constant offstate leakage current and negligible gate contact degradation across the temperature range from 25℃ to 150℃. These results highlight the superiority and reliability of the proposed graded AlGaN BB to boost device characteristics for applications under high temperatures and harsh conditions.

关键词： AlGaN/GaN HEMT graded AlGaN back barrier SiN$_x$ passivation DHHEMT high temperature stability

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

引用

Photonics Research 2018年第5期6卷 457-462页

作者： RONGHUI LIN SERGIO VALDES GALAN haiding sun YANGRUI HU MOHD SHARIZAL ALIAS BILAL JANJUA TIEN KHEE NG BOON S.OOI XIAOHANG LI Advanced Semiconductor Laboratory King Abdullah University of Science and Technology (KAUST) Photonics Laboratory King Abdullah University of Science and Technology (KAUST)

A nanowire （NW） structure provides an alternative scheme for deep ultraviolet light emitting diodes （DUV-LEDs） that promises high material quality and better light extraction efficiency （LEE）. In this report, we investigate the influence of the tapering angle of closely packed AIGaN NWs, which is found to exist naturally in molecular beam epitaxy （MBE） grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic （TM） and transverse elec- tric （TE） polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.

关键词： Tapering-induced enhancement light extraction efficiency of nanowire deep ultraviolet LED theoretical simulations

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Observation of polarity-switchable photoconductivity in lInitride/MoS_(x)core-shell nanowires

引用

Light(Science & Applications) 2022年第11期11卷 2633-2645页

作者： Danhao Wang Wentiao Wu Shi Fang Yang Kang Xiaoning Wang Wei Hu Huabin Yu Haochen Zhang Xin Lu Yuanmin Luo Jr-Hau He Lan Fu Shibing Long Sheng Liu haiding sun School of Microelectronics University of Science and Technology of ChinaHefei 230029China Hefei National Laboratory for Physical Sciences at the Microscale Department of Chemical PhysicsUniversity of Science and Technology of ChinaHefei 230029China Department of Materials Science and Engineering City University of Hong KongKowloonHong Kong SAR 999077China Department of Electronic Materials Engineering Research School of Physics and EngineeringThe Australian National UniversityCanberraACT 2601Australia School of Microelectronics Wuhan UniversityWuhan 430072China The CAS Key Laboratory of Wireless Optical Communications University of Science and Technology of ChinaHefei 230029China

Ⅱ-Ⅴsemiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic ***,solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic *** leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires,new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional ***,we combine high-crystal-quality lInitridle nanowires with amorphous molybdenum sulfides(a-MoS)to construct ***/a-MoS_(x) core-shell *** light ilumination,such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment,demonstrating a negative photoresponsivity of-100.42 mA W^(-1)under 254 nm ilumination,and a positive photoresponsivity of 29.5 mA W^(-1)under 365 nm *** functional theory calculations reveal that the successful surface modifcation of the nanowires via a-MoS_(x)decoration accelerates the reaction process at the electrolyte/nanowire interface,leading to the generation of opposite photocurrent signals under different photon *** importantly,such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition,showing great promise to build light-wavelength controllable sensing devices in the future.

关键词： nanowires versatile striking

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Cascaded deep ultraviolet light-emitting diode via tunnel junction

引用

Chinese Optics Letters 2021年第8期19卷 95-99页

作者： Huabin Yu Zhongjie Ren Muhammad Hunain Memon Shi Fang Danhao Wang Zhongling Liu Haochen Zhang Feng Wu Jiangnan Dai Changqing Chen haiding sun School of Microelectronics University of Science and Technology of ChinaHefei 230026China Department of Electrical and Computer Engineering University of California San DiegoLa JollaCA 92037USA Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China

The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based ***,the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power,which seriously hinder their *** this work,we design and report a tunnel-junctioncascaded(TJC)DUV LED,which enables multiple radiative recombinations within the active ***,the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV ***,the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25%at 60 m A.

关键词： deep ultraviolet LED tunnel junction wall-plug efficiency AlGaN

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

智能型动态功率因数监测与补偿系统

引用

现代电子技术 2007年第17期30卷 133-136,140页

作者：孙海定邴林林华中科技大学电工电子科技创新中心湖北武汉430074

描述了基于单片机为控制核心的低电压动态功率因数监测与补偿系统。该系统将MOC3041与可控硅BT137结合作为补偿电容投入的控制开关,同时利用MOC3041内部的过零比较器来实现延时控制作用,成功解决了补偿电容投入时可能产生的电流冲击问... 详细信息

描述了基于单片机为控制核心的低电压动态功率因数监测与补偿系统。该系统将MOC3041与可控硅BT137结合作为补偿电容投入的控制开关,同时利用MOC3041内部的过零比较器来实现延时控制作用,成功解决了补偿电容投入时可能产生的电流冲击问题。在软件上采用PWM技术,控制"开关"通断时间及频率来改变补偿电容投入时的等效电容量,使补偿电容量连续可调。该电容补偿技术很好地实现了对当前电路稳定、可靠、精确的检测和控制。

关键词：单片机功率因数补偿 PWM

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

单电子晶体管的蒙特卡罗模拟及宏观建模(英文)

引用

微纳电子技术 2008年第4期45卷 198-204页

作者：孙海定江建军华中科技大学电子科学与技术系武汉430074

以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。微观模拟与宏观建模相结合,着重介绍了如何用蒙特卡罗方法和Matlab相结合对上述各种物理现象进行数值模拟,同时对单电子晶体管进行宏观电路等... 详细信息

以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。微观模拟与宏观建模相结合,着重介绍了如何用蒙特卡罗方法和Matlab相结合对上述各种物理现象进行数值模拟,同时对单电子晶体管进行宏观电路等效,用一些常用元器件进行宏观建模。采用强大的模拟集成电路软件Hspice进行分析模拟,大大减少了计算及仿真时间。通过分析比较,两者曲线得到了较好的吻合,直观地反映了单电子晶体管的电学特性,为进一步研究复杂系统提供了理论依据。

关键词：单电子晶体管单电子隧穿库仑阻塞库仑台阶蒙特卡罗 Hspice

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

A 10×10 deep ultraviolet light-emitting micro-LED array

引用

Journal of Semiconductors 2022年第6期43卷 40-45页

作者： Huabin Yu Muhammad Hunain Memon Hongfeng Jia Haochen Zhang Meng Tian Shi Fang Danhao Wang Yang Kang Shudan Xiao Shibing Long haiding sun School of Microelectronics University of Science and Technology of ChinaHefei 230026China

In this work,we design and fabricate a deep ultraviolet(DUV)light-emitting array consisting of 10×10 micro-LEDs(μ-LEDs)with each device having 20μm in ***,the array demonstrates a significant enhancement of total light output power by nearly 52%at the injection current of 100 mA,in comparison to a conventional large LED chip whose emitting area is the same as the array.A much higher(~22%)peak external quantum efficiency,as well as a smaller efficiency droop forμ-LED array,was also *** numerical calculation reveals that the performance boost can be attributed to the higher light extraction efficiency at the edge of eachμ-***,the far-field pattern measurement shows that theμ-LED array possesses a better forward directionality of *** findings shed light on the enhancement of the DUV LEDs performance and provide new insights in controlling the light behavior of theμ-LEDs.

关键词： AlGaN deep ultraviolet micro-LED array light extraction efficiency

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

原子层沉积二氧化钛提高氮化镓纳米线的光电化学光探测稳定性

引用

中国科学技术大学学报 2022年第1期52卷 14-19,I0003页

作者：康阳刘鑫汪丹浩方师罗远旻孙海定中国科学技术大学微电子学院安徽合肥230026

紫外光探测在光通信、化学与生物相关传感应用中发挥着重要作用。基于氮化镓纳米线的光电化学光探测器以其自供能、环境敏感等特性受到广泛关注。然而,氮化镓纳米线在光电化学环境中易受到光腐蚀,极不稳定。为了提高氮化镓纳米线在光电... 详细信息

紫外光探测在光通信、化学与生物相关传感应用中发挥着重要作用。基于氮化镓纳米线的光电化学光探测器以其自供能、环境敏感等特性受到广泛关注。然而,氮化镓纳米线在光电化学环境中易受到光腐蚀,极不稳定。为了提高氮化镓纳米线在光电化学环境中的稳定性,在研究了氮化镓纳米线的光电化学光探测性质的基础上,提出一种利用原子层沉积技术在纳米线表面均匀包覆一层超薄的(~4 nm)二氧化钛保护层,以改善氮化镓纳米线的光电化学稳定性的方法。实验结果表明,相较于未被包覆的氮化镓纳米线,被二氧化钛保护层包覆的氮化镓纳米线在365 nm紫外光照下的光电流密度在2000 s的测试时间内的衰减程度有所下降。具体而言,未被包覆的氮化镓纳米线的光电流衰减系数高达85%;而包覆了二氧化钛保护层的氮化镓纳米线的光电流衰减系数可降至49%。该研究成果为构建长期稳定的氮化镓纳米线基光电化学型光探测器提供了参考。

关键词：氮化镓纳米线光电化学光探测器二氧化钛保护层化学稳定性

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：