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Au-decorated porous structure graphene with enhanced sensing performance for low-concentration NO2 detection

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Rare Metals 2020年第6期39卷 651-658页

作者： Yan-Yan Fan hai-ling tu Yu Pang Feng Wei Hong-Bin Zhao Yi Yang Tian-ling Ren State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China GRIMAT Engineering Institute Co. LtdBeijing 101407China Institute of Microelectronics Tsinghua UniversityBeijing 100084China General Research Institute for Nonferrous Metals Beijing 100088China Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100088China

A recent progress in new emerging two-dimensional(2 D)materials has provided promising opportunity for gas sensing in ultra-low detectable *** this work,we have demonstrated a flexible NO2 gas sensor with porous structure graphene on polyethylene terephthalate substrates operating at room *** gas sensor exhibited good performance with response of 1.2%and a fast response time within 30 s after exposure to50×10^-9 NO2 *** porous structure of graphene increased the surface area,the sensor showed high sensitivity of ppb level for NO2 *** nanoparticles were decorated on the surface of the porous structure graphene skeleton,resulting in an incensement of response compared with pristine *** nanoparticles-decorated graphene exhibits not only better sensitivity(1.5-1.6 times larger than pristine graphene)for NO2 gas detection,but also fast *** sensor was found to be robust and sensitive under the cycling bending test,which could also be ascribed to the merits of *** porous structure graphene-based gas sensor is expected to enable a simple and inexpensive flexible gas sensing platform.

关键词： Graphene Au nanoparticles Porous structure Gas sensor Nitrogen dioxide(NO2)

Resistive switching characteristics of Dy_2O_3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

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Rare Metals 2014年第1期33卷 75-79页

作者： Hong-Bin Zhao hai-ling tu Feng Wei Xin-Qiang Zhang Yu-Hua Xiong Jun Du Advanced Electronic Materials Institute General Research Institute for Nonferrous Metals

Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage （〈1.2 V）, high resistance ratio （〉1 × 104）, a large number of switching cycles, as well as long retention time （〉1 × 105 s）, owing to the local electric field confined and strengthened near the nanocrystals＇ location.

关键词： Dy2O3 Unipolar resistive switching Pt nanocrystal layer Pulsed laser deposition

In situ synthesis of porous Pt-Pd bimetallic structures for sweat glucose biosensing using dynamic hydrogen bubble template method

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Rare Metals 2024年第7期43卷 3408-3414页

作者： Yi-Wen Guo Qian-Hui Wei Fei Wei Hao Liu Hong-Bin Zhao Dong Wang hai-ling tu State Key Laboratory of Advanced Materials for Smart Sensing China GRINM Group Co.Ltd.Beijing 100088China Department of Advanced Electronic Materials GRIMAT Engineering Institute Co.Ltd.Beijing 101407China General Research Institute for Nonferrous Metals Beijing 100088China GRINM(Guangdong)Institute for Advanced Materials and Technology Foshan 528000China School of Chemical Engineering Northeast Electric Power UniversityJilin 132012China

For the practical application of sweat glucose biosensors,it is crucial to develop a method for modifying the working electrode with noble metals that ensures strong *** this study,we synthesized porous Pt-Pd bimetall... 详细信息

关键词： method bubble porous

Energy band alignment of HfO2 on p-type(100)InP

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Rare Metals 2017年第3期36卷 198-201页

作者： Meng-Meng Yang hai-ling tu Jun Du Feng Wei Yu-Hua Xiong Hong-Bin Zhao Xin-Qiang Zhang Advanced Electronic Materials Institute General Research Institute for Nonferrous MetalsBeijing 100088China National Engineering Research Center for Semiconductor Materials General Research Institute for Nonferrous Metals Beijing 100088China

The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was *** chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the *** spectrophotometer （UVS） was employed to obtain the band gap value of *** 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/*** results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） *** with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.

关键词： Band alignment HfO2 InP Large conductionband offset

Chemical vapor deposition growth and transport properties of MoS_(2)-2H thin layers using molybdenum and sulfur as precursors

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Rare Metals 2022年第10期41卷 3574-3578页

作者： Zhi-Tian Shi Hong-Bin Zhao Xiao-Qiang Chen Ge-Ming Wu Feng Wei hai-ling tu Advanced Electronic Materials Institute General Research Institute for Nonferrous MetalsBeijing100088China National Engineering Research Center for Semiconductor Materials General Research Institute for Nonferrous MetalsBeijing100088China

This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as *** some improvements were made to reduce the amount of metastable MoS_(2)-3 *** morphology of the acquired MoS_(2) layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting *** characterization results show that the monolayer MoS_(2) flakes reveal a(002)-oriented growth on SiO_(2)/Si substrates,and its crystalline domain size is approximately 30 μm,and the thickness is 0.65 *** the synthesis of MoS_(2)-3 R is restrained,the electronic transport properties of MoS_(2) with different layers were investigated,revealing that those properties equal with those of MoS_(2) samples prepared by exfoliation methods.

关键词： Molybdenum disulfide Chemical vapor deposition Raman spectra Atomic force microscope Electronic transport properties

Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf_(0.5)Zr_(0.5)O_(2)

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Rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-Hua Wu Hong-Bin Zhao Qing-Zhu Zhang Hua-Xiang Yin Jun Luo Wen-Wu Wang hai-ling tu Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China

In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL) and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-DIBL phenomenon,the drain current(I_(DS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(DD)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

Increased excitatory amino acid transporter 2 levels in basolateral amygdala astrocytes mediate chronic stress–induced anxiety-like behavior

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Neural Regeneration Research 2025年第6期20卷 1721-1734页

作者： Xirong Xu Shoumin Xuan Shuai Chen Dan Liu Qian Xiao Jie tu Shenzhen Key Laboratory of Neuroimmunomodulation for Neurological Diseases Shenzhen-Hong Kong Institute of Brain ScienceShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong ProvinceChina CAS Key Laboratory of Brain Connectome and Manipulation Brain Cognition and Brain Disease Institute(BCBDI)Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong ProvinceChina Guangdong Provincial Key Laboratory of Brain Connectome and Behavior the Brain Cognition and Brain Disease Institute(BCBDI)Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong ProvinceChina University of Chinese of Academy of Sciences BeijingChina Faculty of Life and Health Sciences Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong ProvinceChina

The conventional perception of astrocytes as mere supportive cells within the brain has recently been called into question by empirical evidence, which has revealed their active involvement in regulating brain function and encoding behaviors associated with ***, astrocytes in the basolateral amygdala have been found to play a role in the modulation of anxiety-like behaviors triggered by chronic stress. Nevertheless, the precise molecular mechanisms by which basolateral amygdala astrocytes regulate chronic stress–induced anxiety-like behaviors remain to be fully elucidated. In this study, we found that in a mouse model of anxiety triggered by unpredictable chronic mild stress, the expression of excitatory amino acid transporter 2 was upregulated in the basolateral amygdala. Interestingly, our findings indicate that the targeted knockdown of excitatory amino acid transporter 2 specifically within the basolateral amygdala astrocytes was able to rescue the anxiety-like behavior in mice subjected to stress. Furthermore, we found that the overexpression of excitatory amino acid transporter 2 in the basolateral amygdala, whether achieved through intracranial administration of excitatory amino acid transporter 2agonists or through injection of excitatory amino acid transporter 2-overexpressing viruses with GfaABC1D promoters, evoked anxiety-like behavior in mice. Our single-nucleus RNA sequencing analysis further confirmed that chronic stress induced an upregulation of excitatory amino acid transporter 2 specifically in astrocytes in the basolateral amygdala. Moreover, through in vivo calcium signal recordings, we found that the frequency of calcium activity in the basolateral amygdala of mice subjected to chronic stress was higher compared with normal *** knocking down the expression of excitatory amino acid transporter 2 in the basolateral amygdala, the frequency of calcium activity was not significantly increased, and anxiety-like behavior was ob

关键词： anxiety astrocytes basolateral amygdala behavior dihydrokainic acid excitatory amino acid transporter 2 fiber photometry glutamate LDN-212320 transporter

Anti-SSA/SSB-negative primary Sjögren’s syndrome presenting with hypokalemia:A case report

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World Journal of Emergency Medicine 2022年第2期13卷 149-151页

作者： hai-yan tu Shu-ling Yue Li-jun Mou Department of Nephrology the Second Affiliated Hospital of Zhejiang University School of MedicineHangzhou 310009China Guangzhou KingMed Center for Clinical Laboratory Co.Ltd. Guangzhou 510320China

Dear editor,Here we report a rare case of a patient presented with repeated hypokalemia and metabolic acidosis secondary to primary Sjögren’s syndrome(pSS).Though no significantly raised titers of anti-SSA/SSB antibodies was detected in our case,minor salivary gland biopsy,kidney biopsy and positive Schirmer’s test confirmed the diagnosis of pSS.

关键词： diagnosis SSB SSA

A boryl-migratory semipinacol rearrangement

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Science China Chemistry 2022年第4期65卷 746-752页

作者： Dong-Hang Tan Zhi-Hao Chen ling Yang Chang-Ting Li Fang-hai tu Qingjiang Li Honggen Wang Guangdong Key Laboratory of Chiral Molecule and Drug Discovery School of Pharmaceutical SciencesSun Yat-sen UniversityGuangzhou 510006China State Key Laboratory for Chemistry and Molecular Engineering of Medicinal Resources School of Chemistry and Pharmaceutical Sciences of Guangxi Normal UniversityGuilin 541004China

The semipinacol rearrangement is one of the classic yet useful synthetic tools in organic ***,semipinacol rearrangements involving heteroatom-migration are *** herein is a boryl-migratory semipinacol rearrangement of α-hydroxyallylboronates and α-hydroxypropargylboronates triggered by diverse halogen-,oxygen-,sulfur-and seleniumcontaining *** protocol leads to a mild and facile access to organoborons bearing valuable *** σ(C-B)hyperconjugation is believed to be the key factor that leads to the observed exclusive chemoselectivity and enhanced *** utilities of the formed products were demonstrated.

关键词： 1,2-boryl migration hyperconjugation iterative cross-coupling organoborons semipinacol rearrangement sp3-B tetrasubstituted alkene