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Square ZnO nano-column and its thermal evolution

Science china(Technological Sciences) 2010年第2期53卷 309-312页

作者： huang binwang, zhan huahan,{2., chen xiaohang & kang junyong key laboratory of semiconductor materials and applications, department of physics, xiamen university, xiamen 361005, china 1. key laboratory of {2. {2. and applications Department of Physics Xiamen University Xiamen 361005 China

Square ZnO nano-columns have been manufactured by molecular beam epitaxy on p-type Si (100) substrate. The morphology and the evolution sequences after thermal annealing were investigated by in-situ scanning tunneling microscopy. We associated the morphology and microstructure evolution with the cubic Si (100) substrate, large lattice mismatching, the coexistence of wurtzite and zincblende phases of ZnO, and the thermal effect.

关键词： ZnO square nano-column anneal wurtzite phase zincblende phase Si (100)

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Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(737) Surface

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Nano-Micro Letters 2015年第2期7卷 194-202页

作者： Changjie Zhou yaping wu {2. {2. Wei Lin Yinhui Zhou junyong kang Huili Zhu Fujian key laboratory of {2. {2. and applications Department of Physics Xiamen University department of physics School of Science Jimei University

A tiny number of Zn atoms were deposited on Si(111)-(797) surface to study the evolution process of Zninduced nanoclusters. After the deposition, three types(type I, II, and III) of Zn-induced nanoclusters were observed to occupy preferably in the faulted half-unit cells. These Zn-induced nanoclusters are found to be related to one, two, and three displaced Si edge adatoms, and simultaneously cause the depression of one, two, and three closest Si edge adatoms in the neighboring unfaulted half-unit cells at negative voltages, respectively. First-principles adsorption energy calculations show that the observed type I, II, and III nanoclusters can reasonably be assigned as the Zn3Si1, Zn5Si2. and Zn7Si3 clusters,respectively. And Zn3Si1, Zn5Si2. and Zn7Si3 clusters are, respectively, the most stable structures in cases of one, two, and three displaced Si edge adatoms. Based on the above energy-preferred models, the simulated bias-dependent STM images are all well consistent with the experimental observations. Therefore, the most stable Zn7Si3 nanoclusters adsorbed on the Si(111)-(797) surface should grow up on the base of Zn3Si1 and Zn5Si2.lusters. A novel evolution process from Zn3Si1 to Zn5Si2. and finally to Zn7Si3 nanocluster is unveiled.

关键词： Nanoclusters Silicon Scanning tunneling microscopy First-principles calculations

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Influence of nitrogen and magnesium doping on the properties of ZnO films

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Chinese physics B 2016年第7期25卷 331-335页

作者：李东华王惠琼周华李亚平黄政郑金成王嘉鸥钱海杰奎热西陈晓航詹华瀚周颖慧康俊勇 Fujian Provincial key laboratory of {2.s and {2. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices Department of Physics Xiamen University Xiamen 361005 China xiamen university Malaysia Campus Sepang Selangor 439000 Malaysia State key laboratory of Silicon {2. Zhejiang University Hangzhou 310027 China Beijing Synchrotron Radiation Facility Institute of High Energy Physics Chinese Academy of Sciences Beijing 100049 China

Undoped ZnO and doped ZnO films were deposited on the MgO（111） substrates using oxygen plasma-assisted molecular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction（XRD）. The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory *** is found that, nitrogen doping would hinder the growth of thin film, and generate the NOdefect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting（N_2.Oproduction and increasing nitrogen content.

关键词： ZnO nitrogen magnesium x-ray absorption spectra

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