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Breaking the resolution-bandwidth limit of chip-scale spectrometry by harnessing a dispersion-engineered photonic molecule

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Light(Science & Applications) 2023年第3期12卷 475-488页

作者： hongnan Xu Yue Qin Gaolei Hu hon ki tsang Department of Electronic Engineering The Chinese University of Hong KongShatinNew TerritoriesHong Kong SARChina

The chip-scale integration of optical spectrometers may offer new opportunities for in situ bio-chemical analysis,remote sensing,and intelligent health *** miniaturization of integrated spectrometers faces the challenge of an inherent trade-off between spectral resolutions and working ***,a high resolution requires long optical paths,which in turn reduces the free-spectral range(FSR).In this paper,we propose and demonstrate a ground-breaking spectrometer design beyond the resolution-bandwidth *** tailor the dispersion of mode splitting in a photonic molecule to identify the spectral information at different *** tuning over a single FSR,each wavelength channel is encoded with a unique scanning trace,which enables the decorrelation over the whole bandwidth spanning multiple *** analysis reveals that each left singular vector of the transmission matrix is mapped to a unique frequency component of the recorded output signal with a high sideband suppression ***,unknown input spectra can be retrieved by solving a linear inverse problem with iterative *** results demonstrate that this approach can resolve any arbitrary spectra with discrete,continuous,or hybrid *** ultrahigh resolution of100 nm far exceeding the narrow *** ultralarge wavelength-channel capacity of 2501 is supported by a single spatial channel within an ultrasmall footprint(≈60×60μm^(2)),which represents,to the best of our knowledge,the highest channel-to-footprint ratio(≈0.69μm^(−2))and spectral-to-spatial ratio(>2501)ever demonstrated to date.

关键词： resolution dispersion limit

Million-Q integrated Fabry-Perot cavity using ultralow-loss multimode retroreflectors

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Photonics Research 2022年第11期10卷 2549-2559页

作者： honGNAN XU YUE QIN GAOLEI HU hon ki tsang Department of Electronic Engineering The Chinese University of Hong KongShatinNew TerritoriesHong KongChina

The monolithic integration of Fabry-Perot cavities has many applications,such as label-free sensing,high-finesse filters,semiconductor lasers,and frequency comb ***,the excess loss of integrated reflectors makes it challenging to realize integrated Fabry-Perot cavities working in the ultrahigh-Q regime(>10^(6)).Here,we propose and experimentally demonstrate what we believe is the first silicon integrated million-Q Fabry-Perot *** by free-space optics,a novel monolithically integrated retroreflector is utilized to obtain near-unity reflectance and negligible reflection *** corner scattering in the retroreflector is prevented by the use of the TE_(1) mode,taking advantage of its zero central field *** incurred by other mechanisms are also meticulously *** measurement results show resonances with an ultrahigh intrinsic Q factor of≈3.4×10^(6)spanning an 80-nm *** measured loaded Q factor is≈2.1×10^(6).Ultralow reflection losses(≈0.05 dB)and propagation losses(≈0.18 dB/cm)are experimentally realized.

关键词： scattering cavity optics

Silicon-graphene photonic devices

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Journal of Semiconductors 2018年第6期39卷 104-111页

作者： Yanlong Yin Jiang Li Yang Xu hon ki tsang Daoxin Dai Centre for Optical and Electromagnetic Research State Key Laboratory for Modern Optical InstrumentationZhejiang University College of Information Science and Electronic Engineering Zhejiang University Department of Electronic Engineering The Chinese University of Hong Kong

Silicon photonics has attracted much attention because of the advantages of CMOS （complementary- metal-oxide-semiconductor） compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been re- garded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning.

关键词： silicon graphene thermo-optic all-optic photodetector

High-Q germanium optical nanocavity

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Photonics Research 2018年第9期6卷 925-928页

作者： TING-HUI XIAO ZIQIANG ZHAO WEN ZHOU MITSURU TAKENAKA hon ki tsang ZHENZHOU CHENG KEISUKE GODA Department of Chemistry The University of TokyoTokyo 113-0033Japan Department of Electrical Engineering and Information Systems The University of TokyoTokyo 113-0033Japan Department of Electronic Engineering The Chinese University of Hong KongShatinHong Kong SARChina Department of Electrical Engineering University of CaliforniaLos AngelesCalifornia 90095USA

Mid-infrared(MIR) integrated photonics has attracted broad interest due to its promising applications in biochemical sensing, environmental monitoring, disease diagnosis, and optical communication. Among MIR integration platforms, germanium-based platforms hold many excellent properties, such as wide transparency windows, high refractive indices, and high nonlinear coefficients; however, the development of MIR germanium photonic devices is still in its infancy. Specifically, MIR high-Q germanium resonators with comparable performance to their silicon counterparts remain unprecedented. Here we experimentally demonstrate an MIR germanium nanocavity with a Q factor of ~18,000, the highest-to-date of reported nanocavities across MIR germanium-based integration platforms. This is achieved through a combination of a feasible theoretical design,Smart-Cut methods for wafer development, and optimized device fabrication processes. Our nanocavity, with its high Q factor and ultrasmall mode volume, opens new avenues for on-chip applications in the MIR spectral range.

关键词：薄膜热光性能通讯技术发展现状

Enhanced optical Kerr nonlinearity of MoS2 on silicon waveguides

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Photonics Research 2015年第5期3卷 206-209页

作者： Linghai Liu Ke Xu Xi Wan Jianbin Xu Chi Yan Wong hon ki tsang Department of Electronic Engineering The Chinese University of Hong Kong Department of Electronic and Information Engineering Shenzhen Graduate SchoolHarbin Institute of Technology

A quasi-two-dimensional layer of MoS2 was placed on top of a silicon optical waveguide to form a MoS2–silicon hybrid structure. Chirped pulse self-phase modulation measurements were carried out to determine the optica Kerr nonlinearity of the structure. The observed increase in the spectral broadening of the optical pulses in the MoS2–silicon waveguide compared with the silicon waveguides indicated that the third-order nonlinear effect in MoS2 is about 2 orders of magnitude larger than that in silicon. The measurements show that MoS2 has an effective optical Kerr coefficient of about 1.1 × 10-16m2∕W. This work reveals the potential application of MoS2 to enhance the nonlinearity of hybrid silicon optical devices.

关键词： Mo Enhanced optical Kerr nonlinearity of MoS2 on silicon waveguides mode

Fundamentals and applications of photonic waveguides with bound states in the continuum

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半导体学报:英文版 2023年第10期44卷 11-24页

作者： Zejie Yu He Gao Yi Wang Yue Yu hon ki tsang Xiankai Sun Daoxin Dai Centre for Optical and Electromagnetic Research State Key Laboratory for Modern Optical InstrumentationZhejiang Provincial Key Labora-tory for Sensing TechnologiesInternational Research Center for Advanced PhotonicsCollege of Optical Science and EngineeringZhejiang Uni-versityHangzhou 310058China Department of Electronic Engineering The Chinese University of Hong KongShatinNew TerritoriesHong Kong SARChina Jiaxing Key Laboratory of Photonic Sensing&Intelligent Imaging Jiaxing 314000China Intelligent Optics&Photonics Research Center Jiaxing Research Institute Zhejiang UniversityJiaxing 314000China Ningbo Research Institute Zhejiang UniversityNingbo 315100China

Photonic waveguides are the most fundamental element for photonic integrated circuits(PICs).Waveguide properties,such as propagation loss,modal areas,nonlinear coefficients,etc.,directly determine the functionalities and performance of ***,the emerging waveguides with bound states in the continuum(BICs)have opened new opportunities for PICs because of their special properties in resonance and ***,we review the recent progress of PICs composed of waveguides with ***,fundamentals including background physics and design rules of a BIC-based waveguide will be ***,two types of BIC-based waveguide structures,including shallowly etched dielectric and hybrid waveguides,will be ***,the challenges and opportunities of PICs with BICs will be discussed.

关键词： photonic waveguide bound states in the continuum integrated photonics

Integrated optoelectronics with two-dimensional materials

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National Science Open 2022年第3期1卷 59-86页

作者： Zhenzhou Cheng Rongxiang Guo Jiaqi Wang Yi Wang Zhengkun Xing Lei Ma Wei Wei Yu Yu hon ki tsang Tiegen Liu School of Precision Instruments and Optoelectronics Engineering Tianjin UniversityTianjin 300072China Key Laboratory of Optoelectronics Information Technology Ministry of EducationTianjin 300072China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China Department of Electronic Engineering The Chinese University of Hong KongHong KongChina Tianjin International Center for Nanoparticles and Nanosystems Tianjin UniversityTianjin 300072China College of Optoelectronic Engineering Chongqing UniversityChongqing 400044China Key Laboratory of Optoelectronic Technology and System Ministry of EducationChongqing 400044China Wuhan National Laboratory for Optoelectronics Wuhan 430074China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China

As we enter the post-Moore era,heterogeneous optoelectronic integrated circuits(OEICs)are attracting significant attention as an alternative approach to scaling to smaller-sized ***-dimensional(2D)materials,offering a range of intriguing optoelectronic properties as semiconductors,semimetals,and insulators,provide great potential for developing nextgeneration heterogeneous *** instance,Fermi levels of 2D materials can be tuned by applying electrical voltages,while their atomically thin geometries are inherently suited for the fabrication of planar devices without suffering from lattice *** the first graphene-on-silicon OEICs were demonstrated in 2011,2D-material heterogeneous OEICs have significantly *** date,researchers have a better understanding of the importance of interface states on the optical properties of chip-integrated 2D ***,there has been impressive progress towards the use of 2D materials for waveguide-integrated lasers,modulators,and *** this review,we summarize the history,status,and trend of integrated optoelectronics with 2D materials.

关键词： integrated optoelectronics two-dimensional materials heterogeneous integration silicon photonics

Introduction for the Group-IV Photonics feature

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Photonics Research 2014年第3期2卷 I0001-I0001页

作者： Koji Yamada Jurgen Michel Marco Romagnoli hon ki tsang Nippon Telegraph and Telephone Corporation 3-1Morinosato-WakamiyaAtsugi 243-0198Japan Massachusetts Institute of Technology 77 Massachusetts AvenueCambridgeMassachusetts 02139USA Consorzio Nazionale Interuniversitario per le Telecomunicazioni via Moruzzi 1 56124 PisaItaly The Chinese University of hong Kong ShatinN.T.Hong Kong

Silicon-based photonics technology,which has the DNA of silicon electronics technology,promises to provide a compact photonic integration platform with high integration density,mass-producibility,and excellent cost *** technology has been used to develop various photonic devices based on silicon,such as waveguides,filters,and *** addition,germanium photodetectors have been built on a silicon-based photonic *** photonic devices have already been monolithically integrated,and a group-IV photonic platform based on silicon and germanium,or standard group-IV materials,has been ***,photonics–electronics convergence is now being pursued based on this platform.

关键词： integration electronics photonics

Integrated scanning spectrometer with a tunable micro-ring resonator and an arrayed waveguide grating

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Photonics Research 2022年第5期10卷 I0009-I0016页

作者： ZUNYUE ZHANG YI WANG JIARUI WANG DAN YI DAVID WENG U CHAN WU YUAN hon ki tsang Department of Electronic Engineering The Chinese University of Hong KongHong KongChina Department of Biomedical Engineering The Chinese University of Hong KongHong KongChina

Integrated spectrometers with both wide optical bandwidths and high spectral resolutions are required in applications such as spectral domain optical coherence tomography(SD-OCT).Here we propose a compact integrated scanning spectrometer by using a tunable micro-ring resonator(MRR)integrated with a single arrayed waveguide grating for operation in the 1265-1335-nm *** spectral resolution of the spectrometer is determined by the quality factor of the MRR,and the optical bandwidth is defined by the free spectral range of the arrayed waveguide *** spectrometer is integrated with on-chip germanium photodetectors,which enable direct electrical readout.A 70-nm optical bandwidth and a 0.2-nm channel spacing enabled by scanning the MRR across one free spectral range are demonstrated,which offer a total of350 wavelength channels with 31-kHz wavelength scanning *** integrated spectrometer is applied to measure different spectra and the interference signals from an SD-OCT system,which shows its great potential for future applications in sensing and imaging systems.

关键词： waveguide resonator arrayed