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Journal of Modern Physics 2017年第14期8卷 2200-2208页

作者： Amadou Diao Mamadou Wade Moustapha Thiame grégoi.e sissoko Semiconductors and Solar energy Laboratory Department of Physics Faculty of Sciences and Techniques University of Cheikh Anta Diop Dakar Senegal Laboratory of Sciences and Techniques of Water and environment Polytechnic School of Thiès Thiès Senegal University Assane SeCK Ziguinchor Senegal

The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell under polychromatic illumination and a constant magnetic field effect. By use of the continuity equation in the base of the solar cell maintained in a constant temperature at 300 K, an expression of the excess minority carriers’ density was determined according to the applied magnetic field, the base depth and the junction recombination velocity. From the expression of the minority carriers’ density, the photoconductivity of the solar cell was deduced and which allowed us to predict some recombination phenomena, the use of such solar cell in optoelectronics. The profile of the photoconductivity also permitted us to utilize a linear model in order to determine an electrical capacitance that varied with magnetic field.

关键词： Bifacial Solar Cell Photoconductivity Junction Recombination Velocity Magnetic Field electrical Capacitance

Two-Dimensional Finite element Method Analysis effect of the Recombination Velocity at the grain Boundaries on the Characteristics of a Polycrystalline Silicon Solar Cell

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Circuits and Systems 2016年第13期7卷 4186-4200页

作者： Nzonzolo Désiré Lilonga-Boyenga Camille Nziengui Mabika grégoi.e sissoko electronics and electrical engineering Laboratory Polytechnic Superior National School University Marien Ngouabi Brazzaville Republic of the Congo Laboratory of Semiconductors and Solar energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal

To take into account the variation of the recombination velocity at the grain boundaries, we present in this paper a new approach of characterization of the solar cells, based on the two dimensional finite element method. The results of this study on a bifacial polycrystalline silicon solar cell, modelled in the rectangular form, highlighting the effects of the boundary recombination velocity (Sgb) on the solar cell electrical parameters. The photogenerated excess carrier’s density, the photocurrent density;the phototovoltage and the current-voltage characteristics are analyzed, namely. A good agreement with the results given in the literature is observed.

关键词： Solar Cell grain Boundary Photocurrent Photovoltage Recombination Velocity Finite element

Temperature effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light

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World Journal of Condensed Matter Physics 2016年第3期6卷 261-268页

作者： Ibrahima Diatta Ibrahima Ly Mamadou Wade Marcel Sitor Diouf Senghane Mbodji grégoi.e sissoko Physics Department Faculty of Sciences and Techniques University of Cheikh Anta Diop Dakar Senegal electromechanical engineering Department Polytechnic School of Thies University Thies Senegal University of Alioune DIOP Bambey Senegal

In static regime with polychromatic illumination, using the expression of the solar cell capacitance to determine the silicon solar cell capacitance C0(T) in short-circuit, is the purpose of this article. The expression of the excess minority carries density δ(x) from the continuity equation. The expression of δ(x) is used to determine the photovoltage expression. The capacitance efficiency dependence on Xcc(T) is studied. Xcc(T) is the abscissa of the maximum of δ(x).

关键词： Solar Cell Capacitance Temperature

Study and Optimization of a Photovoltaic Mill System Functioning on the Course of the Sun

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energy and Power engineering 2017年第4期9卷 260-272页

作者： Tafsir Abdoulaye Gaye Biram Dieng Senghane Mbodji Ousmane Sow grégoi.e sissoko Department of Physics UFR Applied Sciences and Information and Communication Technologies Alioune Diop University of Bambey Bambey Senegal Universitary Institute of Technology University of Thies Thies Senegal Department of Physics Faculty of Science and Technology Cheikh Anta Diop University of Dakar Dakar Senegal

This paper dealt with the optimization of the performance of a photovoltaic mill system operating on the sun race. Depending on the characteristics of the powered load which is a DC motor driving a grain mill and on the weather conditions (temperature and illumination), we noted a very big difference between the potential maximum power and that actually transferred to the load. In order to improve the overall efficiency of the system, we use an adaptation circuit consisting of a boost converter controlled by a numerical MPPT (Maximum Power Point Tracking) command. With the Perturb & Observe (P & O) algorithm, the MPPT control measure the photocurrent, the photo tension and the power released by the photovoltaic generator. From this result, the MPPT control adjusts the duty cyclic of the converter to bring the system to the optimum operating point. Hence, using MATLAB/Simulink software, we did the modeling and the simulation of the system which is composed by a PV generator, a boost converter, a Pulse Width Modulation and a DC motor.

关键词： PV Generator Boost Converter PWM Signal MPPT Control Perturbation & Observation DC Motor Mill

Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: electric equivalent Circuits

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World Journal of Condensed Matter Physics 2014年第2期4卷 84-92页

作者： Amadou Diao Ndeye Thiam Martial Zoungrana Gokhan Sahin Mor Ndiaye grégoi.e sissoko Laboratory of environment Materials Physics Department Training and Research Unit in Applied Science University of Ouagadougou Ouagadougou Burkina Faso Laboratory of Semiconductors and Solar energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Sénégal

In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field;the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers’ mobility. electric parameters were derived from the diffusion coefficient equivalent circuits.

关键词： Solar Cell Magnetic Field Frequency Modulation Diffusion Coefficient

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: effect of Temperature

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Journal of Modern Physics 2018年第2期9卷 172-188页

作者： Bakary Dit Dembo Sylla Ibrahima Ly Ousmane Sow Babou Dione Youssou Traore grégoi.e sissoko Laboratory of Semiconductors and Solar energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal electromecanical department Polytechnic School of Thiès Thiès Senegal University Institute of Technology University of Thiès Thiès Senegal

In this work, we study the method for determining the maximum of the minority carrier recombination velocity at the junction Sfmax, corresponding to the maximum power delivered by the photovoltaic generator. For this, we study the temperature influence on the behavior of the front white biased solar cell in steady state. By solving the continuity equation of excess minority carrier in the base, we have established the expressions of the photocurrent density, the recombination velocity on the back side of the base Sb, and the photovoltage. The photocurrent density and the photovoltage are plotted as a function of Sf, called, minority carrier recombination velocity at the junction surface, for different temperature values. The illuminated I-V characteristic curves of the solar cell are then derived. To better characterize the solar cell, we study the electrical power delivered by the base of the solar cell to the external charge circuit as either junction surface recombination velocity or photovoltage dependent. From the output power versus junction surface recombination velocity Sf, we have deduced an eigenvalue equation depending on junction recombination velocity. This equation allows to obtain the maximum junction recombination velocity Sfmax corresponding to the maximum power delivered by the photovoltaic generator, throughout simulink model. Finally, we deduce the conversion efficiency of the solar cell.

关键词： Silicon Solar Cell-Junction Surface Recombination Velocity-Maximum Power

Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination

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Journal of Applied Mathematics and Physics 2015年第11期3卷 1536-1543页

作者： Gokhan Sahin Moustapha Dieng Mohamed Abderrahim Ould el Moujtaba Moussa Ibra Ngom Amary Thiam grégoi.e sissoko Physics Department Faculty of Sciences and Techniques University of Cheikh Anta Diop Dakar Senegal

The aim of this study is to show the influence of the wavelength on the electrical parameters of vertical parallel junction silicon solar cell by use of impedance spectroscopy technique. The Bode diagrams of the diffusion capacitance are shown for different wavelengths while the solar cell operates under both open circuit and short circuit conditions. The Nyquist diagram of the diffusion capacitance has shown the extension of the space charge region for various wavelengths.

关键词： Vertical Parallel Junction Wavelength Capacitance Bode and Nyquist Diagrams

Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation

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Journal of Applied Mathematics and Physics 2015年第11期3卷 1522-1535页

作者： el Hadji Ndiaye Gokhan Sahin Moustapha Dieng Amary Thiam Hawa Ly Diallo Mor Ndiaye grégoi.e sissoko Laboratory of Semiconductors and Solar energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal

In this study, a method for determining the intrinsic recombination velocity at the junction of a silicon solar cell is presented. The expression of intrinsic recombination velocity at the junction was established under irradiation in frequency modulation. Based on this expression, an electrical model of the intrinsic recombination velocity at the junction is presented.

关键词： Silicon Solar Cell Frequency Modulation Intrinsic Recombination Velocity at the Junction Irradiation energy

A Review on Conductive and Transparent Materials Used in the Design of Transparent Antennas

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Open Journal of Antennas and Propagation 2023年第2期11卷 11-25页

作者： Abdoulaye sissoko Cheick Oumar Sanogo Badié Diourté Université des Sciences des Techniques et des Technologies de Bamako Bamako Mali

In this review, we highlight the essential parameters of some transparent materials for use in the design of transparent antennas. ITO films with a sheet resistance of Rs = 10 Ω/sq and a T = 90% transmittance, we turn to materials that can be serious alternatives for ITO, such as graphene T = 97% for Rs = 60 Ω/sq and the micro-mesh metal. Wire mesh seems to be the best alternative T = 93% for Rs Rs = 0.022 Ω/sq at T = 81%, this is the micrometric pitch mesh.

关键词： Transmittance Resistance by Square grid Micrometric Mesh

Minority Carrier Diffusion Coefficient <i>D</i>*(<i>B,T</i>): Study in Temperature on a Silicon Solar Cell under Magnetic Field

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energy and Power engineering 2017年第1期9卷 1-10页

作者： Richard Mane Ibrahima Ly Mamadou Wade Ibrahima Datta Marcel S. Douf Youssou Traore Mor Ndiaye Seni Tamba grégoi.e sissoko Laboratoire des Semi-conducteurs et d’energie Solaire Facult&eacute des Sciences et Techniques Universit&eacute Cheikh Anta Diop Dakar S&eacute n&eacute gal ecole Polytechnique de Thi&egrave s Thi&egrave s S&eacute n&eacute gal

This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal behavior of minority carrier that is better understood with Umklapp process. This study allowed to determine an optimum temperature which led to maximum diffusion coefficient value while magnetic field remained constant.

关键词： Solar cell Diffusion Coefficient Temperature Magnetic Field