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Structure and Thermoelectri. Properti.s of Nanostructured (Bi. Sb)<sub>2</sub>Te<sub>3</sub>(Revi.w)

Advances i. Materi.ls Physi.s and Chemi.try 2013年第2期3卷 119-132页

作者： i.or A. Drabki. Vladi.i. V. Karataev Vladi.i. B. Osvenski.Aleksandr i. Soroki. gennady i. pivovarov Natali. Yu. Tabachkova Department of di.lectri. and semi.onductor materi.ls National University of Science and Technology “MISIS” Moscow Russia Department of functi.nal and structural materi.ls Technological Institute of Superhard and New Carbon Materials Troitsk Russia Department of semi.onductor materi.ls Giredmet Ltd. Moscow Russia

The i.vesti.ati.n of the structure and thermoelectri. properti.s of nanostructured soli. soluti.ns (Bi. Sb)2Te3 p-type has been carri.d out. The samples were obtai.ed by gri.di.g of ori.i.al composi.i.ns i. a planetary ball mi.l and by spark plasma si.teri.g (SPS). i.i.i.l powder has an average parti.le si.e of 10 - 12 nm accordi.g to transmi.si.n electron mi.roscopy, and the si.e of the coherent scatteri.g regi.n (CSR) obtai.ed by X-ray li.e broadeni.g. Duri.g si.teri.g at Ts = 250°C - 400°C, the grai. si.e and CSR i.creased, whi.h was associ.ted wi.h the processes of recrystalli.ati.n. The maxi.um of si.e di.tri.uti.n of CSR shi.ts to larger si.es when Ts i.creases so that no broadeni.g of X-ray li.es at Ts = 400°C can take place. At hi.her Ts, the emergence of new nanograi.s i. observed. The formati.n of nanograi.s i. condi.i.ned by reduci.g of quanti.y of the i.tri.si. poi.t defects produced i. the gri.di.g of the source materi.ls. The study of the electri.al conducti.i.y and the Hall effect i. a si.gle crystal allows to esti.ate the mean free path of the holes-L i. the si.gle crystal Bi..5Sb1.5Te3 whi.h at room temperature i. 2 - 5 nm (i. i. much smaller than the di.ensi.ns of CSR i. the samples). The method for evaluati.n of L i. polycrystalli.e samples i. proposed. At room temperature, L i. close to the mean free path i. si.gle crystals. Scatteri.g parameter holes i. SPS samples obtai.ed from the temperature dependence of the Seebeck coeffi.i.nt are wi.hi. the measurement error equal to the parameter of the scatteri.g of holes i. a si.gle crystal. The fi.ure of meri. ZT of SPS samples as a functi.n of composi.i.n and si.teri.g temperature has been i.vesti.ated. Maxi.um ZT, equal to 1.05 at room temperature, i. obtai.ed for the composi.i.n Bi..4Sb1.6Te3 at Ts = 500°C and a pressure of 50 MPa. The causes of an apparent i.crease i. thermoelectri. effi.i.ncy are di.cussed.

关键词： Soli. Soluti.ns (Bi Sb)2Te3 P-Type Nanostructure Spark Plasma Si.teri.g Conducti.i.y Hall Effect Hole Free Path Seebeck Coeffi.i.nt Thermal Conducti.i.y Fi.ure of Meri.

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