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Simultaneous control of ferromagnetism and ferroelasticity by oxygen octahedral backbone stretching

Chinese Physics B 2024年第9期33卷 186-192页

作者： genhao liang Hui Cao Long Cheng Junkun Zha Mingrui Bao Fei Ye Hua Zhou Aidi Zhao Xiaofang Zhai Department of Physics University of Science and Technology of ChinaHefei 230026China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Materials Science Division Argonne National LaboratoryLemontIL 60439USA X-ray Science Division Advanced Photon SourceArgonne National LaboratoryLemontIL 60439USA

Coexistence of ferromagnetism and ferroelasticity in a single material is an intriguing phenomenon,but has been rarely *** we studied both the ferromagnetism and ferroelasticity in a group of LaCoO3 films with systematically tuned atomic *** found that all films exhibit ferroelastic domains with four-fold symmetry and the larger domain size(higher elasticity)is always accompanied by stronger *** performed synchrotron x-ray diffraction studies to investigate the backbone structure of the CoO6 octahedra,and found that both the ferromagnetism and the elasticity are simultaneously enhanced when the in-plane Co–O–Co bond angles are *** the study demonstrates the inextricable correlation between the ferromagnetism and ferroelasticity mediated through the octahedral backbone structure,which may open up new possibilities to develop multifunctional materials.

关键词： perovskite oxide film ferromagnetism ferroelasticity twin domain

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In-situ quantification of the surface roughness for facile fabrications of atomically smooth thin films

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Nano Research 2022年第2期15卷 1654-1659页

作者： genhao liang Long Cheng Junkun Zha Hui Cao Jingxian Zhang Qixin Liu Mingrui Bao Jia Liu Xiaofang Zhai Hefei National Laboratory for Physical Science at Microscale Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026China School of Physical Science and Technology ShanghaiTech UniversityPudongShanghai 201210China X-ray Science Division Advanced Photon SourceArgonne National LaboratoryLemontIL 60439USA

This work presents an in-situ technique to quantify the layer-by-layer roughness of thin films and heterostructures by measuring the spectral profile of the reflection high-energy electron diffraction(RHEED).The characteristic features of the diffraction spot,including the vertical to lateral size ratio c/b and the asymmetrical ratio c_(1)/c_(2) along the vertical direction,are found to be quantitatively dependent on the surface *** quantitative relationships between them are established and discussed for different incident angles of high-energy *** an example,the surface roughnesses of LaCoO_(3) films grown at different temperatures are obtained using such an in-situ technique,which are confirmed by the ex-situ atomic force ***,the in-situ measured layer-by-layer roughness oscillations of two LaCoO_(3) films are demonstrated,revealing drastically different information from the intensity *** experiments assisted with the in-situ technique demonstrate an outstanding high resolution down to-0.1 ***,the new quantitative RHEED technique with real-time feedbacks significantly escalates the thin film synthesis efficiency,especially for achieving atomically smooth surfaces and *** opens up new prospects for future generations of thin film growth,such as the artificial intelligence-assisted thin film growth.

关键词： reflection high-energy electron diffraction roughness thin film growth high efficiency in-situ real time

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Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate

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Chinese Physics B 2018年第7期27卷 431-437页

作者： Shanna Zhu Gang Shi Peng Zhao Dechao Meng genhao liang Xiaofang Zhai Yalin Lu Yongqing Li Lan Chen Kehui Wu Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of ChinaHefei 230026China Microsystem and Terahertz Research Center ＆ Institute of Electronic Engineering CAER Mianyang 621900China Synergy Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230026China Collaborative Innovation Center of Quantum Matter.Beijing 100871 China

Exchange coupling between topological insulator and ferromagnetic insulator through proximity effect is strongly attractive for both fundamental physics and technological applications. Here we report a comprehensive investigation on the growth behaviors of prototype topological insulator Bi2Se3 thin film on a single-crystalline LaCoO3 thin film on SrTiO3 substrate, which is a strain-induced ferromagnetic insulator. Different from the growth on other substrates, the Bi2Se3 films with highest quality on LaCoO3 favor a relatively low substrate temperature during growth. As a result, an inverse dependence of carrier mobility with the substrate temperature is found. Moreover, the magnetoresistance and coherence length of weak antilocalization also have a similar inverse dependence with the substrate temperature, as revealed by the magnetotransport measurements. Our experiments elucidate the special behaviors in Bi2Se3/LaCoO3 heterostructures, which provide a good platform for exploring related novel quantum phenomena, and are inspiring for device applications.

关键词： topological insulator ferromagnetic insulator molecular beam epitaxy magnetotransport proper-ties

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