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Simulation and Suppression of the Gas Phase Pre-reaction in Metal-Organic Chemical Vapor Deposition of ZnO

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Chinese Physics Letters 2011年第11期28卷 198-201页

作者： ZHU guang-Yao gu shu-lin ZHU shun-Ming TANG Kun YE Jian-Dong ZHANG Rong SHI Yi ZHENG You-Dou Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering Nanjing UniversityNanjing 210093

The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented,indicating the temperature of the reaction *** gas phase pre-reaction can be modulated by several factors or *** verify the relationships between temperature and pyrolysis of precursors,and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature *** experimental results agree with the simulations.

关键词： conditions pyrolysis verify

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

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Chinese Physics Letters 2000年第3期17卷 224-226页

作者： CHEN Peng SHEN Bo ZHU Jian-Min CHEN Zhi-Zhong ZHOU Yu-Gang XIE Shi-Yong ZHANG Rong HAN Ping gu shu-lin ZHENG You-Dou JIANG shu-Sheng FENG Duan Z.C.Huang Department of Physics and Laboratory of Solid State Microstructures Nanjing UniversityNanjing 210093 Raytheon ITSS 4500 Forbes BulivardMD20771USA

Microstructures of GaN buffer layers grown on Si(111)substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope(AFM)and a high-resolution transmission electron microscope(HBTEM).AFM images show that the islands appear in the GaN buffer layer after annealing at high ***-sectional HBTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small *** boundaries of those domains locate near the bunched steps,and the regions of the Him on a terrace between steps have the same crystal *** amorphous-like layer,about 3nm thick,can also be observed between the GaN buffer layer and the Si substrate.

关键词： Si(111) temperature GaN

In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition

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Chinese Physics Letters 2012年第10期29卷 217-220页

作者： DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong gu shu-lin LV Peng ZHU Shi-Ning ZHENG You-Dou Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210093 School of Physics National Laboratory of Solid State MicrostructuresNanjing UniversityNanjing 210093

The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman scattering *** polarised PL and transmission spectra,the in-plane optical anisotropic properties of a-plane GaN film are found,which are attributed to the topmost valance band(atΓpoint)split into three sub-bands under anisotropic *** PL spectra also exhibit that the light hole band moves up more rapidly than the spin-orbit crystal-field spilt-off hole band with the increasing in-plane anisotropic compressive *** scattering spectra under different configurations further indicate the in-plane anisotropy and the hexagonal crystalline structure of these a-plane GaN films.

关键词： scattering vapour anisotropic

Preparation of AlGaN/GaN Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure

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Chinese Physics Letters 2000年第8期17卷 617-618页

作者： ZHOU Yu-Gang SHEN Bo ZHANG Rong LI Wei-Ping CHEN Peng CHEN Zhi-zhong gu shu-lin SHI Yi Z.C.Huang ZHENG You-dou Solid State Microstructures Laboratory and Department of Physics Nanjing UniversityNanjing 210093 Raytheon ITSS 4500 Forbes BulivardMD 20771USA

AlGaN/GaN heterostructures on sapphire substrate were fabricated by using light radiation heating metalor ganic chemical vapor *** excitation spectra show that there are two abrupt slopes corresponding to the absorption edges of AlGaN and GaN,respectively.X-ray diffraction spectra clearly exhibit the GaN(0002),(0004),and A1GaN(0002),(0004)diffraction peaks,and no diffraction peak other than those from the GaN{0001}and A1GaN{0001}planes is *** space mapping indicates that there is no tilt between the AlGaN layer and the GaN *** results also indicate that the sample is of sound quality and the Al composition in the AlGaN layer is of high uniformity.

关键词： AlGaN/GaN AlGaN sapphire

ZnMgO生长中压强和衬底对薄膜性质的影响

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发光学报 2011年第5期32卷 482-486页

作者：陈慧顾书林朱顺明南京大学物理系南京微结构国家重点实验室江苏南京210093

利用金属有机源化学气相沉积(MOCVD)生长方法,在2.5kPa和5kPa生长压强下,分别以sapphire(Al_2O_3)和ZnO为衬底生长ZnMgO薄膜。研究分析了样品的晶体结构、表面形貌、光电学性质。结果表明,衬底和生长压强对ZnMgO薄膜的生长有重要影响。5... 详细信息

利用金属有机源化学气相沉积(MOCVD)生长方法,在2.5kPa和5kPa生长压强下,分别以sapphire(Al_2O_3)和ZnO为衬底生长ZnMgO薄膜。研究分析了样品的晶体结构、表面形貌、光电学性质。结果表明,衬底和生长压强对ZnMgO薄膜的生长有重要影响。5kPa高压生长和以ZnO为衬底均有利于ZnMgO薄膜中Mg的掺入。

关键词： ZnMgO薄膜衬底生长压强

Photoelectric Properties of Si-Si_(l-x)Ge_(x)-Ge Heterostructures for Infrared Detector

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Chinese Physics Letters 1997年第11期14卷 876-878页

作者： JIANG Ruo-lian JIANG Ning gu shu-lin LI Zhao XU Jun ZHU shun-ming HU Li-qun ZHENG You-dou Department of Physics Nanjing UniversityNanjing 210093

Si-Si_(l-x)Ge_(x)-Ge heterostructures with Ge fraction graded linearly from 1 to 0 have been epitaxially grown on Ge substrates by rapid,thermal process/very low pressure-chemical vapor *** peak value of the spectrum response for these structures ranges from 1.3 to 1.55μm,which is just in accordance with the optical fiber communication window,and considered to be the superposition of the response in Si_(l-x)Ge_(x) absorption region and the Ge absorption *** detecting sensitivity,and low dark current have been achieved from the prototype SiGe ptype intrinsic n-type photodetectors made of these structures.

关键词： fiber absorption Infrared

MOCVD法生长ZnO薄膜时氧源t-BuOH和H2O的比较研究

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发光学报 2012年第6期33卷 665-668页

作者：朱顺明黄时敏顾书林朱振邦顾然郑有炓南京大学电子科学与工程学院南京微结构国家实验室江苏南京210093

以活性较低的叔丁醇(t-BuOH)和水(H2O)作为氧源,采用MOCVD技术生长了ZnO薄膜。研究发现,t-BuOH作为氧源可以有效地抑制其与锌源之间的气相预反应,比H2O作为氧源进行ZnO薄膜的外延生长具有更高的生长速率,得到的ZnO薄膜晶体质量更优,同... 详细信息

以活性较低的叔丁醇(t-BuOH)和水(H2O)作为氧源,采用MOCVD技术生长了ZnO薄膜。研究发现,t-BuOH作为氧源可以有效地抑制其与锌源之间的气相预反应,比H2O作为氧源进行ZnO薄膜的外延生长具有更高的生长速率,得到的ZnO薄膜晶体质量更优,同时载流子的迁移率可以达到37.0 cm2.V-1.s-1,表明t-BuOH更适合作为氧源通过MOCVD系统生长ZnO薄膜。

关键词： ZnO MOCVD 氧源 t-BuOH

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创新的强化学习:成功赶超的关键

管理工程学报 2000年第B12期14卷 40-43页

作者：顾淑林范保群联合国大学新技术研究所

本文旨在介绍一些想法与调查 ,这些想法与调查是最近在联合国大学新技术研究所对发展中国家的国家创新系统的研究中取得的进展。追随斯基台人将创新视作经济增长发动机的传统 ,我们相信这同样甚至更加适用于发展中国家 ,并且认为发展中... 详细信息

本文旨在介绍一些想法与调查 ,这些想法与调查是最近在联合国大学新技术研究所对发展中国家的国家创新系统的研究中取得的进展。追随斯基台人将创新视作经济增长发动机的传统 ,我们相信这同样甚至更加适用于发展中国家 ,并且认为发展中国家所处的不发达的状况可理解为从根本上是由于缺乏学习和创新所导致的。创新的强化学习以及学习的制度支撑是主要问题。国家创新系统方法所带来的一个系统观点十分重视创新学习的制度维。

关键词：强化学习国家创新系统创新学习知识全球化发展中国家能力增长

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柱状ZnO阵列薄膜的生长及其发光特性

物理学报 2006年第3期55卷 1398-1401页

作者：刘红霞周圣明李抒智杭寅徐军顾书林张荣中国科学院上海光学精密机械研究所南京大学物理系南京210093

采用一种设备简单、原料低廉的新型方法,在镀有ZnO先驱薄膜的(0001)蓝宝石上利用水热法制备出了柱状ZnO阵列薄膜.用扫描电镜(SEM),X射线衍射(XRD)对样品的形貌和结构进行了表征,结果显示ZnO薄膜为柱状阵列,基于蓝宝石衬底沿c轴择优生长,... 详细信息

采用一种设备简单、原料低廉的新型方法,在镀有ZnO先驱薄膜的(0001)蓝宝石上利用水热法制备出了柱状ZnO阵列薄膜.用扫描电镜(SEM),X射线衍射(XRD)对样品的形貌和结构进行了表征,结果显示ZnO薄膜为柱状阵列,基于蓝宝石衬底沿c轴择优生长,且(0004)摇摆曲线半高宽度(FWHM)约为1·8°.此ZnO阵列薄膜具有很强的紫外发射光谱(PL).

关键词：柱状ZnO阵列薄膜水热法 (0001)蓝宝石 PL谱