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量子链和量子点光学特性的比较研究

红外与毫米波学报 2008年第3期27卷 161-164,189页

作者：王宝瑞孙征徐仲英孙宝权姬扬 Z.M.Wang g.j.salamo 中科院半导体研究所超晶格国家重点实验室北京100083 Department of Physics University of ArkansasArkansasUSA

比较研究了IngaAs/gaAs量子链和量子点的稳态和瞬态光学特性.实验发现,量子链的荧光寿命有很强的探测能量依赖关系,而量子点的荧光寿命随能量变化较小;量子链的荧光寿命随着激发功率迅速增加,高功率时趋于饱和,而量子点的荧光寿命随激... 详细信息

比较研究了IngaAs/gaAs量子链和量子点的稳态和瞬态光学特性.实验发现,量子链的荧光寿命有很强的探测能量依赖关系,而量子点的荧光寿命随能量变化较小;量子链的荧光寿命随着激发功率迅速增加,高功率时趋于饱和,而量子点的荧光寿命随激发功率变化缓慢;此外,量子链样品的荧光上升时间也比量子点的小得多.这些结果清楚表明,在量子链结构中,参与发光的载流子之间存在很强的耦合和输运.进一步分析表明,这种耦合作用主要发生在量子链方向.荧光的偏振特性进一步证实了这一点.

关键词： IngaAs/gaAs 量子点量子链光学性质

IngaAs/gaAs量子链的光学特性研究

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物理学报 2008年第3期57卷 1908-1912页

作者：王宝瑞孙征徐仲英孙宝权姬扬 Z. M. Wang g.j. salamo 中科院半导体研究所超品格国家重点实验室北京100083 Department of Physics University of Arkansas

研究了IngaAs/gaAs量子链的稳态和瞬态光谱特性,特别是载流子的动力学过程.实验发现荧光寿命有很强的探测能量依赖关系,荧光寿命随发光能量的增加而减小;实验还发现,当激发功率较小时,荧光寿命随激发功率增大而增大,当激发功率足够大时... 详细信息

研究了IngaAs/gaAs量子链的稳态和瞬态光谱特性,特别是载流子的动力学过程.实验发现荧光寿命有很强的探测能量依赖关系,荧光寿命随发光能量的增加而减小;实验还发现,当激发功率较小时,荧光寿命随激发功率增大而增大,当激发功率足够大时,荧光寿命趋于饱和.这些结果清楚地表明,在量子链结构中,参与发光的载流子之间存在明显的耦合和输运现象,进一步分析表明,这种输运主要是由于载流子沿量子链方向的耦合造成的.发光的偏振特性研究进一步证实了载流子沿量子链方向输运过程.

关键词： IngaAs/gaAs 量子点量子链光学特性载流子纳米结构

IngaAs/gaAs量子点链状结构光学性质的研究

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InGaAs/GaAs量子点链状结构光学性质的研究

Coherent-interface-induced strain in large lattice-mismatched materials:A new approach for modeling Raman shift

第十六届全国半导体物理学术会议

作者：王宝瑞徐仲英孙宝权姬扬孙征 Z.M.Wang g.j.salamo

＜正＞由于三维量子限制效应,半导体量子点材料具有独特的光学和电学性质。整齐有序的量子点阵列也广泛引起了研究者的兴趣,有报道发现在 gaAs（100）半绝缘衬底上生长 IngaAs 多层量子点结构会在[01-1]方向形成类似量子线的量子点链状...

＜正＞由于三维量子限制效应,半导体量子点材料具有独特的光学和电学性质。整齐有序的量子点阵列也广泛引起了研究者的兴趣,有报道发现在 gaAs（100）半绝缘衬底上生长 IngaAs 多层量子点结构会在[01-1]方向形成类似量子线的量子点链状结构（Quantum dot chains）。

关键词：

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Nano Research 2022年第3期15卷 2405-2412页

作者： Andrian V.Kuchuk Fernando Mde Oliveira Pijush K.ghosh Yuriy I.Mazur Hryhorii V.Stanchu Marcio D.Teodoro Morgan E.Ware gregory j.salamo Institute for Nanoscience and Engineering University of ArkansasFayettevilleAR 72701USA Departamento de Física Universidade Federal de São CarlosSão CarlosSP 13565-905Brazil Department of Electrical Engineering University of ArkansasFayettevilleAR 72701USA

Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of III-nitrides requires reliable methods for strain *** this work,we reveal,that the linear model based on the experimental data limited to within a small range of biaxial strains(group-III nitrides gaN and ***,we found that the discrepancy between the experimental values of strain and those calculated via Raman spectroscopy increases as the strain in both gaN and AlN ***,a new model has been developed to describe the strain-induced Raman frequency shift in gaN and AlN for a wide range of biaxial strains(up to 2.5%).Finally,we proposed a new approach to correlate the Raman frequency shift and strain,which is based on the lattice coherency in the epitaxial layers of superlattice structures and can be used for a wide range of materials.

关键词： Raman spectroscopy strain lattice coherency III-nitrides high-resolution X-ray diffraction(HRXRD)

Holed Nanostructures Formed by Aluminum Droplets on a gaAs Substrate

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Nano Research 2010年第7期3卷 490-495页

作者： Alvason Zhenhua Li Zhiming M.Wang jiang Wu gregory j.salamo Institute of Nanoscale Science and Engineering University of ArkansasFayettevilleArkansas 72701USA

We have studied the morphology evolution of holed nanostructures formed by aluminum droplet epitaxy on a gaAs *** outer rings with concentric inner holed rings were ***,an empirical equation to describe the size distribution of the outer rings in the holed nanostructures has been *** contour line generated by the equation provides physical insights into quantum ring formation by droplets of groupⅢmaterials onⅢ-Ⅴsubstrates.

关键词： Droplet epitaxy aluminum droplets MBE gaAs holed nanostructures

Improvement in the calculation of anti-Stokes energy transfer and experimental justification based on Er_(0.01)Yb_xY_(1 0.01 x)VO_4 crystal

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Chinese Physics B 2010年第9期19卷 604-611页

作者：陈晓波卢建张蕴芝徐小灵冯宝华王策 gregory j. salamo 杨国建 Nuclear Science&Technology School and Analytical Testing Center Applied Optics Beijing Area Major LaboratoryBeijing Normal University Institute of Physics Chinese Academy of Sciences University Arkansas Department of PhysicsFayetteville

The improvement on the calculation of anti-Stokes energy transfer rate is studied in the present work. The additional proportion coefficient between Stokes and anti-Stokes light intensities of quantum Raman scattering theory as compared with the classical Raman theory is introduced to successfully describe the anti-Stokes energy transfer. The theoretical formula for the improvement on the calculation of anti-Stokes energy transfer rate is derived for the first time in this study. The correctness of introducing coefficient exp{△E/kT} from well-known Raman scatter theory is demonstrated also. Moreover, the experimental lifetime measurement in Er0.01YbxY1-0.01-xVO4 crystal is performed to justify the validity of our important improvement in the original phonon-assisted energy transfer theory for the first time.

关键词： improvement of anti-Stokes energy transfer Raman scattering quantum and classical theory Er0.01YbxY1-0.01-xVO4 crystal

Improved anti-Stokes energy transfer between rare earth ions in Er(0.5)Yb(9.5):FOV oxyfluoride vitroceramics explains the strong color reversal

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Chinese Physics B 2009年第12期18卷 5523-5533页

作者：陈晓波王策 gregory j.salamo Naruhito Sawanobori 康栋国 Masaaki Ohtsuka 杨国建彭芳麟 Applied Optics Beijing Area Major Laboratory Beijing Normal University University of Arkansas Department of PhysicsFayettevilleAR 72701USA Sumita Optical glass Inc.4-7-25 HarigayaUrawaSaitama338Japan Beijing Institute of Applied Physics and Computational Mathematics Applied Optics Beijing Area Major Laboratory and Physics Department Beijing Normal University

The widely used energy transfer theory is a foundation of luminescence, in which the rates of Stokes and anti-Stokes processes have the same calculation formula. An improvement on the anti-Stokes energy transfer to explain the fluorescence intensity reversal between the red and green fluorescence of Er（0.5）Yb（9.5）：FOV is reported in the present article. The range of the intensity reversal Z was measured to be 877. Dynamic processes for 16 levels were simulated. A coefficient, the improvement factor of the intensity ratio of Stokes to anti-Stokes processes in quantum Raman theory compared to classical Raman theory, is introduced to successfully describe the anti-Stokes energy transfer. A new method to calculate the distance between the rare earth ions, which is critical for the energy transfer calculation, is proposed. The validity of these important improvements is also proved by experiment.

关键词： improvement of anti-Stokes energy transfer nanomaterial Era+yb^3+ co-doped rare earth ion material

Ordered SrTiO_3 Nanoripples Induced by Focused Ion Beam

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Nano-Micro Letters 2012年第4期4卷 243-246页

作者： jiang Wu gang Chen Zhaoquan Zeng Shibin Li Xingliang Xu Zhiming M.Wang gregory j.salamo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Institute of Intelligent Optoelectronic Technology Zhejiang University of Technology Institute for Nanoscience and Engineering University of Arkansas

Ordered nanoripples on the niobium-doped SrTiO_3 surfaces were fabricated through focused ion beam bombardment. The surface morphology of the SrTiO_3 nanoripples was characterized using in situ focused ion beam/scanning electron microscopy. The well-aligned SrTiO_3 nanostructures were obtained under optimized ion irradiation conditions. The characteristic wavelength was measured as about 210 nm for different ion beam currents. The relationship between the ion irradiation time and current and SrTiO_3 surface morphology was analyzed. The presented method will be an effective supplement for fabrication of SrTiO_3 nanostructures that can be used for ferroelectric and electronic applications.

关键词： SrTiO3 focused ion beam nanoripple self-assembly

Site-controlled formation of IngaAs quantum nanostructures——Tailoring the dimensionality and the quantum confinement

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Nano Research 2013年第4期6卷 235-242页

作者： Baolai Liang Ping-Show Wong Thai Tran Vitaliy g. Dorogan Yuriy I. Mazur Morgan E. Ware gregory j. salamo Chih-Kang Shih Diana L. Huffaker California NanoSystems Institute University of California at Los Angeles CA 90095 USA Department of Physics University of Texas at Austin Austin Texas 78712 USA Department of Physics University of Arkansas Fayetteville AR 72701 USA

我们在量磁盘(QDks ) controllably 在顶(001 ) 上形成了的 IngaAs 上报导 nano 有图案的 gaAs 金字塔形的平台的方面。QDks 展览有特殊方面和改变的尺寸的金字塔形的形状，取决于 gaAs 金字塔形的缓冲区和扔的 IngaAs 的数量。QDks 的... 详细信息

我们在量磁盘(QDks ) controllably 在顶(001 ) 上形成了的 IngaAs 上报导 nano 有图案的 gaAs 金字塔形的平台的方面。QDks 展览有特殊方面和改变的尺寸的金字塔形的形状，取决于 gaAs 金字塔形的缓冲区和扔的 IngaAs 的数量。QDks 的形成被 IngaAs 层并且此后的增生解释小 IngaAs 岛的结合。整体 QDks 和激子的光致发光(PL ) 特征一起单个 QDks 展示证明我们可以完成转变从零维(0D ) 到二维(2D ) 有增加 QDk 的量结构尺寸。这转变提供灵活性连续地定制维数，随后，经由为设备应用的控制地点的自我装配的取向附生的半导体 nanostructures 的量监禁基于单个量组织。

关键词：半导体纳米结构 IngaAs 量子限制效应控制设备站点裁缝量子结构量子磁盘