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Photoluminescence of CdSe Nanowires Grown With and Without Metal Catalyst

Nano Research 2011年第4期4卷 343-359页

作者： Andrea Fasoli Alan Colli faustino martelli Simone Pisana Ping Heng Tan Andrea C. Ferrari Department of Engineering University of Cambridge Cambridge CB3 0FA UK Nokia Research Centre Broers Building （East Forum） Cambridge CB3 0GT UK lstituto per la Microelettronica e i Microsistemi del CNR 00133 Rome Italy SKLSM Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

We present temperature and power dependent photoluminescence measurements on CdSe nanowires synthesized via vapor-phase with and without the use of a metal catalyst. Nanowires produced without a catalyst can be optimized to yield higher quantum efficiency, and narrower and spatially uniform emission, when compared to the catalyst-assisted ones. Emission at energies lower than the band-edge is also found in both cases. By combining spatially-resolved photoluminescence and electron microscopy on the same nanowires, we show that catalyst-free nanowires exhibit a low-energy peak with sharp phonon replica, whereas for catalyst-assisted nanowires low-energy emission is linked to the presence of nanostructures with extended morphological defects.

关键词： CdSe nanowires photoluminescence

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Contactless Monitoring of the Diameter-Dependent Conductivity of GaAs Nanowires

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Nano Research 2010年第10期3卷 706-713页

作者： Fauzia Jabeen Silvia Rubini faustino martelli Alfonso Franciosi Andrei Kolmakov Luca Gregoratti Matteo Amati Alexei Barinov Andrea Goldoni Maya Kiskinova Sincrotrone Trieste S.C.P.A. Elettra LaboratoryArea Science ParkS.S.14Km.163.5I-34149 TriesteItaly Laboratorio TASC IOM-CNR Area Science ParkS.S.14Km.163.5I-34149 TriesteItaly Department of Physics Southern Illinois University Carbondale1245 Lincoln Dr.Neckers 478CarbondaleIL 62901-4401USA

Contactless monitoring with photoelectron microspectroscopy of the surface potential along individual nano-structures,created by the X-ray nanoprobe,opens exciting possibilities to examine quantitatively size-and surface-chemistry-effects on the electrical transport of semiconductor nanowires(NWs).Implementing this novel approach-which combines surface chemical microanalysis with conductivity measurements-we explored the dependence of the electrical properties of undoped GaAs NWs on the NW width,temperature and surface *** following the evolution of the Ga 3d and As 3d core level spectra,we measured the position-dependent surface potential along the GaAs NWs as a function of NW diameter,decreasing from 120 to~20 nm,and correlated the observed decrease of the conductivity with the monotonic reduction in the NW diameter from 120 to~20 *** of the GaAs NWs to oxygen ambient leads to a decrease in their conductivity by up to a factor of 10,attributed to the significant decrease in the carrier density associated with the formation of an oxide shell.

关键词： Semiconductor nanowires charge transport surface oxidation photoelectron X-ray microscopy charging GaAs

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