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High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication

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Nano Research 2014年第7期7卷 998-1006页

作者： Mark Triplett Hideki Nishimura Matthew Ombaba V. J. Logeeswarren Matthew Yee Kazim G. Polat Jin Y. Oh Takashi Fuyuki francois leonard M. Saif Islam Center for Nano and Micro Manufacturing and Department of Electrical and Computer Engineering University of California Davis CA 95616 USA Department of Physics University of California Davis CA 95515 USA Sandia National Laboratories Livermore CA 94551 USA Microelectronic Device Science Laboratory Nara Institute of Science and Technology Japan

Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible substrates in a vertical fashion. Complementary fabrication processes for integrating transferred arrays into flexible devices are also presented and characterized. Robust contacts to transferred silicon wire arrays are demonstrated and shown to be stable under flexing stress down to bending radii of 20 mm. The fabricated devices exhibit a reversible tactile response enabling silicon based, nonpiezoelectric, and flexible tactile sensors. The presented system leads the way towards high-throughput, manufacturable, and scalable fabrication of flexible devices.

关键词：半导体材料垂直阵列柔性基板制造工艺印刷方法高精度转印触觉传感器

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Visible-and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

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Photonics Research 2019年第6期7卷 I0026-I0033页

作者： ANDREW M.ARMSTRONG BRIANNA A.KLEIN ANDREW A.ALLERMAN ALBERT G.BACA MARY H.CRAWFORD JACOB PODKAMINER CARLOS R.PEREZ MICHAEL P.SIEGAL ERICA A.DOUGLAS VINCENT M.ABATE francois leonard Sandia National Laboratories Albuquerque New Mexico 87185 USA Current address: 3M Corporate Research Labs St. Paul Minnesota 55144 USA Sandia National Laboratories Livermore California 94550 USA

AlGaN-channel high electron mobility transistors(HEMTs) were operated as visible-and solar-blind photodetectors by using GaN nanodots as an optically active floating gate. The effect of the floating gate was large enough to switch an HEMT from the off-state in the dark to an on-state under illumination. This opto-electronic response achieved responsivity >10^8 A∕W at room temperature while allowing HEMTs to be electrically biased in the offstate for low dark current and low DC power dissipation. The influence of GaN nanodot distance from the HEMT channel on the dynamic range of the photodetector was investigated, along with the responsivity and temporal response of the floating gate HEMT as a function of optical intensity. The absorption threshold was shown to be controlled by the AlN mole fraction of the HEMT channel layer, thus enabling the same device design to be tuned for either visible-or solar-blind detection.

关键词： photodetectors high electron mobility transistors

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