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Deposition of Diamond Film on Aluminum Nitride Ceramics and the Study of Their Thermal Conductance

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Chinese Physics Letters 1996年第8期13卷 625-628页

作者： CHEN Hong ZHANG Ji-fa CUI Jing-biao fang rong-chuan Department of Physics University of Science and Technology of ChinaHefei 230026 Structure Research Laboratory University of Science and Technology of ChinaHefei 230026

Diamond films(DF)have been deposited on AlN ceramic substrates by hot filament chemical vapour deposition *** diamond nucleation on AlN ceramics has been investigated.A nucleation density more than 10^(8) cm^(-2) was obtained on this kind of insulating polycrystalline substrate under common deposition *** thermal conductance of the DF/AlN compound materials has been studied by photothermal deflection *** thermal diffusivity of the DF/AlN is higher than that of the AlN ceramics,and will increase as the diamond films grow thicker.

关键词： ceramics ceramic Diamond

Monoexponential Microsecond Decay of Blue Photoluminescence in Aged Porous Silicon Prepared with Ar^(+) 488nm

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Chinese Physics Letters 1998年第5期15卷 382-384页

作者： LI Peng MA Yu-rong WANG Guan-zhong fang rong-chuan Department of Physics University of Science and Technology of ChinaHefei 230026 Laboratory of Excited State Processes Changchun Institute of PhysicsChinese Academy of SciencesChangchun 130021

Blue photoluminescence is observed in aged porous silicon samples anodized under Ar^(+)488 nm laser *** samples have been undergone any heating treatment *** nanosecond and microsecond decay of blue photoluminescence have been *** show a good monoexponential microsecond decay with lifetimes of about 5.3μ*** excitation spectra of blue and red Photoluminescence indicate there is a large Stokes shift(about 800-900meV)in the excitation spectra of red photoluminescence while no this marked Stokes shift in that of blue *** possible origin of the photoluminescence is discussed based on the experimental results.

关键词： process. exponential Photoluminescence

Junction Current Drift Effect of the Cu/Porous Si Device Prepared by Electrodeposition

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Chinese Physics Letters 1997年第2期14卷 124-127页

作者： WANG Guan-zhong LI Peng MA Yu-rong fang rong-chuan Department of Physics University of Science and Technology of ChinaHefei 230026

A novel characteristic of the junction current drift effect in the Cu/porous silicon(Cu/PS)device prepared by electrodeposition in which Cu ions were deposited on porous silicon is *** junction current increases with time and gradually approaches to a saturated value when a certain forward bias is applied on the Cu/PS ***,after the bias was withdrawn for a period,a different drift process was observed when the same bias was applied *** drifttime constant and the initial current of latter drift process depend on cut-off *** an effect is explained in terms of the model that only part of electrons from porous silicon contributes to the junction current while other electrons are captured by the traps in the interface between Cu and porous silicon in the Cu/PS device.

关键词： porous effect Porous

Initial Growth of Thin Films with Low Nucleus Density and Linear Lateral Growth Rate on a Substrate Surface

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Chinese Physics Letters 2001年第8期18卷 1135-1137页

作者： SHAO Qing-Yi fang rong-chuan ZHU Kai-Gui LIAO Yuan XUE Zeng-Quan Structure Research Laboratory and Department of Physics University of Science and Technology of ChinaHefei 230026 Department of Electronics Peking UniversityBeijing 100871

Based on corrected rate equations,the kinetics is revealed for initial growth of thin films with low nucleus density and linear lateral growth rate on a substrate *** this case,the mobility and coalescence terms in rate equations are neglected,and the coverage term takes a dominant *** the calculated results are in agreement with experimental *** results introduce a new scaling in the case of dominant coverage,which is different from the those in the case of coalescence or mobility in a dominant role.

关键词： surface neglected kinetics

Interface Electronic Structure of Ge/ZnSe(111)

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Chinese Physics Letters 1997年第2期14卷 128-130页

作者： ZHANG Hai-feng WANG Chong-yu fang rong-chuan BAN Da-yan LI Yong-ping Central Iron and Steel Research Institute Beijing 100081 Department of Physics University of Science and Technology of ChinaHefei 230026

Using linear muffin-tin orbitals method with atomic sphere approximation,the interface electronic structure of Ge/ZnSe(111)has been *** density of states,local density of states as well as local partial density of states are *** interface electronic structure and the interaction characteristics between interface atoms are *** results show a significant effect of the interface atomic arrangement on the electronic structures.

关键词： ZnSe interface electronic

Effect of Growth Temperature on the Band Lineup of Ge/CdTe(111) Polar Interfaces

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Chinese Physics Letters 1997年第8期14卷 609-612页

作者： BAN Da-yan fang rong-chuan JI XUE Jian-geng LU Er-dong XU Peng-shou Department of Physics University of Science and Technology of ChinaHefei 230026 National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230026

By using synchrotron radiation photoelectron spectroscopy,the band lineup of Ge/CdTe(111)interfaces grown at different temperatures have been *** studies show that the valence band offset of Ge/CdTe(111)interface grown at room temperature is 0.88±0.1 eV,which agrees well with previously reported *** as for the interface grown at 280℃,an obvious reduction of valence band offsets is observed and attributed to sthe effect of different interface dipole.

关键词： value. interface valence

Thermal Conductivity of Diamond-Based Silicon-on-Insulator Structures

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Chinese Physics Letters 1996年第8期13卷 610-612页

作者： GU Chang-zhi JIN Zeng-sun LU Xiang-yi ZOU Guang-tian LU Jian-xia YAO Da ZHANG Ji-fa fang rong-chuan State key Laboratory of Superhard Materials Jilin UniversityChangchun 130023 Institute of Northeast Microelectron Shenyang 110032 Department of Physics University of Science and Technology of ChinaHefei 230026

Diamond films of various thickness(1-300μm)were deposited on single-crystal Si active(300μm)by a microwave plasma chemical vapor deposition method using gaseous mixtures of methane and *** thinning of the Si layer by machine and ion-beam polishing a diamond-based silicon-on-insulator structure with final Si layer thickness of about 1μm is *** conductivity of this structure material with various thicknesses of diamond and Si layer was *** with bulk silicon,the thermal conductivity of the siliconon-diamond structure with 300μm diamond and 1μm silicon increases by 850%.

关键词： Diamond conductivity structure

Enantioselective Synthesis of Benzimidazole Atropisomers Featuring a N-N Axis

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Chinese Journal of Chemistry 2024年第7期42卷 711-718页

作者： fang-Bei Ge Qi-Kun Yin chuan-Jun Lu Xuan Xuan Jia Feng Ren-rong Liu College of Chemistry and Chemical Engineering Qingdao UniversityQingdaoShandong 266071China School of Pharmacy Key Laboratory of Molecular Pharmacology and Drug EvaluationMinistry of EducationYantai UniversityYantaiShandong 264005China

Atroposelective synthesis of N-N atropisomers is an emerging area but remains underexplored;in particular,the synthesis of N-N benzimidazole atropisomers is still ***,the first enantioselective synthesis of N-N benzimidazole atropisomers via the palladium-catalyzed de novo construction of benzimidazole skeleton is *** readily available palladium catalyst and biphosphine ligand,a broad range of nonbiaryl benzimidazole and indole-benzimidazole atropisomers were conveniently ac-cessed in high yields and with excellent ***,these N-N benzimidazole atropisomers showed great anti-tumor activity and selectivity to breast cancer MCF-7 *** simple catalytic system,broad substrate scope,high enantioselectivi-ty,and good bioactivity make this approach highly attractive.

关键词： Asymmetric synthesis Atropisomerism Palladium Benzimidazole Antitumor

Investigation of Diamond Films Deposited on LaAlO_(3) Single Crystal Substrates by Hot Filament Chemical Vapor Deposition

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Chinese Physics Letters 1998年第2期15卷 146-148页

作者： SHANG Nai-gui fang rong-chuan HANG Yin LI Jin-qiu HAN Si-jin SHAO Qing-yi CUI Jing-biao XU Cun-yi Department of Physics University of Science and Technology of ChinaHefei 230026 Structure Research Laboratory University of Science and Technology of ChinaHefei 230026 Anhui Institute of Optics and Fine Mechanics Chinese Academy of SciencesHefei 230026

Diamond nucleation and growth on a LaAlO_(3) single crystal substrate,whose lattice mismatch with diamond is only 7.2%at high temperature,were investigated for the first *** an insulating substrate,a nucleation density of more than 108 cm_(-2) was achieved on ultrasonically cleaned wafers.A free-standing diamond film was obtained for 65 h growth and characterized by scanning electron microscopy,Raman and x-ray photoelectron *** results show that LaAIO3 single crystal is a good candidate substrate for diamond film growth.

关键词： spectroscopy. Diamond film