检索结果-南通市图书馆

Advanced Photonics 2024年第3期6卷 60-69页

作者： Antoine Henry Dario A.Fioretto Lorenzo M.Procopio Stéphane Monfray Frédéric Boeuf Laurent Vivien eric cassan Carlos Alonzo-Ramos Kamel Bencheikh Isabelle Zaquine Nadia Belabas Institut Polytechnique de Paris LTCI Université Paris-Saclay CNRS Centre for Nanosciences and Nanotechnology Weizmann Institute of Science STMicroelectronics SAS

Harnessing the frequency dimension in integrated photonics offers key advantages in terms of scalability, noise resilience, parallelization, and compatibility with telecom multiplexing *** ring resonators have been used to generate frequency-entangled states through spontaneous four-wave mixing. However, state-of-the-art integrated resonators are limited by trade-offs among size,spectral separation, and efficient photon pair generation. We have developed silicon ring resonators with a footprint below 0.05 mm2providing more than 70 frequency channels separated by 21 GHz. We exploit the narrow frequency separation to parallelize and independently control 34 single qubit-gates with a single set of three off-the-shelf electro-optic devices. We fully characterize 17 frequency-bin maximally entangled qubit pairs by performing quantum state tomography. We demonstrate for the first time, we believe, a fully connected five-user quantum network in the frequency domain. These results are a step towards a generation of quantum circuits implemented with scalable silicon photonics technology, for applications in quantum computing and secure communications.

关键词： frequency domain integrated photonics quantum gates quantum networks

Enhanced mid-to-near-infrared second harmonic generation in silicon plasmonic microring resonators with low pump power

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Photonics Research 2014年第5期2卷 143-149页

作者： Jihua Zhang eric cassan Xinliang Zhang Wuhan National Laboratory for Optoelectonics&School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China Institut d’Electronique Fondamentale UniversitéParis-SudOrsay 91405France e-mail:eric.cassan@u‑psud.fr

We propose an efficient and low-power second harmonic generation(SHG)process in a silicon-compatible hybrid plasmonic microring *** making the microring resonator doubly resonant at the fundamental wavelength of 3.1μm and second harmonic wavelength of 1.55μm,the SHG efficiency is enhanced by almost two orders of magnitude when compared to the previous result induced in a straight plasmonic waveguide.A SHG efficiency of 13.71%is predicted for a low pump power of 20 mW in a ring with radius of 2.325μ*** device provides a potential route for realizing efficient frequency conversion between mid-infrared and near-infrared wavebands on a chip.

关键词： pump resonator power

Stretching the spectra of Kerr frequency combs with self-adaptive boundary silicon waveguides

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Advanced Photonics 2020年第4期2卷 29-38页

作者： Jianhao Zhang Vincent Pelgrin Carlos Alonso-Ramos Laurent Vivien Sailing He eric cassan UniversitéParis-Saclay CNRSCentre de Nanosciences et de NanotechnologiesPalaiseauFrance Zhejiang University Centre for Optical and Electromagnetic ResearchState Key Laboratory for Modern Optical InstrumentationHangzhouChina

Dispersion engineering of optical waveguides is among the most important steps in enabling the realization of Kerr optical frequency combs.A recurring problem is the limited bandwidth in which the nonlinear phase matching condition is satisfied,due to the dispersion of the *** limitation is particularly stringent in high-index-contrast technologies such as *** propose a general approach to stretch the bandwidth of Kerr frequency combs based on subwavelength engineering of single-mode waveguides with self-adaptive *** wideband flattened dispersion operation comes from the particular property of the waveguide optical mode that automatically self-adapts its spatial profile at different wavelengths to slightly different effective spatial spans determined by its effective index *** flattened dispersion relies on the squeezing of small normal-dispersion regions between two anomalous spectral zones,which enables it to achieve two Cherenkov radiation points and substantially broaden the comb,achieving a bandwidth between 2.2 and 3.4μm *** strategy opens up a design space for trimming the spectra of Kerr frequency combs using high-index-contrast platforms and can provide benefits to various nonlinear applications in which the manipulation of energy spacing and phase matching are pivotal.

关键词： nonlinear optics effective boundary subwavelength grating silicon frequency comb

Nonlinear integrated photonics

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2018年第5期6卷 I0024-I0025页

作者： eric cassan CHRISTIAN GRILLET DRAGOMIR N.NESHEV DAVID J.MOSS Centre for Nanosciences and Nanotechnologies (C2N) Paris-Sud University CNRS Senior research fellow continuing position Institut des Nanotechnologies de Lyon (INL)Ecole centrale de Lyon Nonlinear Physics Centre Australian National University Director of the Center for Micro-Photonics (CMP) Swinburne University of Technology

The field of nonlinear photonics is in full development. This special issue of Photonics Research takes you through the current issues of this fast-growing field of research, drawing on the current state of the art an... 详细信息

关键词： Nonlinear integrated photonics full development

Hybrid integration of 2D materials for on-chip nonlinear photonics

在线全文

学校读者我要写书评

暂无评论

Light(Advanced Manufacturing) 2023年第3期4卷 311-333页

作者： Vincent Pelgrin Hoon Hahn Yoon eric cassan Zhipei Sun QTF Centre of Excellence Department of Electronics and NanoengineeringAalto UniversityP.O.Box 13500FI-00076 AaltoFinland UniversitéParis-Saclay CNRSCentre de Nanosciences et de Nanotechnologies91120PalaiseauFrance

Interests surrounding the development of on-chip nonlinear optical devices have been consistently growing in the past decades due to the tremendous applications,such as quantum photonics,all-optical communications,optical computing,on-chip metrology,and *** efficient on-chip nonlinear optical devices to meet the requirements of those applications brings the need for new directions to improve the existing photonic *** research has directed the field of on-chip nonlinear optics toward the hybrid integration of two-dimensional layered materials(such as graphene,transition metal dichalcogenides,and black phosphorous)with various integrated *** combination of well-known photonic chip design platforms(e.g.,silicon,silicon nitride)and different two-dimensional layered materials has opened the road for more versatile and efficient structures and devices,which has the great potential to unlock numerous new *** review discusses the modeling and characterization of different hybrid photonic integration structures with two-dimensional materials,highlights the current state of the art examples,and presents an outlook for future prospects.

关键词： Integrated photonics 2D materials Nanophotonic Nonlinear optics Quantum computation All-optical computing Spectroscopy Broadband light sources

Large group-index bandwidth product empty core slow light photonic crystal waveguides for hybrid silicon photonics

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Frontiers of Optoelectronics 2014年第3期7卷 376-384页

作者： Charles CAER Xavier LE ROUX Samuel SERNA Weiwei ZHANG Laurent VIVIEN eric cassan Institut d'Electronique Fondamentale University Paris-Sud CNRS UMR 8622 Bat. 220 91405 Orsay Cedex France

This paper investigates the slow light propaga- tion in silicon on insulator wide slot photonic crystal waveguides （PCWs）. Two design schemes are presented, relying on the dispersion engineering of hole lattice and slot, respectively. Mode patterns and band diagrams are calculated by 3D-plane wave expansion method. Then, coupling and slow light propagations are modeled using finite difference time domain method in a full Mach- Zehnder interferometer （MZI）. Results show high amplitudes interference fringes and high coupling efficiencies. Fabrication and measurement of devices lead to slow light propagation with group indices above 50, while multiple scattering and localized modes near the band edge also observed. This study provides insights for losses in hollow core slot high group index waveguides.

关键词： silicon photonics photonic crystals (PC) slot waveguides slow waves

Mode selection and dispersion engineering in Bragg-like slot photonic crystal waveguides for hybrid light-matter interactions

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2018年第1期9卷 54-60页

作者： samuel serna weiwei zhang thi hong cam hoang carlos alonso-ramos delphine marris-morini laurent vivien eric cassan Centre de Nanosciences et de Nanotechnologies UMR 9001 (CNRS/Universite Paris-Sud) Universite Paris-Saclay 91405 Orsay France

We introduce a family of slot photonic crystal waveguides(SPh CWs) for the hybrid integration of low-index active materials in silicon photonics with energy-confinement factors of ~30% in low-index regions. The proposed approach, which is based on a periodic indentation of the etched slot in the middle of the SPh CW, makes it possible to reconcile a simultaneously narrow and wide slot for exploiting the two modes of even symmetry of a SPh CW. The resulting mode-selection mechanism allows a flexible choice of the modes to be used. Furthermore,the proposed structure offers tremendous flexibility for adjusting the dispersive properties of the slot-confined modes, in particular of their slow-light effects. Flat band slow light in a bandwidth of about 60 nm with a group velocity dispersion factor jβ_2 j below 1 ps^2∕mm is numerically demonstrated by this approach, corresponding to a normalized delay bandwidth product of around 0.4. These results, obtained from hollow-core periodic waveguides that are directly designed in view of hybrid integration of active materials in mechanically robust structures(not based on free-standing membranes) could pave the way for the realization of on-chip slow-light bio-sensing,active hybrid-silicon optoelectronic devices, or all-optical hybrid-silicon nonlinear functionalities.

关键词：光子晶体波导通讯技术发展现状

Nonlinear optical properties of integrated GeSbS chalcogenide waveguides

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2018年第5期6卷 I0062-I0067页

作者： SAMUEL SERNA HONGTAO LIN CARLOS ALONSO-RAMOS ANUPAMA YADAV XAVIER LE ROUX KATHLEEN RICHARDSON eric cassan NICOLAS DUBREUIL JUEJUN HU LAURENT VIVIEN Centre de Nanosciences et de Nanotechnologies (C2N) CNRS Univ.Paris-Sud Université Paris SaclayC2N Orsay Laboratoire Charles Fabry Institut d'Optique Graduate SchoolCNRS Université Paris Saclay Department of Materials Science and Engineering Massachusetts Institute of Technology-MIT College of Optics and Photonics-CREOL University of Central Florida

In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 （GeSbS） chalcogenide glass waveguides in the near-infrared wavdength range at λ = 1580 nm. We measured a waveguide nonlinear parameter of 7.0 4- 0.7 W-1 · m-1, which corresponds to a nonlinear refractive index of n2 =（0.93 ± 0.08） ×10-18 m2/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA = （0.010± 0.003） cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOM TPA = 6.0 ± 1.4 at λ = 1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.

关键词： Nonlinear optical properties integrated GeSbS chalcogenide waveguides

Silicon slow light photonic crystals structures:present achievements and future trends

在线全文

学校读者我要写书评

暂无评论

Frontiers of Optoelectronics 2011年第3期4卷 243-253页

作者： eric cassan Xavier LE ROUX Charles CAER Ran HAO Damien BERNIER Delphine MARRIS-MORINI Laurent VIVIEN Institut d'Electronique Fondamentale Université Paris-Sud CNRS UMR 8622

Slow light in planar photonic structures has attracted for some years an increasing interest due to amazing physical effects it allows or reinforces and to the degrees of freedom it raises for designing new optical functions. Controlling light group velocity is achieved through the use of periodical optical media obtained by nano-structuration of semiconductor wafers at the scale of light wavelength: the so-called photonic crystals. This article reviews present achievements realized in the field of slow light photonic bandgap structures, including the physical principles of slow light to the description of the most advanced integrated optical devices relying on *** and current hot topics related to slow light are discussed to highlight the balance between the advantages and drawbacks of using slow waves in integrated photonic structures. Then, future trends are described, which is focused on the use of slow wave slot waveguides for nonlinear optics and bio-photonic applications.

关键词： slow light photonic crystals silicon photonics integrated optical devices

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Photonics Research 2020年第3期8卷 352-358页

作者： CHRISTIAN LAFFORGUE SYLVAIN GUERBER JOAN MANEL RAMIREZ GUILLAUME MARCAUD CARLOS ALONSO-RAMOS XAVIER LE ROUX DELPHINE MARRIS-MORINI eric cassan CHARLES BAUDOT FRéDéRIC BOEUF SéBASTIEN CREMER STéPHANE MONFRAY LAURENT VIVIEN Centre for Nanoscience and Nanotechnology(C2N) CNRSUniversitéParis-SudUniversitéParis-SaclayUMR 900191405 Orsay CedexFrance Technologie R&D STMicroelectronicsSAS850 rue Jean Monnet38920 CrollesFrance III-V lab a joint venture from Nokia Bell LabsThales and CEA1 Avenue Augustin Fresnel91767 Palaiseau CedexFrance

We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm *** pumping in the anomalous dispersion regime at a wavelength of 1200 nm,two-octave spanning spectra covering the visible and near-infrared ranges,including the O band,were *** calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride,despite the lower silicon content.N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

关键词： waveguides pumping nitride