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Photonics Research 2014年第5期2卷 143-149页

作者： Jihua Zhang eric cassan Xinliang Zhang Wuhan National Laboratory for Optoelectonics&School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China Institut d’Electronique Fondamentale UniversitéParis-SudOrsay 91405France e-mail:eric.cassan@u‑psud.fr

We propose an efficient and low-power second harmonic generation(SHG)process in a silicon-compatible hybrid plasmonic microring *** making the microring resonator doubly resonant at the fundamental wavelength of 3.1μm and second harmonic wavelength of 1.55μm,the SHG efficiency is enhanced by almost two orders of magnitude when compared to the previous result induced in a straight plasmonic waveguide.A SHG efficiency of 13.71%is predicted for a low pump power of 20 mW in a ring with radius of 2.325μ*** device provides a potential route for realizing efficient frequency conversion between mid-infrared and near-infrared wavebands on a chip.

关键词： pump resonator power

Stretching the spectra of Kerr frequency combs with self-adaptive boundary silicon waveguides

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Advanced Photonics 2020年第4期2卷 29-38页

作者： Jianhao Zhang Vincent Pelgrin Carlos Alonso-Ramos Laurent Vivien Sailing He eric cassan UniversitéParis-Saclay CNRSCentre de Nanosciences et de NanotechnologiesPalaiseauFrance Zhejiang University Centre for Optical and Electromagnetic ResearchState Key Laboratory for Modern Optical InstrumentationHangzhouChina

Dispersion engineering of optical waveguides is among the most important steps in enabling the realization of Kerr optical frequency combs.A recurring problem is the limited bandwidth in which the nonlinear phase matching condition is satisfied,due to the dispersion of the *** limitation is particularly stringent in high-index-contrast technologies such as *** propose a general approach to stretch the bandwidth of Kerr frequency combs based on subwavelength engineering of single-mode waveguides with self-adaptive *** wideband flattened dispersion operation comes from the particular property of the waveguide optical mode that automatically self-adapts its spatial profile at different wavelengths to slightly different effective spatial spans determined by its effective index *** flattened dispersion relies on the squeezing of small normal-dispersion regions between two anomalous spectral zones,which enables it to achieve two Cherenkov radiation points and substantially broaden the comb,achieving a bandwidth between 2.2 and 3.4μm *** strategy opens up a design space for trimming the spectra of Kerr frequency combs using high-index-contrast platforms and can provide benefits to various nonlinear applications in which the manipulation of energy spacing and phase matching are pivotal.

关键词： nonlinear optics effective boundary subwavelength grating silicon frequency comb

Nonlinear integrated photonics

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Photonics Research 2018年第5期6卷 I0024-I0025页

作者： eric cassan CHRISTIAN GRILLET DRAGOMIR N.NESHEV DAVID J.MOSS Centre for Nanosciences and Nanotechnologies (C2N) Paris-Sud University CNRS Senior research fellow continuing position Institut des Nanotechnologies de Lyon (INL)Ecole centrale de Lyon Nonlinear Physics Centre Australian National University Director of the Center for Micro-Photonics (CMP) Swinburne University of Technology

The field of nonlinear photonics is in full development. This special issue of Photonics Research takes you through the current issues of this fast-growing field of research, drawing on the current state of the art an... 详细信息

关键词： Nonlinear integrated photonics

Supercontinuum generation in silicon photonics platforms

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Photonics Research 2022年第3期10卷 I0009-I0022页

作者： Christian Lafforgue Miguel Montesinos-Ballester Thi-Thuy-Duong Dinh Xavier Le Roux eric cassan Delphine Marris-Morini Carlos Alonso-Ramos Laurent Vivien Centre de Nanosciences et de Nanotechnologies(C2N) CNRSUniversitéParis-Saclay91120 PalaiseauFrance

Nonlinear optics has not stopped evolving,offering opportunities to develop novel functionalities in *** generation,a nonlinear optical phenomenon responsible for extreme spectral broadening,attracts the interest of researchers due to its high potential in many applications,including sensing,imaging,or optical *** particular,with the emergence of silicon photonics,integrated supercontinuum sources in silicon platforms have seen tremendous progress during the past *** article aims at giving an overview of supercontinuum generation in three main silicon-compatible photonics platforms,namely,silicon,silicon germanium,and silicon nitride,as well as the essential theoretical elements to understand this fascinating phenomenon.

关键词： offering photonics Super

Large group-index bandwidth product empty core slow light photonic crystal waveguides for hybrid silicon photonics

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Frontiers of Optoelectronics 2014年第3期7卷 376-384页

作者： Charles CAER Xavier LE ROUX Samuel SERNA Weiwei ZHANG Laurent VIVIEN eric cassan Institut d'Electronique Fondamentale University Paris-Sud CNRS UMR 8622 Bat. 220 91405 Orsay Cedex France

This paper investigates the slow light propaga- tion in silicon on insulator wide slot photonic crystal waveguides （PCWs）. Two design schemes are presented, relying on the dispersion engineering of hole lattice and slot, respectively. Mode patterns and band diagrams are calculated by 3D-plane wave expansion method. Then, coupling and slow light propagations are modeled using finite difference time domain method in a full Mach- Zehnder interferometer （MZI）. Results show high amplitudes interference fringes and high coupling efficiencies. Fabrication and measurement of devices lead to slow light propagation with group indices above 50, while multiple scattering and localized modes near the band edge also observed. This study provides insights for losses in hollow core slot high group index waveguides.

关键词： silicon photonics photonic crystals (PC) slot waveguides slow waves

Mode selection and dispersion engineering in Bragg-like slot photonic crystal waveguides for hybrid light-matter interactions

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Photonics Research 2018年第1期9卷 54-60页

作者： samuel serna weiwei zhang thi hong cam hoang carlos alonso-ramos delphine marris-morini laurent vivien eric cassan Centre de Nanosciences et de Nanotechnologies UMR 9001 (CNRS/Universite Paris-Sud) Universite Paris-Saclay 91405 Orsay France

We introduce a family of slot photonic crystal waveguides(SPh CWs) for the hybrid integration of low-index active materials in silicon photonics with energy-confinement factors of ~30% in low-index regions. The proposed approach, which is based on a periodic indentation of the etched slot in the middle of the SPh CW, makes it possible to reconcile a simultaneously narrow and wide slot for exploiting the two modes of even symmetry of a SPh CW. The resulting mode-selection mechanism allows a flexible choice of the modes to be used. Furthermore,the proposed structure offers tremendous flexibility for adjusting the dispersive properties of the slot-confined modes, in particular of their slow-light effects. Flat band slow light in a bandwidth of about 60 nm with a group velocity dispersion factor jβ_2 j below 1 ps^2∕mm is numerically demonstrated by this approach, corresponding to a normalized delay bandwidth product of around 0.4. These results, obtained from hollow-core periodic waveguides that are directly designed in view of hybrid integration of active materials in mechanically robust structures(not based on free-standing membranes) could pave the way for the realization of on-chip slow-light bio-sensing,active hybrid-silicon optoelectronic devices, or all-optical hybrid-silicon nonlinear functionalities.

关键词：光子晶体波导通讯技术发展现状

Nonlinear optical properties of integrated GeSbS chalcogenide waveguides

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Photonics Research 2018年第5期6卷 I0062-I0067页

作者： SAMUEL SERNA HONGTAO LIN CARLOS ALONSO-RAMOS ANUPAMA YADAV XAVIER LE ROUX KATHLEEN RICHARDSON eric cassan NICOLAS DUBREUIL JUEJUN HU LAURENT VIVIEN Centre de Nanosciences et de Nanotechnologies (C2N) CNRS Univ.Paris-Sud Université Paris SaclayC2N Orsay Laboratoire Charles Fabry Institut d'Optique Graduate SchoolCNRS Université Paris Saclay Department of Materials Science and Engineering Massachusetts Institute of Technology-MIT College of Optics and Photonics-CREOL University of Central Florida

In this paper, we report the experimental characterization of highly nonlinear Ge Sb S chalcogenide glass *** used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23 Sb7 S70(GeSbS) chalcogenide glass waveguides in the near-infrared wavelength range at λ =1580 nm. We measured a waveguide nonlinear parameter of 7.0±0.7 W^(-1)· m(-1), which corresponds to a nonlinear refractive index of n_2=0.93±0.08 × 10^(-18) m^2∕W,comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA=0.010± 0.003 cm∕GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of Ge Sb S, with a measured nonlinear figure of merit FOMTPA=6.0 ±1.4 at λ =1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.

关键词： Sb Nonlinear optical properties of integrated GeSbS chalcogenide waveguides

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications[Invited]

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Photonics Research 2013年第3期1卷 140-147页

作者： Léopold Virot Laurent Vivien Jean-Marc Fédéli Yann Bogumilowicz Jean-Michel Hartmann Frédéric Bœuf Paul Crozat Delphine Marris-Morini eric cassan Institut d’Electronique Fondamentale(IEF) Univ.Paris-SudCNRSBât 220F-91405 OrsayFrance CEA LETIMinatec Campus17 rue des MartyrsF-38054 GrenobleFrance STMicroelectronics Silicon Technology DevelopmentCrollesFrance

This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications.200 mm wafers and production tools were used to fabricate the *** over 97%were obtained for three different compact photodiodes(10×10μm and intrinsic region width of 0.5,0.7,and 1μm)within the same batch of three *** photodiodes exhibit low dark currents under reverse bias with median values of 74,62,and 61 nA for intrinsic widths of 0.5,0.7,and 1μm,respectively,over a full *** up to 0.78 A∕W at 1550 nm and zero bias were *** bias operation is possible for 25 and 40 Gbps with receiver sensitivity estimated to−13.9 and−12.3 dBm,respectively.

关键词： waveguide optical communication

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

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Photonics Research 2020年第3期8卷 352-358页

作者： CHRISTIAN LAFFORGUE SYLVAIN GUERBER JOAN MANEL RAMIREZ GUILLAUME MARCAUD CARLOS ALONSO-RAMOS XAVIER LE ROUX DELPHINE MARRIS-MORINI eric cassan CHARLES BAUDOT FRéDéRIC BOEUF SéBASTIEN CREMER STéPHANE MONFRAY LAURENT VIVIEN Centre for Nanoscience and Nanotechnology(C2N) CNRSUniversitéParis-SudUniversitéParis-SaclayUMR 900191405 Orsay CedexFrance Technologie R&D STMicroelectronicsSAS850 rue Jean Monnet38920 CrollesFrance III-V lab a joint venture from Nokia Bell LabsThales and CEA1 Avenue Augustin Fresnel91767 Palaiseau CedexFrance

We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm *** pumping in the anomalous dispersion regime at a wavelength of 1200 nm,two-octave spanning spectra covering the visible and near-infrared ranges,including the O band,were *** calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride,despite the lower silicon content.N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

关键词： waveguides pumping nitride

Third-order nonlinear optical susceptibility of crystalline oxide yttria-stabilized zirconia

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Photonics Research 2020年第2期8卷 110-120页

作者： GUILLAUME MARCAUD SAMUEL SERNA KARAMANIS PANAGHIOTIS CARLOS ALONSO-RAMOS XAVIER LE ROUX MATHIAS BERCIANO THOMAS MAROUTIAN GUILLAUME AGNUS PASCAL AUBERT ARNAUD JOLLIVET ALICIA RUIZ-CARIDAD LUDOVIC LARGEAU NATHALIE ISAC eric cassan SYLVIA MATZEN NICOLAS DUBREUIL MICHEL RERAT PHILIPPE LECOEUR LAURENT VIVIEN Centre de Nanosciences et Nanotechnologies(C2N) Université-Paris-SudCNRS UMR 9001Universite Paris-SaclayOrsay 91405France Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridgeMasschusetts 02139USA Department of Physics Bridgewater State UniversityBridgewaterMassachusetts 02325USA Institut des Sciences Analytiques et de Physico-Chimie pour l’Environnement et les Matériaux CNRSUniversite de Pau et des Pays de l’Adour64053 Pau CedexFrance Laboratoire Charles Fabry Institut d’Optique Graduate SchoolCNRSUniversitéParis-Saclay91127 Palaiseau CedexFrance LP2N Institut d’Optique Graduate SchoolCNRSUniv.Bordeaux33400 TalenceFrance

Nonlinear all-optical technology is an ultimate route for the next-generation ultrafast signal processing of optical communication *** nonlinear functionalities need to be implemented in photonics,and complex oxides are considered as promising candidates due to their wide panel of *** this context,yttria-stabilized zirconia(YSZ)stands out,thanks to its ability to be epitaxially grown on silicon,adapting the lattice for the crystalline oxide family of *** report,for the first time to the best of our knowledge,a detailed theoretical and experimental study about the third-order nonlinear susceptibility in crystalline *** self-phase modulation-induced broadening and considering the in-plane orientation of YSZ,we experimentally obtained an effective Kerr coefficient of n2YSZ=4.0±2×10^-19 m^2·W^-1 in an 8%(mole fraction)YSZ *** agreement with the theoretically predicted n2YSZ=1.3×10^-19 m^2·W^-1,the third-order nonlinear coefficient of YSZ is comparable with the one of silicon nitride,which is already being used in nonlinear *** promising results are a new step toward the implementation of functional oxides for nonlinear optical applications.

关键词： materials. nonlinear crystalline