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Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress

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Chinese Physics B 2022年第12期31卷 599-604页

作者： dongli zhang Mingxiang Wang Huaisheng Wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is *** show that conventional NBS degradation with negative shift of the transfer curves is *** on-state current is decreased,but the subthreshold characteristics are not *** gate bias dependence of the drain leakage current at V_(ds)of 5.0 V is suppressed,whereas the drain leakage current at V_(ds)of 0.1 V exhibits obvious gate bias *** confirmed via TCAD simulation,the corresponding mechanisms are proposed to be trap state generation in the GB region,positive-charge local formation in the gate oxide near the source and drain,and trap state introduction in the gate oxide.

关键词： negative bias stress poly-Si thin-film transistor grain boundary

Newmark displacement model for landslides induced by the 2013 Ms 7.0 Lushan earthquake, China

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Frontiers of Earth Science 2016年第4期10卷 740-750页

作者： Renmao YUAN Qinghai DENG Dickson CUNNINGHAM Zhujun HAN dongli zhang Bingliang zhang Key Laboratory of Active Tectonics and Volcano Institute of Geology China Earthquake Administration Beijing 100029 China College of Earth Science and Engineering Shandong University of Science and Technology Qingdao 266590 China Department of Environmental Earth Science Eastern Connecticut State University Connecticut 06226 USA

Predicting approximate earthquake-induced landslide displacements is helpful for assessing earthquake hazards and designing slopes to withstand future earth- quake shaking. In this work, the basic methodology outlined by Jibson （1993） is applied to derive the Newmark displacement of landslides based on strong ground-motion recordings during the 2013 Lushan Ms 7.0 earthquake. By analyzing the relationships between Arias intensity, New- mark displacement, and critical acceleration of the Lushan earthquake, formulas of the Jibson93 and its modified models are shown to be applicable to the Lushan earthquake dataset. Different empirical equations with new fitting coefficients for estimating Newmark displace- ment are then developed for comparative analysis. The results indicate that a modified model has a better goodness of fit and a smaller estimation error for the Jibson93 formula. It indicates that the modified model may be more reasonable for the dataset of the Lushan earthquake. The analysis of results also suggests that a global equation is not ideally suited to directly estimate the Newmark displacements of landslides induced by one specific earthquake. Rather it is empirically better to perform a new multivariate regression analysis to derive new coefficients for the global equation using the dataset of the specific earthquake. The results presented in this paper can be applied to a future co-seismic landslide hazard assessment to inform reconstruction efforts in the area affected by the 2013 Lushan Ms 7.0 earthquake, and for future disaster prevention and mitigation.

关键词： Newmark displacement of landslide Ariasintensity critical acceleration empirical relationship theLushan Ms 7.0 earthquake

Experimental research on air film formation behavior of air cushion belt conveyor with stable load

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Science China(Technological Sciences) 2013年第6期56卷 1424-1434页

作者： GUO Sheng LIU Jian LI ZhiRen zhang dongli HUANG Wei School of Mechanical Electronic and Control EngineeringBeijing Jiaotong University

In this paper, the air film formation behavior of air cushion belt conveyor with stable load is studied. The air cushion field is analyzed by means of theoretical derivation, numerical simulation and experimental research. An intelligent experiment platform is developed. Three dimensional pressure distribution of air film and the air film thickness distribution along the conveyor belt in the width direction are obtained. The experimental result is analyzed by comparing with theoretical calculation and numerical simulation. The numerical and theoretical results are in good agreement with those obtained from experiments. The air film formation behavior pattern of air cushion belt conveyor with stable load is presented. The optimized film thickness and pore distribution are obtained based on the comprehensive energy consumption. This study provides a basis for the optimization design of air cushion belt conveyor.

关键词： air cushion belt conveyor stable load air film formation behaviour energy consumption analysis

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

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Chinese Physics B 2021年第11期30卷 610-617页

作者： Jianing Guo dongli zhang Mingxiang Wang Huaisheng Wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress(NBS)is observed for amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs),which can recover in a short *** comparing with the degradation phenomena under negative bias illumination stress(NBIS),positive bias stress(PBS),and positive bias illumination stress(PBIS),degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies(V_(o)^(+))in addition to the commonly reported doubly charged oxygen vacancies(V_(o)^(2+)).Furthermore,the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of V_(o)^(+)under positive gate *** proposed degradation mechanisms are verified by TCAD simulation.

关键词： amorphous IGZO thin-film transistors negative bias stress subthreshold swing

The effect of altimetry data in estimating the elastic thickness of the lithosphere in the western Pacific Ocean

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Geodesy and Geodynamics 2021年第5期12卷 315-322页

作者： Zheng Gong Peizhen zhang Wenjun Zheng dongli zhang Binbin Xu Guangdong Provincial Key Laboratory of Geodynamics and Geohazards School of Earth Sciences and EngineeringSun Yat-Sen UniversityGuangzhou510275China Southern Marine Science and Engineering Guangdong Laboratory(Zhuhai) Zhuhai519082China

The elastic thickness of the lithosphere(Te)is a key parameter used to describe the strength of the *** is usually estimated by a spectral analysis between gravity and *** previous research on the estimation of Te,altimetry data were used on both the gravity data and topography data,which could lead to *** study described in this paper analyzed the effects of using gravity anomalies derived from different data sources on the estimation of Te,Taking the western Pacific region as an example,this study analyzed the impact of the repeated presence of altimetry satellite data on the calculation of the effective elastic thickness and found that if gravity anomalies and topography model both contain altimetry satellite data,they systematically overestimate effective *** a uniform area,the difference in Te can reach up to 30%.For a Te distribution,the difference can reach up to about16%.After eliminating this effect,the effective elastic thickness of the western Pacific region was found to be 10 km,and the statistical results of the effective elastic thickness distribution showed that the effective elastic thickness of the lithosphere in most areas of the western Pacific is about 12 *** paper shows the importance of choosing the appropriate gravity model in evaluating the elastic thickness of lithosphere in the oceans.A figure of Te at seamounts with loading ages demonstrates that Te in the western Pacific is generally distributed within the 100-300℃isotherm depth and does not increase with loading age.

关键词： The elastic thickness of lithosphere The western Pacific Ocean Altimetry data Spectral analysis

Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

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Chinese Physics B 2022年第8期31卷 651-655页

作者： Tianyuan Song dongli zhang Mingxiang Wang Qi Shan School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China Visionox Technology Co. LtdSuzhou 215006China

Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated,and the corresponding degradation mechanism is proposed and *** maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same *** of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying *** observed degradation phenomena,including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale,current crowding in the output curve,and smaller degradation in transfer curves measured under large drain bias,can all be well explained with the proposed degradation mechanism.

关键词： a-IGZO thin-film transistors hot-carrier effects

A systematic study of light dependency of persistentphotoconductivity in a-InGaZnO thin-film transistors

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Chinese Physics B 2020年第11期29卷 508-515页

作者： Yalan Wang Mingxiang Wang dongli zhang Huaisheng Wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically *** of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing *** of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally ***,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable *** low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is *** increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher *** on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.

关键词： amorphous indium-gallium-zinc oxide thin-film transistors persistent photoconductivity lightintensity

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

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Chinese Physics B 2017年第1期26卷 353-356页

作者： dongli zhang Mingxiang Wang Man Wong Hoi-Sing Kwok Department of Microelectronics Soochow University Suzhou 215006 China Center for Display Research Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Kowloon Hong Kong China

Crystallization of amorphous silicon（a-Si） which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization（MIC） polycrystalline silicon（poly-Si） regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10^-9cm^2/s at 550℃ is estimated for the trace nickel diffusion in a-Si.

关键词： metal-induced crystallization poly-Si nickel diffusion coefficient

Late Quaternary Slip Behavior of the Jinqianghe Fault in the Middle Qilian-Haiyuan Fault Zone,Northeastern Tibetan Plateau

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Acta Geologica Sinica(English Edition) 2022年第3期96卷 825-843页

作者： LIANG Shumin ZHENG Wenjun CHEN Gan zhang Peizhen zhang dongli BI Haiyun YANG Xue zhang Yipeng DUAN Lei LU Bentian Guangdong Provincial Key Laboratory of Geodynamics and Geohazards School of Earth Sciences and EngineeringSun Yat–sen UniversityGuangzhou 510275China Southern Marine Science and Engineering Guangdong Laboratory(Zhuhai) ZhuhaiGuangdong 519082China State Key Laboratory for Earthquake Dynamics Institute of GeologyChina Earthquake AdministrationBeijing 100029China

The Qilian-Haiyuan fault zone in the northeastern Tibetan Plateau has been the source of strong earthquakes in the *** its middle segment,the Jinqianghe fault is an important active fault within the Tianzhu seismic gap;however,little is known about its slip *** present a new horizontal displacement distribution along this fault,we used WorldView-2 stereo pairs and unmanned aerial vehicle-based photogrammetry to construct digital elevation models to obtain a detailed tectono-geomorphic interpretation and geomorphic *** offset marker measurements yielded 135 geomorphic displacements and 8 offset *** dating was used to establish the regional age sequence of the geomorphic units in offset fluvial terraces at four study *** displacements and ages linked the offset clusters with the geomorphic unit sequence;the Holocene strike-slip rate of the Jinqianghe fault was estimated to 4.8-5.6 mm/a at~4-12 ka and 2.9-4.7 mm/a from~4 *** recent earthquakes(with a recurrence interval of~1000 years)represent an active seismic period,revealing the potential seismic hazard along this fault because it has not ruptured in the last 1500 years.

关键词： remote sensing offset geomorphology cumulative offset distribution Qilian-Haiyuan fault zone