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Upcycling plastic wastes into value-added products via electrocatalysis and photoelectrocatalysis

Journal of Energy Chemistry 2024年第4期91卷 522-541页

作者： Sungsoon Kim dongjae kong Xiaolin Zheng Jong Hyeok Park Department of Chemical&Biomolecular Engineering Yonsei UniversitySeoul 03722Republic of Korea Department of Mechanical Engineering Stanford UniversityStanfordCA 94305USA

Plastic,renowned for its versatility,durability,and cost-effectiveness,is indispensable in modern ***,the annual production of nearly 400 million tons of plastic,coupled with a recycling rate of only 9%,has led to a monumental environmental *** recycling has emerged as a vital response to this crisis,offering sustainable solutions to mitigate its environmental *** these recycling efforts,plastic upcycling has garnered attention,which elevates discarded plastics into higher-value ***,electrocatalytic and photoelectrocatalytic treatments stand at the forefront of advanced plastic *** or photoelectrocatalytic treatments involve chemical reactions that facilitate electron transfer through the electrode/electrolyte interface,driven by electrical or solar energy,*** methods enable precise control of chemical reactions,harnessing potential,current density,or light to yield valuable chemical *** review explores recent progress in plastic upcycling through electrocatalytic and photoelectrocatalytic pathways,offering promising solutions to the plastic waste crisis and advancing sustainability in the plastics industry.

关键词： Plastic upcycling Electrocatalytic reaction Photoelectrocatalytic reaction Value-added product

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Bulk-Si photonics technology for DRAM interface[Invited]

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Photonics Research 2014年第3期2卷 S0025-S0033页

作者： Hyunil Byun Jinkwon Bok Kwansik Cho Keunyeong Cho Hanmei Choi Jinyong Choi Sanghun Choi Sangdeuk Han Seokyong Hong Seokhun Hyun TJJeong Ho-Chul Ji In-Sung Joe Beomseok Kim Donghyun Kim Junghye Kim Jeong-Kyoum Kim Kiho Kim Seong-Gu Kim Duanhua kong Bongjin Kuh Hyuckjoon Kwon Beomsuk Lee Hocheol Lee Kwanghyun Lee Shinyoung Lee Kyoungwon Na Jeongsik Nam Amir Nejadmalayeri Yongsang Park Sunil Parmar Junghyung Pyo dongjae Shin Joonghan Shin Yong-hwack Shin Sung-Dong Suh Honggoo Yoon Yoondong Park Junghwan Choi Kyoung-Ho Ha Gitae Jeong Samsung Electronics 1 SamsungjeonjaroHwasungshiGyoung-gido445-330South Korea

We present photonics technology based on a bulk-Si substrate for cost-sensitive dynamic random-access memory(DRAM)optical interface *** summarize the progress on passive and active photonic devices using a local-crystallized Si waveguide fabricated by solid phase epitaxy or laser-induced epitaxial growth on bulk-Si *** process of integration of a photonic integrated circuit(IC)with an electronic IC is demonstrated using a 65 nm DRAM periphery process on 300 mm wafers to prove the possibility of seamless integration with various complementary metal-oxide-semiconductor *** the bulk-Si photonic devices,we show the feasibility of high-speed multidrop interface:the Mach–Zehnder interferometer modulators and commercial photodetectors are used to demonstrate four-drop link operation at 10 Gb∕s,and the transceiver chips with photonic die and electronic die work for the DDR3 DRAM interface at 1.6 Gb∕s under a 1∶4 multidrop configuration.

关键词： interferometer waveguide interface

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