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Influence of process parameters on band gap of AI-doped ZnO film

Frontiers of Optoelectronics 2013年第1期6卷 114-121页

作者： diqiu huang xiangbin zeng yajuan zheng xiaojin wang yanyan yang School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

This paper presents the influence of process parameters, such as argon (Ar) flow rate, sputtering power and substrate temperature on the band gap of Al-doped ZnO film, Al-doped ZnO thin films were fabricated by radio frequency (RF) magnetron sputtering technology and deposited on polyimide and glass substrates. Under different Ar flow rates varied from 30 to 70 sccm, the band gap of thin films were changed from 3.56 to 3.67 eV. As sputtering power ranged from 125 to 200W, the band gap was varied from 3.28 to 3.82 eV; the band gap was between 3.41 and 3.88 eV as substrate temperature increases from 150°C to 300°C. Furthermore, the correlation between carrier concentration and band gap was investigated by HALL. These results demonstrate that the band gap of the Al-doped ZnO thin film can be adjusted by changing the Ar flow rate, sputtering power and substrate temperature, which can improve the performance of semiconductor devices related to Al-doped ZnO thin film.

关键词： Al-doped ZnO thin films band gap carrier concentration argon (Ar) flow rate sputtering power substrate temperature

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Influence of substrate temperature on in situ-textured ZnO thin films grown by MOCVD

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Frontiers of Optoelectronics 2013年第3期6卷 270-274页

作者： yajuan zheng xiangbin zeng Xiaohu SUN diqiu huang School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

The influence of substrate temperature on microstructure, electrical and optical properties of in situ- textured zinc oxide （ZnO） films fabricated by metal organic chemical vapor deposition （MOVCD） had been investigated. Results indicated that the substrate tempera- ture played a very important role on preparation of ZnO thin film. With the raising of temperature, firstly ZnO crystals were perpendicular to the substrate, then they were grown inclining toward the substrate, finally ZnO crystals grown in layers but not regular. Consequently, ZnO film surface morphology changed from smooth to a pyramid structure and then disappeared little by little. Moreover, it was also found in this study that ZnO film was characterized with high crystallinity, low resistivity （2.17 x 10 2） and high transmittance （〉 80%）. These results suggested that ZnO thin film is suitable for front electrode of silicon thin film solar cell.

关键词： metal organic chemical vapor deposition(MOVCD) in situ-textured zinc oxide (ZnO) thin film,temperature

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