检索结果-南通市图书馆

Low swing drivers based on charge redistribution

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2010年第11期53卷 2377-2388页

作者： WU FengFeng, JIA Song, WANG Yuan & ZHANG GangGang Key Laboratory of microelectronics Devices and Circuits (MOE), department of microelectronics, Peking University, Beijing 100871, China Key Laboratory of microelectronics Devices and Circuits (MOE) Department of Microelectronics Peking University Beijing China

Low power on-chip interconnect technique is important for deep submicron SOC design. In this paper, a novel low swing drivers scheme based on charge redistribution is proposed. Significant reduction in power dissipation is achieved by dividing the full signal swing into several lower ones. The proposed circuits are especially suitable for driving multi-branch transmission wires by utilizing higher efficiency of charges. Compared with the reference design, the new scheme can reduce power dissipation by more than 66% as shown by HSPICE simulation while driving three branches. The proposed circuits have been fabricated and its effectiveness has been verified by measurement results.

关键词： low swing charge redistribution low power design

Design of novel,semi-transparent flip-flops (STFF) for high speed and low power application

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2012年第10期55卷 2390-2398页

作者： LI XiaYu ,JIA Song,LIU LiMin,WANG Yuan & ZHANG GangGang Key Laboratory of microelectronics Devices and Circuits(MOE),department of microelectronics,Peking University,Beijing 100871,China Key Laboratory of microelectronics Devices and Circuits (MOE) Department of Microelectronics Peking University Beijing China

This paper presents a novel,semi-transparent structure to implement single-edge and dual-edge triggered *** two novel flip-flops can achieve high speed and low power due to their short data paths and fewer redundant *** results show that the proposed semi-transparent flip-flop and dual-edge triggered semi-transparent flip-flop perform best compared with conventional *** reduces the power-delay-product 33.1% compared with Antonio’s sense amplifier based *** improves the PDP 9.1% and 47.8% as compared with dual-edge triggered sense amplifier based flip-flop and high speed dual-edge triggered modified hybrid latch flip-flop respectively.

关键词： flip-flop semi-transparent high speed low power

Novel Multimode Interference Optical Filters in GeSi/Si for λ=1.3μm and 1.55μm

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Semiconductor Photonics and Technology 1997年第3期3卷 163-168页

作者： LI Baojun,LI Guozheng,LIU Enke(department of microelectronics Engineering,Xi’an Jiaotong University,Xi’an 710049,CHN)

: A novel 1.3/1.55 μm optical filter in GeSi/Si was designed based on multimode *** the modal propagation analysis,transmission characteristics of the filter were investigated.Keywords: Filter,Multimode Interfere... 详细信息

关键词：多模干涉光学过滤器光波导硅化锗

维普期刊数据库

Electron Mobility of Doped Strained Si_(1-x)Ge_x Alloys Grown on Si(100) Substrate

在线全文

学校读者我要写书评

暂无评论

Semiconductor Photonics and Technology 1997年第3期3卷 212-217页

作者： LI Baojun,LI Guozheng,LIU Enke(department of microelectronics Engineering,Xi’an Jiaotong University,Xi’an 710049,CHN)

: The electron mobility for strained Si1-xGex alloy layer grown on Si(100) substrate has been calculated for doping range of 1017 cm-3 to 1020 cm-3 with Ge contents of 0.0≤x≤*** results show a decrease in the mobility with increasing of Ge content and doping *** electron mobility in-plane is found to be smaller than the perpendicular component.Keywords: Doping Profiles,Electron Mobility,Semiconductor Materials,Silicon,Strained Alloys

关键词：电子迁移半导体硅应变合金

Electron Mobility of Doped Strained Si1-xGex Alloys Grown on Si（100） Substrate

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Semiconductor Photonics and Technology 1997年第3期 52-57页

作者：  LI Baojun,LI Guozheng,LIU Enke (department of microelectronics Engineering,Xi'an Jiaotong University,Xi'an 7100 49,CHN)

ＥｌｅｃｔｒｏｎＭｏｂｉｌｉｔｙｏｆＤｏｐｅｄＳｔｒａｉｎｅｄＳｉ１－ｘＧｅｘＡｌｏｙｓＧｒｏｗｎｏｎＳｉ（１００）Ｓｕｂｓｔｒａｔｅ①②ＬＩＢａｏｊｕｎ，ＬＩＧｕｏｚｈｅｎｇ，ＬＩＵＥｎｋｅ（Ｄｅｐａｒｔｍｅｎｔｏ... 详细信息

ＥｌｅｃｔｒｏｎＭｏｂｉｌｉｔｙｏｆＤｏｐｅｄＳｔｒａｉｎｅｄＳｉ１－ｘＧｅｘＡｌｏｙｓＧｒｏｗｎｏｎＳｉ（１００）Ｓｕｂｓｔｒａｔｅ①②ＬＩＢａｏｊｕｎ，ＬＩＧｕｏｚｈｅｎｇ，ＬＩＵＥｎｋｅ（ＤｅｐａｒｔｍｅｎｔｏｆＭｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ...

关键词： x)Ge_x Alloys Grown on Si Ge Substrate

A low power and small area all digital delay-locked loop based on ring oscillator architecture

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2012年第2期55卷 453-460页

作者： ZHENG JiaPeng1,LI Wei2,LU XueQing2,CHENG YuHua1 & WANG YangYuan1 1department of microelectronics,School of Electronics Engineering and Computer Science,Peking University,Beijing 100871,China 2Semiconductor Manufacturing International Corp,Shanghai 201203,China department of microelectronics School of Electronics Engineering and Computer Science Peking University Beijing China Semiconductor Manufacturing International Corp Shanghai China

A 133-500 MHz,5.2 mW @500 MHz,0.021 mm2 all digital delay-locked loop(ADDLL)is *** power and area reduction of the proposed ADDLL are achieved by implementing a high frequency ring oscillator(ROSC)to count the reference clocks such that the one-clock cycle delay chain and the phase detector in a conventional Master block are no longer *** proposed ADDLL has better immunity to PVT(process,voltage,and temperature)than most conventional DLLs,which do not update the control word signals after the locking process,since the control signals for slave delay line are updated in every 256 reference *** in 0.13 um CMOS process,the measured RMS jitter is 10.83 ps at 500 MHz while the RMS jitter of the input signal is 9.97 ps.

关键词： all digital delay locked loop(DLL) phase locked loop(PLL) ring oscillator

Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Progress in Natural Science:Materials International 2010年第1期20卷 70-75页

作者： Yi-jung LIU~1,Chien-chang HUANG~1,Tai-you CHEN~1,Chi-shiang HSU~1,Shiou-ying CHENG~2, Kun-wei LIN~3,Jian-kai LIOU~1,Wen-chau LIU~1 1.Institute of microelectronics,department of Electrical Engineering,National Cheng-Kung University, Tainan 70101,Taiwan,China 2.department of Electronic Engineering,Nation Ilan University,I-Lan 26041,Taiwan,China 3.department and Graduate Institute of Computer Science and Information Engineering, Chaoyang University of Technology,Taichung 41349,Taiwan,China Institute of microelectronics Department of Electrical Engineering National Cheng-Kung University Tainan 70101 Taiwan China department of Electronic Engineering Nation Ilan University I-Lan 26041 Taiwan China department and Graduate Institute of Computer Science and Information Engineering Chaoyang University of Technology Taichung 41349 Taiwan China

An InGaN/GaN multiple-quantum-well（MQW）light-emitting diode（LED）with a ten-period i（undoped）-InGaN/p（Mg doped）-GaN（2.5 nm/5.0 nm）superlattice（SL）structure,was *** SL structure that can be regarded as a confinement layer of holes to enhance the hole injection efficiency is inserted between MQW and p-GaN *** studied LED device exhibits better current spreading performance and an improved quality,compared with a conventional one without SL *** to the reduced contact resistance as well as more uniformity of carriers injection,the operation voltage at 20 mA is decreased from 3.32 to 3.14 V.A remarkably reduced reverse-biased leakage current(10-7-10-9A)and higher endurance of the reverse current pulse are *** measured output power and external quantum efficiency（EQE）of the studied LED are 13.6 mW and 24.8%,respectively. In addition,significant enhancement of 25.4%in output power as well as increment of 5%in EQE for the studied devices is observed, as the studied devices show superior current spreading ability and reduction in dislocations offered by the SL structure.

关键词： GaN superlattice(SL) current spreading hole confinement electrostatic discharge(ESD)

Silicon Optical Modulators Fabricated on Silicon Substrate Based on the p-i-n Waveguide Structure

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Silicon Optical Modulators Fabricated on Silicon Substrate B...

THE DESIGN OF HIGH PERFORMANCE LINEAR TRANSCONDUCTOR

The Eighth Chinese Optoelectronics Symposium

作者： R. W. Chuang Institute of microelectronics, department of Electrical Engineering, and Advanced Optoelectronic Technology Center (AOTC), National Cheng Kung University, Tainan City 70101

INTRODUCTION Silicon has already been demonstrated as a viable material for passive and active optoelectronic device applications in the infrared regime (λ > 1.2 μm) of the electromagnetic spectrum. Over these years, silicon’s role in integrated optics has been successfully transformed from substrate material to guiding material. In fact, a lot of works in the past have shown that the silicon planar and rib waveguides can be fabricated with low losses, and hence they can easily be adapted into the designs of many passive and active silicon-based devices. One structure

关键词：

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

Journal of Electronics(China) 2006年第1期23卷 107-108页

作者： Gao Qingyun Li Xuechu Qin Shicai department of microelectronics Science Nankai University Tianjin 300071 China

An improved structure of linear transconductor is presented in this paper. It is analyzed in theory and simulated with Spectre based on 0.25μm CMOS process. The simulation results show that the differential input voltage of the proposed transconductor is 4.0Vpp(peak to peak), whereas the differential input voltage of the existing source degeneration structure is 2.2Vpp, when their nonlinear errors are required to be less than 0.15%.

关键词： Design of CMOS circuit Transconductor Linearity

维普期刊数据库