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Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction

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Science China(Physics,Mechanics & Astronomy) 2022年第10期65卷 109-114页

作者： Yudong zhuo Wenlong Cai daoqian zhu Hongchao Zhang Ao Du Kaihua Cao Jialiang Yin Yan Huang Kewen Shi Weisheng Zhao Fert Beijing Institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266000China

The current-induced spin-orbit torque(SOT) is one of the most promising ways for high speed and low power spintronics devices. However, the mechanism of SOT driven magnetization reversal, especially the role of the field-like torque(FLT), is still unclear. Here, we report the observed promotion and suppression of switching by FLT, which depends on the relative direction of FLT and spin polarization. Our results reveal that the FLT could modulate the switching speed and power consumption by affecting the work done by the damping-like torque, and leads two different reversal dynamical paths during the ***, the origin of incubation time in SOT induced switching is clarified simultaneously.

关键词： spin-orbit torque field-like torque magnetization reversal magnetic tunnel junction

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Tunneling magnetoresistance materials and devices for neuromorphic computing

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Materials Futures

Materials Futures 2023年第3期2卷 90-113页

作者： Yuxuan Yao Houyi Cheng Boyu Zhang Jialiang Yin daoqian zhu Wenlong Cai Sai Li Weisheng Zhao Fert Beijing Institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191People’s Republic of China Hefei Innovation Research Institute Anhui High Reliability Chips Engineering LaboratoryBeihang UniversityHefei 230013People’s Republic of China Truth Equipment Corporation TRECHefei 230013People’s Republic of China Beihang-Geortek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266061People’s Republic of China

Artificial intelligence has become indispensable in modern life,but its energy consumption has become a significant concern due to its huge storage and computational *** intelligence algorithms are mainly based on deep learning algorithms,relying on the backpropagation of convolutional neural networks or binary neural *** these algorithms aim to simulate the learning process of the human brain,their low bio-fidelity and the separation of storage and computing units lead to significant energy *** human brain is a remarkable computing machine with extraordinary capabilities for recognizing and processing complex information while consuming very low *** magnetoresistance(TMR)-based devices,namely magnetic tunnel junctions(MTJs),have great advantages in simulating the behavior of biological synapses and *** is not only because MTJs can simulate biological behavior such as spike-timing dependence plasticity and leaky integrate-fire,but also because MTJs have intrinsic stochastic and oscillatory *** characteristics improve MTJs’bio-fidelity and reduce their power *** also possess advantages such as ultrafast dynamics and non-volatile properties,making them widely utilized in the field of neuromorphic computing in recent *** conducted a comprehensive review of the development history and underlying principles of TMR,including a detailed introduction to the material and magnetic properties of MTJs and their temperature *** also explored various writing methods of MTJs and their potential ***,we provided a thorough analysis of the characteristics and potential applications of different types of MTJs for neuromorphic ***-based devices have demonstrated promising potential for broad application in neuromorphic computing,particularly in the development of spiking neural *** ability to perform on-chip learning with ultra-low power consumpt

关键词： spintronics TMR MTJ neuromorphic computing SNN

Observation of magnetic droplets in magnetic tunnel junctions

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Science China(Physics,Mechanics & Astronomy) 2022年第2期65卷 99-105页

作者： Kewen Shi Wenlong Cai Sheng Jiang daoqian zhu Kaihua Cao Zongxia Guo Jiaqi Wei Ao Du Zhi Li Yan Huang Jialiang Yin Johan Akerman Weisheng Zhao Fert Beijing Institute M1IT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266000China Department of Physics University of GothenburgGothenburg 41296Sweden Department of Applied Physics School of Engineering Sciences.KTH Royal Institute of TechnologyKista 16440Sweden School of Microelectronics Northwestern Poly technical UniversityXi'an 710072China

Magnetic droplets,a class of highly nonlinear magnetodynamic solitons,can be nucleated and stabilized in nanocontact spintorque *** we experimentally demonstrate magnetic droplets in magnetic tunnel junctions(MTJs).The droplet nucleation is accompanied by power enhancement compared with its ferromagnetic resonance *** nucleation and stabilization of droplets are ascribed to the double-Co Fe B free-layer structure in the all-perpendicular MTJ,which provides a low Zhang-Li torque and a high pinning *** results enable better electrical sensitivity in fundamental studies of droplets and show that the droplets can be utilized in MTJ-based applications and materials science.

关键词： spin-torque nano-oscillators magnetic droplets spin dynamics magnetic tunnel junctions

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Antiferromagnetic spintronics: An overview and outlook

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Fundamental Research 2022年第4期2卷 522-534页

作者： Danrong Xionga Yuhao Jiang Kewen Shi Ao Du Yuxuan Yao Zongxia Guo daoqian zhu Kaihua Cao Shouzhong Peng Wenlong Cai Dapeng zhu Weisheng Zhao Fert Bejing Institute MIT Key Laboratory of SpintronicsSchool of Integated Circuit Science and EngineeringBeihang UniversityBejing 10191China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266ooChina

Over the pas few decades,the diversified development of antiferomagnetic spintronics has made antiferomagnets(AFMs)interesting and very *** tough challenges,the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of *** AFMs are internally magnetic,taking full use of AFMs for information storage has been the main target of *** this paper,we provide a comprehensive description of AFM spintronics applications from the interface coupling,read-out operations,and writing manipulations *** examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory(MRAM),and review the latest mechanisms of the manipulation and detection of ***,based on exchange bias(EB)manipulation,a high-performance EB-MRAM is introduced as the next generation of AFM-based memories,which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.

关键词： Antiferromagnets MRAM Spintronics Spin-orbit torque Exchange bias

Perpendicular magnetization switching by large spin-orbit torques from sputtered Bi2Te3

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Chinese Physics B 2020年第7期29卷 215-220页

作者： Zhenyi Zheng Yue Zhang daoqian zhu Kun Zhang Xueqiang Feng Yu He Lei Chen Zhizhong Zhang Dijun Liu Youguang Zhang Pedram Khalili Amiri Weisheng Zhao Fert Beijing Research Institute BDBCSchool of MicroelectronicsBeihang UniversityBeijing 100191China School of Electronics and Information Engineering Beihang UniversityBeijing 100191China Department of Electrical and Computer Engineering Northwestern UniversityEvanstonIllinois 60208USA

Spin-orbit torque(SOT)effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic ***,topological insulators(TIs)have gained extensive attention,as they are demonstrated to maintain a large effective spin Hall angle(θeff SH),even at room ***,molecular beam epitaxy(MBE),as a precise deposition method,is required to guarantee favorable surface states of TIs,which hinders the prospect of TIs towards industrial *** this paper,we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic *** harmonic Hall measurement,a high SOT efficiency(8.7±0.9 Oe/(10^9 A/m^2))and a largeθ^eff SH(3.3±0.3)are obtained at room ***,we also observe an ultra-low critical switching current density(9.7×10^9 A/m^2).Moreover,the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT *** work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.

关键词： spin-orbit torque sputtered topological insulator ferrimagnet magnetization switching

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台锥形柱尾的填充毛细管液相色谱柱

分析化学 2000年第10期28卷 1204-1208页

作者：朱翠茹关亚风王涵文朱道乾中国科学院大连化学物理研究所!大连116012

首次将台锥形柱尾用于填充毛细管液相色谱柱，并与环氧胶粘的柱尾连接方式进行比较，发现在柱内径≥０．３２ｍｍ时，前者的柱效比后者高出３０％～５０％，且明显改善柱效－流速特性。对比研究了不同内径柱（０．５３ｍｍ，０．３... 详细信息

首次将台锥形柱尾用于填充毛细管液相色谱柱，并与环氧胶粘的柱尾连接方式进行比较，发现在柱内径≥０．３２ｍｍ时，前者的柱效比后者高出３０％～５０％，且明显改善柱效－流速特性。对比研究了不同内径柱（０．５３ｍｍ，０．３２ｍｍ，０．２５ｍｍ）采用两种尾接方式的塔板高度与流速的关系，对产生差异的原因进行了探讨

关键词：台锥形柱尾梯度柱径区带展宽填充毛细管液相色谱柱

Orbitronics for energy-efficient magnetization switching

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Science China(Information Sciences) 2024年

作者： Yuxuan YAO daoqian zhu Qingtao XIA Jianing LIANG Yuhao JIANG Zhiyang PENG Jiaxu LI Chen XIAO Renyou XU Wenwen WANG Xiantao SHANG Shiyang LU Dapeng zhu Hongxi LIU Kaihua CAO Weisheng ZHAO Fert Beijing Institute School of Integrated Circuit Science and Engineering Beihang University National Key Lab of Spintronics Institute of International Innovation Beihang University Qingdao Research Institute Beihang University Truth Memory Corporation

Spin-orbit torque (SOT), as a promising writing method for magnetic random-access memory (MRAM), has garnered widespread interest for over a decade [1]. Heavy metals,such as β-W, have been broadly adopted as spin current sources, but suffer from phase change at a limited thickness, resulting in a dramatic reduction of the charge-tospin conversion efficiency θSH [2]. The thickness limitation leads to stringent etching conditions and large distribution among devices, posing challenges for simultaneously satisfying SOT efficiency, etching-stop margins, and back-end-ofline (BEOL) compatibility.

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低碳烃的常温动态预浓缩方法

分析化学 2000年第12期28卷 1558-1562页

作者：苗虹关亚风王涵文朱道乾中国科学院大连化学物理研究所!大连116012

设计了一种常温动态预浓缩方法，用于低沸点气体样品的富集。该方法使用对样品有中等保留强度的吸附剂作为浓缩柱，配以反吹和快速升温技术，实现了对沸点≥－１０３℃样品的常温动态富集和升温快速脱附。整个过程不间断连续完成，从进... 详细信息

设计了一种常温动态预浓缩方法，用于低沸点气体样品的富集。该方法使用对样品有中等保留强度的吸附剂作为浓缩柱，配以反吹和快速升温技术，实现了对沸点≥－１０３℃样品的常温动态富集和升温快速脱附。整个过程不间断连续完成，从进样至脱附只需几分钟，能以较小的进样量获得较高的浓缩倍数。本文以Ｃ２样品为例进行了实验，在进样量１１ｍＬ时，得到浓缩倍数≥１００，回收率＞９８％，重复误差≤３％（ＲＳＤ）。该装置适配微型色谱仪，用于痕量分析。本方法同样适用于常规色谱仪。该方法操作简便、可靠性高，可用于环境样品和特殊场合的现场样品的富集和分析，替代了低温冷阱富集的传统方法。

关键词：常温动态预浓缩固体吸附热脱附微填充柱微型色谱仪

Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir_(20)Mn_(80)

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Chinese Physics B 2023年第5期32卷 648-654页

作者：熊丹荣蒋宇昊朱道乾杜奥郭宗夏卢世阳王春旭夏清涛朱大鹏赵巍胜 Fert Beijing Institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Hefei Innovation Research Institute Beihang UniversityHefei 230013China Beihang–Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266000China

Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral *** materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_*** the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical ***,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial *** ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of *** presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.

关键词： non-collinear antiferromagnets anomalous Hall effect magnetization switching spin–orbit torque