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检索条件"作者=Daijiro Nozaki"
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Silicon-Based Molecular Switch Junctions
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Nano Research 2009年 第8期2卷 648-659页
作者: daijiro nozaki Gianaurelio Cuniberti Institute for Material Science and Max Bergmann Center of Biomaterials Dresden University of TechnologyD-01062 DresdenGermany
In contrast to the static operations of conventional semiconductor devices,the dynamic conformational freedom in molecular devices opens up the possibility of using individual molecules as new types of devices such as... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Ionic effects on the transport characteristics of nanowire-based FETs in a liquid environment
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Nano Research 2014年 第3期7卷 380-389页
作者: daijiro nozaki Jens Kunstmann Felix Zorgiebel Sebastian Pregl Larysa Baraban Walter M. Weber Thomas Mikolajick Gianaurelio Cuniberti Institute for Materials Science and Max Bergmann Center of Biomaterials TU Dresden 01062 Dresden Germany Department of Chemistry Columbia University 3000 Broadeway New York NY 10027 USA NaMlab gGmbH N6thinger Str. 64 01187 Dresden Center forAdvancing Electronics Dresden (cfAED) TU Dresden 01062 Dresden Germany Dresden Center for Computational Materials Science (DCCMS) TU Dresden 01062 Dresden Germany
For the development of ultra-sensitive electrical bio/chemical sensors based on nanowire field effect transistors (FETs), the influence of the ions in the solution on the electron transport has to be understood. For... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output
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Nano Research 2013年 第6期6卷 381-388页
作者: Sebastian Pregl Walter M. Weber daijiro nozaki Jens Kunstmann Larysa Baraban Joerg Opitz Thomas Mikolajick Gianaurelio Cuniberti Institute for Materials Science and Max Bergmann Center of Biomaterials TU Dresden Dresden 01062 Germany NaMLab GmbH Dresden 01187 Germany Fraunhofer Institute IZFP Dresden Dresden 01109 Germany Institute for Semiconductors and Microsystems Technology TU Dresden Dresden 01187 Germany Division of IT Convergence Engineering POSTECH Pohang Korea
We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论