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Nonreciprocal directional dichroism in multiferroics

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Science China(Physics,Mechanics & Astronomy) 2020年第10期63卷 47-61页

作者： Yang Shen Bing Yu WenYi Tong QingBiao Zhao chungang duan Key Laboratory of Polar Materials and Devices Ministry of EducationDepartment of Electronic ScienceEast China Normal UniversityShanghai 200062China Theoretical Materials Physics Universitéde LiègeLiège B-4000Belgium Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China

Nonreciprocal directional dichroism in multiferroics,namely magnetoelectric coupling in the dynamic regime,is endowed with rich physics and promising applications,which are entangled with fundamental physical components,such as spin,orbital,lattice,charge,and *** a linear nonreciprocal response behavior in the GHz-THz frequency range,represented by optical magnetoelectric effect and magnetochiral dichroism,occurs ubiquitously in material systems with the spontaneous breaking of space-time symmetry,and is subject to Onsager’s reciprocal theorem in the thermodynamic ***,these nonreciprocal responses are usually encoded by toroidization(chirality)and electromagnon(quasiparticle),thus establishing a comprehensive understanding of magnetoelectric coupling and irreversible ***,the basic mechanisms and emergent nonreciprocal directional dichroism in single-phase multiferroics are *** expect that the present review will stimulate diverse possibilities toward nonreciprocal directional dichroism within and beyond multiferroics.

关键词： nonreciprocal directional dichroism multiferroic materials optical magnetoelectric effect magnetochiral dichroism electromagnon

First-principles study on the alkali chalcogenide secondary compounds in Cu(In,Ga)Se_2 and Cu_2ZnSn(S,Se)_4 thin film solar cells

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Journal of Energy Chemistry 2018年第4期27卷 1140-1150页

作者： Xian Zhang Dan Han Shiyou Chen chungang duan Junhao Chu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Collaborative Innovation Center of Extreme Optics Shanxi University

The beneficial effect of the alkali metals such as Na and K on the Cu（***）Se2 （CIGS） and Cu2ZnSn（S,Se）4 （CZTSSe） solar cells has been extensively investigated in the past two decades, however, in most of the studies the alkali metals were treated as dopants. Several recent studies have showed that the alkali metals may not only act as dopants but also form secondary phases in the absorber layer or on the surfaces of the films. Using the first-principles calculations, we screened out the most probable secondary phases of Na and K in CIGS and CZTSSe, and studied their electronic structures and optical properties. We found that all these alkali chalcogenide compounds have larger band gaps and lower VBM levels than CIGS and CZTSSe, because the existence of strong p-d coupling in CIS and CZTS pushes the valence band maximum （VBM） level up and reduces the band-gaps, while there is no such p-d coupling in these alkali chalcogenides. This band alignment repels the photo-generated holes from the secondary phases and prevents the electron-hole recombination. Moreover, the study on the optical properties of the secondary phases showed that the absorption coefficients of these alkali chalcogenides are much lower than those of CIGS and CZTSSe in the energy range of 0-3.4eV, which means that the alkali chalcogenides may not influence the absorption of solar light. Since the alkali metal dopants can passivate the grain boundaries and increase the hole carrier concentration, and meanwhile their related secondary phases have innocuous effect on the optical absorption and band alignment, we can understand why the alkali metal dopants can improve the CIGS and CZTSSe solar cell performance.

关键词： Cu(In,Ga)Se2 and Cu2ZnSn(S,Se)4 Thin film solar cells First-principles calculations Secondary phases Alkali dopants

Retinomorphic hardware for in-sensor computing

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InfoMat 2023年第9期5卷 1-25页

作者： Guangdi Feng Xiaoxu Zhang Bobo Tian chungang duan Key Laboratory of Polar Materials and Devices(MOE) Ministry of EducationShanghai Center of Brain-inspired Intelligent Materials and DevicesDepartment of ElectronicsEast China Normal UniversityShanghaithe People's Republic of China Zhejiang Lab Hangzhouthe People's Republic of China Collaborative Innovation Center of Extreme Optics Shanxi UniversityShanxithe People's Republic of China

Rapid developments in the Internet of Things and Artificial Intelligence trigger higher requirements for image perception and learning of external environments through visual ***,limited by von Neumann's bottleneck,the physical separation of sense,memory,and processing units in a conventional personal computer-based vision system tend to consume a significant amount of energy,time latency,and additional hardware *** integrating computational tasks of multiple functionalities into the sensors themselves,the emerging bio-inspired neuromorphic visual systems provide an opportunity to overcome these *** high speed,ultralow power and strong adaptability,it is highly desirable to develop a neuromorphic vision system that is based on highly precise in-sensor computing devices,namely retinomorphic *** here present a timely review of retinomorphic devices for visual in-sensor *** begin with several types of physical mechanisms of photoelectric sensors that can be constructed for artificial *** potential applications of retinomorphic hardware are,thereafter,thoroughly *** also highlight the possible strategies to existing challenges and give a brief perspective of retinomorphic architecture for in-sensor computing.

关键词： ferroelectric in-sensor computing photogating retinomorphic device

Research progress on 2D ferroelectric and ferrovalley materials and their neuromorphic application

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Science China(Physics,Mechanics & Astronomy) 2023年第11期66卷 55-76页

作者： Yifan Tan Junding Zheng Xuezhong Niu Yifeng Zhao Ni Zhong Bobo Tian chungang duan Key Laboratory of Polar Materials and Devices Ministry of EducationShanghai Center of Brain-inspired Intelligent Materials and DevicesDepartment of ElectronicsEast China Normal UniversityShanghai200241China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan030006China

Two-dimensional(2D)ferroelectric and ferrovalley materials have recently received extensive attention due to their significant advantages for modern electronic devices,such as miniaturization,low-dissipation,non-volatility,and *** interestingly,the couplings between the ferroic orders in these materials have enriched the development of intelligent devices,especially in neuromorphic *** this paper,the research progress of 2D ferroelectric and ferrovalley materials is introduced and the coupling effects between them are also ***,we briefly introduce recent neuromorphic computing reports based on 2D ferroelectric materials and give perspectives on ferrovalley neuromorphic devices.

关键词： two-dimensional materials ferroelectric materials multiferroic coupling neuromorphic application

A new pathway towards all-electric spintronics:electric-field control of spin states through surface/interface effects

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Science China(Physics,Mechanics & Astronomy) 2013年第1期56卷 232-244页

作者： GONG ShiJing DING HangChen ZHU WanJiao duan chungang ZHU ZiQiang CHU JunHao Key Laboratory of Polar Materials and Devices Ministry of EducationEast China Normal University National Laboratory for Infrared Physics Chinese Academy of Sciences

Manipulation of spin states via purely electric means forms the research branch "all-electric spintronics".In this paper,we briefly review recent progress relating to the all-electric spintronics,including electric-field control of Rashba spin-orbit coupling,magnetic anisotropy,exchange bias,ferromagnetism,and other forms of magnetoelectric *** focus is given to surface/interface systems,including semiconductor(oxide) heterostructures,magnetic/nonmagnetic surfaces,semiconductor-metal interfaces,and other nanostructures,which can be good candidates for functional materials for spintronic.

关键词： Rashba magnetoelectric effect multiferroic surface interface

Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

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Photonics Research 2021年第5期9卷 714-721页

作者： JIN HONG HUIMIN WEN JIAJING HE JINGQUAN LIU YAPING DAN JENS W.TOMM FANGYU YUE JUNHAO CHU chungang duan Key Laboratory of Polar Materials and Devices Ministry of EducationEast China Normal UniversityShanghai 200241China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Laboratory Department of Micro/Nano ElectronicsUniversity of Michigan-Shanghai Jiao Tong University Joint InstituteShanghai Jiao Tong UniversityShanghai 200240China Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie 12489 BerlinGermany National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

Silicon-based light sources, including light-emitting diodes(LEDs) and laser diodes(LDs) for information transmission, are urgently needed for developing monolithic integrated silicon photonics. Silicon with erbium ions(Er^(3+)) doped by ion implantation is considered a promising approach, but it suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 μm from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of ~6 mA(~0.8 A∕cm^(2)). Time-resolved photoluminescence and photocurrent results have revealed the complex carrier transfer dynamics by relaxing electrons from the Si conduction band to the Er^(3+) ion. This picture differs from the frequently assumed energy transfer via electron–hole pair recombination of the silicon host. Moreover, the amplified emission from the LEDs is likely due to a quasi-continuous Er/O-related donor band created by the deep cooling technique. This work paves the way for fabricating superluminescent diodes or efficient LEDs at communication wavelengths based on rare-earth-doped silicon.

关键词： diodes pumped light

Associative learning of a three-terminal memristor network for digits recognition

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Science China(Information Sciences) 2023年第2期66卷 209-218页

作者： Yiming REN Bobo TIAN Mengge YAN Guangdi FENG Bin GAO Fangyu YUE Hui PENG Xiaodong TANG Qiuxiang ZHU Junhao CHU chungang duan Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Department of ElectronicsEast China Normal University Zhejiang Lab Institute of Microelectronics Beijing Innovation Center for Future Chips (ICFC) Tsinghua University Collaborative Innovation Center of Extreme Optics Shanxi University

Imitating the associative intelligence of the biological brain is attractive but is poorly achieved in hardware because the complex tunable connection in neural networks is difficult to reproduce. We develop a circuit composed of a three-terminal memristor network to reproduce the biological conditioning process artificially. The synaptic weight between co-firing neurons is strengthened simultaneously by generating a feedback signal from the integrate-and-fire neuron to the gate of the synaptic memristor. The network allows the multi-associative capacity of recalling more than one digit in one circuit. Both single and multi-associative learning for recalling digital images are achieved. Furthermore, all 10 digital images from “0” to “9” are successfully recalled in an associative network with such paralleling circuits. Assisted by this associative layer, a typical classification network effectively improves the recognition rate for fragmentary digital *** work sheds light on brain-inspired artificial associative memory and provides a strategy for applications,such as object recognition with partial features and similar scenes.

关键词： artificial intelligence associative learning memristor classification network

磁有序CoH_(2)SeO_(4)薄片中的室温铁电性

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Science China Materials 2024年第5期67卷 1654-1660页

作者：陈璐秋余冰沈阳刘逸飞王号南冯光迪朱秋香罗卫东刘俊明万建国赵庆彪田博博褚君浩段纯刚 Key Laboratory of Polar Materials and Devices(MOE) Shanghai Center of Brain-inspired Intelligent Materials and Devicesand Department of ElectronicsEast China Normal UniversityShanghai200241China Zhejiang Lab Hangzhou310000China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing UniversityNanjing210093China Key Laboratory of Artificial Structures and Quantum Control School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai200240China School of Chemistry and Environmental Engineering Wuhan Institute of TechnologyWuhan430205China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China Institute of Optoelectronics Fudan UniversityShanghai200433China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan030006China

本文通过第一性原理计算和实验表征证明了二维CoH_(2)SeO_(4)薄膜的磁有序和滑移铁电性.首先,实验结果证实了粉末CoH_(2)SeO_(4)样品的反铁磁序.同时,第一性原理计算表明单层CoH_(2)SeO_(4)具有反铁磁(AFM-I)基态(TN≈75 K),且预测了二... 详细信息

本文通过第一性原理计算和实验表征证明了二维CoH_(2)SeO_(4)薄膜的磁有序和滑移铁电性.首先,实验结果证实了粉末CoH_(2)SeO_(4)样品的反铁磁序.同时,第一性原理计算表明单层CoH_(2)SeO_(4)具有反铁磁(AFM-I)基态(TN≈75 K),且预测了二维CoH_(2)SeO_(4)薄膜具有以不对称的三重势阱态为特征的滑移铁电性,并在实验中测得了180°压电滞回线、可反转铁电畴和二次谐波信号.此外,在基于二维CoH_(2)SeO_(4)薄膜的电容器中获得铁电材料所特有的电滞回线和蝴蝶状的电容曲线.介电温谱测试表明二维CoH_(2)SeO_(4)薄膜的铁电转变温度约为370 ***_(2)SeO_(4)中滑移铁电性和反铁磁性的出现为获得低维多铁材料指出了一条新的途径.

关键词： two-dimensional materials sliding ferroelectricity multiferroic materials

In-situ artificial retina with all-in-one reconfigurable photomemristor networks

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npj Flexible Electronics 2023年第1期7卷 265-273页

作者： Yichen Cai Yizhou Jiang Chenxu Sheng Zhiyong Wu Luqiu Chen Bobo Tian chungang duan Shisheng Xiong Yiqiang Zhan Chunxiao Cong Zhi-Jun Qiu Yajie Qin Ran Liu Laigui Hu School of Information Science and Technology Fudan UniversityShanghai 200433China Key Laboratory of Polar Materials and Devices(MOE) Department of ElectronicsEast China Normal UniversityShanghai 200241China Yiwu Research Institute of Fudan University Yiwu CityZhejiang 322000China

Despite that in-sensor processing has been proposed to remove the latency and energy consumption during the inevitable data transfer between spatial-separated sensors,memories and processors in traditional computer vision,its hardware implementation for artificial neural networks(ANNs)with all-in-one device arrays remains a challenge,especially for organic-based *** the advantages of biocompatibility,low cost,easy fabrication and flexibility,here we implement a self-powered in-sensor ANN using molecular ferroelectric(MF)-based photomemristor *** ferroelectric depolarization was intentionally introduced into the ANN,which enables reconfigurable conductance and *** photoresponsivity as synaptic weight,the MFbased in-sensor ANN can operate analog convolutional computation,and successfully conduct perception and recognition of white-light letter images in experiments,with low processing energy *** Chinese digits are also recognized and regressed by a large-scale array,demonstrating its scalability and potential for low-power processing and the applications in MF-based in-situ artificial retina.

关键词： artificial networks ferroelectric