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Science China(physics,Mechanics & Astronomy) 2014年第4期57卷 615-618页

作者： HE LiPing LIU Shuang dai junbeijing national laboratory for condensed matter physics Institute of physics Chinese Academy of Sciences Lü HuiBin JIN KuiJuan YANG GuoZhen Beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences

Selected Mouse IgG of 1 mg/mL as target was fabricated on microarray for 500 sample ***-free and real-time reaction dynamic processes were detected between the microarrays with Goat Anti-mouse IgG of 0.02 mg/mL using the obliqueincidence reflectivity difference(OIRD)*** obtained the reaction results and the reaction dynamic curves of 500 protein *** addition,we also used label-free detection of protein microarrays of 10080 sample dots,including BSA and different concentrations of Mouse IgG and Rabbit IgG,by *** obtained reaction results between the protein microarray with 1 mg/mL Goat Anti-mouse IgG and 1 mg/mL Goat Anti-rabbit IgG are reported *** results show that OIRD can be not only label-free high-throughput detection method for biological microarrays but also label-free real-time detection in the interaction processes of biomolecules.

关键词： oblique-incidence reflectivity difference(OIRD) label-free real-time high-throughput

Anomalous Hall effect in perpendicular CoFeB thin films

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Chinese physics B 2014年第4期23卷 9-17页

作者：朱涛 Institute of physics and Beijing national laboratory for condensed matter physics Chinese Academy of Sciences

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.

关键词： anomalous Hall effect perpendicular magnetic anisotropy magnetic properties of interfaces

Interference pattern generation and simulation in the single beam of a white light continuum

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Science China(physics,Mechanics & Astronomy) 2010年第6期53卷 1060-1064页

作者： YU ZhiHao & WENG YuXiang laboratory of Soft matter physics,Institute of physics,Chinese Academy of Sciences,and national laboratory of condensed matter physics,Beijing 100190,China 1. laboratory of Soft matter physics Institute of Physics Chinese Academy of Sciences and National Laboratory of Condensed Matter Physics Beijing 100190 China

We demonstrate the interference phenomenon in the White Light Continuum(WLC) generated by a single femtosecond laser beam. Different kinds of spatial interference patterns of the WLC generation under various conditions were investigated. The spatial patterns were attributed to interference between the filaments in the WLC generated by the fundamental laser beam yielding the diffraction effect from spatial confinement. Simulations of different patterns were performed. By comparing the results of simulation with those of experiments,the distances of several micrometers between the neighboring filaments can be derived,which agree with the literature values from direct measurements.

关键词： interference supercontinuum generation ultrafast nonlinear optics

Single-molecule studies of DNA by molecular combing

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Progress in Natural Science:Materials International 2007年第5期17卷 493-499页

作者： Liu Yuying, Wang Pengye and Dou Shuoxing (College of Science, China Agricultural University, Beijing 100083, China laboratory of Soft matter physics, Beijing national laboratory for condensed matter physics, Institute of physics, Chinese Academy of Sciences, Beijing 100080, China) [a]College of Science China Agricultural University Beijing China [b]laboratory of Soft matter physics Beijing National Laboratory for Condensed Matter PhysicsInstitute of Physics Chinese Academy of Sciences Beijing China

Molecular combing is a powerful method for aligning a large array of DMA molecules onto a surface. It is a process whereby DNA molecules are stretched and aligned on a glass surface by the force via fluid flow. The ability to comb up to several hundred DNAs on a single cover slip allows for a statistically significant number of measurements to be made. These features make molecular combing an attractive tool for genomic studies, such as DNA replication, DNA transcription, DNA-protein interaction and so on. In this review article, we discuss the molecular combing principle, method and its applications.

关键词： DNA molecule molecular combing DNA-protein interaction.

A 3.9 V polyanion-type cathode material for Li-ion batteries

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Progress in Natural Science:Materials International 2011年第3期21卷 211-215页

作者： Lei LIU,Bin ZHANG,Xue-jie HUANG Beijing national laboratory for condensed matter physics, Institute of physics,Chinese Academy of Sciences,Beijing,100190,China Beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

Monoclinic phase LiFeSO4F was synthesized by a simple fast solid state reaction from the mixture of FeSO4·7H2O and LiF pulverized by high energy ball milling.m-LiFeSO4F was confirmed by GITT measurement to be a 3.9 V polyanion-type cathode materials for Li-ion *** electrochemical activity can be enhanced by addition of carbon.A discharge capacity of 105 mA·h/g (70%of theoretical value) was achieved for a m-LiFeSO4F/CNT *** separation behavior during lithium extraction and insertion was observed by ex-situ XRD test.

关键词： LiFeSO4F polyanion cathode Li-ion battery

Carbon nanotube transistors with graphene oxide films as gate dielectrics

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Science China(physics,Mechanics & Astronomy) 2010年第5期53卷 828-833页

作者： FU WangYang,LIU Lei,WANG WenLong,WU MuHong,XU Zhi,BAI XueDong & WANG EnGe Beijing national laboratory for condensed matter physics,Institute of physics,Chinese Academy of Sciences,Beijing 100190,China 1. Beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation *** essential component for the development of advanced nanoelectronics devices is processing-compatible ***,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient *** exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

关键词： carbon-based nanoelectronics graphene oxide gate dielectrics

High resistance modulation by the electric field based on La_(0.9)Sr_(0.1)MnO_3/SrTiO_3/Si structure

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Science China(physics,Mechanics & Astronomy) 2009年第9期52卷 1299-1301页

作者： YANG Fang, HE Meng, WEN Juan, JIN KuiJuan, LU HuiBin & YANG GuoZhen Beijing national laboratory for condensed matter physics, Institute of physics, Chinese Academy of Sciences, Beijing 100190, China Beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×107% and 2.6×106% when VDS are -2 and -6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting of perovskite oxides and Si.

关键词： field effect perovskite oxide thin films resistance modulation

Dye-sensitized solar cells: Atomic scale investigation of interface structure and dynamics

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Chinese physics B 2014年第8期23卷 2-12页

作者：马薇张帆孟胜 Beijing national laboratory for condensed matter physics and Institute of physics Chinese Academy of Sciences Collaborative Innovation Center of Quantum matter

Recent progress in dye-sensitized solar cells （DSC） research is reviewed, focusing on atomic-scale investigations of the interface electronic structures and dynamical processes, including the structure of dye adsorption onto Ti02, ultrafast electron injection, hot-electron injection, multiple-exciton generation, and electron-hole recombination. Advanced exper- imental techniques and theoretical approaches are briefly summarized, and then progressive achievements in photovoltaic device optimization based on insights from atomic scale investigations are introduced. Finally, some challenges and oppor- tunities for further improvement of dye solar cells are presented.

关键词： dye-sensitized solar cells interface structure absorption electron injection multiple-exciton generation charge recombination

Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

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Science China(physics,Mechanics & Astronomy) 2010年第3期53卷 445-448页

作者： WANG XiaoLi, WANG XiaoHui, JIA HaiQiang, XING ZhiGang & CHEN Hong Beijing national laboratory of condensed matter, Institute of physics, Chinese Academy of Sciences, Beijing 100080, China 1. Beijing national laboratory of condensed matter Institute of Physics Chinese Academy of Sciences Beijing 100080 China

Tremendous progress has been achieved in white light-emitting diodes (LEDs). To further improve the quality of white light and simplify the fabrication process, a single chip white-light LED with the InGaN underlying layer (UL) was studied and fabricated. The turn-on voltage of this type of LED was 2.7 V, and the spectrum at a forward bias current of 20 mA was comprised of blue (443 nm) and yellow (563 nm) lights. The intensity ratio of blue to yellow light was almost constant with the in- creasing injection current in a certain scope, most important for the solid state illumination. The useful life test showed the light output level remained at a 90% light output level at the driving current of 40 mA after 300 h, meanwhile, the UV and blue LEDs combined with phosphor reached a 20% value after 144 h within 300 h.

关键词： GaN InGaN white light LED MOCVD

Oxygen vacancy induced magnetism in BaTiO_(3-δ) and Nb:BaTiO_(3-δ) thin films

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Science China(physics,Mechanics & Astronomy) 2010年第5期53卷 852-855页

作者： YANG Fang,JIN KuiJuan,LU HuiBin,HE Meng,WANG Cong,WEN Juan & YANG GuoZhen Beijing national laboratory for condensed matter physics,Institute of physics,Chinese Academy of Sciences,Beijing 100190,China 1. Beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

The unusual magnetic properties are observed in oxygen deficient BaTiO3-δ(BTO) and Nb:BaTiO3-δ(BNTO) thin films fabricated on SrTiO3 substrates by laser molecular beam *** distinct magnetic hysteresis loops are observed in the oxygen deficient BTO and BNTO thin films in a temperature range of 5 to 300 K,whereas the diamagnetism is observed in both BTO and BNTO annealed at 1 atm of *** dopant Nb only enhances the magnetization in BNTO thin films,but has little effect on the *** magnetism of BTO and BNTO films is proposed to be the oxygen vacancies by origin.

关键词： oxygen vacancy magnetism BaTiO3-δ(BTO) Nb:BaTiO3-δ(BNTO) thin films