A novel backend process is developed for thecylindrical Ru/TaO/Ru capacitor for 130nm generationdRAMs to achieve good electrical *** gas(3%H/97%N)anneal(FGA) induceddegradation can be effectively *** thecylindrical Ru...
A novel backend process is developed for thecylindrical Ru/TaO/Ru capacitor for 130nm generationdRAMs to achieve good electrical *** gas(3%H/97%N)anneal(FGA) induceddegradation can be effectively *** thecylindrical Ru/TaO/Ru capacitor with full backendprocesses,including passivation layer formation and aFGA,the cell leakage current and cell capacitance are1fA(at±0.8V at 85℃)and 15ff,respectively.
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