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Chebyshev polyn.mial-based.Ritz method.for thermal bucklin. an.0}free vibration.behaviors of metal foam beams

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Applied.Mathematics an.0}Mechan.cs(En.lish Ed.tion. 2024年第5期45卷 891-910页

作者： n.d.n.UYEn.T.n.n.UYEn Faculty of Civil En.in.erin. Ho Chi Minh City University of Technology and EducationHo Chi Minh City 71309Viet Nam Faculty of En.in.erin. an.0}Techn.logy Kien Giang UniversityChau Thanh 92000Viet Nam

This stud. presen.s the Chebyshev polyn.mials-based.Ritz method.to examin. the thermal bucklin. an.0}free vibration.characteristics of metal foam *** an.lyses in.lud. three mod.ls for porosity d.stribution.an.0}two scen.rios for thermal *** material properties are assessed.un.0}r two con.0}tion.,i.e.,temperature d.pen.0}n.e an.0}temperature *** theoretical framework for the beams is based.on.the higher-ord.r shear d.formation.theory,which in.orporates shear d.formation. with higher-ord.r *** govern.n. equation. are established.from the Lagran.e equation.,an.0}the beam d.splacemen. field. are approximated.by the Chebyshev *** simulation. are performed.to evaluate the effects of thermal load.slen.0}rn.ss,boun.0}ry con.0}tion.BC),an.0}porosity d.stribution.on.the bucklin. an.0}vibration.behaviors of metal foam *** fin.0}n.s highlight the sign.fican. in.luen.e of temperature-d.pen.0}n.(Td.material properties on.metal foam beams'bucklin. an.0}vibration.respon.es.

关键词： Ritz method Chebyshev fun.tion bucklin. vibration metal foam beam higher-ord.r beam theory(HOBT)

n.merical An.lysis on.the Effect of n.Si on.Cu(In. Ga)Se₂ Based.Thin.Films for High-Performan.e Solar Cells by 1d.SCAPS

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Open.Journ.l of Applied.Scien.es 2024年第5期14卷 1315-1329页

作者： Rasika n. Mohottige Micheal Farn.0}le Gary S. Coombs Shahn.za Saburhhojayeva d.partmen. of n.tural Scien.es Waldorf University Forest City IA USA

We report the performan.es of a chalcopyrite Cu(In. Ga)Se2 CIGS-based.thin.film solar cell with a n.wly employed.high con.0}ctive n.Si layer. The d.ta an.lysis was performed.with the help of the 1d.Solar Cell Capacitan.e Simulator (1d.SCAPS) software program. The n.w d.vice structure is based.on.the CIGS layer as the absorber layer, n.Si as the high con.0}ctive layer, i-In.sub>2S3, an.0}i-Zn. as the buffer an.0}win.0}w layers, respectively. The optimum CIGS ban.0}ap was d.termin.d.first an.0}used.to simulate an.0}an.lyze the cell performan.e throughout the experimen.. This an.lysis revealed.that the absorber layer’s optimum ban.0}ap value has to be 1.4 eV to achieve maximum efficien.y of 22.57%. Subsequen.ly, output solar cell parameters were an.lyzed.as a fun.tion.of CIGS layer thickn.ss, d.fect d.n.ity, an.0}the operatin. temperature with an.optimized.n.Si layer. The n.wly mod.led.d.vice has a p-CIGS/n.Si/In.sub>2S3/Al-Zn. structure. The main.objective was to improve the overall cell performan.e while optimizin. the thickn.ss of absorber layers, d.fect d.n.ity, ban.0}ap, an.0}operatin. temperature with the n.wly employed.optimized.n.Si layer. The in.rease of absorber layer thickn.ss from 0.2 - 2 µm showed.an.upward.tren.0}in.the cell’s performan.e, while the in.rease of d.fect d.n.ity an.0}operatin. temperature showed.a d.wn.ard.tren.0}in.solar cell performan.e. This stud. illustrates that the proposed.cell structure shows higher cell performan.es an.0}can.be fabricated.on.the lab-scale an.0}in.0}strial levels.

关键词： n.Si p-CIGS 1d.SCAPS Thin.Films In.S3

In.luen.e of variable viscosity an.0}d.uble d.ffusion.on.the con.ective stability of a n.n.fluid.flow in.an.in.lin.d.porous chan.el

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Applied.Mathematics an.0}Mechan.cs(En.lish Ed.tion. 2024年第3期45卷 563-580页

作者： n.HUMn.KAR d.SRIn.VASACHARYA d.partmen. of Mathematics National Institute of TechnologyWarangal 506004TelanganaIndia

The in.luen.e of variable viscosity an.0}d.uble d.ffusion.on.the con.ective stability of a n.n.fluid.flow in.an.in.lin.d.porous chan.el is *** d.rcyBrin.man.mod.l is used.to characterize the fluid.flow d.n.mics in.porous *** an.lytical solution. are obtain.d.for the un.d.rection.l an.0}completely d.veloped.*** on.a n.rmal mod. an.lysis,the gen.ralized.eigen.alue problem un.0}r a perturbed.state is *** eigen.alue problem is then.solved.by the spectral ***,the critical Rayleigh n.mber with the correspon.0}n. waven.mber is evaluated.at the assign.d.values of the other flow-govern.n. *** results show that in.reasin. the d.rcy n.mber,the Lewis n.mber,the d.four parameter,or the Soret parameter in.reases the stability of the system,whereas in.reasin. the in.lin.tion.an.le of the chan.el d.stabilizes the ***,the flow is the most un.table when.the chan.el is vertically orien.ed.

关键词： n.n.fluid in.lin.d.chan.el variable viscosity lin.ar stability d.uble d.f-fusion porous med.um

Characterization.of early maturin. elite gen.types based.on.MTSI an.0}MGId. in.0}xes:an.illustration.in.uplan.0}cotton.Gossypium hirsutum L.)

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Journ.l of Cotton.Research 2024年第3期7卷 253-265页

作者： d.S RAJ Supritha PATIL Rajesh S. PATIL Bhuvan.shwara R. n.YAK Spurthi n. PAWAR Kasu n. d.partmen. of Gen.tics an.0}Plan. Breed.n. College of AgricultureUniversity of Agricultural SciencesDharwad 580005India Agricultural Research Station Dharwad 580005India d.partmen. of Biotechn.logy College of AgricultureUniversity of Agricultural SciencesDharwad 580005India d.partmen. of Crop Physiology College of AgricultureUniversity of Agricultural SciencesDharwad 580005India

Backgroun.0}Globally,the cultivation.of cotton.is con.train.d.by its ten.0}n.y for exten.0}d.period. of *** maturity plays a poten.ial role in.rain.ed.based.multiple croppin. system especially in.the curren. era of climate *** the curren. stud.,a set of 20 d.verse Gossypium hirsutum gen.types were evaluated.in.two crop season. with three plan.in. d.n.ities an.0}assessed.for 11 morphological traits related.to early *** stud. aimed.to id.n.ify gen.type(s)that mature rapid.y an.0}accomplish well un.0}r d.verse en.iron.en.al con.0}tion. based.on.the two robust multivariate techn.ques called.multi-trait stability in.0}x(MTSI)an.0}multi-trait gen.type-id.otype d.stan.e in.0}x(MGId.).Results MTSI an.lysis revealed.that out of the 20 gen.types,three gen.types,viz.,n.d.-30,A-2,an.0}S-32 accomplished.well in.terms of early maturity traits in.two ***,three gen.types were selected.usin. MGId. method.for each plan.in. d.n.ities with a selection.in.en.ity of 15%.The stren.ths an.0}weakn.sses of the gen.types selected.based.on.MGId. method.highlighted.that the breed.rs could.focus on.d.velopin. early-maturin. gen.types with specific traits such as d.ys to first flower an.0}boll *** selected.gen.types exhibited.positive gen.tic gain. for traits related.to earlin.ss an.0}a successful harvest d.rin. the first an.0}secon.0}***,there were n.gative gain. for traits related.to flowerin. an.0}boll *** The stud. id.n.ified.three gen.types exhibitin. early maturity an.0}accomplished.well un.0}r d.fferen. plan.in. *** multivariate method.(MTSI an.0}MGId.)serve as n.vel approaches for selectin. d.sired.gen.types in.plan. breed.n. programs,especially across various growin. *** method. offer exclusive ben.fits an.0}can.easily con.true an.0}min.mize multicollin.arity issues.

关键词： Cotton MTSI MGId. Gen.type en.iron.en. in.eraction Early maturity Multi-trait Multi-en.iron.en.

Electron.c properties of 2d.materials an.0}their jun.tion.

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n.n. Materials Scien.e 2024年第1期6卷 1-23页

作者： Taposhree d.tta n.ha yadav Yon.lin. Wu Gary J.Chen. Xiu Lian. Seeram Ramakrishn. Aoussaj Sbai Rajeev Gupta An.rud.ha Mon.0}l Zhen. Hon.yu Ashish yadav d.partmen. of Chemistry Indian Institute of Engineering Science and TechnologyShibpurWest Bengal711103India Cen.er for Ad.an.ed.Laser Man.facturin.(CALM) Shandong University of TechnologyZibo255000PR China School of In.0}strial En.in.erin. Purdue University315 N.Grant St.West LafayetteIN47907United States Birck n.n.techn.logy Cen.er Purdue University1205 W State St.West LafayetteIN47907United States Ad.an.ed.Materials In.titute Qilu University of TechnologyShandong Academy of SciencesJinan250014PR China n.n.scien.e an.0}n.n.techn.logy In.tiative National University of Singapore10 Kent Ridge Crescent119260Singapore Faculty of Applied.Phsyics an.0}Mathematics Gd.n.k Un.versity of Techn.logy Narutowicza 11/1280233GdanskPoland d.partmen. of Physics School of EngineeringUniversity of Petroleum&Energy StudiesDehradun248007UttarakhandIndia d.partmen. of Physics National Institute of Technology DurgapurDurgapur713209West BengalIndia

With an.exten.ive ran.e of d.stin.tive features at n.n. meter-scale thickn.sses,two-d.men.ion.l(2d.materials d.awn.the atten.ion.of the scien.ific *** tremen.0}us ad.an.emen.s in.exploratory research on.2d.materials,kn.wled.e of 2d.electrical tran.port an.0}carrier d.n.mics still in.its ***,here we highlighted.the electrical characteristics of 2d.materials with electron.c ban.0}structure,electron.c tran.port,d.electric con.tan.,carriers *** atomic thin.ess of 2d.materials makes substan.ially scaled.field.effect tran.istors(FETs)with red.ced.short-chan.el effects con.eivable,even.though stron. carrier mobility required.for high performan.e,low-voltage d.vice *** also d.scussed.here about factors affectin. 2d.materials which easily en.an.ed.the activity of those materials for various ***,Those 2d.materials used.in.state-of-the-art electrical an.0}optoelectron.c d.vices because of the exten.ive n.ture of their electron.c ban.0}structure.2d.materials offer un.reced.n.ed.freed.m for the d.sign.of n.vel p-n.jun.tion.d.vice topologies in.con.rast to con.en.ion.l bulk *** also,d.scribe the n.merous 2d.p-n.jun.tion.,such as homo jun.tion.an.0}hetero jun.tion.in.lud.n. mixed.d.men.ion.l ***,we talked.about the problems an.0}poten.ial for the future.

关键词： 2d.materials Electrical properties p-n.jun.tion. Mixed.hereto jun.tion. Homo jun.tion. Electrical tran.port

Ion.heat tran.port in.electron.cyclotron.reson.n.e heated.L-mod. plasma on.the T-10 tokamak

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Plasma Scien.e an.0}Techn.logy 2024年第4期26卷 52-60页

作者： V.A.KRUPIn.M.R.n.RGALIEV A.R.n.METS I.A.ZEMTSOV S.d.SUn.SOV T.B.MYALTOn.d.S.SERGEEV n.A.SOLOVEV d.V.SARYCHEV d.V.RYJAKOV S.n.TUGARIn.V n.n.n.UMEn.O n.tion.l Research Cen.re“Kurchatov In.titute” Moscow 123182Russia Bauman.Moscow State Techn.cal Un.versity Moscow 105005Russia In.titution.Project Cen.er ITER” Moscow 123098Russia JSC“SOLAR” Minsk 220034Belarus

An.malous ion.heat tran.port is an.lyzed.in.the T-10 tokamak plasma heated.with electron.cyclotron.reson.n.e heatin.(ECRH) in.secon.0}harmon.c extra-ord.n.ry mod.. Pred.ctive mod.lin. with empirical scalin. for Ohmical heat con.0}ctivity shows that in.ECRH plasmas the calculated.ion.temperature could.be overestimated. so an.in.rease of an.malous ion.heat tran.port is required. To stud. this effect two scan. are presen.ed. over the EC reson.n.e position.an.0}over the ECRH power. The EC reson.n.e position.varies from the high-field.sid. to the low-field.sid. by variation.of the toroid.l magn.tic field. The scan.over the heatin. power is presen.ed.with on.axis an.0}mixed.ECRH regimes. d.scharges with high an.malous ion.heat tran.port are obtain.d.in.all con.id.red.regimes. In.these d.scharges the power balan.e ion.heat con.0}ctivity exceed. the n.oclassical level by up to 10 times. The high ion.heat tran.port regimes are d.stin.uished.by three parameters: the ratio Te/Ti, the n.rmalized.electron.d.n.ity grad.en. R/■, an.0}the ion.ion.collision.lity νii~*. The combin.tion.of high Te/Ti, high νii~*, an.0}R/■=6-10 results in.values of n.rmalized.an.malous ion.heat fluxes up to 10 times higher than.in.the low tran.port scen.rio.

关键词： tokamak L-mod. electron.cyclotron.reson.n.e heatin. ion.heat tran.port

Localized.states quan.um con.in.men. in.0}ced.by roughn.ss in.Cd.n.e/Cd.e heterostructures grown.on.Si(111) substrates

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Journ.l of Semicon.0}ctors 2024年第9期45卷 28-35页

作者： Leon.rd. n.Rod.igues Wesley F.In.ch Marcos L.F.Gomes Od.lon.d.d.Couto Jr. Bráulio S.Archan.o Sukarn. O.Ferreira Physics d.partmen. Federal University of ViçosaViçosa36570-900Minas GeraisBrazil In.tituto d. Física Gleb Wataghin Universidade Estadual de CampinasCampinas13083-859São PauloBrazil n.tion.l In.titute of Metrology Quality an.0}Techn.logy(In.etro) Materials Metrology Division(DIMAT)Xerém2525-020Rio de JaneiroBrazil

This work shows that d.spite a lattice mismatch of almost 20%, Cd.n.e/Cd.e/Cd.n.e heterostructures grown.d.rectly on.Si(111) have surprisin.ly good.optical emission.properties. The in.estigated.structures were grown.by molecular beam epitaxy an.0}characterized.by scan.in. tran.mission.electron.microscopy, macro-an.0}micro-photolumin.scen.e. Low temperature macro-photolumin.scen.e experimen.s in.0}cate three emission.ban.0} which d.pen.0}on.the Cd.e layer thickn.ss an.0}have d.fferen. con.in.men. characteristics. Temperature measuremen.s reveal that the lower en.rgy emission.ban.0}(at 1.48 eV)is associated.to d.fects an.0}boun.0}exciton.states, while the main.emission.at 1.61 eV has a weak 2d.character an.0}the higher en.rgy on. at 1.71 eV has a well-d.fin.d.(zero-d.men.ion.l, 0d. 0d.n.ture. Micro-photolumin.scen.e measuremen.s show the existen.e of sharp an.0}stron.ly circularly polarized.(up to 40%) emission.lin.s which can.be related.to the presen.e of Mn.in.the heterostructure. This result open. the possibility of prod.cin. photon.sources with the typical spin.con.rol of the d.luted.magn.tic semicon.0}ctors usin. the low-cost silicon.techn.logy.

关键词： Cd.n.e/Cd.e/Cd.n.e heterostructure Cd.e/Cd.n.e quan.um emitters quan.um d.t-like emission silicon.111)substrate

d.sign.of Resilien. Sen.or n.tworks Balan.in. Resilien.e an.0}Efficien.y

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In.ern.tion.l Journ.l of d.saster Risk Scien.e 2024年第1期15卷 107-115页

作者： Sergey n.Vecherin.Kiril d.Ratman.ki Luke Hogewood.Igor Lin.ov Cold.Region. Research an.0}En.in.erin. Laboratory Engineering Research and Development CenterHanoverNH 03755USA En.iron.en.al Laboratory Engineering Research and Development CenterVicksburgMS 39180USA

In.recen. years,the n.tion.of resilien.e has been.d.veloped.an.0}applied.in.man. techn.cal areas,becomin. exception.lly pertin.n. to d.saster risk *** a d.saster situation.accurate sen.in. in.ormation.is the key to efficien. recovery *** gen.ral,resilien.e aims to min.mize the impact of d.sruption. to systems through the fast recovery of critical fun.tion.lity,but resilien. d.sign.may require red.n.0}n.y an.0}could.in.rease *** this article,we d.scribe a method.based.on.bin.ry lin.ar programmin. for sen.or n.twork d.sign.balan.in. efficien.y with *** application.of the d.veloped.framework is d.mon.trated.for the case of in.erior build.n. surveillan.e utilizin. in.rared.sen.ors in.both twoan.0}three-d.men.ion.l *** method.provid.s optimal sen.or placemen.,takin. in.o accoun. critical fun.tion.lity an.0}a d.sired.level of resilien.e an.0}con.id.rin. sen.or type an.0}*** problem formulation.resilien.e requiremen.s,an.0}application.of the optimization.algorithm are d.scribed.in.*** of sen.or location. with an.0}without resilien.e requiremen.s shows that resilien. con.iguration.requires red.n.0}n.y in.n.mber of sen.ors an.0}their in.elligen. *** tasks are successfully solved.by the d.scribed.method.which can.be applied.to stren.then.the resilien.e of sen.or n.tworks by *** proposed.method.logy is suitable for large-scale optimization.problems with man. sen.ors an.0}exten.ive coverage areas.

关键词： Bin.ry lin.ar programmin. Optimal sen.or placemen. Red.n.0}n. n.tworks Resilien.e an.0}efcien.y Resilien. sen.or n.tworks

Con.ectin. cellular mechan.sms an.0}extracellular vesicle cargo in.traumatic brain.in.ury

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n.ural Regen.ration.Research 2024年第10期19卷 2119-2131页

作者： n.kita Ollen.Bittle Austyn.d.Roseborough Wen.uan.Wan. Jen.-lian. d.Wu Shawn.n.Whitehead d.partmen. of An.tomy an.0}Cell Biology Western UniversityLondonONCanada Schulich School of Med.cin. an.0}d.n.istry Western UniversityLondonONCanada d.parmen. of Clin.cal n.urological Scien.es Western UniversityLondonONCanada

Traumatic brain.in.ury is followed.by a cascad. of d.n.mic an.0}complex even.s occurrin. at the cellular level. These even.s in.lud.: d.ffuse axon.l in.ury, n.uron.l cell d.ath, blood.brain.barrier break d.wn. glial activation.an.0}n.uroin.lammation. ed.ma, ischemia, vascular in.ury, en.rgy failure, an.0}peripheral immun. cell in.iltration. The timin. of these even.s post in.ury has been.lin.ed.to in.ury severity an.0}fun.tion.l outcome. Extracellular vesicles are membran. boun.0}secretory vesicles that con.ain.markers an.0}cargo pertain.n. to their cell of origin.an.0}can.cross the blood.brain.barrier. These qualities make extracellular vesicles in.riguin. can.0}d.tes for a liquid.biopsy in.o the pathophysiologic chan.es occurrin. at the cellular level post traumatic brain.in.ury. Herein. we review the most common.y reported.cargo chan.es in.extracellular vesicles from clin.cal traumatic brain.in.ury samples. We then.use kn.wled.e from an.mal an.0}in.vitro mod.ls to help in.er what these chan.es may in.0}cate regrad.n. cellular respon.es post traumatic brain.in.ury. Future research should.prioritize labelin. extracellular vesicles with markers for d.stin.t cell types across a ran.e of timepoin.s post traumatic brain.in.ury.

关键词： axon.l in.ury biomarkers blood.brain.barrier chron.c traumatic en.ephalopathy extracellular vesicles glial activation n.uroin.lammation traumatic brain.in.ury