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Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

Science China(Information Sciences) 2024年第9期67卷 346-347页

作者： Yong ZHANG Dongxin TAN cizhe fang Zheng-Dong LUO Qiyu YANG Qiao ZHANG Yu ZHANG Xuetao GAN Yan LIU Yue HAO Genquan HAN State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University Hangzhou Institute of Technology Xidian University Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and TechnologyNorthwestern Polytechnical University

Machine vision has become crucial in the modern intelligence era, especially in rapidly developing applications such as autonomous vehicles and robotic visual sensors [1].With the ever-increasing requirements of visual recognition,tremendous amounts of data are captured by sensors and must be processed and stored [2].

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Germanium-tin alloys： applications for optoelectronics in mid-infrared spectra

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Opto-Electronic Advances 2018年第3期1卷 1-10页

作者： cizhe fang Yan Liu Qingfang Zhang Genquan Han Xi Gao Yao Shao Jincheng Zhang Yue Hao Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 China Key Laboratory for Informatization Electrical Appliances of Henan Province School of Electric and Information Engineering Zhengzhou Univer-sity of Light Industry Zhengzhou 450002 China State Key Laboratory of Power Grid Security and Energy Conservation China Electric Power Research Institute Beijing 100192 China

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关键词： Genquan Han|optoelectronics germanium-tin alloys mid-infrared spectra

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High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

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Opto-Electronic Advances 2021年第6期4卷 1-10页

作者： cizhe fang Qiyu Yang Qingchen Yuan Xuetao Gan Jianlin Zhao Yao Shao Yan Liu Genquan Han Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian UniversityXi’an 710071China MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Shanghai Energy Internet Research Institute of State Grid 251 Libing RoadPudong New AreaShanghai 201210China

The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum(BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.

关键词： all-dielectric metasurface bound states in the continuum optical nonlinearity topological configuration

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