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56 Gbps high-speed Ge electro-absorption modulator

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Photonics Research 2020年第10期8卷 1648-1652页

作者： ZHI LIU XIULI LI CHAOQUN NIU JUN ZHENG chunlai xue YUHUA ZUO BUWEN CHENG State Key Laboratory on integrated Optoelectronics lnstitute of SermiconductorsChinese Academy of SciencesBeljing 100083China Center of Matenials Science and Optoelectronics Engineering Udniversity of Chinese Academy of SciencesBeljing 100049china Beijing Academy of Quanturm inaformation Sciences Beijing T00193China

A high-speed evanescent-coupled Ge waveguide electro-absorption modulator(EAM)with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si *** grown Ge with a triangle shape was directly used for Ge waveguides of the *** asymmetric p-i-n junction was designed in the Ge waveguide to provide a strong electric field for Franz-Keldysh *** insertion loss of the Ge EAM was 6.2 dB at 1610 *** EAM showed the high electro-optic bandwidth of 36 GHz at-1 *** open 56 Gbps eye diagrams were observed at 1610 nm with a dynamic extinction ratio of 2.7 dB and dynamic power consumption of 45 fJ/bit for voltage swing of 3Vpp.

关键词： modulator waveguide absorption

25 × 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating

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Photonics Research 2019年第6期7卷 659-663页

作者： ZHI LIU JIASHUN ZHANG XIULI LI LIANGLIANG WANG JIANGUANG LI chunlai xue JUNMING AN BUWEN CHENG State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of SciencesBeijing 100083 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049 China

A high-performance monolithic integrated wavelength division multiplexing silicon(Si) photonics receiver chip is fabricated on a silicon-on-insulator platform. The receiver chip has a 25-channel Si nanowire-arrayed waveguide grating, and each channel is integrated with a high-speed waveguide Ge-on-Si photodetector. The central wavelength, optical insertion loss, and cross talk of the array waveguide grating are 1550.6 nm, 5–8 dB, and-12 –-15 dB, respectively. The photodetectors show low dark current density of 16.9 mA∕cm^2 at-1 V and a high responsivity of 0.82 A/W at 1550 nm. High bandwidths of 23 and 29 GHz are achieved at 0 and-1 V, respectively. Each channel can operate at 50 Gbps with low input optical power even under zero bias,which realizes an aggregate data rate of 1.25 Tbps.

关键词： division chip Gbps optical bias has can dB

Research progress of Ge on insulator grown by rapid melting growth

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Journal of Semiconductors 2018年第6期39卷 66-75页

作者： Zhi Liu Juanjuan Wen Chuanbo Li chunlai xue Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Optoelectronic Technology University of Chinese Academy of SciencesBeijing 100049China

Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor （CMOS） processes. Based on Ge, Ge on insulator （GOI） not only has these advantages, but also provides strong electronic and optical confinement. Recently, a novel technique to fabricate GOI by rapid melting growth （RMG） has been described. Here, we introduce the RMG technique and review recent efforts and progress in RMG. Firstly, we will introduce process steps of RMG. We will then review the researches which focus on characterizations of the GOI including growth dimension, growth mechanism, growth orientation, concentration distribution, and strain status. Finally, GOI based applications including high performance metal-oxide-semiconductor field effect transistors （MOSFETs） and photodetectors will be discussed. These results show that RMG is a promising technique for growth of high quality GOIs with different characterizations. The GOI grown by RMG is a potential material for the next-generation of integrated circuits and optoelectronic circuits.

关键词： rapid melting growth Ge on insulator MOSFET photodetectors

Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates

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Photonics Research 2020年第6期8卷 899-903页

作者： LINZHI PENG Xu LI ZHI LIU XIANGQUAN LIU JUN ZHENG chunlai xue YUHUA ZUO BUWEN CHENG State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeiing 100049China Beijing Academy of Quantum Information Sciences Bejing 100193China

A horizontal p-i-n ridge waveguide emitter on a slion(100)substrate with a Gen,g1Sno.c9/Ge multi quantum-well(MQW)active layer was fabricated by molecular beam *** device structure was designed to reduce light absorption of metal electrodes and improve injection ***(EL)at a wavelength of 2160 nm was observed at room *** calculations indicate that the emission peak corresponds well to the direct bandgap transition(nr-mHr).The light output power was about 2.0μW with an injection current density of 200 kA/cm^*** results show that the horizontal GeSn/Ge MQW ridge waveguide emiters have great pros-pects for group-IV light sources.

关键词： waveguide temperature. GeSn

Effect of the silicon substrate structure on chip spiral inductor

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Frontiers of Electrical and Electronic Engineering in China 2008年第1期3卷 110-115页

作者： chunlai xue Fei YAO Buwen CHENG Qiming WANG State Key Laboratory of Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this paper,the effect of the substrate structure on the performance of the spiral inductor is investigated by the 3-D electromagnetic simulator,Ansoft high frequency structure simulator(HFSS).With variations in the substrate structure including substrate conductivity,permittivity and thickness of the dielectric layer,the performance of the inductors has been analyzed in *** simulation results and analyses indicate that the performance of the spiral inductor can be mostly improved by lowering the conductivity of the substrate,increasing the thickness of the dielectric layer and using the low K dielectric *** the mean time,some guidelines or“design rules”are summarized by the results of this study.

关键词： silicon spiral inductor quality factor substrate structure

30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

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Photonics Research 2021年第4期9卷 494-500页

作者： Xiuli Li Linzhi Peng Zhi Liu Zhiqi Zhou Jun Zheng chunlai xue Yuhua Zuo Baile Chen Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Information Science and Technology ShanghaiTech UniversityShanghai 201210China Beijing Academy of Quantum Information Sciences Beijing 100193China

We report the demonstration of a normal-incidence p-i-n germanium-tin(Ge_(0.951)Sn_(0.049))photodetector on silicon-on-insulator substrate for 2μm wavelength *** DC and RF characteristics of the devices have been characterized.A dark current density under−1 V bias of approximately 125 mA/cm^(2) is achieved at room temperature,and the optical responsivity of 14 mA/W is realized for illumination wavelength of 2μm under−1 V reverse *** addition,a 3 dB bandwidth(f_(3dB))of around 30 GHz is achieved at−3 V,which is the highest reported value among all group III–V and group IV photodetectors working in the 2μm wavelength *** work illustrates that a GeSn photodetector has great prospects in 2μm wavelength optical communication.

关键词： 2μm GeSn SOI

Ge-on-Si for Si-based integrated materials and photonic devices

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Frontiers of Optoelectronics 2012年第1期5卷 41-50页

作者： Weixuan HU Buwen CHENG chunlai xue Shaojian SU Haiyun xue Yuhua ZUO Qiming WANG State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

This paper reviews the recent progress in photonic devices application of Ge-on-Si. Ge-on-Si materials and optical devices are suitable candidates for Si-based optoelectronic integration because of the mature epitaxial technique and the compatibility with Si complementary metal-oxide-semiconductor （CMOS） technology. Recently, the realities of electric-pump Ge light emitting diode （LED） and optical-pump pulse Ge laser, Ge quantum well modulator based on quantum Stark confined effect, waveguide Ge modulator based on Franz-Keldysh （FK） effect, and high performance near-infrared Ge detector, rendered the Si-based optoelectronic integration using Ge photonic devices. Ge-on-Si material is also an important platform to grow other materials on it for Si- based optoelectronic integration. InGaAs and GeSn have been grown on the Ge-on-Si. InGaAs LED and GeSn photodetector have been successfully fabricated as well.

关键词： optoelectronic integration Ge photonicdevice

Recent progress in GeSn growth and GeSn-based photonic devices

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Journal of Semiconductors 2018年第6期39卷 76-81页

作者： Jun Zheng Zhi Liu chunlai xue Chuanbo Li Yuhua Zuo Buwen Cheng Qiming Wang Institute of Semiconductors Chinese Academy of Sciences College of Materials Science and Optoelectronic Technology University of Chinese Academy of Sciences

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photode- tectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the mono- lithic integration of Si photonic circuits by the complementary metal-oxide-semiconductor （CMOS） technology.

关键词： GeSn material growth Si photonics optoelectronic integration

High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect

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Journal of Semiconductors 2017年第11期38卷 55-59页

作者： Wenzhou Wu Buwen Cheng Jun Zheng Zhi Liu Chuanbo Li Yuhua Zuo chunlai xue State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences

This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier *** the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.

关键词： avalanche photodiode high-frequency tunneling effect high gain-bandwidth product fiber optic communication