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Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes

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Chinese Physics Letters 2012年第3期29卷 101-103页

作者： LI Ya-Ming HU Wei-Xuan cheng bu-wen LIU Zhi WANG Qi-Ming State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083

Ge-on-Si p-i-n diodes are fabricated by using two-step Ge film epitaxial technology on Si substrates.A remarkable Franz-Keldysh effect is observed in the wavelength range of 1620-1640nm with a largestΔα/αof 2.8 at 1640nm by optical responsivity *** remarkable change of absorption coefficient in the considerable large wavelength range makes Ge-on-silicon a promising candidate for Si-based electro-absorption *** initial design predicts a modulator of bandwidth~50 GHz,and the extinction ratio>7dB by the measured parameter.

关键词： measurement parameter modulator

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

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Chinese Physics B 2012年第1期21卷 493-498页

作者： Hu Wei-Xuan cheng bu-wen Xue Chun-Lai Zhang Guang-Ze Su Shao-Jian Zuo Yu-Hua Wang Qi-Ming State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.

关键词： Ge multiple quantum wells strain compensated

Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge buffer

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Chinese Physics Letters 2013年第11期30卷 195-198页

作者： SU Shao-Jian HAN Gen-Quan ZHANG Dong-Liang ZHANG Guang-Ze XUE Chun-Lai WANG Qi-Ming cheng bu-wen College of Information Science and Engineering Huaqiao UniversityXiamen 361021 Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China College of Optoelectronic EngineeringChongqing UniversityChongqing 400044 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesP.O.Box 912Beijing 100083

Germanium-tin(Ge_(1-x)Sn_(x))p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)were fabricated using a strained Ge_(0.985)Sn_(0.015) thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer *** Ge buffer was deposited using a two-step chemical vapor deposition growth *** high quality Ge_(0.985)Sn_(0.015) layer was grown by solid source molecular beam ***_(0.985)Sn_(0.015) pMOSFETs with Si surface passivation,TaN/HfO_(2) gate stack,and nickel stanogermanide[Ni(Ge_(1-x)Sn_(x))]source/drain were fabricated on the grown *** device achieves an effective hole mobility of 182 cm^(2)/V·s at an inversion carrier density of 1×10^(13) cm^(-2).

关键词： technique drain relaxed

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重掺B对应变SiGe材料能带结构的影响

物理学报 2007年第11期56卷 6654-6659页

作者：姚飞薛春来成步文王启明中国科学院半导体研究所集成光电子国家重点实验室北京100083

硅锗异质结双极晶体管(SiGeHBT)一般以重掺硼(B)的应变SiGe层作为基区.精确表征SiGe材料能带结构对SiGeHBT的设计具有重要的意义.在应变SiGe材料中,B的重掺杂一方面会因为重掺杂效应使带隙收缩,另一方面,B的引入还会部分补偿Ge引起的应... 详细信息

硅锗异质结双极晶体管(SiGeHBT)一般以重掺硼(B)的应变SiGe层作为基区.精确表征SiGe材料能带结构对SiGeHBT的设计具有重要的意义.在应变SiGe材料中,B的重掺杂一方面会因为重掺杂效应使带隙收缩,另一方面,B的引入还会部分补偿Ge引起的应变,从而改变应变引起的带隙变化.在重掺B的应变SiGe能带结构研究中,采用半经验方法,考虑了B的应变补偿作用对能带的影响,对Jain-Roulston模型进行修正,并分析了重掺杂引起的带隙收缩在导带和价带的分布.

关键词： SiGe材料应变带隙收缩(BGN) Jain-Roulston模型

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影响集成电感性能的关键因素

电子器件 2006年第1期29卷 105-109页

作者：姚飞成步文王启明中国科学院半导体研究所集成光电子国家重点实验室北京100083

片上集成电感是单片集成射频电路、微波电路及光电集成电路中不可缺少的重要元件。高Q值的片上集成电感是IC工作者追求的目标。衬底损耗和金属损耗一直被认为是限制集成电感品质的主要因素。文中实例为证,在尽量消除衬底损耗和减小金属... 详细信息

片上集成电感是单片集成射频电路、微波电路及光电集成电路中不可缺少的重要元件。高Q值的片上集成电感是IC工作者追求的目标。衬底损耗和金属损耗一直被认为是限制集成电感品质的主要因素。文中实例为证,在尽量消除衬底损耗和减小金属损耗条件下,得出它们并不是片上集成电感的决定性限制因素。本文从电感的定义出发,得出电感螺旋线之间磁通量的相互抵消是集成电感不能获得高Q值的决定因素。并通过螺旋电感的模拟计算和结合已有的实验,对此论点进行了论证。

关键词：螺旋电感品质因子磁通量衬底损耗金属损耗

Theoretical study of the optical gain characteristics of a Ge_(1-x)Sn_x alloy for a short-wave infrared laser

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Chinese Physics B 2015年第2期24卷 191-197页

作者：张东亮成步文薛春来张旭丛慧刘智张广泽王启明 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

Optical gain characteristics of Ge1-xSnμx are simulated *** an injection carrier concentration of 5×10^18/cm^3 at room temperature,the maximal optical gain of Ge0.922Sn0.078 alloy（with n-type doping concentration being 5×10^18/cm^3） reaches 500 cm^-***,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current *** simulation values of the device threshold current density Jth are 6.47 kA/cm^2（temperature：200 K,and λ=2050 nm）,10.75 kA/cm^2（temperature：200 K,and λ=2000 nm）,and23.12 kA/cm^2（temperature：300 K,and λ=2100 nm）,*** results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.

关键词： infrared GeSn alloys semiconductor lasers optoelectronic

Fanlian Huazhuo formula:A promising therapeutic approach for metabolic associated steatotic liver disease

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World Journal of Gastroenterology 2025年第1期31卷 167-171页

作者： Chun-Han cheng wen-Rui Hao Tzu-Hurng cheng Department of Medical Education Linkou Chang Gung Memorial HospitalTaoyuan 33305Taiwan Division of Cardiology Department of Internal MedicineShuang Ho HospitalMinistry of Health and WelfareTaipei Medical UniversityNew Taipei 23561Taiwan Division of Cardiology Department of Internal MedicineSchool of MedicineCollege of MedicineTaipei Medical UniversityTaipei 11002Taiwan Department of Biochemistry School of MedicineCollege of MedicineChina Medical UniversityTaichung 404328Taiwan

This article reviews the study,“Fanlian huazhuo formula alleviates high-fat-dietinduced nonalcoholic fatty liver disease by modulating autophagy and lipid synthesis signaling pathway”published in the World Journal of *** study explores the therapeutic potential of Fanlian Huazhuo formula(FLHZF)in treating metabolic-associated steatotic liver disease(MASLD),demonstrating that FLHZF reduces lipid accumulation,oxidative stress,and liver injury in MASLD models by modulating key signaling pathways involved in lipid metabolism and *** editorial emphasizes the potential of FLHZF as a treatment for MASLD and calls for further research to verify its clinical efficacy.

关键词： Fanlian Huazhuo formula Metabolic associated steatotic liver disease Autophagy Lipid metabolism Oxidative stress

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高频大功率SiGe/Si HBT的设计

半导体光电 2006年第3期27卷 271-277页

作者：薛春来成步文姚飞王启明中国科学院半导体研究所集成光电子国家重点联合实验室北京100083

详细地阐述了高频大功率SiGe/Si异质结双极晶体管(HBT)设计中的一些主要问题,主要包括器件的纵向设计中发射区、基区以及收集区中掺杂浓度、形貌分布、层厚的选择以及横向布局设计中的条宽、间隔的选择等。并对这些主要参数的选择给出... 详细信息

详细地阐述了高频大功率SiGe/Si异质结双极晶体管(HBT)设计中的一些主要问题,主要包括器件的纵向设计中发射区、基区以及收集区中掺杂浓度、形貌分布、层厚的选择以及横向布局设计中的条宽、间隔的选择等。并对这些主要参数的选择给出了一些实用的建议。

关键词： SiGe HBT 高频大功率

Real-world evidence on the efficacy and safety of vonoprazanamoxicillin dual therapy for Helicobacter pylori treatment in elderly patients

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World Journal of Gastroenterology 2025年第1期31卷 68-78页

作者： wen Gao Jing-wen Li Hui Ye Xue-Zhi Zhang Jian-Xiang Liu Hong cheng Department of Gastroenterology Peking University First HospitalBeijing 100034China School of Medicine Tsinghua MedicineTsinghua UniversityBeijing 100034China Department of Traditional Chinese Medicine and Integrative Medicine Peking University First HospitalBeijing 100034China

BACKGROUND A dual therapy regimen containing amoxicillin is a common treatment option for the eradication of Helicobacter pylori(***).While substantial research supports the efficacy and safety of vonoprazan and amoxicillin(VA)dual therapy in the general population,there is still a lack of studies specifically focusing on its safety in elderly *** To evaluate efficacy and safety of VA dual therapy as first-line or rescue treatment for *** in elderly *** As a real-world retrospective study,data were collected from elderly patients aged 60 years and above who accepted VA dual therapy(vonoprazan 20 mg twice daily+amoxicillin 1000 mg thrice daily for 14 days)for *** eradication in the Department of Gastroenterology at Peking University First Hospital between June 2020 and January *** status was evaluated by^(13)C-urease breath test 6 weeks after *** adverse events(AEs)during treatment were *** In total,401 cases were ***-one cases were excluded due to loss to follow-up,lack of re-examination,or unwillingness to take *** total of 380 included cases comprised 250 who received VA dual therapy as first-line treatment and 130 who received VA dual therapy as rescue *** was successfully eradicated in 239 cases(95.6%)in the first-line treatment group and 116 cases(89.2%)in the rescue treatment *** overall incidence of AEs was 9.5%for both ***,9.2%of patients experienced an AE in the first-line treatment group and 10.0%in the rescue treatment *** patients discontinued treatment due to AE,with a discontinuation rate of 1.3%.No serious AE *** The VA dual therapy regimen as a first-line treatment and a rescue therapy was effective and safe for elderly patients aged 60 and older.

关键词： Helicobacter pylori Vonoprazan Amoxicillin Dual therapy Elderly