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Ultraclean transfer of graphene by mechanically exfoliating polymer with modified crosslink density

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Nano Research 2024年第8期17卷 6795-6802页

作者： Qi Lu Jiawei Yang Chaofan Zhou Zhaoning Hu Saiyu Bu Bingbing guo Yixuan Zhao Junhao Liao Mingpeng Shang Ge chen Kaicheng Jia Jianbo yin qiang Zeng Li Lin Zhongfan Liu College of Science China University of Petroleum(Beijing)Beijing 102249China school of Materials Science and Engineering Peking UniversityBeijing 100871China Center for Nanochemistry Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular ScienceCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Beijing Graphene Institute Beijing 100095China Faculty of information Technology Beijing University of TechnologyBeijing 100124China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China Department of electronics Peking UniversityBeijing 100871China Second Clinical Division National Engineering Laboratory for Digital and Material Technology of StomatologyPeking University School and Hospital of StomatologyBeijing 100081China

The transfer of graphene from metallic substrates onto application-specific substrates is usually inevitable for the applications of high-quality graphene films derived from chemical vapour deposition(CVD)*** used to support the graphene films during the transfer,the coating of the polymer would produce the surface contaminations and hinder the industrially compatible *** this work,through the thermal imidization of polyamide acid(PAA)to polyimide(PI)and tuning of the concentration of dangling chains,we achieved the ultraclean and crack-free transfer of graphene wafers with high electronic *** resulting contamination-free and hydrophilic surface also enabled the observed improved cell viability in a biomedical *** avoiding aqueous etching or the usage of strong bases,our proposed transfer method is industrially compatible for batch transfer of graphene films towards the real applications.

关键词： chemical vapour deposition(CVD)graphene films graphene transfer ultraclean transfer transfer medium crosslink density cell viability assay

基于混合策略博弈的无人机辅助移动边缘计算任务卸载

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航空兵器 2024年第4期31卷 112-120页

作者：朱赟刘舒文陈强廖剑郭正玉陆春雨罗德林赣南师范大学物理与电子信息学院江西赣州341000 中国人民解放军92808部队海口570311 中国空空导弹研究院河南洛阳471009 中国人民解放军91504部队浙江台州318050 厦门大学航空航天学院福建厦门361102 空基信息感知与融合全国重点实验室河南洛阳471009

在单无人机辅助的移动边缘计算系统中,为使无人机能服务于大区域中的所有用户设备,可将大区域分成多个子区域,并设定无人机以固定路线在各个子区域间飞行来为用户设备提供计算服务。考虑到用户设备计算资源较匮乏且无人机覆盖区域外的... 详细信息

在单无人机辅助的移动边缘计算系统中,为使无人机能服务于大区域中的所有用户设备,可将大区域分成多个子区域,并设定无人机以固定路线在各个子区域间飞行来为用户设备提供计算服务。考虑到用户设备计算资源较匮乏且无人机覆盖区域外的用户可选择移动至覆盖区域内进行任务卸载以最大化自身效用,可将用户设备的部分卸载问题转化为每个用户设备的效用最大化问题,并利用混合策略博弈和子模博弈来分别确定用户设备的移动概率和卸载数据量,从而得出最优卸载策略,且分别证明了混合策略纳什均衡和纯策略纳什均衡的存在性。仿真结果表明,所提方案与MBO(Binary Offloading Based on Mixed Strategy Game)等经典方案相比可有效提高用户设备的效用,并验证了其收敛性和稳定性。

关键词：无人机移动边缘计算计算卸载混合策略博弈子模博弈

Synthesis of Fluorene-Bridged Arylene Vinylene Fluorophores： Effects of End-Capping Groups on the Optical Properties, Aggregation Induced Emission

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Chinese Journal of Chemistry 2015年第8期33卷 939-947页

作者： guo-Feng Zhang Tao chen Ze-qiang chen Matthew P. Aldred Xianggao Meng Ming-qiang zhu wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan Hubei 430074 China Department of Chemistry Durham University South Road Durham DH1 3LE UK Key Laboratory of Pesticide and Chemical Biology of Ministry of Education College of Chemistry Central China Normal University Wuhan Hubei 430079 China

We have synthesized a series of fluorene-based fluorophores, in which a central fluorene core has been modified with different peripheral arylene vinylene substituents that are able to activate aggregation-induced emission （AIE） characteristics. 9,9-Dioctylfluorene doubly end-capped at the 2,7-positions with triphenylethene groups, such as 4-（2,2-diphenylvinyl）phenyl （F1-（2,2）-HTPE） and 4-（1,2-dipbenylvinyl）phenyl （F1-（1,2）-HTPE） were synthesized and compared to the tetraphenylethene analogue （F1-TPE）. Both FI-（2,2）-HTPE and F1-（1,2）-HTPE glow with a deep blue fluorescence in THF solution with emission maxima （λem） of 426 and 403 nm, respectively. The λem slightly red-shifts in the solid-state to 458 nm for F 1-（2,2）-HTPE and 437 nm for F 1-（1,2）-HTPE. The fluorescence quantum yields （ΦF） of F1-（2,2）-HTPE （ΦF=35.1%） and FI-（1,2）-HTPE （ΦF=26.2%） were found to be higher in solution compared to the near quenching of F 1-TPE （ΦF = 0.1%）. Consequently, this results in weaker AIE-stability of F1-（2,2）-HTPE （αAIE= 1.5） and F1-（1,2）-HTPE （αAIE=1.9） compared to F1-TPE （αAIE=125）, suggesting that four phenyl groups are necessary for efficient AIE-activity of these fluorene bridged arylene vinylene type materials In addition, decreasing the steric hindrance around the arylene vinylene moiety by removal of a phenyl ring is an- other method to decrease the AIE characteristics, in a similar manner to the commonly known ＂phenyl-locking＂. Non-polar triphenylethenes are poorer AlE materials than their tetraphenylethene analogues. Replacing the hydro- gen atom of F1-（2,2）-HTPE with a cyano group affords fluorene end-capped with 2,3,3-triphenylacrylonitrile （F1-TPAN）, which boosts the AIE-effect to αAIE=90.5 and red-shifts the solid-state emission （λem=528 nm） with near quenching in THF solution （ΦF= 0.12%）. X-ray crystallographic analysis of F1-TPAN indicates that the intro- duction of cyano groups can not only diminish the intramolecular steric hindrance in comparison of F1-TPE, but

关键词： aggregation-induced emission fluorene triphenylethene tetraphenylethene 2,3,3-triphenylacrylonitrile

Optimized deployment of a radar network based on an improved firefly algorithm

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Frontiers of information Technology & electronic Engineering 2019年第3期20卷 425-437页

作者： Xue-jun ZHANG Wei JIA Xiang-min GUAN guo-qiang XU Jun chen Yan-bo zhu National Key Laboratory of CNS/ATM School of Electronic and Information EngineeringBeihang University Department of General Aviation Civil Aviation Management Institute of China Lincoln school of Engineering University of LincolnBrayford Pool Campus

The threats and challenges of unmanned aerial vehicle(UAV) invasion defense due to rapid UAV development have attracted increased attention recently. One of the important UAV invasion defense methods is radar network detection. To form a tight and reliable radar surveillance network with limited resources, it is essential to investigate optimized radar network deployment. This optimization problem is difficult to solve due to its nonlinear features and strong coupling of multiple constraints. To address these issues, we propose an improved firefly algorithm that employs a neighborhood learning strategy with a feedback mechanism and chaotic local search by elite fireflies to obtain a trade-off between exploration and exploitation abilities. Moreover, a chaotic sequence is used to generate initial firefly positions to improve population diversity. Experiments have been conducted on 12 famous benchmark functions and in a classical radar deployment scenario. Results indicate that our approach achieves much better performance than the classical firefly algorithm(FA) and four recently proposed FA variants.

关键词： Improved firefly algorithm Radar surveillance network Deployment optimization Unmanned aerial vehicle (UAV) invasion defense

Effective Electromagnetic Parameters and Absorbing Properties for Honeycomb Sandwich Structures with a Consideration of the Disturbing Term

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Chinese Physics Letters 2013年第10期30卷 183-186页

作者： HU Ji-Wei HE Si-Yuan RAO Zhen-Min zhu guo-qiang yin Hong-cheng school of electronic information Wuhan UniversityWuhan 430072 National Electromagnetic Scattering Laboratory Beijing 100854

The interaction between particles cannot be ignored when a high frequency electromagnetic wave is incident on a mixed *** fluctuation theory with correlation function is a suitable method to describe the *** with honeycomb sandwich structures with an absorber included are *** effective electromagnetic parameters and reflection coefficient of these materials are deduced and numerical results are *** with the method with a disturbing term not considered,this method shows better absorbing properties.

关键词： properties absorber method

Enhanced Anomalous Hall Effect of Pt on an Antiferromagnetic Insulator with Fully Compensated Surface

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Chinese Physics Letters 2022年第10期39卷 60-65页

作者： Yu Bai Zhe Wang Na Lei Wisal Muhammad Lifeng Xiang qiang Li Huilin Lai yinyan zhu Wenbing Wang Hangwen guo Lifeng yin Ruqian Wu Jian Shen State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing Fudan UniversityShanghai 200433China Shanghai Qi Zhi Institute Shanghai 200232China Department of Physics Fudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China Shanghai Research Center for Quantum Sciences Shanghai 201315China Fert Beijing Institute BDBCSchool of Electronic and Information EngineeringBeihang UniversityBeijing 100191China Department of Physics and Astronomy University of CaliforniaIrvineCalifornia 92697USA Collaborative Innovation Center of Advanced Microstructures Nanjing 210093China

We report a significantly enhanced anomalous Hall effect(AHE)of Pt on antiferromagnetic insulator thin film(3-unit-cell La_(0.7)Sr_(0.3)MnO_(3),abbreviated as LSMO),which is one order of magnitude larger than that of Pt on other ferromagnetic(e.g.Y_(3)Fe_(5)O_(12))and antiferromagnetic(***_(2)O_(3))insulator thin *** experiments demonstrate that the antiferromagnetic La_(0.7)Sr_(0.3)MnO_(3)with fully compensated surface suppresses the positive anomalous Hall resistivity induced by the magnetic proximity effect and facilitates the negative anomalous Hall resistivity induced by the spin Hall *** changing the substrate’s temperature during Pt deposition,we observed that the diffusion of Mn atoms into Pt layer can further enhance the *** anomalous Hall resistivity increases with increasing temperature and persists even well above the Neel temperature(T_(N))of *** Monte Carlo simulations manifest that the unusual rise of anomalous Hall resistivity above T_(N)originates from the thermal induced magnetization in the antiferromagnetic insulator.

关键词： effect ferromagnetic resistivity

Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8+δ

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Chinese Physics Letters 2020年第8期37卷 123-129页

作者： qiang Gao Lin Zhao cheng Hu Hongtao Yan Hao chen Yongqing Cai Cong Li ping Ai Jing Liu Jianwei Huang Hongtao Rong Chunyao Song Chaohui yin Qingyan Wang Yuan Huang guo-Dong Liu Zu-Yan Xu Xing-Jiang Zhou National Lab for Superconductivity Beijing National laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China school of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum information Sciences Beijing 100193China Songshan Lake Materials Laboratory Dongguan 523808China Technical Institute of Physics and Chemistry Chinese Academy of SciencesBeijing 100190China

High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers.A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are ***,by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+δ(Bi2212)sample surface to push its doping level continuously from deeply underdoped(Tc=25K,doping level p^0.066)to the near-zero doping parent Mott insulator,angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in the lightly hole-doped region for the first *** results indicate that the chemical potential lies at about l eV above the charge transfer band for the parent state at zero doping,which is quite close to the upper Hubbard *** increasing hole doping,the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like *** the chemical potential approaches the charge transfer band at a doping level of^0.05,the nodal spectral weight near the Fermi level increases,followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor *** observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories.

关键词： transition. doping superconductor

CEPC Technical Design Report

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Radiation Detection Technology and Methods 2024年第1期8卷 I0003-I0016,1-1091页

作者： Waleed Abdallah Tiago Carlos Adorno de Freitas Konstantin Afanaciev Shakeel Ahmad Ijaz Ahmed Xiaocong Ai Abid Aleem Wolfgang Altmannshofer Fabio Alves Weiming An Rui An Daniele Paolo Anderle Stefan Antusch Yasuo Arai Andrej Arbuzov Abdesslam Arhrib Mustafa Ashry Sha Bai Yu Bai Yang Bai Vipul Bairathi Csaba Balazs Philip Bambade Yong Ban Tripamo Bandyopadhyay Shou-Shan Bao Desmond P.Barber Ayse Bat Varvara Batozskaya Subash Chandra Behera Alexander Belyaev Michele Bertucci Xiao-Jun Bi Yuanjie Bi Tianjian Bian Fabrizio Bianchi Thomas Biekotter Michela Biglietti Shalva Bilanishvili Deng Binglin Denis Bodrov Anton Bogomyagkov Serge Bondarenko Stewart Boogert Maarten Boonekamp Marcello Borri Angelo Bosotti Vincent Boudry Mohammed Boukidi Igor Boyko Ivanka Bozovic Giuseppe Bozzi Jean-Claude Brient Anastasiia Budzinskaya Masroor Bukhari Vladimir Bytev Giacomo Cacciapaglia Hua Cai Wenyong Cai Wujun Cai Yijian Cai Yizhou Cai Yuchen Cai Haiying Cai Huacheng Cai Lorenzo Calibbi Junsong Cang guofu Cao Jianshe Cao Antoine Chance Xuejun Chang Yue Chang Zhe Chang Xinyuan Chang Wei Chao Auttakit Chatrabhuti Yimin Che Yuzhi Che Bin chen Danping chen Fuqing chen Fusan chen Gang chen guoming chen Hua-Xing chen Huirun chen Jinhui chen Ji-Yuan chen Kai chen Mali chen Mingjun chen Mingshui chen Ning chen Shanhong chen Shanzhen chen Shao-Long chen Shaomin chen Shiqiang chen Tianlu chen Wei chen Xiang chen Xiaoyu chen Xin chen Xun chen Xurong chen Ye chen ying chen Yukai chen Zelin chen Zilin chen Gang chen Boping chen Chunhui chen Hok Chuen cheng Huajie cheng Shan cheng Tongguang cheng Yunlong Chi Pietro Chimenti Wen Han Chiu Guk Cho Ming-Chung Chu Xiaotong Chu Ziliang Chu Guglielmo Coloretti Andreas Crivellin Hanhua Cui Xiaohao Cui Zhaoyuan Cui Brunella D'Anzi Ling-Yun Dai Xinchen Dai Xuwen Dai Antonio De Maria Nicola De Filippis Christophe De La Taille Francesca De Mori Chiara De Sio Elisa Del Core Shuangxue Deng Wei-Tian Deng Zhi Deng Ziyan Deng Bhupal Dev Tang Dewen Biagio Di Micco Ran Ding Siqin Dingl Yadong Ding Haiyi Dong Jianin AGH university.of Science and Technology Faculty of Physics and Applied Computer ScienceKrakow Anhui university HefeiAnhui Applied Physics Department Federal Urdu University of ArtsScience and TechnologyIslamabad Banaras Hindu university Institute of ScienceVaranasi Bandirma Onyedi Eylul university Bandirma Beihang university Beijing Beijing Computational Science Research Center Beijing Beijing Conveyi LTD Beijing Beijing Glass Research Institute Co. LtdBeijing Beijing Institute of Technology Beijing Beijing Normal university Beijing Brown university ProvidenceRI Budker Institute of Nuclear Physics Novosibirsk Cadi Ayyad university Laboratory of Fundamental and Applied PhysicsPolydisciplinary FacultyMarrakech Cairo university Giza Center for Theory and Computation National Tsing Hua UniversityHsinchu Central china Normal university WuhanHubei Central South university ChangshaHunan Centro de Fisica Teorica de Particulas Universidade Tecnica de LisboaLisboa chengdu KaitengSifang Digital Radio&TV Equipment Co. LtdChengduSichuan china academy of engineering physics MianyangSichuan china building materials academy Beijing china Center of Advanced Science and Technology Beijing china Institute of Atomic Energy Beijing china Jiliang university HangzhouZhejiang china Nuclear Instrument CO. LTDBeijing china university.of Geosciences Beijing china university.of Geosciences WuhanHubei china university.of Mining and Technology XuzhouJiangsu china West Normal university NanchongSichuan Chongqing university Department of PhysicsChongqing Chulalongkorn university Bangkok City university.of Hong Kong Department of PhysicsHong Kong Cockcroft Institute Daresbury Cornell university IthacaNY CPPM(AMU/IPhU&CNRS/INP) Marseille Dalian Minzu university DalianLiaoning Dalian university.of Technology Department of PhysicsDalian Deutsches Elektronen-Synchrotron DESY Hamburg Dzhelepov Laboratory of Nuclear Problems of Joint Institute for Nuclear Research(DLNP JINR) Dubna East china university.Of Science And Technol

The Circular Electron Positron Collider(CEPC)is a large scientific project initiated and hosted by china,fostered through extensive collaboration with international *** complex comprises four accelerators:a 30 GeV Linac,a 1.1 GeV Damping Ring,a Booster capable of achieving energies up to 180 GeV,and a Collider operating at varying energy modes(Z,W,H,and tt).The Linac and Damping Ring are situated on the surface,while the subterranean Booster and Collider are housed in a 100 km circumference underground tunnel,strategically accommodating future expansion with provisions for a potential Super Proton Proton Collider(SPPC).The CEPC primarily serves as a Higgs *** its baseline design with synchrotron radiation(SR)power of 30 MW per beam,it can achieve a luminosity of 5×10^(34)cm^(-2)s^(-1)per interaction point(IP),resulting in an integrated luminosity of 13 ab^(-1)for two IPs over a decade,producing 2.6 million Higgs *** the SR power to 50 MW per beam expands the CEPC's capability to generate 4.3 million Higgs bosons,facilitating precise measurements of Higgs coupling at sub-percent levels,exceeding the precision expected from the HL-LHC by an order of *** Technical Design Report(TDR)follows the Preliminary Conceptual Design Report(Pre-CDR,2015)and the Conceptual Design Report(CDR,2018),comprehensively detailing the machine's layout,performance metrics,physical design and analysis,technical systems design,R&D and prototyping efforts,and associated civil engineering ***,it includes a cost estimate and a preliminary construction timeline,establishing a framework for forthcoming engineering design phase and site selection *** is anticipated to begin around 2027-2028,pending government approval,with an estimated duration of 8 *** commencement of experiments and data collection could potentially be initiated in the mid-2030s.

关键词： initiated exceeding precise

Stacking monolayers at will:A scalable device optimization strategy for two-dimensional semiconductors

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Nano Research 2022年第7期15卷 6620-6627页

作者： Xiaojiao guo Honglei chen Jihong Bian Fuyou Liao Jingyi Ma Simeng Zhang Xinzhi Zhang Junqiang zhu chen Luo Zijian Zhang Lingyi Zong yin Xia Chuming Sheng Zihan Xu Saifei Gou Xinyu Wang Peng Gong Liwei Liu Xixi Jiang Zhenghua An Chunxiao Cong Zhijun Qiu Xing Wu Peng Zhou Xinyu chen Ling Tong Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan UniversityShanghai 200433China The Hong Kong Polytechnic university.Shenzhen Research Institute Shenzhen 518057China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of MicroFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Shanghai Key Laboratory of Multidimensional information Processing Department of electronic Engineering East China Normal UniversityShanghai 200241China Shenzhen Six Carbon Technology Shenzhen 518055China Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China

In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral ***,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML *** this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at *** optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer *** stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

关键词： two-dimensional semiconductor field-effect transistors chemical vapor deposition(CVD)synthesis interlayer coupling vacuum transfer method dual-gate transistor